2SD1270中文资料
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1Power Transistors
2SD1270
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB945
sFeatures
qLow collector to emitter saturation voltage VCE(sat)
qSatisfactory linearity of foward current transfer ratio hFE
qLarge collector current IC
qFull-pack package which can be installed to the heat sink with
one screw
sAbsolute Maximum Ratings (TC=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperatureSymbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
TstgRatings
130
80
7
10
5
40
2
150
–55 to +150Unit
V
V
V
A
A
W
˚C
˚C
sElectrical Characteristics (TC=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall timeSymbol
ICBO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tfConditions
VCB = 100V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 2A
IC = 4A, IB = 0.2A
IC = 4A, IB = 0.2A
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 2A, IB1 = 0.2A, IB2 = – 0.2A,
VCC = 50Vmin
80
45
60typ
30
0.5
1.5
0.15max
10
50
260
0.5
1.5Unit
µA
µA
V
V
V
MHz
µs
µs
µs
*hFE2 Rank classification
RankRQP
hFE260 to 12090 to 180130 to 260TC=25°C
Ta=25°CUnit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.30.7±0.1
14.0±0.5
Solder Dip4.0
0.5+0.2–0.11.4±0.11.3±0.2
0.8±0.1
2.54±0.25
5.08±0.52132.7±0.24.2±0.2
4.2±0.2
φ3.1±0.1
Note: Ordering can be made by the common rank (PQ rank hFE = 90 to 260) in the rank classification.元器件交易网www.cecb2b.com2Power Transistors2SD1270
PC—TaIC—VCEVCE(sat)—IC
VBE(sat)—IChFE—ICfT—IC
Cob—VCBton, tstg, tf — ICArea of safe operation (ASO)016040120801402010060050
40
30
20
10(1) TC=Ta(2) With a 100 × 100 × 2mmAl heat sink(3) With a 50 × 50 × 2mmAl heat sink(4) Without heat sink(PC=2W)(1)
(2)
(3)(4)
Ambient temperature Ta (˚C)Collector power dissipation PC (W)
065413206
5
4
3
2
1IB=100mA
70mA
50mA
40mA
30mA
20mA
10mATC=25˚C
Collector to emitter voltage VCE (V)Collector current IC (A)
0.010.11100.030.330.010.030.10.3131030100IC/IB=20
TC=100˚C
25˚C
–25˚C
Collector current IC (A)Collector to emitter saturation voltage VCE(sat) (V)
0.010.11100.030.330.010.030.10.3131030100IC/IB=20
TC=–25˚C
25˚C100˚C
Collector current IC (A)Base to emitter saturation voltage VBE(sat) (V)
0.010.11100.030.331310301003001000300010000VCE=2V
TC=100˚C25˚C–25˚C
Collector current IC (A)Forward current transfer ratio hFE
0.010.11100.030.331310301003001000300010000VCE=10Vf=10MHzTC=25˚C
Collector current IC (A)Transition frequency fT (MHz)
0.11101000.33301310301003001000300010000IE=0f=1MHzTC=25˚C
Collector to base voltage VCB (V)Collector output capacitance Cob (pF)
0541320.010.030.10.3131030100Pulsed tw=1msDuty cycle=1%IC/IB=10 (IB1=–IB2)VCC=50VTC=25˚C
tstg
tfton
Collector current IC (A)Switching time ton,tstg,tf (µs)
11010010003303000.010.030.10.3131030100Non repetitive pulseTC=25˚C
ICPICt=0.5ms
10ms
1ms
DC
Collector to emitter voltage VCE (V)Collector current IC (A)元器件交易网www.cecb2b.com3Power Transistors2SD1270
Rth(t)—t
10–41010–310–110–2110310210410–210–1110103
102(1) Without heat sink(2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
Time t (s)Thermal resistance Rth(t) (˚C/W)元器件交易网www.cecb2b.com