W26NM50中文资料
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1/9February 2005STW26NM50N-CHANNEL 500V - 0.10Ω - 30A TO-247MDmesh™ MOSFET
Table 1: General Features
sTYPICAL RDS(on) = 0.10 Ω
sHIGH dv/dt AND AVALANCHE CAPABILITIESsIMPROVED ESD CAPABILITY
sLOW INPUT CAPACITANCE AND GATE CHARGE
DESCRIPTIONThe MDmesh™ is a new revolutionary MOSFETtechnology that associates the Multiple Drain pro-cess with the Company’s PowerMESH™ horizon-tal layout. The resulting product has anoutstanding low on-resistance, impressively highdv/dt and excellent avalanche characteristics. Theadoption of the Company’s proprietary strip tech-nique yields overall dynamic performance that issignificantly better than that of similar competi-tion’s products.
APPLICATIONSThe MDmesh™ family is very suitable for increas-ing power density of high voltage converters allow-ing system miniaturization and higher efficiencies.
Table 2: Order Codes
Figure 1: PackageFigure 2: Internal Schematic DiagramTYPEVDSSRDS(on)ID
STW26NM50500 V< 0.120 Ω30 A
TO-247
SALES TYPEMARKINGPACKAGEPACKAGINGSTW26NM50W26NM50TO-247TUBE
Rev. 9
元器件交易网www.cecb2b.comSTW26NM50
2/9Table 3: Absolute Maximum ratings
() Pulse width limited by safe operating area (1) ISD ≤26A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Table 4: Thermal Data
Table 5: Avalanche Characteristics
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’sESD capability, but also to make them safely absorb possible voltage transients that may occasionally beapplied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient andcost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid theusage of external components.
SymbolParameterValueUnitVDSDrain-source Voltage (VGS = 0)500V
VDGRDrain-gate Voltage (RGS = 20 kΩ)500V
VGSGate- source Voltage± 30V
IDDrain Current (continuous) at TC = 25°C30A
IDDrain Current (continuous) at TC = 100°C18.9A
IDM ()Drain Current (pulsed)120A
PTOTTotal Dissipation at TC = 25°C313W
Derating Factor2.5W/°CVESD(G-S)Gate source ESD(HBM-C=100pF, R=1.5KΩ)6000V
dv/dt (1)Peak Diode Recovery voltage slope15V/nsTjTstgOperating Junction TemperatureStorage Temperature-55 to 150°C
Rthj-caseThermal Resistance Junction-case Max0.4°C/WRthj-ambThermal Resistance Junction-ambient Max62.5°C/WTlMaximum Lead Temperature For Soldering Purpose300°C
SymbolParameterMax ValueUnitIARAvalanche Current, Repetitive or Not-Repetitive(pulse width limited by Tj max)13A
EASSingle Pulse Avalanche Energy(starting Tj = 25 °C, ID = IAR, VDD = 50 V)740mJ
SymbolParameterTest ConditionsMin.Typ.Max.UnitBVGSOGate-Source Breakdown VoltageIgss=± 1mA (Open Drain)30V
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STW26NM50Table 7: On /Off
Table 8: Dynamic
Table 9: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.(2) Pulse width limited by safe operating area.(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
SymbolParameterTest ConditionsMin.Typ.Max.UnitV(BR)DSSDrain-source Breakdown VoltageID = 250 mA, VGS = 0500V
IDSSZero Gate Voltage Drain Current (VGS = 0)VDS = Max RatingVDS = Max Rating, TC = 125°C 10100µAµA
IGSSGate-body LeakageCurrent (VDS = 0)VGS = ± 20 V± 10µA
VGS(th)Gate Threshold VoltageVDS = VGS, ID = 250 µA345VRDS(onStatic Drain-source On ResistanceVGS = 10 V, ID = 13 A0.100.12Ω
SymbolParameterTest ConditionsMin.Typ.Max.Unitgfs (1)Forward TransconductanceVDS = 15 V , ID = 13 A20SCissCossCrssInput CapacitanceOutput CapacitanceReverse Transfer CapacitanceVDS = 25 V, f = 1 MHz, VGS = 0300070050
pFpFpF
COSS eq (3).Equivalent Output CapacitanceVGS = 0 V, VDS = 0 to 400 V300pF
td(on)trtd(off)tfTurn-on Delay Time Rise TimeTurn-off-Delay TimeFall TimeVDD = 250 V, ID = 13 A, RG = 4.7 Ω, VGS = 10 V(see Figure 15)28
151319
nsnsnsns
QgQgsQgdTotal Gate ChargeGate-Source ChargeGate-Drain ChargeVDD = 400 V, ID = 26 A,VGS = 10 V(see Figure 18)762036106nC
nCnC
SymbolParameterTest ConditionsMin.Typ.Max.UnitISDISDM (2)Source-drain CurrentSource-drain Current (pulsed)26104AA
VSD (1)Forward On VoltageISD = 26 A, VGS = 01.5V
trrQrrIRRMReverse Recovery TimeReverse Recovery ChargeReverse Recovery CurrentISD = 26 A, di/dt = 100 A/µs
VDD = 100V(see Figure 16)
4005.527.8nsµCA
trrQrrIRRMReverse Recovery TimeReverse Recovery ChargeReverse Recovery CurrentISD = 26 A, di/dt = 100 A/µs