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MMDT4146-7-F;中文规格书,Datasheet资料

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MMDT4146 Document number: DS30162 Rev. 11 - 2 1 of 5

www.diodes.com January 2009

© Diodes Incorporated

MMDT4146 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Complementary Pair One 4124-Type NPN One 4126-Type PNP • Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 3) • "Green" Device (Note 4 and 5) Mechanical Data • Case: SOT-363 • Case Material: Molded Plastic, “Green” Molding Compound, Note 5. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.006 grams (approximate)

Maximum Ratings, NPN 4124 Section @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5.0 V Collector Current – Continuous (Note 1)IC 200 mA

Maximum Ratings, PNP 4126 Section @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit Collector-Base Voltage VCBO -25 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -4 V Collector Current - Continuous (Note 1)IC -200 mA

Thermal Characteristics – Total Device

Characteristic Symbol Value Unit Power Dissipation (Note 1, 2)PD 200 mW Thermal Resistance, Junction to Ambient (Note 1)RθJA 625 °C/W

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

Top ViewDevice Schematic

C2B1E1

E2B2C1

E1, B1, C1 = PNP4126 Section E2, B2, C2 = NPN4124 Section

http://oneic.com/

Please click here to visit our online spice models database. MMDT4146 Document number: DS30162 Rev. 11 - 2 2 of 5

www.diodes.com January 2009

© Diodes Incorporated

MMDT4146 Electrical Characteristics, NPN 4124 Section @TA = 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage V(BR)CBO30 ⎯ V IC = 10μA, IE = 0

Collector-Emitter Breakdown Voltage V(BR)CEO25 ⎯ V IC = 1.0mA, IB = 0

Emitter-Base Breakdown Voltage V(BR)EBO5.0 ⎯ V IE = 10μA, IC = 0

Collector Cutoff Current ICBO ⎯ 50 nA VCB = 20V, IE = 0V

Emitter Cutoff Current IEBO ⎯ 50 nA VEB = 3.0V, IC = 0V

ON CHARACTERISTICS (Note 6)

DC Current Gain hFE

120

60 360

⎯ ⎯ IC = 2.0mA, VCE = 1.0V

IC = 50mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.30 V IC = 50mA, IB = 5.0mA

Base-Emitter Saturation Voltage VBE(SAT) ⎯ 0.95 V IC = 50mA, IB = 5.0mA

SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0

Input Capacitance Cibo ⎯ 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0

Small Signal Current Gain hfe 120 480 ⎯

VCE = 1.0V, IC = 2.0mA,

f = 1.0kHz

Current Gain-Bandwidth Product fT 300 ⎯ MHz VCE = 20V, IC = 10mA, f = 100MHz

Noise Figure NF ⎯ 5.0 dB VCE = 5.0V, IC = 100μA, RS = 1.0kΩ, f = 1.0kHz

Electrical Characteristics, PNP 4126 Section @TA = 25°C unless otherwise specified

Characteristic SymbolMin Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage V(BR)CBO-25 ⎯ V IC = -10μA, IE = 0

Collector-Emitter Breakdown Voltage V(BR)CEO-25 ⎯ V IC = -1.0mA, IB = 0

Emitter-Base Breakdown Voltage V(BR)EBO-4.0 ⎯ V IE = -10μA, IC = 0

Collector Cutoff Current ICBO ⎯ -50 nA VCB = -20V, IE = 0V

Emitter Cutoff Current IEBO ⎯ -50 nA VEB = -3.0V, IC = 0V

ON CHARACTERISTICS (Note 6)

DC Current Gain hFE

120

60 360

⎯ ⎯ IC = -2.0mA, VCE = -1.0V

IC = -50mA, VCE = -1.0V Collector-Emitter Saturation Voltage VCE(SAT)⎯ -0.40 V IC = -50mA, IB = -5.0mA

Base-Emitter Saturation Voltage VBE(SAT)⎯ -0.95 V IC = -50mA, IB = -5.0mA

SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0

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OP07中文资料_数据手册_参数

OP07中文资料_数据手册_参数

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绝对大额定值超过工作自由空气温度范围（除非另有说明） （1） MIN MAX单元 V CC + （2） 0 22电源电压 V V CC- （2） -22 0 差 分输入电压 （3） ±30 V V 我 输入电压范围（任一输入） （4） ±22 V 输出短路持续时间 （5）无限 T J操作虚拟结温度 150 C引线温 度距离壳体1.6毫米（1/16英寸），持续10秒 260 C （1）强调绝对大额定值以外列出的可能会导致设备永久性损坏.这些是压力评级只 有在这些或任何其他超出建议的操作条件下的条件下才能操作设备不暗示条件.暴露在绝对大额定条件下可能会影响器件的可靠性. （2） 除非另有说明，所有的电压值都是相对于V CC + 和V CC- 之间的中点 . （3）差分电压相对于IN处于IN + - . （4）输入电压的 大小决不能超过电源电压的大小或15 V，取其小者. （5）输出可能短路到地或任何一个电源. 7.2处理评级参数定义 MIN MAX单元 T STG存储温度范围 -65 150 C人体模型（HBM），根据ANSI / ESDA / JEDEC JS-001，全部 0 1000 （1）静电的 V （ESD） V卸货带电器 件型号（CDM），根据JEDEC规范JESD22- 0 1000 C101，所有引脚 （2） （1） JEDEC文件JEP??155指出，500V HBM允许采用标准 ESD控制过程进行安全制造. （2） JEDEC文件JEP??157指出，250V CDM允许使用标准ESD控制过程进行安全制造. 7.3推荐的操作条件 超过工作自由空气温度范围（除非另有说明） MIN MAX单元 V CC + 3 18电源电压 V CC- -3 -18 V V IC共模输入电压 V CC± =±15 V -13 13 T A.操作自由空气温度 0 70 C 7.4热量信息 温度计 （1） D P单元 RθJA结到环境热阻 97 85 °C / W （1）有关传统和新型散热指 标的更多信息 OP07Y精密运算放大器 SLOS099B - 1983年10月 - 修订于1996年8月五邮政信箱655303 ? 达拉斯，得克萨斯州75265 经营特色，V CC ±= ± 15 V，T A = 25°C参数测试 OP07C OP07D单元参数条件? MIN TYP MAX MIN TYP MAX单元 F = 10HZ 10.5 10.5 √ VN等效输入噪 声电压 F = 100HZ 10.2 10.3内华达州/ √HZ的 F = 1KHZ 9.8 9.8 VN（PP）峰峰值等效输入噪声电压 F = 0.1HZ至10HZ 0.38 0.38 μV F = 10HZ 0.35 0.35 √在等效输入噪声电流 F = 100HZ 0.15 0.15 PA / √HZ的 F = 1KHZ 0.13 0.13 IN（PP）峰峰值等效输入噪声电流 F = 0.1HZ 至10HZ 15 15 PA的 SR摆率 RL≥2KΩ 0.3 0.3 V /微秒 ?除非另有说明，所有特性均在开环条件下以零共模输入电压进行测量. 电气特 性，V CC ±= ± 15 V，T A = 25°C（除非另有说明）参数测试条件? OP07Y单元参数测试条件? MIN TYP MAX单元 VIO输入失调电 压 RS = 50Ω 60 150 μV输入失调电压的长期漂移见注6 0.5 μV/月偏移调整范围 RS = 20KΩ，见图1 ±4毫伏 IIO输入失调电流 0.8 6 NA 的 IIB输入偏置电流 ±2 ±12 NA的 VICR共模输入电压范围 ±13 ±14 V RL≤10KΩ ±12 ±13 VOM峰值输出电压 RL≤2KΩ ±11.5 ±12.8 V RL≤1KΩ ±12 AVD大信号L≤500KΩ 400 AVD大信号差分电压放大 VO = ±10 V， RL = 2KΩ 120 400 B1单位增益带宽 0.4 0.6兆赫 RI输入电阻 7 31中号 Ω CMRR共模输入电阻 VIC =±13 V， RS = 50Ω 94 110 D B KSVS电源电压抑制比（ ΔVCC/ΔVIO） VCC ±=±3 V至±18 V， RS = 50Ω 7 32 μV/ V PD功
DDC114YU-7-F中文资料

DDC114YU-7-F中文资料


Date Code Key Year Code
Month Code
NXX YM
NXX YM
NXX = Product Type Marking Code See Sheet 1 Diagrams
YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September
3.6
0.88
¾
¾
0.5 mA VCC = 50V, VI = 0V
56
VO = 5V, IO = 5mA
68
VO = 5V, IO = 5mA
68
¾
¾ ¾ VO = 5V, IO = 10mA
80
VO = 5V, IO = 10mA
30
VO = 5V, IO = 5mA
-30
¾ +30 %
¾
-20
Output Current
DDC124EU DDC144EU DDC114YU DDC123JU DDC114EU DDC113TU DDC143TU DDC114TU
Output Current
All
Power Dissipation (Total)
Thermal Resistance, Junction to Ambient Air (Note 1)
J
· Terminals: Solderable per MIL-STD-202, Method 208
· Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
· Terminal Connections: See Diagram
SD4933;中文规格书,Datasheet资料

SD4933;中文规格书,Datasheet资料

August 2011Doc ID 15487 Rev 61/19SD4933HF/VHF/UHF RF power N-channel MOSFETFeatures■Improved ruggedness V (BR)DSS > 200 V ■Excellent thermal stability■20:1 all phases load mismatch capability ■P OUT = 300 W min. with 24 dB gain @ 30 MHz ■In compliance with the 2002/95/EEC European directiveDescriptionThe SD4933 is an N-channel MOS field-effect RF power transistor. It is intended for use in 50 V ISM applications up to 100 MHz.Table 1.Device summaryOrder code Marking Base qty.Package Packaging SD4933SD4933(1)25 pcsM177Plastic tray1.For more details please refer to Chapter 9: Marking, packing and shipping specifications ..Contents SD4933Contents1Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31.1Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31.2Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.2Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65Typical performance (30 MHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95.1Test circuit (30 MHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6Circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7VGS/GFS sorts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 8Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 9Marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 17 10Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182/19 Doc ID 15487 Rev 6SD4933Electrical dataDoc ID 15487 Rev 63/191 Electrical data1.1 Maximum ratings(T CASE = 25 °C) 1.2 Thermal dataTable 2.Absolute maximum ratingsSymbol ParameterValue Unit V (BR)DSS Drain source voltage200V V DGR Drain-gate voltage (R GS = 1 M Ω)200V V GS Gate-source voltage ±20V I D Drain current 40A P DISS Power dissipation648W E AS Avalanche energySingle pulse (I D = 56 A - 800 µH coil)1200mJ T J Max. operating junction temperature 200°C T STGStorage temperature-65 to +150°CTable 3.Thermal dataSymbol ParameterValue Unit R thJCJunction - case thermal resistance0.27°C/WElectrical characteristics SD49334/19 Doc ID 15487 Rev 62 Electrical characteristicsT CASE = +25 o C2.1 Static2.2 DynamicTable 4.StaticSymbolTest conditions Min Typ MaxUnit V (BR)DSS V GS = 0 V I DS = 100 mA 200240V I DSS V GS = 0 V V DS = 100 V 2mA I GSS V GS = 20 V V DS = 0 V500nA V TH I D = 250 mA 1.52.5 4.0V V DS(ON)V GS = 10 V I D = 20 A3.54.0V G FS V DS = 10 V I D = 5 A 58S C ISS V GS = 0 V V DS = 50 V f = 1 MHz 1000pF C OSS V GS = 0 V V DS = 50 V f = 1 MHz 400pF C RSSV GS = 0 VV DS = 50 Vf = 1 MHz16pFTable 5.DynamicSymbol Test conditions Min TypMax Unit P OUT V DD = 50 V I DQ = 250 mAf = 30 MHz300-W G PS V DD = 50 V I DQ = 250 mA P OUT = 300 W f = 30 MHz 2024-dB h DV DD = 50 VI DQ = 250 mA P OUT = 300 W f = 30 MHz5058-%Loadmismatch V DD = 50 V I DQ = 250 mA P OUT = 300 W f = 30 MHz All phase angles10:120:1-VSWRSD4933Impedance dataDoc ID 15487 Rev 65/193 Impedance dataTable 6.Impedance valuesZ in Z dl 1.6 - j 5.03.3 + j 1.0Typical performance SD49336/19 Doc ID 15487 Rev 64 Typical performanceFigure 3.Capacitance vs. drain voltageFigure 4.Drain current vs. drain-sourceFigure 5.Drain current vs. drain-sourceSD4933Typical performanceDoc ID 15487 Rev 67/19Typical performance SD49338/19 Doc ID 15487 Rev 65 Typical performance (30 MHz)Figure 8.Gain and efficiency vs. outputFigure 9.Output power vs. input powerpower_Vdd = 50 V, Idq = 250 mA,Doc ID 15487 Rev 69/195.1 Test circuit (30 MHz)Table 7.Transmission line dimensionsDim.Inch mmA0.53213.51B0.250 6.35C0.181 4.59D0.3839.37E0.3518.91F0.63316.08G0.47712.12H0.43811.12J0.200 5.08K0.164 4.16L0.174 4.42M0.81720.75N0.3508.89P0.77919.79R0.63916.23 10/19 Doc ID 15487 Rev 6分销商库存信息: STMSD4933。

DTC144EKAT146;DTC144EUAT106;DTC144EETL;DTC144EMT2L;中文规格书,Datasheet资料

DTC144EKAT146;DTC144EUAT106;DTC144EETL;DTC144EMT2L;中文规格书,Datasheet资料


Dimension in mm/inches
© 2012 ROHM Co., Ltd. All rights reserved.
e1
5/10
2012.04 - Rev.A
/
DTC144E series
lDimensions (Unit : mm)
/
DTC144E series
lElectrical characteristic curves(Ta = 25°C)
Data Sheet
Fig.5 Output voltage vs. output current
OUTPUT VOLTAGE : VO(on) [V]
2/10
2012.04 - Rev.A
/
DTC144E series
lElectrical characteristic curves(Ta = 25°C)
Data Sheet
Fig.1 Input voltage vs. output current (ON characteristics)
D b1 c
Data Sheet
VMT3
A
L
e
b
H
E
x
S A b3
l1
Lp
A
A1
S
l1
b2
e
Patterm of terminal position areas
DIM A A1 b b1 c D E e HE L Lp x DIM e1 b2 b3 l1 MILIMETERS MIN MAX 0.45 0.55 0.00 0.10 0.17 0.27 0.27 0.37 0.08 0.18 1.10 1.30 0.70 0.90 0.40 1.10 1.30 0.10 0.30 0.20 0.40 0.10 MILIMETERS MIN MAX 0.80 0.37 0.47 0.50 INCHES MIN 0.018 0 0.007 0.011 0.003 0.043 0.028 0.02 0.043 0.004 0.008 INCHES MIN 0.03 0.015 0.019 0.02 MAX 0.051 0.004 MAX 0.022 0.004 0.011 0.015 0.007 0.051 0.035