2SD1270中文资料

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1Power Transistors

2SD1270

Silicon NPN epitaxial planar type

For power switching

Complementary to 2SB945

sFeatures

qLow collector to emitter saturation voltage VCE(sat)

qSatisfactory linearity of foward current transfer ratio hFE

qLarge collector current IC

qFull-pack package which can be installed to the heat sink with

one screw

sAbsolute Maximum Ratings (TC=25˚C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power

dissipation

Junction temperature

Storage temperatureSymbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

TstgRatings

130

80

7

10

5

40

2

150

–55 to +150Unit

V

V

V

A

A

W

˚C

˚C

sElectrical Characteristics (TC=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall timeSymbol

ICBO

IEBO

VCEO

hFE1

hFE2*

VCE(sat)

VBE(sat)

fT

ton

tstg

tfConditions

VCB = 100V, IE = 0

VEB = 5V, IC = 0

IC = 10mA, IB = 0

VCE = 2V, IC = 0.1A

VCE = 2V, IC = 2A

IC = 4A, IB = 0.2A

IC = 4A, IB = 0.2A

VCE = 10V, IC = 0.5A, f = 10MHz

IC = 2A, IB1 = 0.2A, IB2 = – 0.2A,

VCC = 50Vmin

80

45

60typ

30

0.5

1.5

0.15max

10

50

260

0.5

1.5Unit

µA

µA

V

V

V

MHz

µs

µs

µs

*hFE2 Rank classification

RankRQP

hFE260 to 12090 to 180130 to 260TC=25°C

Ta=25°CUnit: mm

1:Base

2:Collector

3:Emitter

TO–220 Full Pack Package(a)10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.30.7±0.1

14.0±0.5

Solder Dip4.0

0.5+0.2–0.11.4±0.11.3±0.2

0.8±0.1

2.54±0.25

5.08±0.52132.7±0.24.2±0.2

4.2±0.2

φ3.1±0.1

Note: Ordering can be made by the common rank (PQ rank hFE = 90 to 260) in the rank classification.元器件交易网www.cecb2b.com2Power Transistors2SD1270

PC—TaIC—VCEVCE(sat)—IC

VBE(sat)—IChFE—ICfT—IC

Cob—VCBton, tstg, tf — ICArea of safe operation (ASO)016040120801402010060050

40

30

20

10(1) TC=Ta(2) With a 100 × 100 × 2mmAl heat sink(3) With a 50 × 50 × 2mmAl heat sink(4) Without heat sink(PC=2W)(1)

(2)

(3)(4)

Ambient temperature Ta (˚C)Collector power dissipation PC (W)

065413206

5

4

3

2

1IB=100mA

70mA

50mA

40mA

30mA

20mA

10mATC=25˚C

Collector to emitter voltage VCE (V)Collector current IC (A)

0.010.11100.030.330.010.030.10.3131030100IC/IB=20

TC=100˚C

25˚C

–25˚C

Collector current IC (A)Collector to emitter saturation voltage VCE(sat) (V)

0.010.11100.030.330.010.030.10.3131030100IC/IB=20

TC=–25˚C

25˚C100˚C

Collector current IC (A)Base to emitter saturation voltage VBE(sat) (V)

0.010.11100.030.331310301003001000300010000VCE=2V

TC=100˚C25˚C–25˚C

Collector current IC (A)Forward current transfer ratio hFE

0.010.11100.030.331310301003001000300010000VCE=10Vf=10MHzTC=25˚C

Collector current IC (A)Transition frequency fT (MHz)

0.11101000.33301310301003001000300010000IE=0f=1MHzTC=25˚C

Collector to base voltage VCB (V)Collector output capacitance Cob (pF)

0541320.010.030.10.3131030100Pulsed tw=1msDuty cycle=1%IC/IB=10 (IB1=–IB2)VCC=50VTC=25˚C

tstg

tfton

Collector current IC (A)Switching time ton,tstg,tf (µs)

11010010003303000.010.030.10.3131030100Non repetitive pulseTC=25˚C

ICPICt=0.5ms

10ms

1ms

DC

Collector to emitter voltage VCE (V)Collector current IC (A)元器件交易网www.cecb2b.com3Power Transistors2SD1270

Rth(t)—t

10–41010–310–110–2110310210410–210–1110103

102(1) Without heat sink(2) With a 100 × 100 × 2mm Al heat sink

(1)

(2)

Time t (s)Thermal resistance Rth(t) (˚C/W)元器件交易网www.cecb2b.com