RM50TC-24中文资料

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󰃧 SBD Type : FCFCL30L30L30A0A0A0151515 OUTLINE DRAWING Maximum Ratings Approx Net Weight: 1.75g Rating SymbolFCL30A015 UnitRepetitive Peak Reverse Voltage VRRM 15 V Average Rectified Output Current IO 30 Tc=78°C 50 Hz Full Sine Wave Resistive Load A RMS Forward Current IF(RMS)33.3 A Surge Forward Current IFSM 250 50Hz Full Sine Wave ,1cycle Non-repetitive A Operating JunctionTemperature Range Tjw -40 to +125 °C Storage Temperature Range Tstg -40 to +125 °C Mounting torque Ftor recommended torque = 0.5 N•m Electrical • Thermal Characteristics Characteristics SymbolConditions Min. Typ.Max.UnitPeak Reverse Current IRM Tj= 25°C, VRM= VRRM per arm - - 15 mA Peak Forward Voltage VFM Tj= 25°C, IFM= 15 A per arm - - 0.42V Rth(j-c)Junction to Case - - 1.5 °C /WThermal Resistance Rth(c-f)Cace to Fin - - 1.5 °C /W FEATURESFEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Extremely Low Forward Voltage Drop *Oring Diode *High Surge Capability 󰃧󰀁FCL_A_ OUTLINE DRAWING (Dimensions in mm)

1Rectifier Device DataSWITCHMODE™Power Rectifiers

ing the Schottky Barrier principle with a platinum barrier metal. Thesestate–of–the–art devices have the following features:•Guardring for Stress Protection•Low Forward Voltage•150°C Operating Junction Temperature•Guaranteed Reverse Avalanche•Epoxy Meets UL94, VO at 1/8″Mechanical Characteristics:•Case: Epoxy, Molded•Weight: 1.9 grams (approximately)•Finish: All External Surfaces Corrosion Resistant and Terminal Leads areReadily Solderable•Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds•Shipped 50 units per plastic tube•Marking: B2035, B2045

MAXIMUM RATINGSRatingSymbolMBR2035CTMBR2045CTUnitPeak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking VoltageVRRMVRWMVR3545Volts

Average Rectified Forward Current (Rated VR)TC = 135°CIF(AV)2020AmpsPeak Repetitive Forward Current Per Diode Leg(Rated VR, Square Wave, 20 kHz) TC = 135°CIFRM2020AmpsNonrepetitive Peak Surge Current(Surge applied at rated load conditions halfwave, single phase, 60 Hz)IFSM150150AmpsPeak Repetitive Reverse Surge Current(2.0 µs, 1.0 kHz) See Figure 11IRRM1.01.0AmpOperating Junction TemperatureTJ*65 to +150*65 to +150°CStorage TemperatureTstg*65 to +175*65 to +175°CVoltage Rate of Change (Rated VR)dv/dt10001000V/µsTHERMAL CHARACTERISTICSMaximum Thermal Resistance, Junction to CaseRθJC2.02.0°C/WELECTRICAL CHARACTERISTICSMaximum Instantaneous Forward Voltage (1)(iF = 10 Amps, TC = 125°C)(iF = 20 Amps, TC = 125°C)(iF = 20 Amps, TC = 25°C)vF0.570.720.840.570.720.84Volts

红芪多糖对糖尿病小鼠肾脏组织α-SMA表达及肾小管间质损伤的影响研究

毛明锋;雷文晖;周丽美;金烈

【摘 要】目的 探讨红芪多糖(HPS)对糖尿病小鼠肾脏组织α-SMA表达及对肾小管间质损伤的影响.方法 将32只2型糖尿病db/db小鼠按随机数字表法分为糖尿病模型组、HPS高剂量组、HPS中剂量组、HPS低剂量组,每组各8只;另择8只db/m小鼠作为正常对照组.HPS高、中、低剂量组小鼠分别给予HPS 400、200、100mg/(kg·d)灌胃干预,正常对照组、糖尿病模型组小鼠以等量的0.9％氯化钠溶液灌胃.各组小鼠均连续灌胃8周后处死,取肾脏组织作病理检查,比较各组肾脏组织肾小管间质损伤程度;采用免疫组化法检测肾脏组织α-SMA表达强度,Western

blot法检测α-SMA表达水平,并进行比较.结果 5组小鼠肾脏组织肾小管间质损伤程度比较差异有统计学意义(P<0.05),糖尿病模型组小鼠肾脏组织肾小管间质损伤程度最重,除正常对照组外,HPS高剂量组小鼠肾脏组织肾小管间质损伤程度最轻.5组小鼠肾脏组织α-SMA表达阳性率比较差异有统计学意义(P<0.05),HPS高剂量组明显低于糖尿病模型组(P<0.05).5组小鼠肾脏组织α-SMA表达水平比较差异均有统计学差异(P<0.05),HPS高、中、低剂量组与糖尿病模型组均高于正常对照组(均P<0.05),HPS低剂量组小鼠肾脏组织α-SMA表达水平>HPS中剂量组>HPS高剂量组(均P<0.05).结论 HPS能够抑制2型糖尿病db/db小鼠肾脏组织α-SMA的表达,减轻肾小管间质损伤程度.

【期刊名称】《浙江医学》

【年(卷),期】2019(041)005 【总页数】4页(P424-427)

【关键词】红芪多糖;糖尿病肾病;α-SMA

【作 者】毛明锋;雷文晖;周丽美;金烈

【作者单位】323000 丽水市中心医院肾内科;323000 丽水市中心医院肾内科;323000 丽水市中心医院肾内科;323000 丽水市中心医院肾内科

REJ03G1677-0100 Rev.1.00 Jun 04,

2008

Page 1 of 6

CR12PM-12A

Thyristor

Medium Power Use

REJ03G1677-0100 Rev.1.00 Jun 04, 2008

Features

• IT (AV) : 12 A • VDRM : 600 V • IGT : 30 mA • Viso : 2000 V • Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0003AA-A(Package name: TO-220F )

2132

131. Cathode2. Anode3. Gate

Applications

Switching mode power supply, motor control, heater control, and other general purpose control applications

Maximum Ratings Voltage class Parameter Symbol 12 Unit

Repetitive peak reverse voltage VRRM 600 V Non-repetitive peak reverse voltage VRSM 720 V DC reverse voltage VR (DC) 480 V Repetitive peak off-state voltage VDRM 600 V DC off-state voltage VD (DC) 480 V 元器件交易网CR12PM-12A REJ03G1677-0100 Rev.1.00 Jun 04, 2008 Page 2 of 6 Parameter Symbol Ratings Unit Conditions RMS on-state current IT (RMS) 18.8 A Average on-state current IT (AV) 12 A Commercial frequency, sine half wave 180° conduction, Tc = 56°C Surge on-state current ITSM 330 A 50Hz sine half wave 1 full cycle, peak value, non-repetitive I2t for fusing I2t 544 A2s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Peak gate power dissipation PGM 5 W Average gate power dissipation PG (AV) 0.5 W Peak gate forward voltage VFGM 6 V Peak gate reverse voltage VRGM 10 V Peak gate forward current IFGM 2 A Junction temperature Tj – 40 to +125 °C Storage temperature Tstg – 40 to +125 °C Mass — 2.0 g Typical value Isolation voltage Viso 2000 V Ta = 25°C, AC 1 minute, each terminal to case Electrical Characteristics