VSLY5850, 规格书,Datasheet 资料

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Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 83160 Rev. 1.0, 13-Oct-10
For technical questions, contact: emittertechsupport@
22114
DESCRIPTION
VSLY5850 is an infrared, 850 nm emitting diode based on GaAlAs surface emitter chip technology with extreme high radiant intensity, high optical power and high speed, molded in a clear, untinted plastic package, with a parabolic lens.
IF - Forward Current (mA)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Radiant Power vs. Forward Current
10
1
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Φe, rel - Relative Radiant Power
5.75 ± 0.15
A
Chip position
C
technical drawings according to DIN specifications
Ø 5 ± 0.15 Parabolic lens
5.4 ± 0.3
7.6 ± 0.15
35.85 ± 0.5
12.88 ± 0.3
8.6 ± 0.3
** Please see document “Vishay Material Category Policy”: /doc?99902 Document Number: 83160 Rev. 1.0, 13-Oct-10 For technical questions, contact: emittertechsupport@ 1
1000
tp/T = 0.01 0.02
Tamb < 50 °C
1000
IF - Forward Current (mA)
Radiant Power (mW)
e-
0.05 0.1
100
10
0.2 0.5 100 0.01
1
0.1
0.1 1 10 100
16971
1
10
100
1000
16031
tp - Pulse Duration (ms)
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VSLY5850
Vishay Semiconductors High Speed Infrared Emitting Diode,
850 nm, Surface Emitter Technology
200 180
120 100 80 RthJA = 230 K/W 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100
Ie - Radiant Intensity (mW/sr)
40° 1.0 50° 0.9 60° 0.8 70° 80° 0.7 0.6 0.4 0.2 0
100
10
tP = 100 µs
1 0.001
22117
0.01
0.1
1
22132
IF - Forward Current (A)
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Power vs. Wavelength

10 000
10°
20°
30°
ϕ - Angular Displacement
1000
Ie rel - Relative Radiant Intensity
2
For technical questions, contact: emittertechsupport@
Document Number: 83160 Rev. 1.0, 13-Oct-10
芯天下--/
VSLY5850
0.75 - 0.12 Aera not plane
VSLY5850
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
FEATURES
• • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Leads with stand-off Peak wavelength: p = 850 nm High reliability High radiant power High radiant intensity Narrow angle of half intensity: = ± 3° Suitable for high pulse current operation Good spectral matching with CMOS cameras Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared radiation source for operation with CMOS cameras • High speed IR data transmission • Smoke-automatic fire detectors • IR Flash
PRODUCT SUMMARY
tp = 100 µs
IF = 30 mA 0.75
IF - Forward Current (A)
1
0.1
0.5
0.01
0.25
0.001 0
22097
0.5
1
1.5
2
2.5
3
3.5
21776-1
0 650
750
850
950
VF - Forward Voltage (V)
λ - Wavelength (nm)
PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of e Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of p Rise time Fall time IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 100 mA, tp = 20 ms IF = 100 mA TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 1 mA IF = 10 mA SYMBOL VF VF TKVF TKVF IR Cj Ie Ie e TKe p TKp tr tf 840 300 MIN. TYP. 1.65 2.9 - 1.45 - 1.25 not designed for reverse operation 125 600 5100 55 - 0.35 ±3 850 30 0.25 10 10 870 900 MAX. 1.9 UNIT V V mV/K mV/K μA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns
COMPONENT VSLY5850 Ie (mW/sr) 600 (deg) ±3 p (nm) 850 tr (ns) 10
Note • Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE VSLY5850 Note • MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
3
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VSLY5850