Stationary and dynamical properties of information entropies in nonextensive systems
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期刊全称期刊简称Acm Computing Surveys ACM COMPUT SURV Acm Journal On Emerging Technologies in Computing Systems ACM J EMERG TECH COM Acm Sigcomm Computer Communication Review ACM SIGCOMM COMP COMAcm Sigplan Notices ACM SIGPLAN NOTICES Acm Transactions On Algorithms ACM T ALGORITHMS Acm Transactions On Applied Perception ACM T APPL PERCEPT Acm Transactions On Architecture and Code Optimization ACM T ARCHIT CODE OPAcm Transactions On Autonomous and Adaptive Systems ACM T AUTON ADAP SYS Acm Transactions On Computational Logic ACM T COMPUT LOGAcm Transactions On Computer Systems ACM T COMPUT SYST Acm Transactions On Computer-Human Interaction ACM T COMPUT-HUM INT Acm Transactions On Database Systems ACM T DATABASE SYST Acm Transactions On Design Automation of Electronic Systems ACM T DES AUTOMAT EL Acm Transactions On Embedded Computing Systems ACM T EMBED COMPUT S Acm Transactions On Graphics ACM T GRAPHIC Acm Transactions On Information and System Security ACM T INFORM SYST SE Acm Transactions 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SYSTInternational Journal of Data Mining and Bioinformatics INT J DATA MIN BIOINInternational Journal of Data Warehousing and Mining INT J DATA WAREHOUSInternational Journal of Distributed Sensor Networks INT J DISTRIB SENS NInternational Journal of Foundations of Computer Science INT J FOUND COMPUT S International Journal of General Systems INT J GEN SYST International Journal of High Performance Computing Applications INT J HIGH PERFORM C International Journal of Information Security INT J INF SECUR International Journal of Information Technology & Decision Making INT J INF TECH DECIS International Journal of Machine Learning and Cybernetics INT J MACH LEARN CYB International Journal of Network Management INT J NETW MANAG International Journal of Neural Systems INT J NEURAL SYST International Journal of Parallel Programming INT J PARALLEL PROG International Journal of Pattern Recognition and Artificial Intelligence INT J PATTERN RECOGN International Journal of Satellite 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Two-Dimensional Gas of Massless Dirac Fermions in Graphene K.S. Novoselov1, A.K. Geim1, S.V. Morozov2, D. Jiang1, M.I. Katsnelson3, I.V. Grigorieva1, S.V. Dubonos2, A.A. Firsov21Manchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester, M13 9PL, UK2Institute for Microelectronics Technology, 142432, Chernogolovka, Russia3Institute for Molecules and Materials, Radboud University of Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, the NetherlandsElectronic properties of materials are commonly described by quasiparticles that behave as nonrelativistic electrons with a finite mass and obey the Schrödinger equation. Here we report a condensed matter system where electron transport is essentially governed by the Dirac equation and charge carriers mimic relativistic particles with zero mass and an effective “speed of light” c∗ ≈106m/s. Our studies of graphene – a single atomic layer of carbon – have revealed a variety of unusual phenomena characteristic of two-dimensional (2D) Dirac fermions. In particular, we have observed that a) the integer quantum Hall effect in graphene is anomalous in that it occurs at halfinteger filling factors; b) graphene’s conductivity never falls below a minimum value corresponding to the conductance quantum e2/h, even when carrier concentrations tend to zero; c) the cyclotron mass mc of massless carriers with energy E in graphene is described by equation E =mcc∗2; and d) Shubnikov-de Haas oscillations in graphene exhibit a phase shift of π due to Berry’s phase.Graphene is a monolayer of carbon atoms packed into a dense honeycomb crystal structure that can be viewed as either an individual atomic plane extracted from graphite or unrolled single-wall carbon nanotubes or as a giant flat fullerene molecule. This material was not studied experimentally before and, until recently [1,2], presumed not to exist. To obtain graphene samples, we used the original procedures described in [1], which involve micromechanical cleavage of graphite followed by identification and selection of monolayers using a combination of optical, scanning-electron and atomic-force microscopies. The selected graphene films were further processed into multi-terminal devices such as the one shown in Fig. 1, following standard microfabrication procedures [2]. Despite being only one atom thick and unprotected from the environment, our graphene devices remain stable under ambient conditions and exhibit high mobility of charge carriers. Below we focus on the physics of “ideal” (single-layer) graphene which has a different electronic structure and exhibits properties qualitatively different from those characteristic of either ultra-thin graphite films (which are semimetals and whose material properties were studied recently [2-5]) or even of our other devices consisting of just two layers of graphene (see further). Figure 1 shows the electric field effect [2-4] in graphene. Its conductivity σ increases linearly with increasing gate voltage Vg for both polarities and the Hall effect changes its sign at Vg ≈0. This behaviour shows that substantial concentrations of electrons (holes) are induced by positive (negative) gate voltages. Away from the transition region Vg ≈0, Hall coefficient RH = 1/ne varies as 1/Vg where n is the concentration of electrons or holes and e the electron charge. The linear dependence 1/RH ∝Vg yields n =α·Vg with α ≈7.3·1010cm-2/V, in agreement with the theoretical estimate n/Vg ≈7.2·1010cm-2/V for the surface charge density induced by the field effect (see Fig. 1’s caption). The agreement indicates that all the induced carriers are mobile and there are no trapped charges in graphene. From the linear dependence σ(Vg) we found carrier mobilities µ =σ/ne, whichreached up to 5,000 cm2/Vs for both electrons and holes, were independent of temperature T between 10 and 100K and probably still limited by defects in parent graphite. To characterise graphene further, we studied Shubnikov-de Haas oscillations (SdHO). Figure 2 shows examples of these oscillations for different magnetic fields B, gate voltages and temperatures. Unlike ultra-thin graphite [2], graphene exhibits only one set of SdHO for both electrons and holes. By using standard fan diagrams [2,3], we have determined the fundamental SdHO frequency BF for various Vg. The resulting dependence of BF as a function of n is plotted in Fig. 3a. Both carriers exhibit the same linear dependence BF = β·n with β ≈1.04·10-15 T·m2 (±2%). Theoretically, for any 2D system β is defined only by its degeneracy f so that BF =φ0n/f, where φ0 =4.14·10-15 T·m2 is the flux quantum. Comparison with the experiment yields f =4, in agreement with the double-spin and double-valley degeneracy expected for graphene [6,7] (cf. caption of Fig. 2). Note however an anomalous feature of SdHO in graphene, which is their phase. In contrast to conventional metals, graphene’s longitudinal resistance ρxx(B) exhibits maxima rather than minima at integer values of the Landau filling factor ν (Fig. 2a). Fig. 3b emphasizes this fact by comparing the phase of SdHO in graphene with that in a thin graphite film [2]. The origin of the “odd” phase is explained below. Another unusual feature of 2D transport in graphene clearly reveals itself in the T-dependence of SdHO (Fig. 2b). Indeed, with increasing T the oscillations at high Vg (high n) decay more rapidly. One can see that the last oscillation (Vg ≈100V) becomes practically invisible already at 80K whereas the first one (Vg <10V) clearly survives at 140K and, in fact, remains notable even at room temperature. To quantify this behaviour we measured the T-dependence of SdHO’s amplitude at various gate voltages and magnetic fields. The results could be fitted accurately (Fig. 3c) by the standard expression T/sinh(2π2kBTmc/heB), which yielded mc varying between ≈ 0.02 and 0.07m0 (m0 is the free electron mass). Changes in mc are well described by a square-root dependence mc ∝n1/2 (Fig. 3d). To explain the observed behaviour of mc, we refer to the semiclassical expressions BF = (h/2πe)S(E) and mc =(h2/2π)∂S(E)/∂E where S(E) =πk2 is the area in k-space of the orbits at the Fermi energy E(k) [8]. Combining these expressions with the experimentally-found dependences mc ∝n1/2 and BF =(h/4e)n it is straightforward to show that S must be proportional to E2 which yields E ∝k. Hence, the data in Fig. 3 unambiguously prove the linear dispersion E =hkc∗ for both electrons and holes with a common origin at E =0 [6,7]. Furthermore, the above equations also imply mc =E/c∗2 =(h2n/4πc∗2)1/2 and the best fit to our data yields c∗ ≈1⋅106 m/s, in agreement with band structure calculations [6,7]. The employed semiclassical model is fully justified by a recent theory for graphene [9], which shows that SdHO’s amplitude can indeed be described by the above expression T/sinh(2π2kBTmc/heB) with mc =E/c∗2. Note that, even though the linear spectrum of fermions in graphene (Fig. 3e) implies zero rest mass, their cyclotron mass is not zero. The unusual response of massless fermions to magnetic field is highlighted further by their behaviour in the high-field limit where SdHO evolve into the quantum Hall effect (QHE). Figure 4 shows Hall conductivity σxy of graphene plotted as a function of electron and hole concentrations in a constant field B. Pronounced QHE plateaux are clearly seen but, surprisingly, they do not occur in the expected sequence σxy =(4e2/h)N where N is integer. On the contrary, the plateaux correspond to half-integer ν so that the first plateau occurs at 2e2/h and the sequence is (4e2/h)(N + ½). Note that the transition from the lowest hole (ν =–½) to lowest electron (ν =+½) Landau level (LL) in graphene requires the same number of carriers (∆n =4B/φ0 ≈1.2·1012cm-2) as the transition between other nearest levels (cf. distances between minima in ρxx). This results in a ladder of equidistant steps in σxy which are not interrupted when passing through zero. To emphasize this highly unusual behaviour, Fig. 4 also shows σxy for a graphite film consisting of only two graphene layers where the sequence of plateaux returns to normal and the first plateau is at 4e2/h, as in the conventional QHE. We attribute this qualitative transition between graphene and its two-layer counterpart to the fact that fermions in the latter exhibit a finite mass near n ≈0 (as found experimentally; to be published elsewhere) and can no longer be described as massless Dirac particles. 2The half-integer QHE in graphene has recently been suggested by two theory groups [10,11], stimulated by our work on thin graphite films [2] but unaware of the present experiment. The effect is single-particle and intimately related to subtle properties of massless Dirac fermions, in particular, to the existence of both electron- and hole-like Landau states at exactly zero energy [912]. The latter can be viewed as a direct consequence of the Atiyah-Singer index theorem that plays an important role in quantum field theory and the theory of superstrings [13,14]. For the case of 2D massless Dirac fermions, the theorem guarantees the existence of Landau states at E=0 by relating the difference in the number of such states with opposite chiralities to the total flux through the system (note that magnetic field can also be inhomogeneous). To explain the half-integer QHE qualitatively, we invoke the formal expression [9-12] for the energy of massless relativistic fermions in quantized fields, EN =[2ehc∗2B(N +½ ±½)]1/2. In QED, sign ± describes two spins whereas in the case of graphene it refers to “pseudospins”. The latter have nothing to do with the real spin but are “built in” the Dirac-like spectrum of graphene, and their origin can be traced to the presence of two carbon sublattices. The above formula shows that the lowest LL (N =0) appears at E =0 (in agreement with the index theorem) and accommodates fermions with only one (minus) projection of the pseudospin. All other levels N ≥1 are occupied by fermions with both (±) pseudospins. This implies that for N =0 the degeneracy is half of that for any other N. Alternatively, one can say that all LL have the same “compound” degeneracy but zeroenergy LL is shared equally by electrons and holes. As a result the first Hall plateau occurs at half the normal filling and, oddly, both ν = –½ and +½ correspond to the same LL (N =0). All other levels have normal degeneracy 4B/φ0 and, therefore, remain shifted by the same ½ from the standard sequence. This explains the QHE at ν =N + ½ and, at the same time, the “odd” phase of SdHO (minima in ρxx correspond to plateaux in ρxy and, hence, occur at half-integer ν; see Figs. 2&3), in agreement with theory [9-12]. Note however that from another perspective the phase shift can be viewed as the direct manifestation of Berry’s phase acquired by Dirac fermions moving in magnetic field [15,16]. Finally, we return to zero-field behaviour and discuss another feature related to graphene’s relativistic-like spectrum. The spectrum implies vanishing concentrations of both carriers near the Dirac point E =0 (Fig. 3e), which suggests that low-T resistivity of the zero-gap semiconductor should diverge at Vg ≈0. However, neither of our devices showed such behaviour. On the contrary, in the transition region between holes and electrons graphene’s conductivity never falls below a well-defined value, practically independent of T between 4 and 100K. Fig. 1c plots values of the maximum resistivity ρmax(B =0) found in 15 different devices, which within an experimental error of ≈15% all exhibit ρmax ≈6.5kΩ, independent of their mobility that varies by a factor of 10. Given the quadruple degeneracy f, it is obvious to associate ρmax with h/fe2 =6.45kΩ where h/e2 is the resistance quantum. We emphasize that it is the resistivity (or conductivity) rather than resistance (or conductance), which is quantized in graphene (i.e., resistance R measured experimentally was not quantized but scaled in the usual manner as R =ρL/w with changing length L and width w of our devices). Thus, the effect is completely different from the conductance quantization observed previously in quantum transport experiments. However surprising, the minimum conductivity is an intrinsic property of electronic systems described by the Dirac equation [17-20]. It is due to the fact that, in the presence of disorder, localization effects in such systems are strongly suppressed and emerge only at exponentially large length scales. Assuming the absence of localization, the observed minimum conductivity can be explained qualitatively by invoking Mott’s argument [21] that mean-free-path l of charge carriers in a metal can never be shorter that their wavelength λF. Then, σ =neµ can be re-written as σ = (e2/h)kFl and, hence, σ cannot be smaller than ≈e2/h per each type of carriers. This argument is known to have failed for 2D systems with a parabolic spectrum where disorder leads to localization and eventually to insulating behaviour [17,18]. For the case of 2D Dirac fermions, no localization is expected [17-20] and, accordingly, Mott’s argument can be used. Although there is a broad theoretical consensus [18-23,10,11] that a 2D gas of Dirac fermions should exhibit a minimum 3conductivity of about e2/h, this quantization was not expected to be accurate and most theories suggest a value of ≈e2/πh, in disagreement with the experiment. 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Morita, Y. & Hatsugai, Y. Phys. Rev. Lett. 79, 3728 (1997). 23. Nersesyan, A.A., Tsvelik, A.M. & Wenger, F. Phys. Rev. Lett. 72, 2628 (1997). 24. Rose, M.E. Relativistic Electron Theory (John Wiley, New York, 1961). 25. Berestetskii, V.B., Lifshitz, E.M. & Pitaevskii, L.P. Relativistic Quantum Theory (Pergamon Press, Oxford, 1971). 26. Lai, D. Rev. Mod. Phys. 73, 629 (2001). 27. Fradkin, E. Field Theories of Condensed Matter Systems (Westview Press, Oxford, 1997). 28. Volovik, G.E. The Universe in a Helium Droplet (Clarendon Press, Oxford, 2003).Acknowledgements This research was supported by the EPSRC (UK). We are most grateful to L. Glazman, V. Falko, S. Sharapov and A. Castro Netto for helpful discussions. K.S.N. was supported by Leverhulme Trust. S.V.M., S.V.D. and A.A.F. acknowledge support from the Russian Academy of Science and INTAS.43µ (m2/Vs)0.8c4P0.4 22 σ (1/kΩ)10K0 0 1/RH(T/kΩ) 1 2ρmax (h/4e2)1-5010 Vg (V) 50 -10ab 0 -100-500 Vg (V)50100Figure 1. Electric field effect in graphene. a, Scanning electron microscope image of one of our experimental devices (width of the central wire is 0.2µm). False colours are chosen to match real colours as seen in an optical microscope for larger areas of the same materials. Changes in graphene’s conductivity σ (main panel) and Hall coefficient RH (b) as a function of gate voltage Vg. σ and RH were measured in magnetic fields B =0 and 2T, respectively. The induced carrier concentrations n are described by [2] n/Vg =ε0ε/te where ε0 and ε are permittivities of free space and SiO2, respectively, and t ≈300 nm is the thickness of SiO2 on top of the Si wafer used as a substrate. RH = 1/ne is inverted to emphasize the linear dependence n ∝Vg. 1/RH diverges at small n because the Hall effect changes its sign around Vg =0 indicating a transition between electrons and holes. Note that the transition region (RH ≈ 0) was often shifted from zero Vg due to chemical doping [2] but annealing of our devices in vacuum normally allowed us to eliminate the shift. The extrapolation of the linear slopes σ(Vg) for electrons and holes results in their intersection at a value of σ indistinguishable from zero. c, Maximum values of resistivity ρ =1/σ (circles) exhibited by devices with different mobilites µ (left y-axis). The histogram (orange background) shows the number P of devices exhibiting ρmax within 10% intervals around the average value of ≈h/4e2. Several of the devices shown were made from 2 or 3 layers of graphene indicating that the quantized minimum conductivity is a robust effect and does not require “ideal” graphene.ρxx (kΩ)0.60 aVg = -60V4B (T)810K12∆σxx (1/kΩ)0.4 1ν=4 140K 80K B =12T0 b 0 25 50 Vg (V) 7520K100Figure 2. Quantum oscillations in graphene. SdHO at constant gate voltage Vg as a function of magnetic field B (a) and at constant B as a function of Vg (b). Because µ does not change much with Vg, the constant-B measurements (at a constant ωcτ =µB) were found more informative. Panel b illustrates that SdHO in graphene are more sensitive to T at high carrier concentrations. The ∆σxx-curves were obtained by subtracting a smooth (nearly linear) increase in σ with increasing Vg and are shifted for clarity. SdHO periodicity ∆Vg in a constant B is determined by the density of states at each Landau level (α∆Vg = fB/φ0) which for the observed periodicity of ≈15.8V at B =12T yields a quadruple degeneracy. Arrows in a indicate integer ν (e.g., ν =4 corresponds to 10.9T) as found from SdHO frequency BF ≈43.5T. Note the absence of any significant contribution of universal conductance fluctuations (see also Fig. 1) and weak localization magnetoresistance, which are normally intrinsic for 2D materials with so high resistivity.75 BF (T) 500.2 0.11/B (1/T)b5 10 N 1/2025 a 0 0.061dmc /m00.04∆0.02 0c0 0 T (K) 150n =0e-6-3036Figure 3. Dirac fermions of graphene. a, Dependence of BF on carrier concentration n (positive n correspond to electrons; negative to holes). b, Examples of fan diagrams used in our analysis [2] to find BF. N is the number associated with different minima of oscillations. Lower and upper curves are for graphene (sample of Fig. 2a) and a 5-nm-thick film of graphite with a similar value of BF, respectively. Note that the curves extrapolate to different origins; namely, to N = ½ and 0. In graphene, curves for all n extrapolate to N = ½ (cf. [2]). This indicates a phase shift of π with respect to the conventional Landau quantization in metals. The shift is due to Berry’s phase [9,15]. c, Examples of the behaviour of SdHO amplitude ∆ (symbols) as a function of T for mc ≈0.069 and 0.023m0; solid curves are best fits. d, Cyclotron mass mc of electrons and holes as a function of their concentration. Symbols are experimental data, solid curves the best fit to theory. e, Electronic spectrum of graphene, as inferred experimentally and in agreement with theory. This is the spectrum of a zero-gap 2D semiconductor that describes massless Dirac fermions with c∗ 300 times less than the speed of light.n (1012 cm-2)σxy (4e2/h)4 3 2 -2 1 -1 -2 -3 2 44Kn7/ 5/ 3/ 1/2 2 2 210 ρxx (kΩ)-4σxy (4e2/h)0-1/2 -3/2 -5/2514T0-7/2 -4 -2 0 2 4 n (1012 cm-2)Figure 4. Quantum Hall effect for massless Dirac fermions. Hall conductivity σxy and longitudinal resistivity ρxx of graphene as a function of their concentration at B =14T. σxy =(4e2/h)ν is calculated from the measured dependences of ρxy(Vg) and ρxx(Vg) as σxy = ρxy/(ρxy + ρxx)2. The behaviour of 1/ρxy is similar but exhibits a discontinuity at Vg ≈0, which is avoided by plotting σxy. Inset: σxy in “two-layer graphene” where the quantization sequence is normal and occurs at integer ν. The latter shows that the half-integer QHE is exclusive to “ideal” graphene.。