Pauli-limited upper critical field in dirty d-wave superconductors

Chap 11、Semiconductors11.1 (a) For a semiconductor, show that np product obtained fromEq.(11.27) is proportional to exp(-βE g ) and thus is independent of the position of the chemical potential μ in the bandgap.Eq.(11.27):(b) The law of mass action in semiconductors for reaction creatingpairs of electrons and holes [e.g., Eq.(11.28)] has the form n(T)P(T)∝exp(-βE g ). Explain the significance of this law. (Hint: The law of mass action is described in Section 4.6)Eq.(11.28): (c) Evaluate the np product at T=300K for Si with E g =1.11ev andm eds ﹡=1.05m and m hds ﹡=0.58m.11.2 Using Eq.(11.30) and m eds ﹡=1.05m and m hds ﹡=0.58m for Si,calculate the change in the position of the chemical potential µ in the energy gap of intrinsic Si between T=0 and 300K.Eq.(11.30): 11.3 Calculate the values of N c and N v as defined in Eq.(11.27) for Siat T=300K. The appropriate of density-of-states effective masses for Si are m eds ﹡=1.05m and m hds ﹡=0.58m.11.4 Consider a semiconductor with a bulk energy gap E g =1.5ev andgE v c i i e T N T N T p T n β-=)()()()()()(2/32)()2(2)()(μβμβπ----*===c c E c E B eds i e T N e T k T n T n m )()(2/32)()2(2)()(v v E v E B h ds i e T N e T k T p T p m ----*===μβμβπ **+=eds hdsB g m m T k E T ln 432)(μwith m e﹡=m h﹡=0.1m. Calculate the increase in the energy gap ofthis semiconductor when it is incorporated into the followingstructures:(a) A quantum well (d=2) with L x=10nm.(b) A quantum wire (d=1) with L x=L y=10nm(c) A quantum dot (d=0) with L x=L y=L z=10nm11.5 A Hall effect measurement is carried out on a rectangular barof a semiconductor with dimensions L x=0.04m (the directionof current flow ) and L y=L z=0.002m. When a current I x=5mAflows in the +x direction and a magnetic field B z=0.2T isapplied in the +z direction, the following voltages aremeasured: V x=6V and V y=+0.3mV (i.e., increasing in the +ydirection). Determine the following properties of thesemiconductor bar from these data :(a) The sign of the dominant charge carriers.(b) The concentration of the dominant charge carriers.(c) The electrical conductivity σ.(d) The mobility µ of the dominant charge carriers.11.6Using Eq.(11.59), estimate the increase △n in the electronconcentration in an n-type semiconductor due to the uniformabsorption of light with α=105m-1, I0=1W/m2, and hω=1e V, aquantum efficiency η=1, and a minority-carrier lifetime ηp=10-3s.Eq.(11.59): 11.7 Using the definition of the Hall mobility µH =︱ζR H ︱and theexpression for R H for an intrinsic semiconductor given in Eq.(11.49), show that µH =︱µh -µe ︱.Eq.(11.49): 11.8 Consider the structural transformation of a binary crystal ABfrom the hexagonal wurtzite crystal structure to the cubic zincblende crystal structure in which the density of the atoms remains constant. Find the lattice constant of the resulting cubic crystal if the lattice constants of the initial wurtzite crystal are a =0.3400nm and c =0.5552nm.11.11 List all of the local tetrahedral bonding units, A-B 4, which arepresent in the ternary semiconducting compounds Cu 2SiTe 3, Cu 3PS 4, and CuSi 2P 3. Note that each tetrahedron must contain an average of four bonding electrons per atom.11.13 Derive the expression for the shift △E of the electron energybands from one side of a p-n junction to the other under zero bias as given in Eq.(11.93). Calculate the magnitdde of the built-in electric potential V B =△E/e for Si at T=300K for N d =N a =2×1024m -3. Using these same parameters, calculate the depletion width d and the maximum electric field Q/∈A for a Si p-n junction at T=300 K.ωτηατω pp L I G p n 0)(==∆=∆)(e h eh H ne R μμμμ+-=Eq.(11.93): .Chap 12、Metals and Alloys 12.1 Referring to Section 12.5, show that the condition for the tangencyof the Fermi sphere to the Brillouin zone boundary for the FCC lattice is N =1.36.12.2 Derive Eq.:12.3 Derive Eq.:Chap 13、Ceramics13.1 For the silicon oxynitride compound Si 2N 2O, assume that Si, N,and O atoms have their usual valences (4, 3, and 2) and that the N and O atoms do not form covalent bonds with each other. (a) Given a local bonding unit Si-N x O y for Si with x+y =4,determine x (and y ) for this crystal structure.(b) What are the local bonding units for N and O?13.2 For the Si x N y O z ternary phase diagram, locate the followingcompounds :SiO 2, Si 3N 4, Si 2N 2O, and Si 3N 2O 3.13.3 Find the average number of bridging oxygens, b, and nonbridgingoxygens, n, for the following glasses:(a)CaO•SiO 2, and(b) soda-lime(i.e., 2CaO•3Na 2O•15SiO 2) n ia d B v c a d B g N N T k N N N N T k E E 2ln ln =+=∆)163253(02222∈-=πF F k e m k N U )]1(356[82202ws c ws Coul r r r Nze U --∈=πChap 14、Polymers14.1 A polymer whose viscoelastic properties are described byEq.(14.40) (i.e., the Maxwell model) is subjected to a time-dependent stress σ=σ0exp(-i ωt). Find the steady-state strain. Compare this result to that of a polymer that obeys the Voigt model, given by Eq. (14.37).Eq.(14.40): Eq. (14.37): 14.2 Consider an elastomer consisting of monomers that are opticallyanisotropic [i.e., they have a polarizability α11(ω) for light parallel to the chain axis and α┴(ω) for light polarized perpendicular to the chain axis]. Assume that there are N chains per unit volume. Let )(ωn be the mean index of refraction of the material. The elastomer is stretched with a steching parameter s , as defined in Secti on 14.5. Show that the elastomer will have a birefringence given by)]()()[1()(]2)([452)()()(112211ωαωαωωπωωωδ⊥--⊥--+=-=s s n n N n n nObtain an expression for the stress optical coefficient. C≡δn(ω)/ζ, where ζ is the applied stress.Chap 15、Dielectric and Ferroelectric Materials∙∙=+εησσG ηστεε=+∙15.1 Given the Landau free-energy density for a ferroelectric of the form Where b>c. Let a=a 0(T-T C ) and assume that b and c are constant. Find P z and χ as a function of T for the state of thermal equilibrium. 15.2 Design a piezoelectric actuator that can be used to sweep anSTM head over the surface of a solid. What is the area that can practically be covered?15.3 Adapt Weiss molecular field theory (see Chapter 9) to describe aferroelectric. Assume that there are just two orientations for the electric-dipole moment of a unit cell and that NN cells interact via an exchange interaction. Obtain the hysteresis curve and values for the coercive field E c , saturation polarization P sat , and remanent polarization P rem .15.4 BaTiO 3 is a paraelectric for T>T C =130℃ and has a Curie constantC=76,000K.(a)If the lattice constant for the cubic unit cell of BaTiO 3 is a=0.401nm, calculate the electric-dipole moment µ of this unit cell. (b)What would the corresponding polarization P=µn be at T=0 K?Chap 16、Superconductors16.1 (a) Derive expression for the difference in entropy△S(T)=S n (T)-S s (T) and the difference in specific heatZ y x x z z y z y x o EP P P P P P P c P P P b P a g g -+++++++=)(2)(422222224442△C(T)=C n (T)-C s (T) between the normal and superconducting states in terms of the critical magnetic field H c (T) and its first derivative dH c /dT and second derivative d 2H c /dT 2. [Hint: Use Eq.(16.3) and standard thermodynamic relationships.](b) Evaluate these expressions for △S(T) and △C(T) for the case where H c (T) can be approximated by H c0[1-(T/T c )2] and show that : (ⅰ) △S(T c )=△S(0)=0(ⅱ) △S(T)>0 for 0<T<T c(ⅲ)△C(T c )=-4µ0H c02/T c . Calculate △C(T c ) from this expressionusing T c = 1.175 K and H c0 = 105 Oe = 8360 A/m for Al and compare with the measured result -225 Jm -3K -1 for Al.(ⅳ) △C=0 for T=T c /3 and T=0K.Eq.(16.3): 16.2 (a) Using Eq.(16.5), calculate the condensation energy in J/m 3 and ineV per electron at T=0K for the superconductor Pb for which H c0=6.39×104A/m.(b) Compare your result from part (a) with the expression ε(0)(ε(0)/E F ) where the superconducting energy gap 2ε(0) = 2.6 meV for Pb. Here ε(0)/E F is the fraction of conduction elections whose energies are actually affected by the condensation .Eq.(16.5): 16.3 Consider the London penetration depth λL defined in Eq.(16.10).⎰+=-=H s s s s H T G dH H M T G T H G 02002),0()(),0(),(μμ2)(),0(),0(20T H T G T G c s n μ=-(a) Calculate λL (0K) for the superconducting Al, Pb, and Nb. (b) If a superconductor has a London penetration depth λL (0K)=200nm, what is the concentration n s of superconducting electrons at T=0.5T c .Eq.(16.10): 16.4 When transport current i flows through a superconducting wireof radius R, its path is confined to a region of thickness λ, the penetration depth, just inside the surface of the wire.(a) In this case show that the critical current density J c =i c /A eff is independent of R and can be expressed in terms of the critical field H c by J c =H c /λ. Here A eff is the effective area through which the current flows, with A eff <<πR 2.(b) Calculate J c for superconducting Pb at T=0K. [Note: H c0 = 803 Oe = 63919 A/m and λ(0) = 39 nm](c) Sketch J c (T)/J c (0) from T = 0 K to T c using the temperature dependencies of H c and λ given in Eqs.(16.6) and (16.11), respectively .Eq.(16.6):Eq.(16.11): 16.5 A type Ⅱ superconductor has T c =125k, ΘD =250K, and κ(T c )=50. Onthe basis of standard theories [free-electron model, Debye model, BCS theory, G-L theory, Pauli limit for H c2 given in Eq.(16.33)], 20)()(e T n mT s L μλ=)1()(220c c c T T H T H -=4)/(1)0()(c L L T T T -=λλestimate the following:(a)The superconducting energy gap 2ε(0).(b) The upper critical field H c2(0)=H p .(c)The co herence length ξ(0) and the penetration depth λ(0).(d)The thermodynamic critical field H c0=H c (0).(e)The coefficients γ and A of the electronic and phonon contributions to the specific heat , γT and AT 3, respectively.Eq.(16.33): 16.7 Use Eq.(16.20) to find the limiting values of λ(l ) and ξ(l ) (a) in theclean limit where the electron mean free path l >>ξ0, and (b) in the dirty limit where l <<ξ0.Eq.(16.20): and 16.8 (a) Calculate the density of vortices per unit area B/Φ0 for thefollowing values of B, the average flux density present in the mixed state of a superconductor. Take H c2=1.6MA/m.(i) B = μ0H c2/2. (ii) B ≈ B c2 = μ0H c2.(b)Calculate the average separation d between the vortices from your answers in part (a) and compare your answers with the conherence length ξ. [Hint: You can obtain ξ with the help of Eq.(16.22).]Eq.(16.22): 16.10 Calculate the number of holes N hole per Cu ion in the CuO 2copper-oxygen layers in the superconductor YBa 2Cu 3O 7-x for the Bp T T H μμε0)()(≈l l 11)(10+=ξξll ξλλ+∞=1)()()(2)(2002T T H c ξπμΦ=cases of x = 0, 0.25, and 0.5. Assume the following ionic charge states for the ions in this structure: Y 3+, Ba 2+, Cu 2+, and O 2-.16.11 For the compound with the chemical formula La 1.7Sr 0.3CuO 3.9:(a)what is the total number of electrons per formula unit outside closed shells?(b)How many electrons are contributed by each ion to the CuO 2 layers?(c)what is the average valence of the copper atoms?(d)Assuming that all copper ions have a charge of +2e, what is the number of holes per formula unit?16.12 Derive Eq.(16.33) for the Pauli limiting field H p by settingG n (H)=G s (H) at H=H p and using the Pauli paramagneticsusceptibility χp =µ0µB 2ρ(E F ) of the conduction electrons in thenormal state. [Hint: Use G n (H)-G n (0)=-µ0χp H 2/2, and the BCS resultG n (0)-G s (0)=ρ(E F )ε(0)2/2.]Eq.(16.33):Chap 17、Magnetic Materials17.1 Consider a single-domain uniaxial ferromagnetic particlemagnetized along its easy axis with M=M s in zero applied magnetic field. The magnetic anisotropy energy density is given by E a =K sin 2θ where K >0 and θ is the angle between the B p T T H μμε0)()(≈magnetization M and the easy axis. A magnetic field H is now applied at 90° to the easy axis.(a)Show that the sum of the anisotropy and magnetostatic energy densities for this particle is ｕ(θ)=K sin 2θ-µ0MHsinθ.(b)Find the angle θ be tween M and the easy axis as a function of the magnitude of the field H by minimizing ｕwith respect to θ .(Note that it will be important to check for the stability of the solution by requiring that ∂2ｕ/∂θ2>0.)(c) Show that the resulting magnetization curve (i.e., the plot of thecomponent of M in the direction of H versus the applied field H ) is a straight line (with slop χ=µ0M 2s /2K ) up to H =H k =2k/µ0M s , at which point the magnetization is saturated in the direction of H . Here H k is the effective magnetic anisotropy field in Eq.(17.14).Eq.(17.14): 17.4 Prove that when the shape anisotropy constant K s is <0 (i.e., whenN ⊥<N 11), the magnetization M for a ferromagnetic film will lie in the plane of the film .17.5 Calculate the radius at which a spherical Fe particle behavessuperparamagnetically at T =300K by setting K 1V=K B T , where K 1≈4.2×104J/m 3 is the first-order magnetocrystalline anisotropy coefficient for Fe and V is the volume of the sphere.17.6 Calculate t he increase in temperature ΔT of a magnetic material withsK M KH 02μ=a square magnetization loop, with M s =1370KA/m and H c =1100kA/m, when the loop is traversed once, Assume that the material is thermally-isolated from its surroundings and that its specific heat is 4×106J/m 3K.17.7 For a magnetically isotropic m aterial with magnetostriction λ, provethat B 2(C 11-C 12)=2B 1C 44. Show, in fact, that if the material is also elastically isotropic, then B 1=B 2. (Hint: See Section 10.8)17.8 Show that B (t) and M (t) both lag the applied magnetic fieldH(t )=H 0e -iωt by the same phas e angle δ when µ0H 0<<B 0cosδ. [Hint: Start by substituting the expressions for B (t) and M (t) from Eq.(17.33) into the expression B =µ0(H+M).]Eq.(17.33): andChap 18、Optical Materials18.1 Suppose that a quantum dot has the shape of a two-dimensionalcircular disk. A model that is often used to describe the potential of an electron confined in such a dot is V(r)=m ﹡ω02r 2/2. Suppose a magnetic induction B is imposed perpendicular to the plane of the dot. Show that the electron energy levels are given by the formula where n=0, 1, 2,…………and l=……, -2, -1, 0, 1, 2,……..18.2 Consider a Lorentz oscillator model for an electron moving in )(0)(δω+-=t i e B t B )(0)(φω+-=t i e M t M **-+++=m eB l m eB l n E l n 2)2()()12(220, ωone-dimensional anharmonic potential described by the Toda potential V(x)=Ae -ax +Bx, where A, a and B are constants. The equation of motion isDerive expressions for the linear polarization P , at frequency ω and the nonlinear polarization at frequency 2ω, P (2ω).18.3 Consider a particle of mass m moving in the anharmonicsymmetric potential V(x)=Acosh[a(x-x o )] subject to a damping force –γv and a driving force qE cosωt . Find the Fourier coefficients for the dipole moment at frequencies ω and 3ω. 18.4 Using Vegard′s law , derive an expression for the bandgap energyE g (x,y) of a layer of In 1-x Ga x As y P 1-y which is lattice matched to an InP substrate. Compare your expression with the experimental result given in Eq.(18.15) and comment on any differences.Eq.(18.15): E g =1.35-0.72y+0.12y 2 eVt qE e e aA dtdx dt x d m o ax ax ωγcos )()(22+-=+--。

布朗鞋业：并购失败，但等来了巴菲特的垂青作者：马岚熙来源：《检察风云》2021年第03期1955年，密苏里州东部法院喊停了一起鞋业并购案。

法院提示，制鞋行业正受到一系列纵向兼并的影响，这一趋势如不被制止将可能实质性地削弱竞争。

《克莱顿法》第七条要求预测兼并在将来可能产生的后果。

法院发现该行业中越来越多制造商有成为它们兼并的零售店的供货来源的趋势。

这一并购案因涉嫌垄断，被法院一纸禁令扼杀。

法院担心的是，制造商控制生产渠道这种趋势并不是自然发生的，而是由该行业中一些大的公司，如布朗鞋业推动的。

在本案中，本来是独立于制造商的一个全国连锁销售店（金尼公司）被一个已经很强大的制造商兼并之后，该制造商直接拥有的零售店数量将上升到全國第二位。

该兼并将使得布朗鞋业控制1600个鞋类销售网点，占全国的7.2%。

且这一变化将在100多个城市一次性地由一个如此大型的兼并造成，法院难以预测会带来怎样的后果。

今天的商学院学生熟悉布朗鞋业，大多是因为1990年的一起并购案：巴菲特收购布朗鞋业。

据说，巴菲特只用了五分钟时间就决定了这一笔两亿美元的收购。

因为他看到，布朗鞋业采取了奇怪的低底薪加高激励的薪酬制度。

这种薪资奖赏制度与巴菲特之前看到的完全不同，不过却深得巴菲特的赞赏。

他说：“它是我见过的实行最奇特的薪金支付方法的公司之一，这种奖励制度能让经理人知道，资本不是免费的，是要付出代价的。

”公司主要的经理人每年底薪只有7800美元，之后再依据公司每年的获利，乘以一个事先约定的百分比，并扣除运用资金的成本，因此可以说这些经理人完全是与股东站在同一条船上。

事实证明，这一判断是正确的，布朗鞋业后续的表现甚至超过了巴菲特的预期。

布朗鞋业是一家真正的百年老店，专门从事制造、进口和销售鞋子，也生产美国首屈一指的钢头安全工作靴、马靴以及休闲鞋。

该公司1883年由亨利·布朗创立，1927年布朗以1万美元的价格把公司卖给了女婿蕾·海弗南。

AppliTopic: V Installatio First, inclu controllerTo Include• Plug • Pres • Sele • Onc The RS23network. O Z-wave deFrom the1. Select2. Select3. Select t 5. Place a from the s Note : Pre associatio 6. Select s a. 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AronovVizia RF + Product: 32 Serial InterAffected:VRC0P-1LW RS232 nce gain be and ed to ally”e ID:1 er: :rface sCommands: The following is the list of commands understood by the VRC0P serial interface: CLASS COMMAND NOMENCLATUREDESCRIPTIONControl CommandsN NODEUse "N" followed by device number(s) whencontrolling a single or group of nodes.(Example: >N2,3ON)ON ONThe ON command turns ON a single or group ofdevices associated to the RS232 module.OFF OFFThe OFF command turns OFF a single or groupof devices associated to the RS232 module.L LEVELSets the light level of a dimmer (0-100%)(Example: >N2L50)GR GROUP RECALLControl 1 or more stored nodes at the same time.The group must first be stored using the GroupStore command(Example: >GR1>ON )(The control command must be entered on aseparate line)S SCENEUse the Scene command to call a scene that wasprogrammed with the Program Scene command.(Example >N2,3S2)DI DIMDim your light using the DIM command(Example: >N2DI)BR BRIGHTBrighten your light using the Bright command(Example: >N2BR)ST STOPThe stop command stops dim/bright light levelchanges. This command needs 1-2 millisecondsbetween DI and BR commands.(Example: >N2ST)SE SENDThe SEND will send any Z-Wave message. Thiscommand is generally used for thermostatcontrol, and other non lighting control commands.(Example: >N10SE70,2)SS SECURE SENDThe SECURE SEND will send any Z-Wavemessage with a secure encryption. Thiscommand is used for security devices such asdoor locks.(Note: Must have a Vizia RF + VRC0P with a +3on the back label and use the RF Installer tool asprimary)(Example: >N10SS98,1,255)Feedback CommandsREQUESTRequest information for various commands(Example: >?N2)UP UPDATEThe Update command gives you the status of asingle or multiple devices activated in yournetwork.(Example: >N2UP)FI FINDFind an unknown Node ID of a device.(Example: >FI4,17,0,1)SPCOMMUNICATIONSPEEDChanges the communication speed/baud rate.(Note: Must have a Vizia RF + VRC0P with a +3on the back label)(Example: >SP1)Program Commands GS GROUP STOREProgram a group of devices using the group storecommand (Note: this is like an Area in ourhandheld remote)(Example: >N2,3,4GS1)PS PROGRAM SCENEProgramming scenes easily allows a user to sendscene commands within a Vizia RF network.(Example: >N2,3,4PS(2-255)AP APPENDWhen you exceed the max of 80 characters to aline, use the AP (append) command to extendyour RS232 Command.(Example: >N2,3,4…..>AP,25,26,ON)NN NODE NAMENode name command allows you to Name yourdevice up to 16 Characters.(Example: >N4NN1BEDROOM DIMMER)NL NODE LOCATIONNode Location commands will allow you to nameyour device location up to 16 characters.(Example: >N4NL1MASTER BEDROOM)DE DEFAULTSending the default command will reset thedevice to factory default. Send DE commandwhile pressing and holding the LED button on theRS232 module.IN INCLUDE/EXCLUDEPuts RS232 module into include or excludemode.AB ABORTAbort command will cancel any previoustransmissions sent from serial interface.RO ROUTESAssigns and deletes routes for the routing slaves(Example: >RO2,4)Control Commands:o Start Association (N): Associate single or group of nodes (not stored in memory) >N2; Associate Node 2 to the Serial interface>N2,5,10; Associate Nodes 2, 5 and 10 to the Serial interface>N; Removes current association (no nodes assigned)o On/Off (ON/OFF): Turn node or group of nodes ON or OFF>N2ON; Turn node 2 ON>N2,5,10OFF; Turn nodes 2, 5 and 10 OFF>N,ON; Broadcasts to all nearby nodes to turn ONo Set Level (L): Assign a light level for a dimming node or group>N2L50; Set light level to 50% for node 2>N2,5,10L50; Set light level to 50% for nodes 2, 5 and 10o Group Recall (GR): Control a group of nodes that was stored to non-volatile memory with the “GS” command>GR1>ON; Turn ON all nodes in group 1>GR1>L50; Set the light level of all nodes in group 1 to 50%o Scene (S): Activate a scene stored with the “PS” command. Requires Scene #(1-255) and Fade rate (1-255) parameters>N2,3S2; Activate scene 2 (default fade rate is assumed)>GR1>S2,255; Activate scene 2 with default fade rates for group 1o Dim/Bright (DI/BR): Dims/Brightens the light from current level for node or a group >N2DI; Dims the light level for node 2 to 0%>N2,5,10BR; Brightens the light level for nodes 2, 5, and 10 to 99%>GR1>BR; Brightens the light level for group 1 to 99%o Stop (ST): Stops the light from changing the level for the node or group (used to stop the DI/BR command operation)>N2,5,10ST; Stops light from changing level for nodes 2, 5 and 10>GR1>ST; Stops light from changing level for group 1o Send (SE): To provide control to nodes different from lighting control nodes the send command can be used. This command sends any Z-wave command over RF. The first parameter is the command class, the second is the command and the rest of the command is the parameters of the appropriate command class. Refer to the Zensys command class specification for theinformation on the command classes available for Z-Wave system. (See Appendix A-C) >N5SE69,2; Requests thermostat fan state from thermostat node 5>N5SE68,1,1; Set thermostat node 5 fan mode to 1: Will turn the manual fan operation on.>N6SE49,4; Requests the level of a multi-level sensor node 6 (i.e. temperature sensor)o Secure Send (SS): To provide control to secure encrypted nodes such as door locks the Secure Send command is used. This command sends any Z-wave command with the security key over RF. The first parameter is the command class, the second is the command and the rest of thecommand is the parameters of the appropriate command class. Refer to the Zensys command class specification for the information on the command classes available for Z-Wave system.(See Appendix H-I)Note: Must have a Vizia RF + VRC0P with a +3 on the back label and RF Installer Tool asprimary to use this command.>N6SS98,1,0; Unlocks the door lock node 6>N6SS98,1,255; Locks the door lock node 6>N6SS128,2; Requests the battery level for door lock node 6Feedback Commands:o Request (?): Provides status information for a node or group of nodes>?N2; Request light level information from node 2Note: Update command is preferred>N2?Syyy; Request scene #yyy information from node 2If yyy=0; current scene information will be returned.Reports back with:<N002:044,003,###,lll,fff### = scene numberlll = light levelfff = fade rate>N2?NN or >N2?NL; Requests node name or location for node 2>?FIbbb,ggg,sss,iii; Request node ID<Fxxx - Reports back with the node ID, where xxx is a node ID for the device.o Update (UP): After each control command is sent, the sending node is responsible for updating information to all other controllers associated to the same nodes. To keep the system up-to-date, the update command should be appended to all control commands. It is recommended to wait a few seconds between the end of a control command and the start of the update command.>N1,10,13ON>UPo Find (FI): This command is used to find the network node ID for a Z-wave node with certain basic, generic and specific classes. It may be used during the installation procedure as well as to check if a node is in the routing table.>FIbbb,ggg,sss,iiibbb = basic class number (mandatory field)ggg = generic class number (mandatory field) (switch = 16, dimmer = 17, thermostat = 8)sss = specific class number (assumed ‘0’ if field is missing)iii = instance number for the device (assumed ‘1’ if field is missing)If any of the class numbers (bbb,ggg,sss) is 0, the command will search for any device.The instance # (1-232) will reference the instance in the routing table for certain devices.Zensys specifies only 4 valid basic classes:1 = Controller2 = Static Controller3 = Slave4 = Routing SlaveFor generic and specific classes refer to the Zensys device class specification.After searching, the device found will be added to the current association.Afterward, you can store the current group or send any message using this group.o Communication Speed (SP): This command allows to switch between specific baud rates for the serial communication.Note: Must have a Vizia RF + VRC0P with a +3 on the back label to use this command>SPxwhere x can range from 0 to 4 corresponding to the specified baud rate;0 = 9600 (default)1 = 192002 = 384003 = 576004 = 115200Note: After exclusion, reset to default, or changing the speed over RF, the Serial interface will continue to communicate with the speed it had before, but after cycling power it will return to the default, 9600.Program Commands:o Group Store (GS): Store current association list in non-volatile memory>N2,5,10GS1; Stored node 2, 5 and 10 to group 1o Program Scene (PS): Store current association light levels to a scene>N2,5,10PS2, 255; Programs current levels as scene 2 with default fade rate for nodes 2, 5and 10o Node Name/Location (NN/NL): provides access to programming node name and location (allowed up to 16 characters)>NxxxNNdyyy..yyy; Assigns the network name for the node>NxxxNLdyyy..yyy; Assigns the network location for the nodexxx = node #d = character set;0 = standard ASCII1 = extended ASCII (recommended)2 = Unicode UTFIGyyy..yyy = ASCII string up to 16 characterso Append (AP): Extends the ASCII command when it is over 80 characters>N2,3,4,…xxx,; Association list is full for this line>APyyy,zzzON; The append command allows you to continue with the command on the nextlineo Default (DE): Defaults the Serial Interface when user is holding the button downo Include/Exclude (IN): Places the Serial Interface in Programming mode for inclusion or exclusion from the networko Abort (AB): Cancels any previous transmission sent from the Serial Interfaceo Routes (RO): To provide routing slaves with valid routes (when nodes can’t reach each other directly) “RO” command is used. Routing slave can have up to 5 nodes assign return routes.When adding new routes, it is recommended to delete all existing routes first.>RO2,0; delete all routes for the routing slave node 2.>RO2,10; setup up to 4 valid routes for node 2 to node 10.Serial interface replies:A Serial interface replies back every command sent over the serial port. It also replies back after finishing every RF transmission and when adding/removing itself to a Z-wave network. The serial interface receives messages addressed to it and forwards the messages that are not processed by the controller itself to the serial output.Receive command replies:After receiving commands over the serial port, the serial interface will check for any commands and then process them. If the sent command was correct and the device has enough resources to implement the command, the interface responds with : <E000. – No error message.If any error has been detected or some of the resources requested are unavailable, the node responds with <Exxx, where xxx is the error number. Possible errors are listed below:0 – No error1 – Wrong start of the string symbol2 – Input buffer overflow3 – Cannot start RF transmission. All buffers are taken4 – Cannot start RF transmission because previous one has not finished5 – Unrecognized command6 – Attempt to send the new buffer over RS232 before previous one had been processed7 – The send Message does not have data fields specified8 – Cannot stop SUC mode. Node is SUC9 – EEPROM is busy, can’t store group information10 – No devices with specified properties have been foundReplies after implementing RF transmission commands:After implementing the requested transmission, the serial interface will reply with the string: <Xyyy;where yyy is the error codeyyy = 000 if transmission was successfulyyy = 002 if an error was detected during transmissionAfter receiving <Xyyy; the next command can be sent.APPENDIXA. Multilevel Sensor: Below is an example of getting information from a Multilevel Sensor (i.e. a temperature sensor used by thermostats). Assume that sensor node ID is 5>N5SE49,4 <- Send multilevel sensor GET<E000 <- RS interface processed the input<X000 <- Appropriate message has been sent correctly<N005:049,005,001,009,075 <- REPORT from the sensor:049 – Command class005 – Command report001 – The value sent is temperature009 – The value represented by 1 byte and in deg. F075 – Temperature 75FB. Control Thermostat Fan: Assume that thermostat node is 5>N5SE68,1,1 <- Set thermostat fan mode 1: turns the manual fan operation on.<E000 <- RS interface processed the input<X000 <- Appropriate message has been sent correctly>N5SE68,2 <- Request thermostat fan mode<E000 <- RS interface processed the input<X000 <- Appropriate message has been sent correctly<N005:068,003,001 <- Thermostat report indicate mode 1>N5SE68,1,0 <- Set thermostat fan mode 0: The manual fan operation goes off<E000 <- RS interface processed the input<X000 <- Appropriate message has been sent correctly>N5SE68,2 <- Request thermostat fan mode<E000 <- RS interface processed the input<X000 <- Appropriate message has been sent correctly<N005:068,003,000 <- Thermostat report indicate mode 1C. Set Thermostat Set Point: Assume that thermostat node is 5>N4SE67,1,2,9,80 <- Set thermostat cooling set point to 80F<E000<X000>N4SE67,2,2 <- Request thermostat set point information<E000<X000<N004:067,003,002,009,080 <- Thermostat report with set point 80F.Page 10 of 11 Application NoteD. Dimmer control: Assume dimmer node is node 2.>N2L50UP <- Set light level at 50% and request update<E000 <- Request processed<X000 <- Request has been sent<N002:044,003,000,050 <- Node 2 sends back current level as result of update.>N2OFF,UP <- Turn dimmer OFF sequence.<E000 <- Request processed<X000 <- Request has been sent<N002:044,003,000,000 <- Response shows light level of 0% or OFFE. Updates with Few Nodes: Assume node 8 is the dimmer and node 4 is the thermostat>N8,4UP <- Instead of performing Request use Update<E000 <- Request processed<N008:044,003,000,050 <- Response from dimmer<N004:064,003,003 <- Response from thermostatF. If node ID is unknown the find node ID command can be used.Emptygroupcurrent<->N,>FI0,8 SE67,1,2,9,80 <- Set the first thermostat cooling set point to 80FprocessedRequest<E000<-<X000 <- Request has been sent>GS100 <- Store the thermostat as a group 100>?FI0,8 <- Find out what thermostat node ID:that the thermostat has node ID=4reported<F004 <-InterfaceG. Setup Association Tables for Node: To setup an association table for the node use association class. Use the Send command to send the association table. (Use Secure Send for security devices) >SE133,1, Group#, xxx,yyy… <- Add nodes to association listGroup # = 1 for dimmers/switches, 1 – 4 for the Controller buttonsxxx,yyy = nodes added to the node association list for the switch/dimmer or controller button> SE133,4, Group#, node1, node2…<- Remove nodes from association list>N2SE133,1,1,7 <- Add node 7 to the association table for the dimmer node 2Page 11 of 11 Application Note H. Control a Door Lock: Assume door lock is node 5.Note: You must have a Vizia RF + VRC0P with a +3 on the back label to perform securitycommands.>N5SS98,1,255 <- Lock the doorRequestProcessed<-<E000ProcessedRequest<E000<-<N005:152,128,029,161,157,021,204,149,024,057 <- Security nonce messagebeensenthas<E000Request<-thedoorUnlock>N5SS98,1,0 <-RequestProcessed<-<E000RequestProcessed <E000<-<N005:152,128,176,098,227,056,039,001,095,155 <- Security nonce messagesentbeenhas<-Request<X000I. Request Door Lock Battery Level: Assume door lock is node 5.Note: You must have a Vizia RF + VRC0P with a +3 on the back label to perform securitycommands.>N5SS128,2 <- Request door lock DC battery levelRequestProcessed<-<E000ProcessedRequest<-<E000<N005:152,128,158,087,040,031,223,110,171,002 <- Security nonce messagebeenhassent<-Request<X000<N005:152,064 <- Security command class<n005:000,128,003,070 <- Door Lock DC battery level is at 70%(Security responses have a lowercase “n” when displayed)Leviton disclaims liability for any damages, including but not limited to personal injury, property damageor theft, sustained in connection with the locking and/or unlocking of, or control of doors.。

美国是世界上公司法、证券法研究最为发达的国家之一，在美国法学期刊（Law Review & Journals）上每年发表400多篇以公司法和证券法为主题的论文。

自1994年开始，美国的公司法学者每年会投票从中遴选出10篇左右重要的论文，重印于Corporate Practice Commentator，至2008年，已经评选了15年，计177篇论文入选。

以下是每年入选的论文列表：2008年（以第一作者姓名音序为序）：1.Anabtawi, Iman and Lynn Stout. Fiduciary duties for activist shareholders. 60 Stan. L. Rev. 1255-1308 (2008).2.Brummer, Chris. Corporate law preemption in an age of global capital markets. 81 S. Cal. L. Rev. 1067-1114 (2008).3.Choi, Stephen and Marcel Kahan. The market penalty for mutual fund scandals. 87 B.U. L. Rev. 1021-1057 (2007).4.Choi, Stephen J. and Jill E. Fisch. On beyond CalPERS: Survey evidence on the developing role of public pension funds in corporate governance. 61 V and. L. Rev. 315-354 (2008).5.Cox, James D., Randall S. Thoma s and Lynn Bai. There are plaintiffs and…there are plaintiffs: An empirical analysis of securities class action settlements. 61 V and. L. Rev. 355-386 (2008).6.Henderson, M. Todd. Paying CEOs in bankruptcy: Executive compensation when agency costs are low. 101 Nw. U. L. Rev. 1543-1618 (2007).7.Hu, Henry T.C. and Bernard Black. Equity and debt decoupling and empty voting II: Importance and extensions. 156 U. Pa. L. Rev. 625-739 (2008).8.Kahan, Marcel and Edward Rock. The hanging chads of corporate voting. 96 Geo. L.J. 1227-1281 (2008).9.Strine, Leo E., Jr. Toward common sense and common ground? Reflections on the shared interests of managers and labor in a more rational system of corporate governance. 33 J. Corp. L. 1-20 (2007).10.Subramanian, Guhan. Go-shops vs. no-shops in private equity deals: Evidence and implications.63 Bus. Law. 729-760 (2008).2007年：1.Baker, Tom and Sean J. Griffith. The Missing Monitor in Corporate Governance: The Directors’ & Officers’ Liability Insurer. 95 Geo. L.J. 1795-1842 (2007).2.Bebchuk, Lucian A. The Myth of the Shareholder Franchise. 93 V a. L. Rev. 675-732 (2007).3.Choi, Stephen J. and Robert B. Thompson. Securities Litigation and Its Lawyers: Changes During the First Decade After the PSLRA. 106 Colum. L. Rev. 1489-1533 (2006).4.Coffee, John C., Jr. Reforming the Securities Class Action: An Essay on Deterrence and Its Implementation. 106 Colum. L. Rev. 1534-1586 (2006).5.Cox, James D. and Randall S. Thomas. Does the Plaintiff Matter? An Empirical Analysis of Lead Plaintiffs in Securities Class Actions. 106 Colum. L. Rev. 1587-1640 (2006).6.Eisenberg, Theodore and Geoffrey Miller. Ex Ante Choice of Law and Forum: An Empirical Analysis of Corporate Merger Agreements. 59 V and. L. Rev. 1975-2013 (2006).7.Gordon, Jeffrey N. The Rise of Independent Directors in the United States, 1950-2005: Of Shareholder V alue and Stock Market Prices. 59 Stan. L. Rev. 1465-1568 (2007).8.Kahan, Marcel and Edward B. Rock. Hedge Funds in Corporate Governance and Corporate Control. 155 U. Pa. L. Rev. 1021-1093 (2007).ngevoort, Donald C. The Social Construction of Sarbanes-Oxley. 105 Mich. L. Rev. 1817-1855 (2007).10.Roe, Mark J. Legal Origins, Politics, and Modern Stock Markets. 120 Harv. L. Rev. 460-527 (2006).11.Subramanian, Guhan. Post-Siliconix Freeze-outs: Theory and Evidence. 36 J. Legal Stud. 1-26 (2007). (NOTE: This is an earlier working draft. The published article is not freely available, and at SLW we generally respect the intellectual property rights of others.)2006年：1.Bainbridge, Stephen M. Director Primacy and Shareholder Disempowerment. 119 Harv. L. Rev. 1735-1758 (2006).2.Bebchuk, Lucian A. Letting Shareholders Set the Rules. 119 Harv. L. Rev. 1784-1813 (2006).3.Black, Bernard, Brian Cheffins and Michael Klausner. Outside Director Liability. 58 Stan. L. Rev. 1055-1159 (2006).4.Choi, Stephen J., Jill E. Fisch and A.C. Pritchard. Do Institutions Matter? The Impact of the Lead Plaintiff Provision of the Private Securities Litigation Reform Act. 835.Cox, James D. and Randall S. Thomas. Letting Billions Slip Through Y our Fingers: Empirical Evidence and Legal Implications of the Failure of Financial Institutions to Participate in Securities Class Action Settlements. 58 Stan. L. Rev. 411-454 (2005).6.Gilson, Ronald J. Controlling Shareholders and Corporate Governance: Complicating the Comparative Taxonomy. 119 Harv. L. Rev. 1641-1679 (2006).7.Goshen , Zohar and Gideon Parchomovsky. The Essential Role of Securities Regulation. 55 Duke L.J. 711-782 (2006).8.Hansmann, Henry, Reinier Kraakman and Richard Squire. Law and the Rise of the Firm. 119 Harv. L. Rev. 1333-1403 (2006).9.Hu, Henry T. C. and Bernard Black. Empty V oting and Hidden (Morphable) Ownership: Taxonomy, Implications, and Reforms. 61 Bus. Law. 1011-1070 (2006).10.Kahan, Marcel. The Demand for Corporate Law: Statutory Flexibility, Judicial Quality, or Takeover Protection? 22 J. L. Econ. & Org. 340-365 (2006).11.Kahan, Marcel and Edward Rock. Symbiotic Federalism and the Structure of Corporate Law.58 V and. L. Rev. 1573-1622 (2005).12.Smith, D. Gordon. The Exit Structure of V enture Capital. 53 UCLA L. Rev. 315-356 (2005).2005年：1.Bebchuk, Lucian Arye. The case for increasing shareholder power. 118 Harv. L. Rev. 833-914 (2005).2.Bratton, William W. The new dividend puzzle. 93 Geo. L.J. 845-895 (2005).3.Elhauge, Einer. Sacrificing corporate profits in the public interest. 80 N.Y.U. L. Rev. 733-869 (2005).4.Johnson, . Corporate officers and the business judgment rule. 60 Bus. Law. 439-469 (2005).haupt, Curtis J. In the shadow of Delaware? The rise of hostile takeovers in Japan. 105 Colum. L. Rev. 2171-2216 (2005).6.Ribstein, Larry E. Are partners fiduciaries? 2005 U. Ill. L. Rev. 209-251.7.Roe, Mark J. Delaware?s politics. 118 Harv. L. Rev. 2491-2543 (2005).8.Romano, Roberta. The Sarbanes-Oxley Act and the making of quack corporate governance. 114 Y ale L.J. 1521-1611 (2005).9.Subramanian, Guhan. Fixing freezeouts. 115 Y ale L.J. 2-70 (2005).10.Thompson, Robert B. and Randall S. Thomas. The public and private faces of derivative lawsuits. 57 V and. L. Rev. 1747-1793 (2004).11.Weiss, Elliott J. and J. White. File early, then free ride: How Delaware law (mis)shapes shareholder class actions. 57 V and. L. Rev. 1797-1881 (2004).2004年：1Arlen, Jennifer and Eric Talley. Unregulable defenses and the perils of shareholder choice. 152 U. Pa. L. Rev. 577-666 (2003).2.Bainbridge, Stephen M. The business judgment rule as abstention doctrine. 57 V and. L. Rev. 83-130 (2004).3.Bebchuk, Lucian Arye and Alma Cohen. Firms' decisions where to incorporate. 46 J.L. & Econ. 383-425 (2003).4.Blair, Margaret M. Locking in capital: what corporate law achieved for business organizers in the nineteenth century. 51 UCLA L. Rev. 387-455 (2003).5.Gilson, Ronald J. and Jeffrey N. Gordon. Controlling shareholders. 152 U. Pa. L. Rev. 785-843 (2003).6.Roe, Mark J. Delaware 's competition. 117 Harv. L. Rev. 588-646 (2003).7.Sale, Hillary A. Delaware 's good faith. 89 Cornell L. Rev. 456-495 (2004).8.Stout, Lynn A. The mechanisms of market inefficiency: an introduction to the new finance. 28 J. Corp. L. 635-669 (2003).9.Subramanian, Guhan. Bargaining in the shadow of takeover defenses. 113 Y ale L.J. 621-686 (2003).10.Subramanian, Guhan. The disappearing Delaware effect. 20 J.L. Econ. & Org. 32-59 (2004)11.Thompson, Robert B. and Randall S. Thomas. The new look of shareholder litigation: acquisition-oriented class actions. 57 V and. L. Rev. 133-209 (2004).2003年：1.A yres, Ian and Stephen Choi. Internalizing outsider trading. 101 Mich. L. Rev. 313-408 (2002).2.Bainbridge, Stephen M. Director primacy: The means and ends of corporate governance. 97 Nw. U. L. Rev. 547-606 (2003).3.Bebchuk, Lucian, Alma Cohen and Allen Ferrell. Does the evidence favor state competition in corporate law? 90 Cal. L. Rev. 1775-1821 (2002).4.Bebchuk, Lucian Arye, John C. Coates IV and Guhan Subramanian. The Powerful Antitakeover Force of Staggered Boards: Further findings and a reply to symposium participants. 55 Stan. L. Rev. 885-917 (2002).5.Choi, Stephen J. and Jill E. Fisch. How to fix Wall Street: A voucher financing proposal for securities intermediaries. 113 Y ale L.J. 269-346 (2003).6.Daines, Robert. The incorporation choices of IPO firms. 77 N.Y.U. L. Rev.1559-1611 (2002).7.Gilson, Ronald J. and David M. Schizer. Understanding venture capital structure: A taxexplanation for convertible preferred stock. 116 Harv. L. Rev. 874-916 (2003).8.Kahan, Marcel and Ehud Kamar. The myth of state competition in corporate law. 55 Stan. L. Rev. 679-749 (2002).ngevoort, Donald C. Taming the animal spirits of the stock markets: A behavioral approach to securities regulation. 97 Nw. U. L. Rev. 135-188 (2002).10.Pritchard, A.C. Justice Lewis F. Powell, Jr., and the counterrevolution in the federal securities laws. 52 Duke L.J. 841-949 (2003).11.Thompson, Robert B. and Hillary A. Sale. Securities fraud as corporate governance: Reflections upon federalism. 56 V and. L. Rev. 859-910 (2003).2002年：1.Allen, William T., Jack B. Jacobs and Leo E. Strine, Jr. Function over Form: A Reassessment of Standards of Review in Delaware Corporation Law. 26 Del. J. Corp. L. 859-895 (2001) and 56 Bus. Law. 1287 (2001).2.A yres, Ian and Joe Bankman. Substitutes for Insider Trading. 54 Stan. L. Rev. 235-254 (2001).3.Bebchuk, Lucian Arye, Jesse M. Fried and David I. Walker. Managerial Power and Rent Extraction in the Design of Executive Compensation. 69 U. Chi. L. Rev. 751-846 (2002).4.Bebchuk, Lucian Arye, John C. Coates IV and Guhan Subramanian. The Powerful Antitakeover Force of Staggered Boards: Theory, Evidence, and Policy. 54 Stan. L. Rev. 887-951 (2002).5.Black, Bernard and Reinier Kraakman. Delaware’s Takeover Law: The Uncertain Search for Hidden V alue. 96 Nw. U. L. Rev. 521-566 (2002).6.Bratton, William M. Enron and the Dark Side of Shareholder V alue. 76 Tul. L. Rev. 1275-1361 (2002).7.Coates, John C. IV. Explaining V ariation in Takeover Defenses: Blame the Lawyers. 89 Cal. L. Rev. 1301-1421 (2001).8.Kahan, Marcel and Edward B. Rock. How I Learned to Stop Worrying and Love the Pill: Adaptive Responses to Takeover Law. 69 U. Chi. L. Rev. 871-915 (2002).9.Kahan, Marcel. Rethinking Corporate Bonds: The Trade-off Between Individual and Collective Rights. 77 N.Y.U. L. Rev. 1040-1089 (2002).10.Roe, Mark J. Corporate Law’s Limits. 31 J. Legal Stud. 233-271 (2002).11.Thompson, Robert B. and D. Gordon Smith. Toward a New Theory of the Shareholder Role: "Sacred Space" in Corporate Takeovers. 80 Tex. L. Rev. 261-326 (2001).2001年：1.Black, Bernard S. The legal and institutional preconditions for strong securities markets. 48 UCLA L. Rev. 781-855 (2001).2.Coates, John C. IV. Takeover defenses in the shadow of the pill: a critique of the scientific evidence. 79 Tex. L. Rev. 271-382 (2000).3.Coates, John C. IV and Guhan Subramanian. A buy-side model of M&A lockups: theory and evidence. 53 Stan. L. Rev. 307-396 (2000).4.Coffee, John C., Jr. The rise of dispersed ownership: the roles of law and the state in the separation of ownership and control. 111 Y ale L.J. 1-82 (2001).5.Choi, Stephen J. The unfounded fear of Regulation S: empirical evidence on offshore securities offerings. 50 Duke L.J. 663-751 (2000).6.Daines, Robert and Michael Klausner. Do IPO charters maximize firm value? Antitakeover protection in IPOs. 17 J.L. Econ. & Org. 83-120 (2001).7.Hansmann, Henry and Reinier Kraakman. The essential role of organizational law. 110 Y ale L.J. 387-440 (2000).ngevoort, Donald C. The human nature of corporate boards: law, norms, and the unintended consequences of independence and accountability. 89 Geo. L.J. 797-832 (2001).9.Mahoney, Paul G. The political economy of the Securities Act of 1933. 30 J. Legal Stud. 1-31 (2001).10.Roe, Mark J. Political preconditions to separating ownership from corporate control. 53 Stan. L. Rev. 539-606 (2000).11.Romano, Roberta. Less is more: making institutional investor activism a valuable mechanism of corporate governance. 18 Y ale J. on Reg. 174-251 (2001).2000年：1.Bratton, William W. and Joseph A. McCahery. Comparative Corporate Governance and the Theory of the Firm: The Case Against Global Cross Reference. 38 Colum. J. Transnat’l L. 213-297 (1999).2.Coates, John C. IV. Empirical Evidence on Structural Takeover Defenses: Where Do We Stand?54 U. Miami L. Rev. 783-797 (2000).3.Coffee, John C., Jr. Privatization and Corporate Governance: The Lessons from Securities Market Failure. 25 J. Corp. L. 1-39 (1999).4.Fisch, Jill E. The Peculiar Role of the Delaware Courts in the Competition for Corporate Charters. 68 U. Cin. L. Rev. 1061-1100 (2000).5.Fox, Merritt B. Retained Mandatory Securities Disclosure: Why Issuer Choice Is Not Investor Empowerment. 85 V a. L. Rev. 1335-1419 (1999).6.Fried, Jesse M. Insider Signaling and Insider Trading with Repurchase Tender Offers. 67 U. Chi. L. Rev. 421-477 (2000).7.Gulati, G. Mitu, William A. Klein and Eric M. Zolt. Connected Contracts. 47 UCLA L. Rev. 887-948 (2000).8.Hu, Henry T.C. Faith and Magic: Investor Beliefs and Government Neutrality. 78 Tex. L. Rev. 777-884 (2000).9.Moll, Douglas K. Shareholder Oppression in Close Corporations: The Unanswered Question of Perspective. 53 V and. L. Rev. 749-827 (2000).10.Schizer, David M. Executives and Hedging: The Fragile Legal Foundation of Incentive Compatibility. 100 Colum. L. Rev. 440-504 (2000).11.Smith, Thomas A. The Efficient Norm for Corporate Law: A Neotraditional Interpretation of Fiduciary Duty. 98 Mich. L. Rev. 214-268 (1999).12.Thomas, Randall S. and Kenneth J. Martin. The Determinants of Shareholder V oting on Stock Option Plans. 35 Wake Forest L. Rev. 31-81 (2000).13.Thompson, Robert B. Preemption and Federalism in Corporate Governance: Protecting Shareholder Rights to V ote, Sell, and Sue. 62 Law & Contemp. Probs. 215-242 (1999).1999年（以第一作者姓名音序为序）：1.Bankman, Joseph and Ronald J. Gilson. Why Start-ups? 51 Stan. L. Rev. 289-308 (1999).2.Bhagat, Sanjai and Bernard Black. The Uncertain Relationship Between Board Composition and Firm Performance. 54 Bus. Law. 921-963 (1999).3.Blair, Margaret M. and Lynn A. Stout. A Team Production Theory of Corporate Law. 85 V a. L. Rev. 247-328 (1999).4.Coates, John C., IV. “Fair V alue” As an A voidable Rule of Corporate Law: Minority Discounts in Conflict Transactions. 147 U. Pa. L. Rev. 1251-1359 (1999).5.Coffee, John C., Jr. The Future as History: The Prospects for Global Convergence in Corporate Governance and Its Implications. 93 Nw. U. L. Rev. 641-707 (1999).6.Eisenberg, Melvin A. Corporate Law and Social Norms. 99 Colum. L. Rev. 1253-1292 (1999).7.Hamermesh, Lawrence A. Corporate Democracy and Stockholder-Adopted By-laws: Taking Back the Street? 73 Tul. L. Rev. 409-495 (1998).8.Krawiec, Kimberly D. Derivatives, Corporate Hedging, and Shareholder Wealth: Modigliani-Miller Forty Y ears Later. 1998 U. Ill. L. Rev. 1039-1104.ngevoort, Donald C. Rereading Cady, Roberts: The Ideology and Practice of Insider Trading Regulation. 99 Colum. L. Rev. 1319-1343 (1999).ngevoort, Donald C. Half-Truths: Protecting Mistaken Inferences By Investors and Others.52 Stan. L. Rev. 87-125 (1999).11.Talley, Eric. Turning Servile Opportunities to Gold: A Strategic Analysis of the Corporate Opportunities Doctrine. 108 Y ale L.J. 277-375 (1998).12.Williams, Cynthia A. The Securities and Exchange Commission and Corporate Social Transparency. 112 Harv. L. Rev. 1197-1311 (1999).1998年：1.Carney, William J., The Production of Corporate Law, 71 S. Cal. L. Rev. 715-780 (1998).2.Choi, Stephen, Market Lessons for Gatekeepers, 92 Nw. U. L. Rev. 916-966 (1998).3.Coffee, John C., Jr., Brave New World?: The Impact(s) of the Internet on Modern Securities Regulation. 52 Bus. Law. 1195-1233 (1997).ngevoort, Donald C., Organized Illusions: A Behavioral Theory of Why Corporations Mislead Stock Market Investors (and Cause Other Social Harms). 146 U. Pa. L. Rev. 101-172 (1997).ngevoort, Donald C., The Epistemology of Corporate-Securities Lawyering: Beliefs, Biases and Organizational Behavior. 63 Brook. L. Rev. 629-676 (1997).6.Mann, Ronald J. The Role of Secured Credit in Small-Business Lending. 86 Geo. L.J. 1-44 (1997).haupt, Curtis J., Property Rights in Firms. 84 V a. L. Rev. 1145-1194 (1998).8.Rock, Edward B., Saints and Sinners: How Does Delaware Corporate Law Work? 44 UCLA L. Rev. 1009-1107 (1997).9.Romano, Roberta, Empowering Investors: A Market Approach to Securities Regulation. 107 Y ale L.J. 2359-2430 (1998).10.Schwab, Stewart J. and Randall S. Thomas, Realigning Corporate Governance: Shareholder Activism by Labor Unions. 96 Mich. L. Rev. 1018-1094 (1998).11.Skeel, David A., Jr., An Evolutionary Theory of Corporate Law and Corporate Bankruptcy. 51 V and. L. Rev. 1325-1398 (1998).12.Thomas, Randall S. and Martin, Kenneth J., Should Labor Be Allowed to Make Shareholder Proposals? 73 Wash. L. Rev. 41-80 (1998).1997年：1.Alexander, Janet Cooper, Rethinking Damages in Securities Class Actions, 48 Stan. L. Rev. 1487-1537 (1996).2.Arlen, Jennifer and Kraakman, Reinier, Controlling Corporate Misconduct: An Analysis of Corporate Liability Regimes, 72 N.Y.U. L. Rev. 687-779 (1997).3.Brudney, Victor, Contract and Fiduciary Duty in Corporate Law, 38 B.C. L. Rev. 595-665 (1997).4.Carney, William J., The Political Economy of Competition for Corporate Charters, 26 J. Legal Stud. 303-329 (1997).5.Choi, Stephen J., Company Registration: Toward a Status-Based Antifraud Regime, 64 U. Chi. L. Rev. 567-651 (1997).6.Fox, Merritt B., Securities Disclosure in a Globalizing Market: Who Should Regulate Whom. 95 Mich. L. Rev. 2498-2632 (1997).7.Kahan, Marcel and Klausner, Michael, Lockups and the Market for Corporate Control, 48 Stan. L. Rev. 1539-1571 (1996).8.Mahoney, Paul G., The Exchange as Regulator, 83 V a. L. Rev. 1453-1500 (1997).haupt, Curtis J., The Market for Innovation in the United States and Japan: V enture Capital and the Comparative Corporate Governance Debate, 91 Nw. U.L. Rev. 865-898 (1997).10.Skeel, David A., Jr., The Unanimity Norm in Delaware Corporate Law, 83 V a. L. Rev. 127-175 (1997).1996年：1.Black, Bernard and Reinier Kraakman A Self-Enforcing Model of Corporate Law, 109 Harv. L. Rev. 1911 (1996)2.Gilson, Ronald J. Corporate Governance and Economic Efficiency: When Do Institutions Matter?, 74 Wash. U. L.Q. 327 (1996)3. Hu, Henry T.C. Hedging Expectations: "Derivative Reality" and the Law and Finance of the Corporate Objective, 21 J. Corp. L. 3 (1995)4.Kahan, Marcel & Michael Klausner Path Dependence in Corporate Contracting: Increasing Returns, Herd Behavior and Cognitive Biases, 74 Wash. U. L.Q. 347 (1996)5.Kitch, Edmund W. The Theory and Practice of Securities Disclosure, 61 Brooklyn L. Rev. 763 (1995)ngevoort, Donald C. Selling Hope, Selling Risk: Some Lessons for Law From Behavioral Economics About Stockbrokers and Sophisticated Customers, 84 Cal. L. Rev. 627 (1996)7.Lin, Laura The Effectiveness of Outside Directors as a Corporate Governance Mechanism: Theories and Evidence, 90 Nw. U.L. Rev. 898 (1996)lstein, Ira M. The Professional Board, 50 Bus. Law 1427 (1995)9.Thompson, Robert B. Exit, Liquidity, and Majority Rule: Appraisal's Role in Corporate Law, 84 Geo. L.J. 1 (1995)10.Triantis, George G. and Daniels, Ronald J. The Role of Debt in Interactive Corporate Governance. 83 Cal. L. Rev. 1073 (1995)1995年：公司法：1.Arlen, Jennifer and Deborah M. Weiss A Political Theory of Corporate Taxation,. 105 Y ale L.J. 325-391 (1995).2.Elson, Charles M. The Duty of Care, Compensation, and Stock Ownership, 63 U. Cin. L. Rev. 649 (1995).3.Hu, Henry T.C. Heeding Expectations: "Derivative Reality" and the Law and Finance of the Corporate Objective, 73 Tex. L. Rev. 985-1040 (1995).4.Kahan, Marcel The Qualified Case Against Mandatory Terms in Bonds, 89 Nw. U.L. Rev. 565-622 (1995).5.Klausner, Michael Corporations, Corporate Law, and Networks of Contracts, 81 V a. L. Rev. 757-852 (1995).6.Mitchell, Lawrence E. Cooperation and Constraint in the Modern Corporation: An Inquiry Into the Causes of Corporate Immorality, 73 Tex. L. Rev. 477-537 (1995).7.Siegel, Mary Back to the Future: Appraisal Rights in the Twenty-First Century, 32 Harv. J. on Legis. 79-143 (1995).证券法：1.Grundfest, Joseph A. Why Disimply? 108 Harv. L. Rev. 727-747 (1995).2.Lev, Baruch and Meiring de V illiers Stock Price Crashes and 10b-5 Damages: A Legal Economic, and Policy Analysis, 47 Stan. L. Rev. 7-37 (1994).3.Mahoney, Paul G. Mandatory Disclosure as a Solution to Agency Problems, 62 U. Chi. L. Rev. 1047-1112 (1995).4.Seligman, Joel The Merits Do Matter, 108 Harv. L. Rev. 438 (1994).5.Seligman, Joel The Obsolescence of Wall Street: A Contextual Approach to the Evolving Structure of Federal Securities Regulation, 93 Mich. L. Rev. 649-702 (1995).6.Stout, Lynn A. Are Stock Markets Costly Casinos? Disagreement, Mark Failure, and Securities Regulation, 81 V a. L. Rev. 611 (1995).7.Weiss, Elliott J. and John S. Beckerman Let the Money Do the Monitoring: How Institutional Investors Can Reduce Agency Costs in Securities Class Actions, 104 Y ale L.J. 2053-2127 (1995).1994年：公司法：1.Fraidin, Stephen and Hanson, Jon D. Toward Unlocking Lockups, 103 Y ale L.J. 1739-1834 (1994)2.Gordon, Jeffrey N. Institutions as Relational Investors: A New Look at Cumulative V oting, 94 Colum. L. Rev. 124-192 (1994)3.Karpoff, Jonathan M., and Lott, John R., Jr. The Reputational Penalty Firms Bear From Committing Criminal Fraud, 36 J.L. & Econ. 757-802 (1993)4.Kraakman, Reiner, Park, Hyun, and Shavell, Steven When Are Shareholder Suits in Shareholder Interests?, 82 Geo. L.J. 1733-1775 (1994)5.Mitchell, Lawrence E. Fairness and Trust in Corporate Law, 43 Duke L.J. 425- 491 (1993)6.Oesterle, Dale A. and Palmiter, Alan R. Judicial Schizophrenia in Shareholder V oting Cases, 79 Iowa L. Rev. 485-583 (1994)7. Pound, John The Rise of the Political Model of Corporate Governance and Corporate Control, 68 N.Y.U. L. Rev. 1003-1071 (1993)8.Skeel, David A., Jr. Rethinking the Line Between Corporate Law and Corporate Bankruptcy, 72 Tex. L. Rev. 471-557 (1994)9.Thompson, Robert B. Unpacking Limited Liability: Direct and V icarious Liability of Corporate Participants for Torts of the Enterprise, 47 V and. L. Rev. 1-41 (1994)证券法：1.Alexander, Janet Cooper The V alue of Bad News in Securities Class Actions, 41 UCLA L.Rev. 1421-1469 (1994)2.Bainbridge, Stephen M. Insider Trading Under the Restatement of the Law Governing Lawyers, 19 J. Corp. L. 1-40 (1993)3.Black, Bernard S. and Coffee, John C. Jr. Hail Britannia?: Institutional Investor Behavior Under Limited Regulation, 92 Mich. L. Rev. 1997-2087 (1994)4.Booth, Richard A. The Efficient Market, portfolio Theory, and the Downward Sloping Demand Hypothesis, 68 N.Y.U. L. Rev. 1187-1212 (1993)5.Coffee, John C., Jr. The SEC and the Institutional Investor: A Half-Time Report, 15 Cardozo L. Rev 837-907 (1994)6.Fox, Merritt B. Insider Trading Deterrence V ersus Managerial Incentives: A Unified Theory of Section 16(b), 92 Mich. L. Rev. 2088-2203 (1994)7.Grundfest, Joseph A. Disimplying Private Rights of Action Under the Federal Securities Laws: The Commission's Authority, 107 Harv. L. Rev. 961-1024 (1994)8.Macey, Jonathan R. Administrative Agency Obsolescence and Interest Group Formation: A Case Study of the SEC at Sixty, 15 Cardozo L. Rev. 909-949 (1994)9.Rock, Edward B. Controlling the Dark Side of Relational Investing, 15 Cardozo L. Rev. 987-1031 (1994)。

外文原文SemiconductorA semiconductor is a solid material that has electrical conductivity between those of a conductor and an insulator; it can vary over that wide range either permanently or dynamically.[1]Semiconductors are important in electronic technology. Semiconductor devices, electronic components made of semiconductor materials, are essential in modern consumer electronics, including computers, mobile phones, and digital audio players. Silicon is used to create most semiconductors commercially, but dozens of other materials are used.Bragg reflection in a diffuse latticeA second way starts with free electrons waves. When fading in an electrostatic potential due to the cores, due to Bragg reflection some waves are reflected and cannot penetrate the bulk, that is a band gap opens. In this description it is not clear, while the number of electrons fills up exactly all states below the gap.Energy level splitting due to spin state Pauli exclusionA third description starts with two atoms. The split states form a covalent bond where two electrons with spin up and spin down are mostly in between the two atoms. Adding more atoms now is supposed not to lead to splitting, but to more bonds. This is the way silicon is typically drawn. The band gap is now formed by lifting one electron from the lower electron level into the upper level. This level is known to be anti-bonding, but bulk silicon has not been seen to lose atoms as easy as electrons are wandering through it. Also this model is most unsuitable to explain how in graded hetero-junction the band gap can vary smoothly.Energy bands and electrical conductionLike in other solids, the electrons in semiconductors can have energies only within certain bands (ie. ranges of levels of energy) between the energy of the ground state, corresponding to electrons tightly bound to the atomic nuclei of the material, and the free electron energy, which is the energy required for an electron to escape entirely from the material. The energy bands each correspond to a large number of discrete quantum states of the electrons, and most of the states with low energy (closer to the nucleus) are full, up to a particular band called the valence band. Semiconductors and insulators are distinguished from metals because the valence band in the semiconductor materials is very nearly full under usual operating conditions, thus causing more electrons to be available in the conduction band.The ease with which electrons in a semiconductor can be excited from the valence band to the conduction band depends on the band gap between the bands, and it is the size of this energy bandgap that serves as an arbitrary dividing line (roughly 4 eV) between semiconductors and insulators.In the picture of covalent bonds, an electron moves by hopping to a neighboring bond. Because of the Pauli exclusion principle it has to be lifted into the higher anti-bonding state of that bond. In the picture of delocalized states, for example in one dimension that is in a wire, for every energy there is a state with electrons flowing in one direction and one state for the electrons flowing in the other. For a net current to flow some more states for one direction than for the other direction have to be occupied and for this energy is needed. For a metal this can be a very small energy in the semiconductor the next higher states lie above the band gap. Often this is stated as: full bands do not contribute to the electrical conductivity. However, as the temperature of a semiconductor rises above absolute zero, there is more energy in the semiconductor to spend on lattice vibration and — more importantly for us — on lifting some electrons into an energy states of the conduction band, which is the band immediately above the valence band. The current-carrying electrons in the conduction band are known as "free electrons", although they are often simply called "electrons" if context allows this usage to be clear.Electrons excited to the conduction band also leave behind electron holes, or unoccupied states in the valence band. Both the conduction band electrons and the valence band holes contribute to electrical conductivity. The holes themselves don't actually move, but a neighboring electron can move to fill the hole, leaving a hole at the place it has just come from, and in this way the holes appear to move, and the holes behave as if they were actual positively charged particles.One covalent bond between neighboring atoms in the solid is ten times stronger than the binding of the single electron to the atom, so freeing the electron does not imply destruction of the crystal structure.Holes: electron absence as a charge carrierThe notion of holes, which was introduced for semiconductors, can also be applied to metals, where the Fermi level lies within the conduction band. With most metals the Hall effect reveals electrons to be the charge carriers, but some metals have a mostly filled conduction band, and the Hall effect reveals positive charge carriers, which are not the ion-cores, but holes. Contrast this to some conductors like solutions of salts, or plasma. In the case of a metal, only a small amount of energy is needed for the electrons to find other unoccupied states to move into, and hence for current to flow. Sometimes even in this case it may be said that a hole was left behind, to explain why the electron does not fall back to lower energies: It cannot find a hole. In the end in both materials electron-phonon scattering and defects are the dominant causes for resistance.Fermi-Dirac distribution. States with energy εbelow the Fermi energy, here μ, have higher probability n to be occupied, and those above are less likely to be occupied. Smearing of the distribution increases with temperature.The energy distribution of the electrons determines which of the states are filled and which are empty. This distribution is described by Fermi-Dirac statistics. The distribution is characterized by the temperature of the electrons, and the Fermi energy or Fermi level. Under absolute zero conditions the Fermi energy can be thought of as the energy up to which available electron statesare occupied. At higher temperatures, the Fermi energy is the energy at which the probability of a state being occupied has fallen to 0.5.The dependence of the electron energy distribution on temperature also explains why the conductivity of a semiconductor has a strong temperature dependency, as a semiconductor operating at lower temperatures will have fewer available free electrons and holes able to do the work.Energy–momentum dispersionIn the preceding description an important fact is ignored for the sake of simplicity: the dispersion of the energy. The reason that the energies of the states are broadened into a band is that the energy depends on the value of the wave vector, or k-vector, of the electron. The k-vector, in quantum mechanics, is the representation of the momentum of a particle.The dispersion relationship determines the effective mass, m*, of electrons or holes in the semiconductor, according to the formula:The effective mass is important as it affects many of the electrical properties of the semiconductor, such as the electron or hole mobility, which in turn influences the diffusivity of the charge carriers and the electrical conductivity of the semiconductor.Typically the effective mass of electrons and holes are different. This affects the relative performance of p-channel and n-channel IGFETs, for example (Muller & Kamins 1986:427).The top of the valence band and the bottom of the conduction band might not occur at that same value of k. Materials with this situation, such as silicon and germanium, are known as indirect bandgap materials. Materials in which the band extrema are aligned in k, for example gallium arsenide, are called direct bandgap semiconductors. Direct gap semiconductors are particularly important in optoelectronics because they are much more efficient as light emitters than indirect gap materials.Carrier generation and recombinationWhen ionizing radiation strikes a semiconductor, it may excite an electron out of its energy level and consequently leave a hole. This process is known as electron–hole pair generation. Electron-hole pairs are constantly generated from thermal energy as well, in the absence of any external energy source.Electron-hole pairs are also apt to recombine. Conservation of energy demands that these recombination events, in which an electron loses an amount of energy larger than the band gap, be accompanied by the emission of thermal energy (in the form of phonons) or radiation (in the form of photons).In some states, the generation and recombination of electron–hole pairs are in equipoise. The number of electron-hole pairs in the steady state at a given temperature is determined by quantum statistical mechanics. The precise quantum mechanical mechanisms of generation and recombination are governed by conservation of energy and conservation of momentum.As the probability that electrons and holes meet together is proportional to the product of their amounts, the product is in steady state nearly constant at a given temperature, providing that there is no significant electric field (which might "flush" carriers of both types, or move them from neighbour regions containing more of them to meet together) or externally driven pair generation. The product is a function of the temperature, as the probability of getting enough thermal energy to produce a pair increases with temperature, being approximately 1×exp(−E G / kT), where k is Boltzmann's constant, T is absolute temperature and E G is band gap.The probability of meeting is increased by carrier traps – impurities or dislocations which can trap an electron or hole and hold it until a pair is completed. Such carrier traps are sometimes purposely added to reduce the time needed to reach the steady state.DopingThe property of semiconductors that makes them most useful for constructing electronic devices is that their conductivity may easily be modified by introducing impurities into their crystal lattice. The process of adding controlled impurities to a semiconductor is known as doping. The amount of impurity, or dopant, added to an intrinsic(pure) semiconductor varies its level of conductivity. Doped semiconductors are often referred to as extrinsic.DopantsThe materials chosen as suitable dopants depend on the atomic properties of both the dopant and the material to be doped. In general, dopants that produce the desired controlled changes are classified as either electron acceptors or donors. A donor atom that activates (that is, becomes incorporated into the crystal lattice) donates weakly-bound valence electrons to the material, creating excess negative charge carriers. These weakly-bound electrons can move about in the crystal lattice relatively freely and can facilitate conduction in the presence of an electric field. (The donor atoms introduce some states under, but very close to the conduction band edge. Electrons at these states can be easily excited to conduction band, becoming free electrons, at room temperature.) Conversely, an activated acceptor produces a hole. Semiconductors doped with donor impurities are called n-type, while those doped with acceptor impurities are known as p-type. The n and p type designations indicate which charge carrier acts as the material's majority carrier. The opposite carrier is called the minority carrier, which exists due to thermal excitation at a much lower concentration compared to the majority carrier.For example, the pure semiconductor silicon has four valence electrons. In silicon, the most common dopants are IUPAC group 13(commonly known as group III) and group 15(commonly known as group V) elements. Group 13 elements all contain three valence electrons, causing them to function as acceptors when used to dope silicon. Group 15 elements have five valence electrons, which allows them to act as a donor. Therefore, a siliconcrystal doped with boron creates a p-type semiconductor whereas one doped with phosphorus results in an n-type material.Carrier concentrationThe concentration of dopant introduced to an intrinsic semiconductor determines its concentration and indirectly affects many of its electrical properties. The most important factor that doping directly affects is the material's carrier concentration. In an intrinsic semiconductor under thermal equilibrium, the concentration of electrons and holes is equivalent. That is,n = p = n iIf we have a non-intrinsic semiconductor in thermal equilibrium the relation becomes:n0 * p0 = (n i)2Where n is the concentration of conducting electrons, p is the electron hole concentration, and n i is the material's intrinsic carrier concentration. Intrinsic carrier concentration varies between materials and is dependent on temperature. Silicon's n i, for example, is roughly 1.6×1010 cm-3 at 300 kelvin (room temperature).In general, an increase in doping concentration affords an increase in conductivity due to the higher concentration of carriers available for conduction. Degenerately (very highly) doped semiconductors have conductivity levels comparable to metals and are often used in modern integrated circuits as a replacement for metal. Often superscript plus and minus symbols are used to denote relative doping concentration in semiconductors. For example, n+ denotes an n-type semiconductor with a high, often degenerate, doping concentration. Similarly, p−would indicate a very lightly doped p-type material. It is useful to note that even degenerate levels of doping imply low concentrations of impurities with respect to the base semiconductor. In crystalline intrinsic silicon, there are approximately 5×1022 atoms/cm³. Doping concentration for silicon semiconductors may range anywhere from 1013 cm-3to 1018cm-3. Doping concentration above about 1018cm-3is considered degenerate at room temperature. Degenerately doped silicon contains a proportion of impurity to silicon in the order of parts per thousand. This proportion may be reduced to parts per billion in very lightly doped silicon. Typical concentration values fall somewhere in this range and are tailored to produce the desired properties in the device that the semiconductor is intended for.Effect on band structureDoping a semiconductor crystal introduces allowed energy states within the band gap but very close to the energy band that corresponds with the dopant type. In other words, donor impurities create states near the conduction band while acceptors create states near the valence band. The gap between these energy states and the nearest energy band is usually referred to as dopant-site bonding energy or E B and is relatively small. For example, the E B for boron in silicon bulk is 0.045 eV, compared with silicon's band gap of about 1.12 eV. Because E B is so small, it takes little energy to ionize the dopant atoms and create free carriers in the conduction or valence bands.Usually the thermal energy available at room temperature is sufficient to ionize most of the dopant.Dopants also have the important effect of shifting the material's Fermi level towards the energy band that corresponds with the dopant with the greatest concentration. Since the Fermi level must remain constant in a system in thermodynamic equilibrium, stacking layers of materials with different properties leads to many useful electrical properties. For example, the p-n junction's properties are due to the energy band bending that happens as a result of lining up the Fermi levels in contacting regions of p-type and n-type material.This effect is shown in a band diagram. The band diagram typically indicates the variation in the valence band and conduction band edges versus some spatial dimension, often denoted x. The Fermi energy is also usually indicated in the diagram. Sometimes the intrinsic Fermi energy, E i, which is the Fermi level in the absence of doping, is shown. These diagrams are useful in explaining the operation of many kinds of semiconductor devices.Preparation of semiconductor materialsSemiconductors with predictable, reliable electronic properties are necessary for mass production. The level of chemical purity needed is extremely high because the presence of impurities even in very small proportions can have large effects on the properties of the material. A high degree of crystalline perfection is also required, since faults in crystal structure (such as dislocations, twins, and stacking faults) interfere with the semiconducting properties of the material. Crystalline faults are a major cause of defective semiconductor devices. The larger the crystal, the more difficult it is to achieve the necessary perfection. Current mass production processes use crystal ingots between four and twelve inches (300 mm) in diameter which are grown as cylinders and sliced into wafers.Because of the required level of chemical purity and the perfection of the crystal structure which are needed to make semiconductor devices, special methods have been developed to produce the initial semiconductor material. A technique for achieving high purity includes growing the crystal using the Czochralski process. An additional step that can be used to further increase purity is known as zone refining. In zone refining, part of a solid crystal is melted. The impurities tend to concentrate in the melted region, while the desired material recrystalizes leaving the solid material more pure and with fewer crystalline faults.In manufacturing semiconductor devices involving heterojunctions between different semiconductor materials, the lattice constant, which is the length of the repeating element of the crystal structure, is important for determining the compatibility of materials.中文译文半导体半导体是一种导电性能介于导体与绝缘体之间的固体材料。

此表可供快速查询球员对应的面补ID号码由于所用名单的不同，球员编号可能有所不同，但并不影响对应面补ID使用ctrl+f快速查找球员以免去REDitor的操作不便球员编号球员姓名对应面补ID0 Williams Louis 13071 Iguodala Andre 11582 Y oung Thaddeus 14213 Brand Elton 5504 Dalembert Samuel 8265 Speights Marreese 15226 Kapono Jason 10437 Green Willie 11488 Holiday Jrue 16079 Carney Rodney 134910 Ivey Royal 125411 Brezec Primoz 88612 Smith Jason 142913 Felton Raymond 126014 Bell Raja 82815 Wallace Gerald 83416 Diaw Boris 103317 Chandler Tyson 80118 Augustin D.J. 151519 Radmanovic Vladimir 81320 Diop DeSagana 81021 Murray Flip 114122 Henderson Gerald 161623 Mohammed Nazr 33624 Ajinca Alexis 157325 Brown Derrick 162926 Jefferson Dontell 159427 Ridnour Luke 102628 Redd Michael 83729 Mbah a Moute Luc Richard 153930 Warrick Hakim 127431 Bogut Andrew 125632 Delfino Carlos 120933 Jennings Brandon 160835 Thomas Kurt 13536 Bell Charlie 131037 Gadzuric Dan 93338 Meeks Jodie 164939 Ukic Roko 155340 Elson Francisco 113741 Sharpe Walter 153642 Rose Derrick 150743 Salmons John 92644 Deng Luol 115645 Thomas Tyrus 133746 Noah Joakim 141847 Miller Brad 49748 Hinrich Kirk 101949 Pargo Jannero 99350 Johnson James 160951 Gray Aaron 154952 Hunter Lindsey 28453 Gibson Taj 163854 James Jerome 88855 Williams Mo 113256 West Delonte 117357 James LeBron 101358 V arejao Anderson 117959 O'Neal Shaquille 20160 Ilgauskas Zydrunas 6761 Parker Anthony 136462 Moon Jamario 146963 Gibson Daniel 136264 Powe Leon 137665 Jackson Darnell 157966 Green Daniel 165267 Williams Jawad 158068 Hickson J.J. 152569 Rondo Rajon 135470 Allen Ray 1371 Pierce Paul 39272 Garnett Kevin 36573 Perkins Kendrick 103974 Wallace Rasheed 38975 Davis Glen 144376 Daniels Marquis 113577 House Eddie 65579 Williams Shelden 133880 Scalabrine Brian 113681 Walker Bill 154282 Giddens J.R. 153583 Davis Baron 58984 Gordon Eric 151385 Thornton Al 142386 Griffin Blake 160087 Kaman Chris 101888 Camby Marcus 29589 Telfair Sebastian 116290 Butler Rasual 93791 Jordan DeAndre 153892 Davis Ricky 13893 Smith Craig 144894 Skinner Brian 44395 Collins Mardy 138296 Conley Michael 141397 Mayo O.J. 150998 Gay Rudy 134199 Randolph Zach 822 100 Gasol Marc 1548101 Iverson Allen 5102 Arthur Darrell 1532 103 Thabeet Hasheem 1602 104 Jaric Marko 987105 Y oung Sam 1623106 Carroll DeMarre 1639 107 Hunter Steven 824 108 Haddadi Hamed 1559 109 Bibby Mike 59110 Johnson Joe 807111 Williams Marvin 1257 112 Smith Josh 1166113 Horford Al 1412114 Crawford Jamal 631 115 Pachulia Zaza 1134 116 Evans Maurice 1204 117 Smith Joe 402118 Teague Jeff 1617119 Collins Jason 823120 Morris Randolph 1560 121 Chalmers Mario 1526122 Wade Dwyane 1017 123 Beasley Michael 1508 124 Haslem Udonis 1118 125 O'Neal Jermaine 393 126 Richardson Quentin 642 127 Jones James 1205128 Anthony Joel 1583129 Cook Daequan 1430 130 Quinn Chris 1502131 Diawara Y akhouba 1384 132 Magloire Jamaal 643 133 Wright Dorell 1168 134 Paul Chris 1259135 Posey James 576136 Stojakovic Peja 450 137 West David 1030138 Okafor Emeka 1151 139 Wright Julian 1422140 Armstrong Hilton 1345 141 Brown Devin 1149142 Marks Sean 316143 Songaila Darius 1133 144 Collison Darren 1622 145 Diogu Ike 1264146 Brown Bobby 1571 147 Thornton Marcus 1651 148 Peterson Morris 645 149 Williams Deron 1258 150 Brewer Ronnie 1347 151 Miles C.J. 1299152 Boozer Carlos 934153 Okur Mehmet 992154 Kirilenko Andrei 847 155 Millsap Paul 1379156 Korver Kyle 1126157 Price Ronnie 1381158 Maynor Eric 1613159 Fesenko Kyrylo 1445 160 Koufos Kosta 1529 161 Harpring Matt 232162 Udrih Beno 1177163 Martin Kevin 1175164 Nocioni Andres 1203 165 Thompson Jason 1518166 Hawes Spencer 1419 167 Evans Tyreke 1606 168 Garcia Francisco 1278 169 May Sean 1268170 Rodriguez Sergio 1375 171 Mason Desmond 641 172 Greene Donte 1533 173 Casspi Omri 1636 174 Thomas Kenny 553 175 Brockman Jon 1647 176 Duhon Chris 1252 177 Chandler Wilson 1432 178 Harrington Al 237 179 Jeffries Jared 911180 Lee David 1285181 Robinson Nate 1276 182 Hughes Larry 256 183 Milicic Darko 1014 184 Hill Jordan 1604185 Gallinari Danilo 1512 186 Douglas Toney 1641 187 Curry Eddy 803188 Sun Y ue 1566189 Fisher Derek 198190 Bryant Kobe 195191 Artest Ron 573192 Gasol Pau 809193 Bynum Andrew 1265 194 Odom Lamar 564 195 Farmar Jordan 1359 196 Walton Luke 1044 197 V ujacic Sasha 1176 198 Brown Shannon 1358 199 Powell Josh 1499200 Morrison Adam 1336 201 Mbenga DJ 1207202 Nelson Jameer 1169 203 Carter V ince 110204 Lewis Rashard 275 205 Bass Brandon 1288 206 Howard Dwight 1150 207 Pietrus Mickael 1023 208 Gortat Marcin 1585 209 Johnson Anthony 449210 Barnes Matt 1194211 Anderson Ryan 1527212 Redick J.J. 1344213 Williams Jason 468214 Foyle Adonal 418215 Kidd Jason 226216 Howard Josh 1041217 Marion Shawn 568218 Nowitzki Dirk 349219 Dampier Erick 268220 Terry Jason 600221 Gooden Drew 904222 Barea J.J. 1550223 Ross Quinton 1197224 Thomas Tim 417225 Singleton James 1305226 Humphries Kris 1163227 Carroll Matt 1309228 Williams Shawne 1350229 Jawai Nathan 1558230 Harris Devin 1154231 Lee Courtney 1528232 Simmons Bobby 1130233 Yi Jianlian 1415234 Lopez Brook 1516235 Dooling Keyon 634236 Hayes Jarvis 1022237 Alston Rafer 619238 Boone Josh 1356239 Williams Terrence 1618 240 Douglas-Roberts Chris 1541 241 Hassell Trenton 896242 Battie Tony 415243 Williams Sean 1426244 Najera Eduardo 838245 Billups Chauncey 413246 Smith J.R. 1167247 Anthony Carmelo 1015 248 Martin Kenyon 625249 Nenê 907250 Andersen Chris 984251 Balkman Renaldo 1353 252 Carter Anthony 6253 Afflalo Arron 1436254 Lawson Ty 1615255 Allen Malik 982256 Petro Johan 1280257 White James 1409258 Ford T.J. 1020259 Dunleavy Mike 903 260 Granger Danny 1272 261 Murphy Troy 808262 Hibbert Roy 1523263 Jones Dahntay 1032 264 Foster Jeff 557265 Rush Brandon 1519 266 Watson Earl 845267 Hansbrough Tyler 1624 268 McRoberts Josh 1444 269 Diener Travis 1291 270 Jones Solomon 1453 271 Price A.J. 1658272 Stuckey Rodney 1424 273 Hamilton Richard 579 274 Prince Tayshaun 923 275 V illanueva Charlie 1262 276 Wilcox Chris 908277 Gordon Ben 1152278 Maxiell Jason 1281 279 Wallace Ben 35280 Bynum Will 1562281 Brown Kwame 800 282 Daye Austin 1619283 Summers DaJuan 1625 284 Jerebko Jonas 1648 285 Calderon Jose 1317 286 Belinelli Marco 1427 287 Turkoglu Hedo 640 288 Bosh Chris 1016289 Bargnani Andrea 1334 290 Jack Jarrett 1277291 DeRozan DeMar 1605 292 Johnson Amir 1452 293 Nesterovic Rasho 345 294 Wright Antoine 1270 295 Evans Reggie 1143 296 Weems Sonny 1568 297 O'Bryant Patrick 1342298 Douby Quincy 1352299 Banks Marcus 1025300 Brooks Aaron 1435301 McGrady Tracy 419302 Ariza Trevor 1206303 Scola Luis 1451304 Y ao Ming 901305 Battier Shane 802306 Landry Carl 1440307 Lowry Kyle 1357308 Andersen David 1693 309 Hayes Chuck 1386310 Barry Brent 96311 Taylor Jermaine 1644 312 Budinger Chase 1626 313 Dorsey Joey 1537314 Mensah-Bonsu Pops 1592 315 Parker Tony 839316 Mason Roger 930317 Jefferson Richard 816 318 McDyess Antonio 257 319 Duncan Tim 411320 Ginobili Manu 970321 Bonner Matt 1318322 Hill George 1531323 Finley Michael 353324 Blair DeJuan 1611325 Ratliff Theo 288326 Bogans Keith 1049327 Hairston Malik 1543328 Mahinmi Ian 1557329 Nash Steve 358330 Richardson Jason 805 331 Hill Grant 283332 Stoudemire Amar'e 909 333 Lopez Robin 1521334 Barbosa Leandro 1040 335 Frye Channing 1263336 Amundson Louis 1575 337 Dragic Goran 1555338 Clark Earl 1610339 Dudley Jared 1431340 Griffin Taylor 1654341 Tucker Alando 1438342 Westbrook Russell 1510 343 Harden James 1603 344 Durant Kevin 1411345 Green Jeff 1414346 Krstic Nenad 1588347 Thomas Etan 636348 Sefolosha Thabo 1346 349 Collison Nick 1024350 Livingston Shaun 1153 351 Weaver Kyle 1540352 Mullens B.J. 1620353 Ollie Kevin 66354 White D.J. 1534355 Sessions Ramon 1498 356 Wilkins Damien 1303 357 Gomes Ryan 1297358 Love Kevin 1511359 Jefferson Al 1164360 Brewer Corey 1416 361 Ellington Wayne 1614 362 Flynn Jonny 1614363 Cardinal Brian 1145 364 Daniels Antonio 414 365 Hollins Ryan 1501366 Pavlovic Sasha 1031 367 Blount Mark 833368 Pecherov Oleksiy 1351 369 Miller Andre 597370 Roy Brandon 1339371 Batum Nicolas 1530 372 Aldridge LaMarcus 1335 373 Oden Greg 1410374 Outlaw Travis 1035 375 Fernandez Rudy 1433 376 Przybilla Joel 633377 Blake Steve 1048378 Bayless Jerryd 1517 379 Webster Martell 1261 380 Howard Juwan 31381 Pendergraph Jeff 1643 382 Ellis Monta 1292383 Curry Stephen 1612 384 Jackson Stephen 93 385 Randolph Anthony 1520386 Biedrins Andris 1160 387 Maggette Corey 567 388 Turiaf Ronny 1290389 Azubuike Kelenna 1450 390 Wright Brandan 1417 391 Moore Mikki 616392 Watson C.J. 1503393 Law Acie 1420394 George Devean 590 395 Morrow Anthony 1574 396 Claxton Speedy 644 397 Arenas Gilbert 821398 Miller Mike 629399 Butler Caron 910400 Jamison Antawn 262 401 Haywood Brendan 818 402 Blatche Andray 1296 403 Foye Randy 1340404 McGee JaV ale 1524 405 Y oung Nick 1425406 McGuire Dominic 1468 407 Oberto Fabricio 1304 408 Stevenson DeShawn 647 409 Crittenton Javaris 1428 410 James Mike 991411 Cousy Bob 734412 Robertson Oscar 733 413 Baylor Elgin 732414 Russell Bill 730415 Chamberlain Wilt 752 416 Havlicek John 735417 Pettit Bob 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Chambers Tom 775467 Blackman Rolando 1486 468 McDaniel Xavier 879469 Cooper Michael 880470 Theus Reggie 784471 Hardaway Tim 129472 Rice Glen 949473 Pippen Scottie 942474 Mourning Alonzo 946 475 O'Neal Shaquille 948 476 Wilkins Dominique 1321 477 Ewing Patrick 940478 Hill Grant 941479 Smith Steve 951480 Dumars Joe 1213481 Johnson Larry 1393 482 Rodman Dennis 1485 483 Kidd Jason 963484 Drexler Clyde 955485 Mullin Chris 1146486 Olajuwon Hakeem 952 487 O'Neal Shaquille 1183 488 Malone Karl 159489 Johnson Kevin 1101 490 Richmond Mitch 174 491 Robinson David 959 492 Majerle Dan 1215493 Schrempf Detlef 1217 494 Hornacek Jeff 157495 Lam Bryan 1599496 Sapida Jerson 1494498 Unsworth Tor 1487497 Iwahashi Jay 1598499 Lee Shawn 1595500 Rivas Randy 1489501 Jones Rhys 1488502 Hamre Matt 503503 Rothaug Justin 1491 504 Jackson Rick 1490505 Peacock Larry 706506 Y ang Johnnie 509507 Gatson Rob 869508 Boucher Grayson 1484 509 Timmerman Zach 1493 510 Schroeder Tim 1403 511 Boenisch Erick 1402 512 Jones Rob 1243513 Peete Dion 1396514 Park Steve 1497515 Townsend Matt 1369 516 Townsend Brian 1368 517 Anderson Thomas 1404518 Darroca Chris 1630519 Copelovici David 1367 520 Marrinson Nat 602521 Cardona Alvin 865522 Lai-Fatt Kyle 666523 Jinks Lynell 976524 Thomas Greg 504525 Lee David 974526 Gregory Jonathan 1370 527 Myers Ivan 1597528 Tse Roy 1248529 Fok Herman 1400530 Jones Nick 709531 Lukas Nikki 1632532 Kaneko Quinn 853533 Zheng Ying 1477534 Bares Julien 1472535 Su Lu 1591536 Liu Leny 1475537 Liu Jing 1474538 Xu Xiao Qiang 1476539 Sun Ting 1480540 Liu Tao 1481541 Xu Jie 1482542 Fang Zhen 1483543 Alvarez Isaac 1677544 Lopez Jose 1678545 Hurd John 1679546 Stephenson Hassan 1680 547 Richards Darrell 1681 548 Jackson Christopher 1682 549 Negron Luis 1683550 Taylor Jayceon 1684551 Quarus Danny 1685552 Lee Jay 1686553 Ferguson Asa 1687554 Abdul-Karim Ammer 1688 555 Johnson Ikeem 1689556 Malheur Andy 1690557 Boyd Adam 1691558 Mohammed Mahad 1692 963 Acker Alex 1576964 Adams Hassan 1408965 Ager Maurice 1361966 Almond Morris 1434 967 Atkins Chucky 615968 Augustine James 1462 969 Baston Maceo 1581 970 Booth Calvin 547971 Bowen Ryan 1584972 Brown Andre 1572973 Brown Dee 1380974 Buckner Greg 583975 Butler Jackie 1391976 Byars Derrick 1446 977 Collins Jarron 966978 Davidson Jermareo 1500 979 Davis Paul 1465980 Dixon Juan 917981 Dupree Ronald 1129 982 Ely Melvin 912983 Ewing Daniel 1287984 Ewing Jr Patrick 1556 985 Farmer Desmon 1570 986 Fazekas Nick 1442987 Francis Steve 578988 Gardner Thomas 1577 989 Gelabale Mickael 1390 990 Graham Joey 1271991 Graham Stephen 1582 992 Green Gerald 1273993 Greene Orien 1311994 Greer Lynn 1463995 Ha Seung-Jin 1181996 Hardin DeV on 1545 997 Harrison David 1178 998 Hart Jason 1144999 Head Luther 1279 1000 Hendrix Richard 1544 1001 Herrmann Walter 1454 1002 Hill Steven 1586 1003 Hodge Julius 1275 1004 Hunter Othello 1578 1005 Ilyasova Ersan 1289 1006 Jackson Bobby 433 1007 Jackson Luke 1159 1008 Johnson DerMarr 630 1009 Johnson Linton 13781010 Johnson Trey 1593 1011 Jones Bobby 1394 1012 Jones Damon 301013 Jones Dwayne 1505 1014 Jones Fred 9141015 Jordan Jared 1447 1016 Karl Coby 15061017 Khryapa Viktor 1171 1018 Kinsey Tarence 1406 1019 Knight Brevin 426 1020 Kurz Rob 15871021 LaFrentz Raef 266 1022 Lucas John 13891023 Lue Tyronn 3031024 Madsen Mark 652 1025 Marbury Stephon 369 1026 Marshall Donyell 397 1027 Martin Cartier 1589 1028 McCants Rashad 1269 1029 McLeod Keith 1212 1030 Mihm Chris 6321031 Miles Darius 6271032 Nelson DeMarcus 1563 1033 Nichols Demetris 1561 1034 Noel David 14491035 Novak Steve 1388 1036 Parker Smush 988 1037 Pruitt Gabe 14411038 Randolph Shavlik 1308 1039 Ray Allan 14051040 Reed Justin 12531041 Richardson Jeremy 1504 1042 Roberson Anthony 1567 1043 Roberts Lawrence 1003 1044 Rose Malik 10041045 Ruffin Michael 1005 1046 Rush Kareem 1006 1047 Samb Cheikh 1007 1048 Sampson Jamal 1008 1049 Sene Mouhamed 1009 1050 Simmons Cedric 1010 1051 Singletary Sean 1011 1052 Snyder Kirk 1012 1053 Solomon Will 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Perkinson Jason 5116 1190 Jones Phil 51171191 Jackson Gary 5000 1192 Baker Alan 5001 1193 Johnson Lance 5002 1194 Adams Kenny 5003 1195 Davidson Clay 5004 1196 Green Andy 5005 1197 Hale Don 50061198 Malone Bobby 5007 1199 Norris Jeff 5008 1200 Hobbs Bryan 5009 1201 Rose Will 51201202 Jennings Chris 5121 1203 Atkins Peter 5122 1205 Harris Gordon 5124 1206 Perry David 5125 1207 Ford Randy 5126 1208 Monroe Edward 5127 1209 Y oung Carl 5128 1210 Russell Tim 5129 1211 Stokes Howard 5132 1212 Best Richard 5133 1213 Gooding Michael 5134 1214 Porter Damon 5135 1215 Hamilton Tony 5136 1216 Morris Joe 5137 1217 Carter Wes 5138 1218 Hunter Ron 5139 1219 Foster Dave 5140 1220 Lloyd Thomas 5141 1221 Hayes Chris 5144 1222 Rush Matt 5145 1223 Jones Ralph 5146 1224 Holt Patrick 5147 1225 Smith Nelson 5148 1226 Brooks Alvin 5149 1227 Strong Rob 5150 1228 Dailey Greg 5151 1229 Morrison Pete 5152 1230 Cook Drew 51531231 James Kyle 5156 1232 Ryan Jeremy 5157 1233 Banks Eddie 5158 1234 Tate Charles 5159 1235 Hicks Dan 5160 1236 Drew Jimmy 5161 1237 Powell Hugh 5162 1238 Myers Barry 5163 1239 Beck Joe 51641240 Thomas Gabe 5165 1241 Price Jesse 5168 1242 Evans Darryl 5169 1243 Jacobs Ed 5170 1244 Cross Grant 5171 1245 Ramsey Brian 5172 1246 Barnes Jon 5173 1247 Lucas James 5174 1248 Neal Dwight 5175 1249 Sampson Andre 5176 1250 Gordon Jared 5177 1251 Jefferson Kevin 5180 1252 Nicholson Mike 5181 1253 Clark Andrew 5182 1254 Harrison Frank 5183 1255 Ellis Pat 51841256 Graham Ben 5185 1257 Barry Steven 5186 1258 Mack Darren 5187 1259 Faulk Chad 5188 1260 Henry Brian 5189。

龚昌德教授简历1953年毕业于复旦大学物理系，1953年9月至1955年1月在华东水利学院任教。

1955年1月以后至今在南京大学物理系工作，1978 – 1981 年任副教授， 1981年任南京大学物理系教授，同年获国务院学位委员会通过我国首批博士生导师，1986－1993 年任南京大学物理系系主任，1994年至今任南京大学理学院院长，理论物理研究中心主任。

2005年当选为中国科学院数理学部院士。

从事的研究领域主要有：强关联电子系，超导物理，低维物理，光与低维固体相互作用，介观物理等。

主持项目和获奖情况：1978年因“超导物理研究”获“全国科学大会奖”；1982年，因“超导体临界温度”的研究成果获得国家自然科学奖；1984年获得首批“国家级有突出贡献中青年专家”；1985年主持国家基金项目“低维系统相变及元激发研究”；1987年主持国家重点基金项目“量子超细微粒的物理研究”1988年所著“热力学与统计物理学”获得国家教委高等学校优秀教材一等奖；1990年因“光与低维固体相互作用”的研究成果获得国家教委科技进步二等奖；1990年享受国务院政府特殊津贴；1992年因“低维系统中的相变元激发”的研究成果获得国家教委科技进步二等奖；1992年任理论物理攀登项目“九十年代理论物理重大前沿课题”专家组成员，强关联电子系统子课题组组长；1993年主持国家“863”超导项目中基础研究部分；1996年获得江苏省高等学校“红杉树”园丁奖金奖；1997年因“凝聚态物理学高层次人才培养与实践”获得国家级教学成果一等奖；1997年获得“宝钢优秀教师奖”。

1998年合作项目“介观环的持续电流及其电子输运性质”被广东省科技委列为1998年广东省重大科技研究成果。

曾任学术职务：1982年被推选为全国凝聚态理论及统计物理专业委员会领导小组成员；1985年起历任二、三、四届国务院学位委员会学科组成员1986年受聘为李政道中国高科技中心首批特别成员；1986年任江苏省物理学会理事长；1987年受聘为意大利国际理论物理中心(ICTP)协联教授；1990年任国家教委首届“物理学教学指导委员会”委员；1992年江苏省自然科学基金委员会首届委员；1992年受聘为国际核心期刊“J. Low. Temp. Phys.” 编委；1993年任国家普通高校优秀教学成果评审委员会委员；1995－1999中国物理学会常务理事1995年任江苏省青年科技奖专家评审委员会副主任；1995年任国家教委第二届“高等学校理科物理学与天文学教学指导委员会”副主任委员；1997年度香港中文大学杨振宁访问教授位置。