On_the_effective_carrier_lifetime_in_p-s-n_rectifiers_at_high_injection_levels

ATLAS常见问题解答Q1 The ATLAS User’s manual, Vol. II said that the conversion from resistivity to carrier concentration is base on table, which is derived from Arora mobility model. Could you inform me in more detail about thosetables and the conversion tool (if there is one)?A1 The conversion of resistivity to carrier concentration in silicon using the RESISTI parameter in the DOPING statement is base on the followingequation:Carrier Concentration = 1 / (R * q * u) (in cm-3)where R is the resistivity (in ohm-cm); q is the charge; and u is themobility (in cm^2/V.s).In ATLAS, Arora mobility is used for computing the carrier concentration.The computation of the resistivity to carrier concentration in Silicon forboth N-type and p-type carrier are as shown in the figure below.Top Q2Part I: How can I simulate the short circuit current, Isc and open voltage, Voc of a Solar Cell in ATLAS?A2 The short circuit current, Isc can be extracted from the IV curve when thevoltage is 0 while the open circuit voltage can be extracted from the IV curve when the current 0. The figure below shows the location of the Isc and Voc values. The commands used to extract both values are as follows:extract init inf="Solar_IV.log"# Extract Short Circuit Current extract name="short_circuit_current" y.val from curve(v."cathode",i."cathode") where x.val=0# Extract Open Circuit Voltage extract name="open_circuit_voltage"x.val from curve(v."cathode",i."cathode") where y.val=0TopQ3 Part II: How can I include a variable load resistance (external load) into the simulation program and simulate the IV characteristics of a Solar Cell?A3 There are 2 methods of adding an external resistance to a device:i. The first method is to add a lump element; andii. The second method is to add a distributed contact resistance.The first method is to specify the value of the resistance in the "RESISTANCE" option of the CONTACT statement. However, this method is only applicable for planar metal-semiconductor surface.The second method is to add a distributed contact resistance, fornon-uniform metal-semiconductor surface. For this method, theCON.RESIST option was used instead in the CONTACT statement. Below give an example of how to compute the CON.RESIST value.Assuming an external load of 50ohm at the Cathode contact, the CON.RESIST (in ohm-cm^2) is calculated as follow:CON.RESIST = 50 x Cathode_length x cathode_width = 50 x 140 um x 1um = 7e-5 ohm-cm^2Then, you need to specify the CONTACT statement as below:CONTACT NAME=CATHODE CON.RESIST=7E-5Below shows the simulated IV characteristics of a Solar Cell with and without a 50 ohm external load.To extract the channel length, use the following EXTRACT statement as follows:extract name="junc_source" xj silicon mat.occno=1 y.val=0.22junc.occno=1 extract name="junc_drain" xj silicon mat.occno=1y.val=0.22 junc.occno=2 extract name="Channel Length"$"junc_drain"-$"junc_source"Top Q4 How to extract Ioff in SILVACO TCAD tools?A4 Firstly you should know the definition of Idsat and Ioff. When Ioff is defined as the drain current at gate voltage equals to 0v, you can usefollowing statement:Extract name=”Ioff” y.val from curve(v.”gate”, i.”drain”) where x.val=0After run this statement, you will get a result which is stored in file"results.final".TopQ5 I have finished the simulation of BJT and get the IV curve, but I could find how to display the curve beta vs. base voltage. Is that possible to display such curve?A5 Yes, it can. Firstly launch TonyPlot and open the log file which include IV curve. Then, click “tools”-> “display” in the menu, select “Function 1” in the “Y Quantities”After that, click button “Functions…” which is in the left-bottom. A window will pop up like following:In this window, type in “Collector Current / Base Current” which is also showed in above picture ( because beta is defined as beta=Ic/Ib )Then click “Ok” to finish. Then you will get a curve which x axis is base voltage, and y axis is beta. See follows:TopQ6 How to obtain the Capacitance-Voltage (CV) curve of a MOS capacitor at low frequency?A6 In the simulation of CV curve, SRH model needs to be added to the input deck file. This is because when reverse biasing the MOS capacitor,GENERATION in the depletion region actually dominate overRECOMBINATION, as the carrier concentrations are less than theirthermal equilibrium values; i.e. pn < ni2.The generated carriers in the depletion region can contribute to the flow of an external current, I. This I = Integral of C w.r.t. V. Therefore, whenthe generated carriers increases -> I increases -> C increases.The generation rate in the depletion region, G = ni/2T, where T is thelifetime of the effective lifetime, i.e. T = (Tn + Tp)/2. Therefore, G isinversely proportional to T => The shorter the lifetime T, the greater the generation rate G => greater I => greater C.Hence it is necessary to add the SRH model and also reduce theeffective lifetime of the carriers in the bulk for simulating the CV curve.This can be done by adding the following statements:material taun0=1e-11 taup0=1e-11 model srhBelow shows the simulated Capacitance-Voltage (CV) curve of a MOS capacitor at high and low frequency.TopQ7 The MOS capacitor being a two terminal device, the two capacitances should be identical in magnitude. Simulation however shows them to be a few orders of magnitude different. Our theoretical estimation tell us that Csubstrate-gate between 8e-16 to 1.5e-15 Farad is correct.Cgate-substrate is between 3.9e-19 and 4.8e-19 F is confusing to us.A7 Atlas performs a small signal ac analysis as described in the paper by Laux Ref. 74 of Atlas vol II Bibliography.According to ref. 46, the admittance matrix is defined as:Y(ij) = I(i) / V(j)where I(i) and V(j) are the phasor terminal current and voltagerespectively. The real part and imaginary part of the admittance matrix determine the conductance matrix G and the capacitance matrix Crespectively.In Atlas, it is these conductance and capacitance that are being output.For instance, the capacitance matrix C is calculated as follows:Imag Y21 = -1*(2*3.14*frequency*Cgate>substrate) [input port=Gate,output port=Substrate]Imag Y12= -1*(2*3.14*frequency*Csubstrate>gate) [inputport=Substrate, output port=Gate]Therefore, the value of Cgate>substrate does not equal toCsubstrate>gate.Top Q8 In general, how to solve convergence problem?A8 To solve convergence problem,1) Try the refine your mesh especially at areas where carriers activity aremost prominent such as areas near and at the junction or the Schottkycontact,2) Use a smaller step size (e.g. vstep = 0.1 or even vstep = 0.01) ratherthan a large one such as 2V.3) By default, only Newton method is used. Try to use both the Gummeland Newton Methods in the Method statement. This will cause the solver to start with Gummel iterations and then switch to Newton, ifconvergence is not achieved. This is a very robust, although more time consuming way of obtaining solutions for any device.4) Refer to ATLAS User's Manual on "Choosing Numerical Method" pp.2-27 to decide on the most appropriate methods to be used for yourdevice.TopQ9Can you tell me how to retrieve the default parameters of SiC in theATLAS?A9The default value of all material can be found in ATLAS User's manualvol. II Appendix B (You should have a pdf format of ATLAS manual in your silvaco directory: /doc). You may also view it by adding the "print" option in the Model statement.TopQ10I notice in Appendix B, Page 21, there lists some optical properties of several semiconductors such as Si, AlAs, GaAs... How about ternary compound semiconductor and quaternary semiconductors, such as InGaAs or InGaAsP? A10All the default complex index of refraction for Si, AlAs, etc are listed inB-21. For those materials which are lack of complex index of refraction, you need to specify the index indicated in pp. 8-11 of ATLAS User's Manual Vol. 1.i. To set single values of Refractive Index regardless of wavele ngth, you may use the REAL.INDEX and IMAG.INDEX parameters of theMATERIAL statement to set the real and imaginary indices of the ternary and quaternary material, region or regions;ii. To set a Wavelength Dependent Refractive Index for multispectral simulations, you need to specify index versus wavelength:a.In a file known as the INDEX file. Note that if you use this method, onlylinear interpolation from the table in the INDEX file will be used.b. Use the C-INTERPRETER function in which it can returns wavelength dependent real and imaginary indices.Also note that you can add the INDEX.CHECK parameter to any SOLVE statement to print out the refractive indices being used for that bias step.TopQ11 How to define a new material such as InGaN by using the C-Interpreter? A11 It is possible to simulate the user-defined material such as InGaN by using the C-Interpreter. The template file for the C-Interpreter is asattached. Please save this file in your working directory i.e.C:\SILVACO\work. The procedure involves in specifying e.g. the bandcomposition, for user-defined material i.e. InGaN using the C-Interpreter are listed below:1. In your MATERIAL statement, you need to define: materialmaterial=InGaN f.bandcomp="xxx.lib"where F.BANDCOMP specifies the name of a file (in this case is xxx.lib) containing a C-INTERPRETER function for the specification oftemperature and composition dependent band parameter models.2. Next, open the template file i.e. C_template, using WORDPADApplication. Go to the F.BANDCOMP function and you will seesomething as shown below:/** Temperature and composition dependent band parameters* Statement: MATERIAL* Parameter: F.BANDCOMP* Note: This function can only be used with BLAZE.* Arguments:* xcomp composition fraction "X"* ycomp composition fraction "Y"* temp temperature (K)* *eg return: band gap (eV)* *chi return: affinity (eV)* *nc return: conduction band density of states* *nv return: valence band density of states* *degdt return: derivative of Eg with respect to T*/int bandcomp(double xcomp,double ycomp,double temp,double*eg,double *chi,double *nc,double *nv,double *degdt){return(0); /* 0 - ok */}This function accepts the X composition, Y composition value and the temperature. It can return the bandgap, electron affinity, conduction and valence band density of states and also derivative of Eg with respect to temperature. ATLAS will then solves the electrical characteristics self consistently with the returned values.You can add your equations after the parenthese {, to express the eg, chi, nc and nv in term of the xcomp and/or ycomp, etc ... For example, if the bandgap equation for In(x)Ga(1-x)N is 1.89x + 3.42(1-x) - 3.8x(1-x), the command is as follows:*eg = 1.89*xcomp + 3.42*(1-xcomp) - 3.8*xcomp*(1-xcomp);(Refer to Appendix A: C-Interpreter Functions in ATLAS User's Manual Vol II for more detail)3. After you have added the equations, save this file as "xxx.lib" and make sure that this file is in the same working directory as the input deck file.4. You can then run the input deck file.TopQ12 In Atlas, I can only define CVT transverse field dependent mobility model. But how to define parallel field dependent CVT MODEL?A12 To define parallel field dependent CVT MODEL, go to Deckbuild Commands -> Models. Select "CVT" and "Field Dependent" under theMOBILITY section. Then you can define their parameters by clicking on the "Define Parameters" -> "Field Dependent ..." or "CVT ...".TopQ13 How to get low temperature characteristics of MOSFETs devices in ATLAS for 2D simulation?A13 You can simulate the low temperature characteristics by setting the "Temperature" parameter in the MODEL statement. For example, to set the temperature to 100K, type: model temperature=100TopQ14 I would like to use different dielectric constant value of gate materials. How to incorporate it?A14 You can define the dielectric constant of the Gate using the MATERIAL statement (refer to pp. 15-53 of ATLAS User's Manual Volume 2) asfollows:MATERIAL material=X permittivity=Ywhere X is the material from the Table B-1 in Appendix B (ATLAS User's Manual Volume 2) that the MATERIAL statement should apply. All theregions defined as being composed of X material will be affected. Y isthe dielectric permittivity of the material X.TopQ15 What are the parameters that can be adjusted so that the bandgap between Ec and Ef will be altered to that of strained-Si?A15 The correct parameters to be adjusted are "NC300" and "NV300" in the MATERIAL statement. This is because (referring to ATLAS User Manual pp. 3-5 "Effective Density of States") from equation 3-27 and 3-28, Ncand Nv is a function of (Ef - Ec) and (Ev - Ef) respectively. Therefore, by decreasing the value of, says Nc, and with a given doping concentration, the difference between (Ec - Ef) will also decrease. Note that the default values for NC300 and NV300 is 2.8e19 and 1.04e19 respectively.TopQ16 How can I plot the energy band diagram in TONYPLOT?A16 To plot the energy band level in TONYPLOT, in your input deck file, you need type the statements:output qfn qfp con.band val.bandstruct outfile=test1.strThe OUTPUT statement specifies the eletron quasi-fermi level, holequasi-fermi level, conduction band and valence band (refer to the ATLASUser's Manual Vol. 2 pp. 15-106 for the OUTPUT statement) to beincluded into the structure file (second statement). Without thisstatement, you will not have the fermi energy level, conduction band, etc in your structure display. Then plot the structure "test1.str" and do aCutline (refer to VWF Interactive Tools Vol. 1 Tonyplot Cutline pp. 6-32).Top Q17Why the capacitances extracted by ATLAS has two pair of values for e.g.the capacitance between base and emitter, ATLAS calculateC(base>emitter) and C (emitter>base)? Furthermore, why are these two capacitances i.e. C(base>collector) and C(collector>base) not equal?A17 This is because you are performing DC analysis together with AC analysis using the SOLVE statement:# 2-base 3-emittersolve v2=xxx v3=xxx vstep=xxx electr=23 nstep=x ac freq=1e6 directIn this case, ATLAS will actually pump-in the small signal at the Emitter electrode, Base Electrode and Collector Electrode one at a time andcalculate the Conductance and Capacitance. If the small-signal is input at the Base Electrode, then the capacitance displayed in TONYPLOT will be Cemitter>base, Cbase>base and Ccollector>base. Since in morecases, we are only interested in the AC analysis with small-signal at the Base Electrode, therefore, Cemitter>base, Cbase>base andCcollector>base are the correct capacitances to look for.The capacitance values must be extracted when the transistor is in theOFF state.Above shows the capacitances plot of an HBT. As can be seen from the graph, C(base_collector) and C(collector_base) are exactly the same below V=0.65V (threshold voltage of the HBT is about 0.65V). Beyond this threshold voltage, the capacitance values become different.Below shows the capacitance extracted when the HBT is in the OFF state i.e. Vbase and Vcollector=0.1V at frequency=1MHz:Small Signal Electrode: emitterElectrode Conductance(siemens/micron)Capacitance(farads/micron)emitter -1.05E-14 -1.02E-15 base 1.19E-14 1.02E-15 collector -9.27E-16 3.50E-26 Small Signal Electrode: baseElectrode Conductance(siemens/micron)Capacitance(farads/micron)emitter 1.22E-14 1.02E-15 base -1.03E-12 -1.89E-15 collector 1.02E-12 8.68E-16 Small Signal Electrode:collectorElectrode Conductance(siemens/micron)Capacitance(farads/micron)emitter -1.16E-15 3.50E-26base 1.02E-12 8.68E-16collector -1.02E-12 -8.68E-16As can be seen, the simulatedC(emitter_base)=C(base_emitter)=1.02E-15,C(base_collector)=C(collector_base)=8.68E-16 ... etcIn short, the capacitance should be simulated without turning ON thetransistor.TopQ18When simulating the spectrum response of an InGaN/GaN QuantumWell LED, the simulated spectrum is not symmetrical on both sides. The spectrum simply falls to zero intensity abruptly after reaching the peakintensity as shown below. May I know how to obtain a symmetricalspectrum plot?A18 You need to include the Lorentz line broadening model to the quantum well model. Line broadening is enabled by specifying LORENTZ on the MODEL statement. The extent of the broadening can be specified byeither the WELL.GAMMA0 or the WELL.TAUIN parameters of the MATERIAL statement. By adding the LORENTZ model and changing the WELL.GAMMA0 to 2e-2, below shows the simulated LED Spectrum plot.。

1Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United om 2Institut fu¨r Solarenergieforschung Hameln/Emmerthal, Am Ohrberg 1, Emmerthal 31860, Germany 3MEMC Electronic Materials, viale Gherzi 31, Novara 28100, Italy 4MEMC Electronic Materials, via Nazionale 59, Merano 39012, Italy
JOURNAL OF APPLIED PHYSICS 110, 053713 (2011)
The effect of oxide precipitates on minority carrier lifetime in p-type silicon
J. D. Murphy,1,a) K. Bothe,2 M. Olmo,3 V. V. Voronkov,4 and R. J. Falster1,3
The formation of oxide precipitates is complicated by the morphological transformation they undergo as they grow.16,17 One study has focused on this transformation with
a)Author to whom correspondence should be addressed. Electronic mail: john.murphy@.

• Discuss carrier drift current density. • Discuss the mechanisms of lattice scattering and impurity scattering. • Define mobility and discuss the temperature and ionized impurity concentration dependence on mobility.
1. Describe carrier drift current density and carrier diffusion current density. Define conductivity and resistivity. What’s the Einstein relationship? 2. Discuss the mechanisms of lattice scattering and impurity scattering. What are the temperature and ionized impurity concentration dependence on mobility? 3. Discuss velocity saturation.
3-Checkpoint • Discuss the concept of allowed and forbidden energy bands in a single crystal both qualitatively and more rigorously from the results of using the Kronig-Penney model. • Discuss the splitting of energy bands in silicon. • Discuss the concept of a hole in terms of the effective mass, covalent bonding and energy bands. • Qualitatively, in terms of energy bands, discuss the difference between metals, insulators, and semiconductors. • Understand the density of states function. • Understand the meaning of the Fermi-Dirac distribution and the Fermi energy.

Silicon Labs OpenThread SDK 2.3.0.0 GA Gecko SDK Suite 4.3June 7, 2023Thread is a secure, reliable, scalable, and upgradeable wireless IPv6 mesh networking Array protocol. It provides low-cost bridging to other IP networks while optimized for low-power /battery-backed operation. The Thread stack is designed specifically for Connected Homeapplications where IP-based networking is desired and a variety of application layers maybe required.OpenThread released by Google is an open-source implementation of Thread. Googlehas released OpenThread in order to accelerate the development of products for the con-nected home and commercial buildings. With a narrow platform abstraction layer and asmall memory footprint, OpenThread is highly portable. It supports system-on-chip (SoC),network co-processor (NCP), and radio co-processor (RCP) designs.Silicon Labs has developed an OpenThread-based SDK tailored to work with Silicon Labshardware. The Silicon Labs OpenThread SDK is a fully tested enhanced version of theGitHub source. It supports a broader range of hardware than does the GitHub version,and includes documentation and example applications not available on GitHub.These release notes cover SDK version(s):2.3.0.0 GA released on June 7, 2023Compatibility and Use NoticesFor information about security updates and notices, see the Security chapter of the Gecko Platform Release notes installed with this SDK or on the TECH DOCS tab on https:///developers/thread . Silicon Labs also strongly recommends that you subscribe to Security Advisories for up-to-date information. For instructions, or if you are new to the Silicon Labs OpenThread SDK, see Using This Release.Compatible Compilers:GCC (The GNU Compiler Collection) version 10.3-2021.10, provided with Simplicity Studio.Contents1New Items (1)1.1New Components (1)1.2New Features (1)1.3New Radio Board Support (1)2Improvements (2)3Fixed Issues (3)4Known Issues in the Current Release (4)5Deprecated Items (5)6Removed Items (6)7Multiprotocol Gateway and RCP (7)7.1New Items (7)7.2Improvements (7)7.3Fixed Issues (7)7.4Known Issues in the Current Release (8)7.5Deprecated Items (8)7.6Removed Items (8)8Using This Release (9)8.1Installation and Use (9)8.2OpenThread GitHub Repository (9)8.3OpenThread Border Router GitHub Repository (9)8.4Using the Border Router (9)8.5NCP/RCP Support (10)8.6Security Information (10)8.7Support (11)New Items 1 New Items1.1 New ComponentsNone1.2 New FeaturesAdded in release 2.3.0.0•The versions of OpenThread and the OpenThread Border Router have been updated. See sections 8.2 and 8.3.•Thread 1.3.1 (experimental)o IPv4/v6 public internet connectivity: NAT64 improvements, optimization of published routes and prefixes in network data o DNS enhancements for OTBRo Thread over Infrastructure (TREL)•Network Diagnostics Improvements (experimental)o Child supervision by parento Additional link quality information in child tableo Uptime for routers•Support for the ot-cli sample application with CPC on Android Hosto The ot-cli sample application can now be used with CPC on an Android host. To build, download the Android NDK toolchain, define the environment variable "NDK" to point to the toolchain, and run the script/cmake-build-android script instead of script/cmake-build.1.3 New Radio Board SupportAdded in release 2.3.0.0Support has been added for the following radio boards:•BRD4196B - EFR32xG21B•BRD2704A - Sparkfun Thing Plus MGM240PImprovements 2 ImprovementsChanged in release 2.3.0.0•Support for “diag cw” and “diag stream”o diag cw start - Start transmitting continuous carrier waveo diag cw stop - Stop transmitting continuous carrier waveo diag stream start - Start transmitting a stream of characters.o diag stream stop - Stop transmitting a stream of characters.•Bootloader support for sample applicationso The bootloader_interface component has been added to the Thread sample apps. The component introduces support for bootloaders and also results in the creation of GBL files when building.•Reduction to code size of Certified OpenThread Librarieso The pre-built certification libraries no longer include JOINER functionality.Fixed Issues 3 Fixed IssuesFixed in release 2.3.0.01023725 Fixed an issue where detached MTDs on the Thread network hit an assert while re-attaching to the OTBR after the OTBR is rebooted.1079667 Fixed an issue where devices can no longer communicate after reporting transient out-of-buffers condition.1084368 Fixed failing HomeKit HCA test when using board 4186c and the DMP application.1095059 Added openthread 'diag stream' and 'diag cw' CLI commands. See Improvements section for additional details.1113046 Radio PAL now maintains max channel power table.1126570 Addressed a memory leak associated with PSA keys which occurs when otInstanceFinalise() is called without power cycling.1133240 Fixed a bug in setting link parameters in the meshcop forwarding layer.1139318 Request to Reduce Codesize of Certified OpenThread Library. See Improvements section for additional details. 1139449 Fixed an issue where devices stopped receiving during Tx storm.1142231 Radio SPINEL no longer asserts when no entries are available in source match table.Known Issues in the Current Release 4 Known Issues in the Current ReleaseIssues in bold were added since the previous release. If you have missed a release, recent release notes are available on https:///developers/thread in the Tech Docs tab.482915 495241 A known limitation with the UART driver can causecharacters to be lost on CLI input or output. This canhappen during particularly long critical sections thatmay disable interrupts, so it can be alleviated byrepeating the CLI or waiting long enough for statechanges.No known workaround754514 Double ping reply observed for OTBR ALOC address. No known workaround815275 Ability to modify the Radio CCA Modes at compile-time using a configuration option in Simplicity Studio is cur-rently not supported. Use the SL_OPENTHREAD_RADIO_CCA_MODE configuration option defined in openthread-core-efr32-config.h header file included with your project.1041112 OTBR / EFR32 RCP can miss forwarding packets froma CSL child if it configures an alternate channel for CSLcommunication.Due to this issue, OTBRs based on GSDK 4.2.0.0 arenot expected to pass Thread 1.2 certification unless thecustomer use cases demand a waiver to exclude alltests that require changing the primary channel. Avoid configuring alternate CSL channels until this issue is addressed.1094232 Intermittently, ot-ctl terminates after a factoryresetwhen using a CPCd connection.No known workaround1064242 OpenThread prefix commands sometimes fail to addprefix for OTBR over CPC.No known workaround1117447 Outgoing key index can be set to 0 under unknowncircumstances.No known workaround1132004 RCP can become unresponsive when receiving excessive beacon requests. This issue was seen with 3 devices sending beacons requests every 30 ms. Workaround is to reduce the number of beacon requesters and/or increase time between the requests.1143008 The OTBR can sometimes fail to transmit a CSL packet with the error "Handle transmit done failed:Abort". This could happen ifOPENTHREAD_CONFIG_MAC_CSL_REQUEST_AHEAD_US is set to low. SetOPENTHREAD_CONFIG_MAC_CSL_REQUEST_AHEAD_US to 5000.For the OTBR, you can either:1. Modify the value ofOPENTHREAD_CONFIG_MAC_CSL_REQUEST_AHEAD_US in ot-br-posix/third_party/openthread/repo/src/core/config/mac.hor2. Pass the value during setup as follows:sudo OTBR_OPTIONS="-DCMAKE_CXX_FLAGS='-DOPENTHREAD_CONFIG_MAC_CSL_REQUEST_AHEAD_ US=5000'" ./script/setup1148720 Intermittently, SED current draw is too high. No known workaroundDeprecated Items 5 Deprecated ItemsNone.Removed Items 6 Removed ItemsRemoved in release 2.3.0.0•The ot-remote-cli component has been removed. There is no replacement for this component because the functionality provided by the component is no longer required.•The Silicon Labs HomeKit extension is no longer included with this release.7 Multiprotocol Gateway and RCP7.1 New ItemsAdded in release 2.3.0.0Added a new application z3-light_ot-ftd_soc that demonstrates Zigbee and OpenThread Concurrent Multiprotocol functionality. It features a router on the Zigbee side and a Full Thread Device (FTD) on the OpenThread side. See the project description or app/framework/sce-narios/z3/z3-light_ot-ftd_soc/readme.html for details.First GA-quality release of CPC GPIO Expander module. The Co-Processor Communication (CPC) General Purpose Input/Output (GPIO) Expander is a software component designed to enable a Host device to utilize a Secondary device's GPIOs as if they were its own. With the CPC GPIO Expander, the Host device can seamlessly integrate with the Secondary device and make use of its GPIO capabilities. See https:///SiliconLabs/cpc-gpio-expander/README.md for documentation.Added antenna diversity and coex EZSP command support to Zigbeed.Added better assert reporting to Zigbeed.Added bt_host_empty application (option: -B for the run.sh script) to the multiprotocol docker container.Zigbeed now includes an implementation of emberGetRestoredEui64() which loads the CREATOR_STACK_RESTORED_EUI64 token from the host_token.nvm file.The multiprotocol container now sets the size of syslog to 100 MB by default. Users are able to change the size by modifying the "/etc/logrotate.d/rsyslog" and "/etc/rsyslog.d/50-default.conf" files and restarting the rsyslog service inside the container.7.2 ImprovementsChanged in release 2.3.0.0Reduced CPC Tx and Rx queue sizes to fit the DMP NCP on the MG13 family.Configured options on the multiprotocol RCP projects to provide ~3.3k in RAM savings, particularly for the MG1 part. This was accom-plished by•Reducing•The number of user CPC endpoints to 0•Tx CPC queue size to 15 from 20•Rx buffer count to 15•Disabling OpenThread RTT logsFor further savings, customers can look into reducing the Tx and Rx queue sizes further. Note that the downside to this change would be a reduction in message throughput due to added retries. Also, customers can look into reducing the NVM cache size based on need. As a last resort, customers may also choose to disable CPC security on both the RCP and the host. We do not recommend the last option.Changed zigbee_ble_event_handler to print scan responses from legacy advertisements in the DMPLight(Sed) app.The rcp-xxx-802154 apps now by default support 192 µsec turnaround time for non-enhanced acks while still using 256 µsec turnaround time for enhanced acks required by CSL.7.3 Fixed IssuesFixed in release 2.3.0.01078323 Resolved issue where Z3GatewayCPC asserts when there is a communication failure with the NCP during address table initialization. We will now try to reconnect to the NCP upon failure.1080517 Z3GatewayCPC now automatically handles a reset of the NCP (CPC secondary).1117789 Fixed an issue where modifying OPENTHREAD_CONFIG_PLATFORM_RADIO_SPINEL_RX_FRAME_BUFFER_SIZE caused a linker error when building Zigbeed.1118077 In the CMP RCP, Spinel messages were being dropped under heavy traffic load due to CPC not keeping up with the incoming packets. Fixed this by bundling all Spinel messages ready to be sent over CPC into one payload on the RCP and unbundling them on the host. This dramatically improves the efficiency of CPC so that it can keep up with the incoming radio traffic.1129821 Fixed null pointer dereference in Zigbeed in an out-of-buffer scenario while receiving packets.1139990 Fixed an assert in the OpenThread Spinel code that could be triggered when joining many Zigbee devices simultaneously.1144268 Fixed an issue where excessive radio traffic can cause the Zigbee-BLE NCP to get into a state where it continually executes the NCP and CPC initialization.1147517 Fixed an issue with Z3GatewayCPC on startup that could cause the reset handling of the secondary to not work correctly.7.4 Known Issues in the Current ReleaseIssues in bold were added since the previous release. If you have missed a release, recent release notes are available on https:///developers/gecko-software-development-kit.811732 Custom token support is not available when using Zigbeed. Support is planned in a future release.937562 Bluetoothctl ‘advertise on’ command fails with rcp-uart-802154-blehci app on Raspberry Pi OS 11.Use btmgmt app instead of bluetoothctl.1074205 The CMP RCP does not support two networks on the same PAN id. Use different PAN ids for each network. Support is planned in a future release.1122723 In a busy environment the CLI can become unresponsive in the z3-light_ot-ftd_soc app. This app is released as experimental quality and the issue will be fixed in a future release.1124140 z3-light_ot-ftd_soc sample app is not able to form theZigbee network if the OT network is up already.Start the Zigbee network first and the OT network after.1129032 Experimental concurrent listening feature on xG24 de-vices is disabled in this release.Support is planned in a future release.1143857 Antenna Diversity is not available on the CMP RCP forxG21 and xG24 parts, since the antenna diversityhardware is used for concurrent listening.Intended behavior.7.5 Deprecated Items None7.6 Removed Items None8 Using This ReleaseThis release contains the following•Silicon Labs OpenThread stack•Silicon Labs OpenThread sample applications•Silicon Labs OpenThread border routerFor more information about the OpenThread SDK see QSG170: Silicon Labs OpenThread QuickStart Guide. If you are new to Thread see UG103.11: Thread Fundamentals.8.1 Installation and UseThe OpenThread SDK is part of the Gecko SDK (GSDK), the suite of Silicon Labs SDKs. To quickly get started with OpenThread and the GSDK, start by installing Simplicity Studio 5, which will set up your development environment and walk you through GSDK installation. Simplicity Studio 5 includes everything needed for IoT product development with Silicon Labs devices, including a resource and project launcher, software configuration tools, full IDE with GNU toolchain, and analysis tools. Installation instructions are provided in the online Simplicity Studio 5 User’s Guide.Alternatively, Gecko SDK may be installed manually by downloading or cloning the latest from GitHub. See https:///Sili-conLabs/gecko_sdk for more information.The GSDK default installation location has changed beginning with Simplicity Studio 5.3.•Windows: C:\Users\<NAME>\SimplicityStudio\SDKs\gecko_sdk•MacOS: /Users/<NAME>/SimplicityStudio/SDKs/gecko_sdkDocumentation specific to the SDK version is installed with the SDK. API references and other information about this release are available on https:///openthread/2.1/.8.2 OpenThread GitHub RepositoryThe Silicon Labs OpenThread SDK includes all changes from the OpenThread GitHub repo (https:///openthread/openthread) up to and including commit dae3ff2c5. An enhanced version of the OpenThread repo can be found in the following Simplicity Studio 5 GSDK location:<GSDK Installation Location>\util\third_party\openthread8.3 OpenThread Border Router GitHub RepositoryThe Silicon Labs OpenThread SDK includes all changes from the OpenThread border router GitHub repo (https:///openthread/ot-br-posix) up to and including commit de7cd7b20. An enhanced version of the OpenThread border router repo can be found in the following Simplicity Studio 5 GSDK location:<GSDK Installation Location>\util\third_party\ot-br-posix8.4 Using the Border RouterFor ease of use, Silicon Labs recommends the use of a Docker container for your OpenThread border router. Refer to AN1256: Using the Silicon Labs RCP with the OpenThread Border Router for details on how to set up the correct version of OpenThread border router Docker container. It is available at https:///r/siliconlabsinc/openthread-border-router.If you are manually installing a border router, using the copies provided with the Silicon Labs OpenThread SDK, refer to AN1256: Using the Silicon Labs RCP with the OpenThread Border Router for more details.Although updating the border router environment to a later GitHub version is supported on the OpenThread website, it may make the border router incompatible with the OpenThread RCP stack in the SDK.8.5 NCP/RCP SupportThe OpenThread NCP support is included with OpenThread SDK but any use of this support should be considered experimental. The OpenThread RCP is fully implemented and supported.8.6 Security InformationSecure Vault IntegrationWhen deployed to Secure Vault High devices, sensitive keys are protected using the Secure Vault Key Management functionality. The following table shows the protected keys and their storage protection characteristics.Thread Master Key Exportable Must be exportable to form the TLVsPSKc Exportable Must be exportable to form the TLVsKey Encryption Key Exportable Must be exportable to form the TLVsMLE Key Non-ExportableTemporary MLE Key Non-ExportableMAC Previous Key Non-ExportableMAC Current Key Non-ExportableMAC Next Key Non-ExportableWrapped keys that are marked as “Non-Exportable” can be used but cannot be viewed or shared at runtime.Wrapped keys that are marked as “Exportable” can be used or shared at runtime but remain encrypted while stored in flash.For more information on Secure Vault Key Management functionality, see AN1271: Secure Key Storage.Security AdvisoriesTo subscribe to Security Advisories, log in to the Silicon Labs customer portal, then select Account Home. Click HOME to go to the portal home page and then click the Manage Notifications tile. Make sure that ‘Software/Security Advisory Notices & Product Change Notices (PCNs)’ is checked, and that you are subscribed at minimum for your platform and protocol. Click Save to save any changes.8.7 SupportDevelopment Kit customers are eligible for training and technical support. Use the Silicon Laboratories Thread web page to obtain infor-mation about all Silicon Labs OpenThread products and services, and to sign up for product support.You can contact Silicon Laboratories support at /support.Silicon Laboratories Inc.400 West Cesar Chavez Austin, TX 78701USA IoT Portfolio /IoT SW/HW /simplicity Quality /quality Support & Community /communityDisclaimerSilicon Labs intends to provide customers with the latest, accurate, and in-depth documentation of all peripherals and modules available for system and software imple-menters using or intending to use the Silicon Labs products. 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