W26NM50中文资料

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1/9February 2005STW26NM50N-CHANNEL 500V - 0.10Ω - 30A TO-247MDmesh™ MOSFET

Table 1: General Features

sTYPICAL RDS(on) = 0.10 Ω

sHIGH dv/dt AND AVALANCHE CAPABILITIESsIMPROVED ESD CAPABILITY

sLOW INPUT CAPACITANCE AND GATE CHARGE

DESCRIPTIONThe MDmesh™ is a new revolutionary MOSFETtechnology that associates the Multiple Drain pro-cess with the Company’s PowerMESH™ horizon-tal layout. The resulting product has anoutstanding low on-resistance, impressively highdv/dt and excellent avalanche characteristics. Theadoption of the Company’s proprietary strip tech-nique yields overall dynamic performance that issignificantly better than that of similar competi-tion’s products.

APPLICATIONSThe MDmesh™ family is very suitable for increas-ing power density of high voltage converters allow-ing system miniaturization and higher efficiencies.

Table 2: Order Codes

Figure 1: PackageFigure 2: Internal Schematic DiagramTYPEVDSSRDS(on)ID

STW26NM50500 V< 0.120 Ω30 A

TO-247

SALES TYPEMARKINGPACKAGEPACKAGINGSTW26NM50W26NM50TO-247TUBE

Rev. 9

元器件交易网www.cecb2b.comSTW26NM50

2/9Table 3: Absolute Maximum ratings

(󰀁) Pulse width limited by safe operating area (1) ISD ≤26A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

Table 4: Thermal Data

Table 5: Avalanche Characteristics

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)Table 6: Gate-Source Zener Diode

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’sESD capability, but also to make them safely absorb possible voltage transients that may occasionally beapplied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient andcost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid theusage of external components.

SymbolParameterValueUnitVDSDrain-source Voltage (VGS = 0)500V

VDGRDrain-gate Voltage (RGS = 20 kΩ)500V

VGSGate- source Voltage± 30V

IDDrain Current (continuous) at TC = 25°C30A

IDDrain Current (continuous) at TC = 100°C18.9A

IDM (󰀁)Drain Current (pulsed)120A

PTOTTotal Dissipation at TC = 25°C313W

Derating Factor2.5W/°CVESD(G-S)Gate source ESD(HBM-C=100pF, R=1.5KΩ)6000V

dv/dt (1)Peak Diode Recovery voltage slope15V/nsTjTstgOperating Junction TemperatureStorage Temperature-55 to 150°C

Rthj-caseThermal Resistance Junction-case Max0.4°C/WRthj-ambThermal Resistance Junction-ambient Max62.5°C/WTlMaximum Lead Temperature For Soldering Purpose300°C

SymbolParameterMax ValueUnitIARAvalanche Current, Repetitive or Not-Repetitive(pulse width limited by Tj max)13A

EASSingle Pulse Avalanche Energy(starting Tj = 25 °C, ID = IAR, VDD = 50 V)740mJ

SymbolParameterTest ConditionsMin.Typ.Max.UnitBVGSOGate-Source Breakdown VoltageIgss=± 1mA (Open Drain)30V

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STW26NM50Table 7: On /Off

Table 8: Dynamic

Table 9: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.(2) Pulse width limited by safe operating area.(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.

SymbolParameterTest ConditionsMin.Typ.Max.UnitV(BR)DSSDrain-source Breakdown VoltageID = 250 mA, VGS = 0500V

IDSSZero Gate Voltage Drain Current (VGS = 0)VDS = Max RatingVDS = Max Rating, TC = 125°C 10100µAµA

IGSSGate-body LeakageCurrent (VDS = 0)VGS = ± 20 V± 10µA

VGS(th)Gate Threshold VoltageVDS = VGS, ID = 250 µA345VRDS(onStatic Drain-source On ResistanceVGS = 10 V, ID = 13 A0.100.12Ω

SymbolParameterTest ConditionsMin.Typ.Max.Unitgfs (1)Forward TransconductanceVDS = 15 V , ID = 13 A20SCissCossCrssInput CapacitanceOutput CapacitanceReverse Transfer CapacitanceVDS = 25 V, f = 1 MHz, VGS = 0300070050

pFpFpF

COSS eq (3).Equivalent Output CapacitanceVGS = 0 V, VDS = 0 to 400 V300pF

td(on)trtd(off)tfTurn-on Delay Time Rise TimeTurn-off-Delay TimeFall TimeVDD = 250 V, ID = 13 A, RG = 4.7 Ω, VGS = 10 V(see Figure 15)28

151319

nsnsnsns

QgQgsQgdTotal Gate ChargeGate-Source ChargeGate-Drain ChargeVDD = 400 V, ID = 26 A,VGS = 10 V(see Figure 18)762036106nC

nCnC

SymbolParameterTest ConditionsMin.Typ.Max.UnitISDISDM (2)Source-drain CurrentSource-drain Current (pulsed)26104AA

VSD (1)Forward On VoltageISD = 26 A, VGS = 01.5V

trrQrrIRRMReverse Recovery TimeReverse Recovery ChargeReverse Recovery CurrentISD = 26 A, di/dt = 100 A/µs

VDD = 100V(see Figure 16)

4005.527.8nsµCA

trrQrrIRRMReverse Recovery TimeReverse Recovery ChargeReverse Recovery CurrentISD = 26 A, di/dt = 100 A/µs