DM857C(BC857C)晶体管原厂DCY品牌推荐

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DM858A(BC858A)=3J;DM858B(BC858B)=3K;DM858C(BC858C)=3L
DM857A(BC857A)=3E;DM857B(BC857B)=3F;DM857C(BC857C)=3G DM856A(BC856A)=3A;DM856B(BC856B)=3B;
DM858A,B,C DM857A,B DM856A,B
DM856,857,858(销售型號BC856,857,858)
■FEATURES 特點
PNP General Purpose Transistor
■MAXIMUM RATINGS 最大額定值Characteristic 特性參數
Symbol 符號(BC856A,B),C
(BC857A,B,C)
(BC858A,B,C)
Unit 單位Collector-Emitter Voltage 集電極發射極電壓V CEO -65-45-30Vdc Collector-Base Voltage 集電極基極電壓V CBO -80-50-30Vdc Emitter-Base Voltage 發射極基極電壓
V EBO -5.0-5.0-5.0Vdc Collector Current Continuous
集電極電流-連續
Ic
-100
-100
-100
mAdc
■THERMAL CHARACTERISTICS 熱特性
Characteristic 特性參數
Symbol 符號
Max 最大值
Unit 單位Total Device Dissipation 總耗散功率FR-5Board(1)
T A =25℃溫度爲25℃
Derate above25℃超過25℃遞減P D
2251.8
mW mW/℃Total Device Dissipation 總耗散功率
Alumina Substrate 氧化鋁襯底,(2)T A =25℃Derate above25℃超過25℃遞減
P D
3002.4
mW mW/℃Thermal Resistance Junction to Ambient 熱阻R ΘJA 417
℃/W
Junction and Storage Temperature 結溫和儲存溫度
T J ,T stg
-55to+150℃
■DEVICE
MARKING 打標
■ELECTRICAL CHARACTERISTICS 電特性
(T A =25℃unless otherwise noted 如無特殊說明,溫度爲25℃)
Characteristic 特性參數
Symbol 符號Min 最小值Max 最大值Unit 單位
■OFF CHARACTERISTICS 截止電特性Collector-Emitter Breakdown Voltage 集電極發射極擊穿電壓(Ic=-10mAdc,I B =0)
V (BR)CEO 856A,B 857A,B,C 858A,B,C -65-45-30—Vdc
Collector-Base Breakdown V oltage 集電極基極擊穿電壓(Ic=-10μAdc,I E =0)
V (BR)CBO 856A,B 857A,B,C 858A,B,C -80-50-30—Vdc
Emitter-Base Breakdown V oltage 發射極基極擊穿電壓(I E =-10μAdc,Ic=0)
V (BR)EBO 856A,B 857A,B,C 858A,B,C
-5.0-5.0-5.0
—Vdc Collector Cutoff Current 集電極截止電流(V CB =-30v)(V cB =-30Vdc,T A =150℃)
I CBO —
-15-4.0
nA uA ■ON CHARCTERISTICS 導通電特性Characteristic 特性參數Symbol 符號Min
最小值Typ 典型值Max 最大值
Unit 單位DC Current Gain 直流電流增益H FE

(I c =-10uAdc,V CE =-5.0Vdc)856A,857A,858A
856B,857B,858B
857C,858C 90150270—(I c =-2.0mAdc,V CE =-5.0Vdc)856A,857A,858A
856B,857B,858B
857C,858C
125220420
180290520
250475800
Collector-Emitter Saturation Voltage
集電極發射極飽和壓降(I c =-10mAdc,I B =-0.5mAdc)(I c =-100mAdc,I B =-5.0mAdc)V CE(sat)
——
-0.3-0.65
Vdc
Base-Emitter Saturation V oltage 基極發射極飽和壓降
(I c =-10mAdc,I B =-0.5mAdc)(I c =-100mAdc,I B =-5.0mAdc)
V BE(sat)
-0.7-0.9
Vdc
Base-Emitter Voltage 基極發射極電壓(I c =-2.0mAdc,V CE =-5.0Vdc)(I c =-10mAdc,V CE =-5.0Vdc)
V BE(on)
-0.6—
——
-0.75-0.82
V
DM856,857,858(销售型號BC856,857,858)
■SMALL-SIGNAL CHARACTERISTICS 小信號特性
Characteristic 特性參數
Symbol 符號Min 最小值Typ 典型值Max 最大值Unit 單位Current-Gain-Bandwidth Product 電流增益-帶寬乘積
(I c =-10mAdc,V CE =-5.0Vdc,f=100MHz)f T 100——MHz Output Capacitance 輸出電容(V CB =-10Vdc,I E =0,f=1.0MHz)C obo —— 4.5pF Noise Figure 噪声係數
(V CE =-5.0Vdc,I C =-200μAdc,R s =2.0k Ωf=1.0KHz BW=200Hz)NF


10
dB
■DIMENSION 外形封裝尺寸單位(UNIT):mm
DM856,857,858(销售型號BC856,857,858)。