Nonlocal resistivity in the fluctuation region of thin superconducting film.

PIE培训课程1 為何需要Start Oxide? 32 為何需要Zero layer? Laser Mark? 33 目前常用的晶片阻值為何? 換算成濃度值多少？44 矽原子的Lattice constant為何? 換算成表面濃度，體積濃度各是多少? 45 Well製程影響那些元件特性？56 從0。

5um至0。

18um製程, Well部分的製程改變為何？其原因何在? 57 何謂LOCOS? Typical process flow? 68 何謂STI？Typical process flow？69 STI對IC製程有何影響？可控制因子有哪些？710 何謂ODR？對產品有何影響？811 ODR pattern density對STI CMP有何影響? 812 B-Clean的目的為何? 目前共有幾種B-Clean recipe存在FAB內? 個別的目的有何不同? 813 何謂Epi—Wafer? 對產品有何影響？1014 SiN CVD dep時爐管各部分的溫度別控制在什麼範圍？為什麼如此？1015 STI蝕刻後需檢查什麼地方以確保蝕刻正常? 這些項目在密集區何疏散區有何不同? 1116 Active PHO (OD PHO）需檢查什麼以確保製程正確無誤？這些項目和黃光製程的什麼參數有關? 1117 黃光區曝光機共有幾種機型? 他們各別有什麼任務？試列表比較其特性? 1218 line和DUV分別用什麼樣式的光阻? 試列表比較各光阻特性? 1419 ODR光罩和OD光罩有何關係？試畫圖解釋之. 1520 總共有多少種光阻去除方式？個別適用於何種情況? 1621 去除Si3N4時，為何要在熱磷酸之前加50:1 HF蝕刻？此蝕刻時間太短有何影響？1722 熱磷酸對Si3N4，Oxide的蝕刻率分別是多少? 蝕刻率可控制因子為何? 1723 Sacrificial oxide (SAC oxide）的目的為何? 1724 Vt IMP的目的為何? 對產品電性有何影響？1825 N-well implant打入P31，120KeV。

本科生科研训练题目高能量密度柔性赝电容器中的二维磷酸氧钒超薄结构（翻译）院系物理科学与技术学院专业物理学基地班年级2012级学生姓名李赫学号**********二0一三年十二月二十日natureCOMMUNICATIONS2013年2月5号收到稿件2013年8月12日接受稿件2013年9月12日发表稿件DOI: 10.1038/ncomms3431高能量密度柔性赝电容器中的二维磷酸氧钒超薄结构二维材料一直以来在柔性薄膜型超级电容器，以及表现有关灵活性，超薄度甚至透明度的强劲优势上都是一个理想的构建平台。

要探索新的具有高电化学活性的二维赝电容材料，我们需要获得具有高能量密度的柔性薄膜超级电容器。

这里我们介绍一个无机石墨烯类似物，a1钒，一种少于6个电子层的磷酸盐超薄纳米片来作为一个有发展前景的材料去构建柔性全固态超薄赝电容器。

这种材料展示了一个在水溶液中氧化还原电位(~1.0V)接近纯水电化学窗口电压（1.23V）的赝电容柔性平面超级电容器。

通过层层组装构建出的柔性薄膜型超级电容器的氧化还原电位高达1.0V，比容量高达8360.5 μF∙cm-2，能量密度达1.7 mWh ∙cm-2，功率密度达5.2 mW∙cm-2。

现在，便携式消费电子产品的需求在快速增长，如柔性显示器，手机和笔记本电脑，极大推动了在全固态下的柔性能源设备的开发。

作为未来一代的储能装置，柔性薄膜型超级电容器在全固态下提供柔韧性，超薄型和透明度的协同效益。

在不同的类型的超级电容器中，与电双层电容器相比，赝电容器因为自身的高活性表面的电极材料可以快速发生的氧化还原反应而具有明显优势。

与锂离子电池相比，它表现出更高的能量密度，以及更高的功率密度。

因此，承载着为实现高性能的柔性薄膜型超级电容器的全固态伟大的承诺（FUSA）与电容行为。

具有赝电容特性的二维（2D）类石墨烯材料代表着一个有前途的方向可以去实现全固态下的高能量密度柔性超级电容器，和潜在的优良的机械柔性。

可靠性：PMOS 薄栅氧PMOS 器件的HCI 效应和NBTI 效应《半导体制造》 2006 年 10 月刊作者： Joyce Zhou 、 Jeff Wu、 Jack Chen 、 Wei-Ting Kary Chien, 中芯国际随着 CMOS 晶体管尺寸的不断微缩，人们越来越关注 PMOS HCI（热载流子注入）可靠性问题。

本文对薄栅氧PM OS 晶体管的可靠性进行了准确的表征，并且深入研究了其衰减机制。

此外，我们还对引起PMOS 器件衰减的 N BTI（负偏压温度不稳定性）效应进行了解释说明。

对 PMOS 而言，最坏的衰减条件与 Vg 大小非常相关。

为此，我们提出一种方法以证明 PMOS 衰减是在较大Vg 条件下由HCI 效应导致的漏极缺陷引起的，它与NBTI 效应完全不同。

此外，我们还分别解释了HCI 和 NBTI 效应的机理。

最后，我们研究了 HCI和NBTI 的综合效应。

在 HCI 和NBTI的综合作用下，超薄栅氧 PMOS 器件参数的衰减程度比单独的 HCI 或 NBTI 效应要严重得多。

为了找到薄栅氧 PMOS 器件 HCI效应的最坏条件，实验中我们对 1.2V和1.5V 短沟道 PMOS 器件进行了测试。

我们提出了一种在较高栅电场下区分 HCI 效应和 NBTI 效应的方法。

此外，我们还对这两种效应（即 HCI 和 NBTI）导致的器件参数偏移之间的相关性进行了研究，并且探讨了 HCI-NBTI 综合效应对薄栅氧 PMOS 器件可靠性的严重影响。

下一节我们将介绍 HCI 的最坏条件。

为了检测 HCI 效应引起的漏极损伤问题，我们在下一节中引入了“偏移”参数（Offset）。

然后，我们对非均匀 NBTI 效应进行了描述。

薄栅氧 PMOS 器件 HCI 效应的最坏条件正如JEDEC-60 提到的那样，在施加大小为 Vg 的栅偏压条件下， p沟道器件的参数变化程度最大，此时栅电流也处于最大值（Ig）[1] 。

Recently,topological insulator has attracted great interests due to its peculiar band structures and electronic properties.The two-dimensional quantum spin Hall systems and three-dimensional TIs including Bi2Se3,Bi2Te3,and Bi1-xSbx have theoretically proposed and experimentally observed.They have a bulk excitation gap and gapless edge states for 2D TIs and 2D surface at boundaries:1D edge states for 2D TIs and 2D surface states for 3DTIs.The surface states of 3D TIs with an odd number of Dirac cones are robust against(weak and nonmagnetic)disorder scattering and many-body interactions.The Bi2Se3 material has been predicted and verified to have a bulk gap of 0.3 eV and a single Dirac come of surface states.The 3D TIs are expected to show several unique properties when the time reversal symmetry is broken.The latter can be realizes directly by a ferromagnetic insulating(FI) layer attached to the 3D TI surface.The motion of the Dirac electrons is influenced mainly by the magnetization of the FI layer rather than its stray field.This is in contrast to the Schodinger electrons in conventional semiconductor heterostructures modulates by nanomagnets.Some features of Dirac fermions on the surface of a TI have been revealed in the presence of proximate FIfilms,which have no analog in either graphene or 2D Schrodinger electrons.However,the effect of a magnetic superlattice on such kind of 2D carriers has not been examined so far.In this work,we study the band structures and ballistic transport of Dirac electrons on the TI surface under the modulation of a periodic magnetic superiattice.For a finite superlattice,when half of the FI stripes switch their magnetization directions a tunneliing magnetoresistance (MR) witha tunable sign is obtained. The system under consideration is a 2D electron gas on a given surface of a 3D TI like Bi2Sw3,as sketched in Fig.1.The surface is taken to be the(x,y) plane.Two kinds of FI materials with different coercive fields are deposited alternatively on top of the surface to form a magnetic superlattice along the x axis.For simplicity,we assume that all FI stripes have the same width a/2 and magnetization strength mo.The smallest distance between them is a/2.The magnetization of a FI stripe induces an exchange field for the Dirac fermions due to the proximity of TI and ferromagnetism.The easy axis of a FI stripe is usually along its length direction and thus either in parallel(p)or antiparallel (AP) with the +y axis.The initial magnetic superlattice with such a magnetization configuration is shown in Fig.1(a),which has a lattice constant a.For the soft FI material,a small in-plane magnetic field can switch its magnetization orientation.Accordingly,the magnetizations of adjacent FI stripes are changes fron the P to the AP alignment while the lattice constant of the magnetic superlattice turns to be 2a.In the presence of the periodic exchange field generated by N FI stripes,the motion of eletrons on the TI surface can be described by the 2D Dirac Hamiltonianwhere vF is the Fermi velocity,P=(px,py) is the electron momentum,7x and *y are Pauli matrices in spin space,M is the effective exchange field,and my(x) takes a constant value mo in the stripe regions with magnetization aligned to the y axis and zero otherwise.For convenience we express all quantities in dimensionless units by means of the length of the basic unit a and the enegy &*.For a typical value of a=50 nm and the Bi2Se3 material,one has Eoowing to the translational invariance of the system along the y direction,the total wave function of Dirac electrons can be expressed as &&,where ky is the transverse wave vector.At each region with a constant exchange field my,the reduced one-dimensional wave function & for a givenincident energy E can be written aswhere & and & together with the wave amplitudes c(x) and d(x) are piecewise constant.From the requirement of wave function continuity and the scattering boundary conditions,the transmission amplitude t can be calculated by means of the scattering matrix method.Note that t depens strongly not only on the incident energy Eand the transverse wave vector k,but also on the magnetization configuration.The ballistic conductance at zero temperature can be expressed in terms of the transmission amplitudewhere & is the incident angle relative to the x direction.Ef is the Fermi energy ,& is taken as the conductance unit,and & is the length of the device in the y direction.In order to understand the effect of the periodic exchange field on the transport properties of Dirac electrons,it isinstructive to investigate the band structures of a perfect magnetic superiattice on the surface of a 3D TI.For a given Bloch wave vector k ,the band energy E(k) can be derived analytically from the continuity requirement of the wave function and the periodic boundary condition of the superlattice.For the P magnetization configuration shown in Fig.1(a),the transcendental equation is given byNote that the exchange field in this configuration is equivalent to a periodic array of fictitions & magnetic fields with the same height but alternative sign.The result is thus the same as that in Ref.18.It should be emphasized that the physical origin of the magnetic superlattice in Ref.18 is distinct from that considered here.For the AP magnetization configuration shown in Fig.1(b),the analytical expression of the dispersive relation reads Fig.2 (Color online) Dispersion relations of Dirac electrons modulated by the magnetic superlattic witha P and AP configuration.In&and * the band energy Eat two k,values,ky=0(solid line) and ky=-1(dashed line),is plotted as a function of the Bloch wave vector k under the magnetization strenths mo=2 and m0=3.In c and f the variation in E with k,is plotted under two magnetization strengths mo=2 (circle marks) and mo=3（triangular marks）It is clearly seen from Eqs.4and5 that for a given mo and ky the Bloch wave vector k is only relevant to E.Thus the energy spectrum is symmetric with respect to E=0.Hereafter we consider only the nonnegative energy regime.The condition for the analytical expressions.For the Pmagnetization alignment & and the zero-energy solution requires k=0 and & .As for the AP configuration,the system has a symmetry related with the operator T,where T is the time reversal and R is the reflection X (x is a central point of the superlattice).The energy spectrum is thus symmetric about ky =0.The zero-energy solution appears only when k=0 and ky=0.Note that for both cases the zero-energy solution is unique and the transverse velocity & should vanish at &.For a general ky and mo a band gap including the point E=0 will be opened by the periodic magnetic modulation.The size of the band gap depends on the values of ky and mo.The general band features discussed above are reflected in the numerical solutions of Eqs.4and5,which are shown in Fig.2.It canbe observes that around the zero-energy solutions the energy spectrum is linear.Thus the Diac point is shifted by the magnetic superlattice with the P configuration but is unchanged in the AP configuration.In both cases,the velocity of the linear spectrum depends on mo.For E>k,the ky-dependent term in Eq.1 can be viewed as a perturbation,resulting in a slow variation in E with ky.For the same ky and mo the band gap of the P configuration overlaps only partly with that of the AP alignment.This may lead to a tunneling MR with a tunable sign.Figure 3 presents the trandmission probability as a function of the Fermi energy and the incident angle & for mo=2.The number of FI stripes is chose to be N=50.The transmission spectrum demonstrate an obvious angular anisotropy for both the P and AP alignment.For the P alignment t is blocked for all incident angles when the incident energy E locates in the full transmission gap.This can be understood from two aspects.One is that in the superlattice region there exists a band gap including E=0 for a large .The transmission is usually rather small as the incident energy falls into a band gap.The other aspect is that for & although the band gap of the incident region requires &.Outside the full transmission gap a large transmission is usually allowable for a negative angle &.The reason is that in the superlattice region the Dirac point is shifted to the k-point.Resonant features under positive incident angles can be seen due to the presence of quasibound states.For the AP alignment the transmission shown in Fig.3b is symmetric with respect to the angle&,as a result of the symmetry mentioned above.The reflection is almost complete in the whole & region for E=&,which is a common part of the band gaps for all available ky.As demonstrated above,the transmission features for the P and AP confifurations are quite distinct.Such a difference is also exhibited in the measurable quantity, the conductance G and G.In Fig.4 the conductance is plotted as a function of the Fermi energy for several values of the exchange field.For a amall mo,there exist several conductance valleys for both the P and AP alignment.With the increasing of mo the valleys move toward the high-energy region and become wider and lower.Finally,the valleys will turn to a conductance-forbidden region.When E lies in the full transmission gap of the P(AP) alianment,the conductance & is rather small while the conductance & can be large.The MR ratio is defined as 7 .The conductance spectrum in Fig.4 indicate a large ME amplitude in the full transmission gaps of both the P and AP alignmeng\t.Since the two kinds of full transmission gaps may have no overlap,the sign of the MR is alternated as the Fermi energy increases.In summary, we have studied the band structures and transport features of Dirac electrons on the surface of a 3D TI subject to a periodic exchange field.The superlattice modulation is provided by a series of equally spaced FI stripes which sre attached to the TI surface.The magnetizations of adjacent FI stripes can be switched between the parallel and antiparallel configurations.The Dirac point is shifted by the magnetic superlattice,we have shown a full transmission gap for both the parallel and antiparallel configurations.For a suitable range of the magnetization strength,the two kinds of trnsmission gaps are nonoverlapped and thus a large MR with a tunable sign can be achieved.。