STD93003中文资料

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STD93003HIGH VOLTAGE FAST-SWITCHINGPNP POWER TRANSISTOR

sREVERSE PINS OUT Vs STANDARD IPAK(TO-251) / DPAK (TO-252) PACKAGES

sMEDIUM VOLTAGE CAPABILITY

sLOW SPREAD OF DYNAMIC PARAMETERS

sMINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION

sVERY HIGH SWITCHING SPEED

sSURFACE-MOUNTING DPAK (TO-252)POWER PACKAGE IN TAPE & REEL (Suffix"T4")

sTHROUGH-HOLE IPAK (TO-251) POWERPACKAGE IN TUBE (Suffix "-1")

APPLICATIONS: sELECTRONIC BALLASTS FORFLUORESCENT LIGHTING

DESCRIPTION The device is manufactured using high voltageMulti-Epitaxial Planar technology for highswitching speeds and medium voltage capability.It uses a Cellular Emitter structure with planaredge termination to enhance switching speedswhile maintaining the wide RBSOA.The STD93003 is expressly designed for a newsolution to be used in compact fluorescent lamps,where it is coupled with the STD83003, itscomplementary NPN transistor.

®INTERNAL SCHEMATIC DIAGRAMOctober 2002 ABSOLUTE MAXIMUM RATINGSSymbolParameterValueUnitVCESCollector-Emitter Voltage (VBE = 0)-500VVCEOCollector-Emitter Voltage (IB = 0)-400VVEBOEmitter-Base Voltage(IC = 0, IB = -0.75 A, tp < 10µs, Tj < 150oC)V(BR)EBOV

ICCollector Current-1.5A

ICMCollector Peak Current (tp < 5 ms)-3AIBBase Current-0.75AIBMBase Peak Current (tp < 5 ms)-1.5APtotTotal Dissipation at Tc = 25 oC20WTstgStorage Temperature-65 to 150oCTjMax. Operating Junction Temperature150oC

321IPAK TO-251(Suffix "-1")13DPAK TO-252(Suffix "T4")

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元器件交易网www.cecb2b.comTHERMAL DATARthj-caseRthj-ambThermal Resistance Junction-case MaxThermal Resistance Junction-ambient Max6.25100oC/WoC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)SymbolParameterTest ConditionsMin.Typ.Max.UnitICESCollector Cut-offCurrent (VBE = 0)VCE = -500V

VCE = -500V Tj = 125oC-1-5mAmA

V(BR)EBOEmitter BaseBreakdown Voltage(IC = 0)IE = -10 mA-5-10V

VCEO(sus)∗Collector-EmitterSustaining Voltage(IB = 0)IC = -10 mAL = 25 mH-400V

VCE(sat)∗Collector-EmitterSaturation VoltageIC = -0.5 A IB = -0.1 AIC = -0.35 A IB = -50 mA-0.5-0.5VV

VBE(sat)∗Base-EmitterSaturation VoltageIC = -0.5 A IB = -0.1 A-1V

hFE∗DC Current GainIC = -10 mA VCE = -5 V

IC = -0.35 A VCE = -5 V

IC = -1 A VCE = -5 V

101642532

trtstfRESISTIVE LOADRise TimeStorage TimeFall TimeIC = -0.35 A VCC = 125 V IB1 = -70 mA IB2 = 70 mATp ≥ 25 µs (see Figure 2)1.5902.20.12.9ns

µsµs

tstfINDUCTIVE LOADStorage TimeFall TimeIC = -0.5 A IB1 = -0.1 AVBE(off) = 5 V L = 10 mH

Vclamp = 300 V (see Figure 1)40040nsns

EsbAvalanche EnergyL = 4 mH C = 1.8 nFIBR ≤ 2.5 A 25oC < TC < 125oC12mJ

∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %.

STD93003

2/8元器件交易网www.cecb2b.comSafe Operating AreaDC Current Gain Collector Emitter Saturation VoltageDerating Curve

DC Current Gain Base Emitter Saturation Voltage

STD93003

3/8元器件交易网www.cecb2b.comResistive Fall TimeResistive Storage Time

Inductive Fall TimeInductive Storage TimeReverse Biased SOA

STD93003

4/8元器件交易网www.cecb2b.comFigure 1: Inductive Load Switching Test Circuit.

Figure 2: Resistive Load Switching Test Circuit.1) Fast electronic switch2) Non-inductive Resistor3) Fast recovery rectifier

1) Fast electronic switch2) Non-inductive Resistor

STD93003

5/8元器件交易网www.cecb2b.comDIM.mminchMIN.TYP.MAX.MIN.TYP.MAX.A2.202.400.0870.094A10.901.100.0350.043A30.701.300.0280.051B0.640.900.0250.035B25.205.400.2040.213B30.850.033B50.300.012B60.950.037C0.450.600.0180.024C20.480.600.0190.024D6.006.200.2370.244E6.406.600.2520.260G4.404.600.1730.181H15.9016.300.6260.642L9.009.400.3540.370L10.801.200.0310.047L20.801.000.0310.039V110o10o

P032NR/E

TO-251 (IPAK) MECHANICAL DATASTD93003

6/8元器件交易网www.cecb2b.comDIM.mminchMIN.TYP.MAX.MIN.TYP.MAX.A2.202.400.0870.094A10.901.100.0350.043A20.030.230.0010.009B0.640.900.0250.035B25.205.400.2040.213C0.450.600.0180.024C20.480.600.0190.024D6.006.200.2360.244E6.406.600.2520.260G4.404.600.1730.181H9.3510.100.3680.398L20.80.031L40.601.000.0240.039V20o8o0o0o

P032P_B

TO-252 (DPAK) MECHANICAL DATASTD93003

7/8元器件交易网www.cecb2b.com