apm2054

2
Rev. A.1 - Feb., 2002
APM2054N Unit
Min. Typ. Max.
20
V
1
µA
0.6
1.5
V
±100 nA
35
40
45
54 mΩ
110 130
0.6
1.1
V
11
13
3.8
nC
5.2
12
10 ns
40
20
450
100
pF
60

DataShee

APM2054N
N-Channel Enhancement Mode MOSFETE
Features
•
20V/6A,
RDS(ON)=35mΩ(typ.)
@
V =10V GS
RDS(ON)=45mΩ(typ.) @ VGS=4.5V
• Super High Dense Cell Design
Qg Qgs Qgd td(ON) tr td(OFF)
tf Ciss Coss Crss
Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS=10V, VGS=4.5V, IDS=6A
Turn-on Delay Time
Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
0
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)

DataShee
Threshold Voltage vs. Temperature
1.50 IDS=250uA
1.25
1.00
0.75
0.50
0.25
0.00 -50 -25 0 25 50 75 100 125 150
IDSS VGS(th) IGSS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state RDS(ON) Resistance
TO-252
1 Duty Cycle=0.5
D=0.2
D=0.1 D=0.05
0.1 D=0.02
D=0.01 SINGLE PULSE
0.01
1E-4
1E-3
1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA
0.01
• High Power and Current Handling Capability
• TO-252, SOT-89 and SOT-223 Packages
Applications
Pin Description
GD S
Top View of TO-252
GD
S
Top View of SOT-89
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Rev. A.1 - Feb., 2002

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APM2054N
Absolute Maximum Ratings

RDS(ON)-On-Resistance (Ω)
RDS(ON)-On-Resistance (Ω)
On-Resistance vs. Gate-to-Source Voltage
0.075
ID=6A
0.060
0.045
0.030
0.015
0.000 2 3 4 5 6 7 8 9 10
TSTG Storage Temperature Range
150
°C
-55 to 150
°C
Electrical Characteristics (TA=25°C unless otherwise noted)
Symbol
Parameter
Test Condition

Static BVDSS
Package Code D : SOT-89 U : TO-252
Temp. Range C : 0 to 70 °C
Handling Code TR : Tape & Reel
V : SOT-223
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Normalized Effective Transient Thermal Impedance
Normalized Effective Transient Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
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3
Rev. A.1 - Feb., 2002
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APM2054N
Typical Characteristics
DataSheet4 U .com

APM2054N
Typical Characteristics

VGS(th)-Threshold Voltage (V) (Normalized)
ID-Drain Current (A)
Output Characteristics
Tj - Junction Temperature (°C)
RDS(ON)-On-Resistance (Ω)
On-Resistance vs. Drain Current
0.08
0.07
0.06
0.05
VGS=4.5V
0.04
VGS=10V
0.03
0.02
0.01
0.00 0
2
4
6
8
10
ID - Drain Current (A)
Typical Characteristics

Power (W)
Capacitance (pF)
Capacitance
750
625
500
Ciss
375
250
Coss 125
Crss
0
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
IS-Source Current (A)
Time (sec)
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5
Rev. A.1 - Feb., 2002
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APM2054N
Typical Characteristics
Symbol VDSS VGSS ID IDM
Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed
Rating 20 ±16 6 20
Single Pulse Power
TO-252
250
200
150
100
50
0 1E-3 0.01
0.1 1 10
Time (sec)
100 1000
Power (W)
140 120 100 80 60 40 20
0 0.01
Single Pulse Power
SOT-223/89
0.1
1
10
100 1000
0.05
0.04
0.03
0.02
0.01
0.00 -50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
VGS-Gate-Source Voltage (V)
10 VD=12V ID=2A
8
Gate Charge
6
4
2
0
0
5
10
15
20
VGS - Gate-to-Source Voltage (V)
RDS(ON)-On-Resistance (Ω) (Normalized)
On-Resistance vs. Junction Temperature
2.00 VGS=10V
1.75 ID=12A
1.50
1.25
1.00
0.75
0.50
• Switching Regulators • Switching Converters
Ordering Information
1
2
3
G DS
Top View of SOT-223
APM2054N
Handling Code Temp. Range Package Code
Source-Drain Diode Forward Voltage
20
10
TJ=150°C