PBHV8540T,215;中文规格书,Datasheet资料

  • 格式:pdf
  • 大小:124.45 KB
  • 文档页数:11

Conditions VBE = 0 V
open base
VCE = 10 V; IC = 50 mA
Min Typ Max Unit
-
-
500 V
-
-
400 V
-
-
0.5 A
100 200 -
/
NXP Semiconductors
PBHV8540T
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
PBHV8540T
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
Rev. 02 — 14 January 2009
Product data sheet
1. Product profile
1.1 General description
1.2 Features
I High voltage I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I AEC-Q101 qualified
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
Marking code[1] W4*
Version SOT23
PBHV8540T_2
Product data sheet
pF
50 -
ns
6200 -
ns
6250 -
ns
800 -
ns
2200 -
ns
3000 -
ns
PBHV8540T_2
Product data sheet
Rev. 02 — 14 January 2009
© NXP B.V. 2009. All rights reserved.
5 of 12
NXP Semiconductors
400
Ptot (mW)
300
006aab150
200
Hale Waihona Puke 1000−75−25
25
FR4 PCB, standard footprint Fig 1. Power derating curve
75
125
175
Tamb (°C)
PBHV8540T_2
Product data sheet
Rev. 02 — 14 January 2009
-
current
VCB = 320 V; IE = 0 A;
-
Tj = 150 °C
ICES
collector-emitter cut-off VCE = 320 V; IC = 0 A
-
current
IEBO
emitter-base cut-off
VEB = 4 V; IC = 0 A
-
current
-
-
-
-
-
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Typ Max Unit
-
100 nA
-
10 µA
-
100 nA
-
100 nA
200 150 20 100 200 mV 60 90 mV 135 250 mV 0.91 1.1 V
30 -
MHz
4
-
pF
165 -
-
-
[1] −55 −65
Max Unit
500
V
400
V
500
V
6
V
0.5
A
1
A
200
mA
300
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
© NXP B.V. 2009. All rights reserved.
3 of 12
NXP Semiconductors
PBHV8540T
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
6. Thermal characteristics
PBHV8540T_2
Product data sheet
Rev. 02 — 14 January 2009
© NXP B.V. 2009. All rights reserved.
4 of 12
NXP Semiconductors
PBHV8540T
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9040T.
VEB = 0.5 V; IC = ic = 0 A;
-
f = 1 MHz
td
delay time
tr
rise time
ton
turn-on time
ts
storage time
tf
fall time
toff
turn-off time
VCC = 6 V; IC = 0.5 A;
-
IBon = 0.1 A; IBoff = −0.1 A
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
collector-base voltage
7. Characteristics
Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
ICBO
collector-base cut-off VCB = 320 V; IE = 0 A
hFE VCEsat VBEsat
DC current gain
collector-emitter saturation voltage base-emitter saturation voltage
VCE = 10 V IC = 50 mA IC = 100 mA IC = 300 mA
IC = 100 mA; IB = 10 mA IC = 100 mA; IB = 20 mA IC = 300 mA; IB = 60 mA IC = 300 mA; IB = 60 mA
Table 3. Ordering information
Type number Package
Name
Description
PBHV8540T
-
plastic surface-mounted package; 3 leads
4. Marking
Table 4. Marking codes Type number PBHV8540T
1.4 Quick reference data
Table 1. Symbol VCESM
VCEO IC hFE
Quick reference data Parameter collector-emitter peak voltage collector-emitter voltage collector current DC current gain
2. Pinning information
Table 2. Pin 1 2 3
Pinning Description base emitter collector
Simplified outline Graphic symbol
3
3
1
2
1
2 sym021
3. Ordering information
1.3 Applications
I Electronic ballast for fluorescent lighting I LED driver for LED chain module I LCD backlighting I High Intensity Discharge (HID) front lighting I Automotive motor management I Hook switch for wired telecom I Switch mode power supply
Rev. 02 — 14 January 2009
© NXP B.V. 2009. All rights reserved.