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2SC2965中文资料

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2965 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A PC Collector power dissipation TC=25℃ 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3) and symbol 元器件交易网www.cecb2b.comInchange Semiconductor Product Specification

2Silicon NPN Power Transistors 2SC2965 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAXUNITV(BR)CEO Collector-emitter breakdown voltageIC=5mA ; RBE=∞ 450 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 600 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=10A; IB=2A 1.5 V VBE(sat) Base-emitter saturation voltage IC=10A; IB=2A 1.5 V ICBO Collector cut-off current VCB=500V ;IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=10A ; VCE=5V 7 20 fT Transition frequency IC=2A ; VCE=10V 28 MHz COB Collector output capacitance IE=0 ; VCB=10V,f=1MHz 230 pF 元器件交易网www.cecb2b.comInchange Semiconductor Product Specification

3

Silicon NPN Power Transistors 2SC2965 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 元器件交易网www.cecb2b.com

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2SK2586中文资料

2SK2586中文资料

2SK2586Silicon N-Channel MOS FET

ADE-208-358 C4th. Edition

Application

High speed power switching

Features

• Low on-resistance

• RDS(on) = 7 m typ.

• High speed switching

• 4 V gate drive device can be driven from 5 V source

Outline

123TO-3P

1. Gate2. Drain (Flange)3. SourceD

G

S2SK2586

2Absolute Maximum Ratings (Ta = 25°C)

ItemSymbolRatingsUnit

Drain to source voltageVDSS60V

Gate to source voltageVGSS±20V

Drain currentID*260A

Drain peak currentID(pulse)*1240A

Body to drain diode reverse drain currentIDR*260A

Avalanche currentIAP*345A

Avalanche energyEAR*3174mJ

Channel dissipationPch*2125W

Channel temperatureTch150°C

Storage temperatureTstg–55 to +150°C

Notes:1.PW ≤ 10 µs, duty cycle ≤ 1 %2.Value at Tc = 25°C3.Value at Tch = 25°C, Rg ≥ 50 Ω2SK2586

3Electrical Characteristics (Ta = 25°C)

ItemSymbolMinTypMaxUnitTest Conditions

Drain to source breakdownvoltageV(BR)DSS60——VID = 10 mA, VGS = 0

L295中文资料

L295中文资料

L295

DUAL SWITCH-MODE SOLENOID DRIVERPRELIMINARY DATA

HIGH CURRENT CAPABILITY (up to 2.5A perchannel)

HIGH VOLTAGE OPERATION (up to 46V forpower stage)HIGH EFFICIENCY SWITCHMODE OPERATIONREGULATED OUTPUT CURRENT (adjustable)FEW EXTERNAL COMPONENTSSEPARATE LOGIC SUPPLY

THERMAL PROTECTION

DESCRIPTION

The L295 is a monolithic integrated circuit in a 15 -

lead Multiwatt ® package; it incorporates all the

functions for direct interfacing between digital cir-

cuitry and inductive loads. The L295 is designed to

accept standard microprocessor logic levels at the

inputs and can drive 2 solenoids. The output current

is completely controlled by means of a switch-

March 1993SymbolParameterValueUnit

VsSupply voltage50V

VssLogic supply voltage12V

VEN, ViEnable and input voltage7V

VrefReference voltage7V

IoPeak output current (each channel)

HCMS-2913资料

HCMS-2913资料

High Performance CMOS 5 x 7

Alphanumeric Displays

Technical Data

HCMS-29xx Series

Features

• Easy to Use

• Interfaces Directly with

Microprocessors

• 0.15" Character Height in 4,

8, and 16 (2x8) Character

Packages

• 0.20" Character Height in 4

and 8 Character Packages

• Rugged X- and Y-Stackable

Package

• Serial Input

• Convenient Brightness

Controls

• Wave Solderable

• Offered in Five Colors

• Low Power CMOS

Technology

• TTL CompatibleApplications

• Telecommunications

Equipment

• Portable Data Entry Devices

• Computer Peripherals

• Medical Equipment

• Test Equipment

• Business Machines

• Avionics

• Industrial Controls

Device Selection GuideAlGaAs

HEROrangeYellowGreenPackage

DescriptionHCMS-HCMS-HCMS-HCMS-HCMS-Drawing

1 x 4 0.15" Character29052902290429012903A

1 x 8 0.15" Character29152912291429112913B

2 x 8 0.15" Character29252922292429212923C

2SC2878资料

2SC2878资料

2SC2878

2007-11-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC2878 For Muting and Switching Applications • High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 25 V Collector current IC 300 mA Base current IB 60 mA Collector power dissipation PC 400 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C)