EWTS86K中文资料

台湾EZ-LINK K8/16 IP 8/16口数字KVM控制器产品资料
产品特点：
• 1数字用户、1本地用户控制8/16台服务器
•从任意地点远程访问KVM,控制电脑和服务器
•以色列MINICOM公司IP模块
• 支持BIOS基本输出输入
• 高品质画面以及鼠标实时同步功能
• 安全性, 128位SSL数据加密系统
• 远程串口控制电源切换器,路由器,以及其他设备
•支持多平台：PS/2或USB
• 1U机架式设计，方便安装
产品功能：
本地或远程访问服务器
IP K8/16可以帮助系统管理者在安全状态下，对8/16台服务器进行本地或远程的BIOS等级访问。

创新的，机架式，1U高。

BL专用KVM线缆避免机柜中出现线材杂乱现象，可以IP K16直接控制机柜中每台服务器，服务器与KVM切换器之间最远距离可以达到10m。

从独立的机柜到全球分散式数据中心
对于大型应用机房，比如全球分散式数据中心或机房，IP K8/16 可以在Minicom' 集中系统下管理所有设备-不但可以满足当今市场对多功能，高品质KVM切换器的要求，而且是未来集中式机房管理的发展趋势。

工业安全标准
支持工业最高安全加密，128-bit SSL协议，保证你公司的数据远离各类网络安全漏洞和黑客袭击。

BIOS等级，多平台访问
作为一个优秀的解决方案，IP K8/16可以让您通过BIOS直接访问，并控制多平台服务器，包括PS/2 和USB设备。

系统拓扑图
规格表。

1/31August 2004M93C86, M93C76, M93C66M93C56, M93C4616Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide)MICROWIRE® Serial Access EEPROMFEATURES SUMMARYs Industry Standard MICROWIRE Bus sSingle Supply Voltage:– 4.5 to 5.5V for M93Cx6– 2.5 to 5.5V for M93Cx6-W – 1.8 to 5.5V for M93Cx6-Rs Dual Organization: by Word (x16) or Byte (x8) s Programming Instructions that work on: Byte, Word or Entire Memorys Self-timed Programming Cycle with Auto-Erases Ready/Busy Signal During Programming sSpeed:–1MHz Clock Rate, 10ms Write Time(Current product, identified by process identification letter F or M)–2MHz Clock Rate, 5ms Write Time (NewProduct, identified by process identification letter W or G or S) s Sequential Read Operations Enhanced ESD/Latch-Up Behaviour s More than 1 Million Erase/Write Cycles sMore than 40 Year Data RetentionTable 1. Product ListReferencePart Number ReferencePart Number M93C86M93C86M93C56M93C56M93C86-W M93C56-W M93C86-R M93C56-R M93C76M93C76M93C46M93C46M93C76-W M93C46-W M93C76-R M93C46-RM93C66M93C66M93C66-W M93C66-RM93C86, M93C76, M93C66, M93C56, M93C46TABLE OF CONTENTSFEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1Table 1.Product List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Figure 1.Packages. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Figure 2.Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Table 2.Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Table 3.Memory Size versus Organization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Table 4.Instruction Set for the M93Cx6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Figure 3.DIP, SO, TSSOP and MLP Connections (Top View). . . . . . . . . . . . . . . . . . . . . . . . . . . . .5MEMORY ORGANIZATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 POWER-ON DATA PROTECTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..5INSTRUCTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6Table 5.Instruction Set for the M93C46 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Table 6.Instruction Set for the M93C56 and M93C66 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Table 7.Instruction Set for the M93C76 and M93C86 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Erase/Write Enable and Disable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Figure 4.READ, WRITE, EWEN, EWDS Sequences. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Erase. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Figure 5.ERASE, ERAL Sequences . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Erase All. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Write All . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Figure 6.WRAL Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10READY/BUSY STATUS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 COMMON I/O OPERATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11CLOCK PULSE COUNTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Figure 7.Write Sequence with One Clock Glitch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Table 8.Absolute Maximum Ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12DC AND AC PARAMETERS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Table 9.Operating Conditions (M93Cx6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Table 10.Operating Conditions (M93Cx6-W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Table 11.Operating Conditions (M93Cx6-R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Table 12.AC Measurement Conditions (M93Cx6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Table 13.AC Measurement Conditions (M93Cx6-W and M93Cx6-R) . . . . . . . . . . . . . . . . . . . . . .14 Figure 8.AC Testing Input Output Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .142/31M93C86, M93C76, M93C66, M93C56, M93C46Table 14.Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Table 15.DC Characteristics (M93Cx6, Device Grade 6). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Table 16.DC Characteristics (M93Cx6, Device Grade 7 or 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Table 17.DC Characteristics (M93Cx6-W, Device Grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Table 18.DC Characteristics (M93Cx6-W, Device Grade 7 or 3). . . . . . . . . . . . . . . . . . . . . . . . . .17 Table 19.DC Characteristics (M93Cx6-R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Table 20.AC Characteristics (M93Cx6, Device Grade 6, 7 or 3) . . . . . . . . . . . . . . . . . . . . . . . . . .18 Table 21.AC Characteristics (M93Cx6-W, Device Grade 6). . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 Table 22.AC Characteristics (M93Cx6-W, Device Grade 7 or 3). . . . . . . . . . . . . . . . . . . . . . . . . .20 Table 23.AC Characteristics (M93Cx6-R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 Figure 9.Synchronous Timing (Start and Op-Code Input). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 Figure 10.Synchronous Timing (Read or Write) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 Figure 11.Synchronous Timing (Read or Write) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23Figure 12.PDIP8 – 8 pin Plastic DIP, 0.25mm lead frame, Package Outline . . . . . . . . . . . . . . . . .23 Table 24.PDIP8 – 8 pin Plastic DIP, 0.25mm lead frame, Package Mechanical Data. . . . . . . . . .23 Figure 13.SO8 narrow – 8 lead Plastic Small Outline, 150 mils body width, Package Outline . . . .24 Table 25.SO8 narrow – 8 lead Plastic Small Outline, 150 mils body width, Package Mechanical Data 24Figure 14.UFDFPN8 (MLP8) 8-lead Ultra thin Fine pitch Dual Flat Package No lead 2x3mm², Outline 25Table 26.UFDFPN8 (MLP8) 8-lead Ultra thin Fine pitch Dual Flat Package No lead 2x3mm², Data.25Figure 15.TSSOP8 3x3mm²– 8 lead Thin Shrink Small Outline, 3x3mm² body size, Package Outline 26Table 27.TSSOP8 3x3mm²– 8 lead Thin Shrink Small Outline, 3x3mm² body size, Mechanical Data 26Figure 16.TSSOP8 – 8 lead Thin Shrink Small Outline, Package Outline . . . . . . . . . . . . . . . . . . .27 Table 28.TSSOP8 – 8 lead Thin Shrink Small Outline, Package Mechanical Data. . . . . . . . . . . .27PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28 Table 29.Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28 Table 30.How to Identify Current and New Products by the Process Identification Letter. . . . . . .29REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30 Table 31.Document Revision History. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .303/31M93C86, M93C76, M93C66, M93C56, M93C464/31SUMMARY DESCRIPTIONThese electrically erasable programmable memo-ry (EEPROM) devices are accessed through a Se-rial Data Input (D) and Serial Data Output (Q)using the MICROWIRE bus protocol.Table 2. Signal NamesThe memory array organization may be divided into either bytes (x8) or words (x16) which may be selected by a signal applied on Organization Se-lect (ORG). The bit, byte and word sizes of the memories are as shown in Table 3..Table 3. Memory Size versus OrganizationThe M93Cx6 is accessed by a set of instructions,as summarized in Table 4., and in more detail in Table 5. to Table 7.).Table 4. Instruction Set for the M93Cx6A Read Data from Memory (READ) instruction loads the address of the first byte or word to be read in an internal address register. The data at this address is then clocked out serially. The ad-dress register is automatically incremented after the data is output and, if Chip Select Input (S) is held High, the M93Cx6 can output a sequential stream of data bytes or words. In this way, the memory can be read as a data stream from eight to 16384 bits long (in the case of the M93C86), or continuously (the address counter automatically rolls over to 00h when the highest address is reached).Programming is internally self-timed (the external clock signal on Serial Clock (C) may be stopped or left running after the start of a Write cycle) and does not require an Erase cycle prior to the Write instruction. The Write instruction writes 8 or 16 bits at a time into one of the byte or word locations of the M93Cx6. After the start of the programming cy-cle, a Busy/Ready signal is available on Serial Data Output (Q) when Chip Select Input (S) is driv-en High.S Chip Select Input D Serial Data Input Q Serial Data Output C Serial Clock ORG Organisation Select V CC Supply Voltage V SSGroundDevice Number of Bits Number of 8-bit Bytes Number of 16-bit Words M93C861638420481024M93C7681921024512M93C664096512256M93C562048256128M93C46102412864Instruction Description Data READ Read Data from Memory Byte or Word WRITEWrite Data to Memory Byte or WordEWEN Erase/Write Enable EWDS Erase/Write Disable ERASE Erase Byte or Word Byte or WordERAL Erase All Memory WRALWrite All Memory with same DataM93C86, M93C76, M93C66, M93C56, M93C46An internal Power-on Data Protection mechanism in the M93Cx6 inhibits the device when the supply is too low.Figure 3. DIP, SO, TSSOP and MLPNote: 1.See PACKAGE MECHANICAL section for package di-mensions, and how to identify pin-1.2.DU = Don’t Use.The DU (Don’t Use) pin does not contribute to the normal operation of the device. It is reserved for use by STMicroelectronics during test sequences. The pin may be left unconnected or may be con-nected to V CC or V SS. Direct connection of DU to V SS is recommended for the lowest stand-by pow-er consumption.MEMORY ORGANIZATIONThe M93Cx6 memory is organized either as bytes (x8) or as words (x16). If Organization Select (ORG) is left unconnected (or connected to V CC) the x16 organization is selected; when Organiza-tion Select (ORG) is connected to Ground (V SS) the x8 organization is selected. When the M93Cx6 is in stand-by mode, Organization Select (ORG) should be set either to V SS or V CC for minimum power consumption. Any voltage between V SS and V CC applied to Organization Select (ORG) may increase the stand-by current.POWER-ON DATA PROTECTIONTo prevent data corruption and inadvertent write operations during power-up, a Power-On Reset (POR) circuit resets all internal programming cir-cuitry, and sets the device in the Write Disable mode.–At Power-up and Power-down, the device must not be selected (that is, Chip Select Input (S) must be driven Low) until the supplyvoltage reaches the operating value V CCspecified in Table 9. to Table 11..–When V CC reaches its valid level, the device is properly reset (in the Write Disable mode) and is ready to decode and execute incominginstructions.For the M93Cx6 devices (5V range) the POR threshold voltage is around 3V. For the M93Cx6-W (3V range) and M93Cx6-R (2V range) the POR threshold voltage is around 1.5V.5/31M93C86, M93C76, M93C66, M93C56, M93C466/31INSTRUCTIONSThe instruction set of the M93Cx6 devices con-tains seven instructions, as summarized in Table 5. to Table 7.. Each instruction consists of the fol-lowing parts, as shown in Figure 4.:s Each instruction is preceded by a rising edgeon Chip Select Input (S) with Serial Clock (C) being held Low.s A start bit, which is the first ‘1’ read on SerialData Input (D) during the rising edge of Serial Clock (C).s Two op-code bits, read on Serial Data Input(D) during the rising edge of Serial Clock (C). (Some instructions also use the first two bits of the address to define the op-code).sThe address bits of the byte or word that is to be accessed. For the M93C46, the address is made up of 6 bits for the x16 organization or 7 bits for the x8 organization (see Table 5.). For the M93C56 and M93C66, the address is made up of 8 bits for the x16 organization or 9 bits for the x8 organization (see Table 6.). For the M93C76 and M93C86, the address is made up of 10 bits for the x16 organization or 11 bits for the x8 organization (see Table 7.).The M93Cx6 devices are fabricated in CMOS technology and are therefore able to run as slow as 0Hz (static input signals) or as fast as the max-imum ratings specified in Table 20. to Table 23..Table 5. Instruction Set for the M93C46Note: 1.X = Don ’t Care bit.Instruc tionDescriptionStart bit Op-Codex8 Origination (ORG = 0)x16 Origination (ORG = 1)Address 1DataRequiredClock CyclesAddress 1DataRequired Clock CyclesREAD Read Data from Memory 110A6-A0Q7-Q0A5-A0Q15-Q0WRITE Write Data to Memory101A6-A0D7-D018A5-A0D15-D025EWEN Erase/Write Enable 10011X XXXX 1011 XXXX 9EWDS Erase/Write Disable 10000X XXXX 1000 XXXX 9ERASE Erase Byte or Word 111A6-A010A5-A09ERAL Erase All Memory 10010X XXXX 1010 XXXX 9WRALWrite All Memory with same Data10001X XXXXD7-D01801 XXXXD15-D0257/31M93C86, M93C76, M93C66, M93C56, M93C46Table 6. Instruction Set for the M93C56 and M93C66Note: 1.X = Don ’t Care bit.2.Address bit A8 is not decoded by the M93C56.3.Address bit A7 is not decoded by the M93C56.Table 7. Instruction Set for the M93C76 and M93C86Note: 1.X = Don ’t Care bit.2.Address bit A10 is not decoded by the M93C76.3.Address bit A9 is not decoded by the M93C76.Instruc tionDescriptionStart bit Op-Codex8 Origination (ORG = 0)x16 Origination (ORG = 1)Address 1,2DataRequiredClock CyclesAddress 1,3DataRequired Clock CyclesREAD Read Data from Memory 110A8-A0Q7-Q0A7-A0Q15-Q0WRITE Write Data to Memory101A8-A0D7-D020A7-A0D15-D027EWEN Erase/Write Enable 100 1 1XXXXXXX 1211XX XXXX 11EWDS Erase/Write Disable 1000 0XXX XXXX 1200XX XXXX 11ERASE Erase Byte or Word 111A8-A012A7-A011ERAL Erase All Memory 100 1 0XXX XXXX 1210XX XXXX 11WRALWrite All Memory with same Data1000 1XXX XXXXD7-D02001XX XXXXD15-D027Instruc tionDescriptionStart bit Op-Codex8 Origination (ORG = 0)x16 Origination (ORG = 1)Address1,2DataRequiredClock CyclesAddress 1,3DataRequiredClock CyclesREAD Read Data from Memory 110A10-A0Q7-Q0A9-A0Q15-Q0WRITE Write Data to Memory101A10-A0D7-D022A9-A0D15-D029EWEN Erase/Write Enable 10011X XXXX XXXX 1411 XXXX XXXX 13EWDS Erase/Write Disable 10000X XXXX XXXX 1400 XXXX XXXX 13ERASE Erase Byte or Word 111A10-A014A9-A013ERAL Erase All Memory 10010X XXXX XXXX 1410 XXXX XXXX 13WRALWrite All Memory with same Data10001X XXXX XXXXD7-D02201 XXXX XXXXD15-D029M93C86, M93C76, M93C66, M93C56, M93C468/31ReadThe Read Data from Memory (READ) instruction outputs data on Serial Data Output (Q). When the instruction is received, the op-code and address are decoded, and the data from the memory is transferred to an output shift register. A dummy 0bit is output first, followed by the 8-bit byte or 16-bit word, with the most significant bit first. Output data changes are triggered by the rising edge of Serial Clock (C). The M93Cx6 automatically incre-ments the internal address register and clocks out the next byte (or word) as long as the Chip Select Input (S) is held High. In this case, the dummy 0 bit is not output between bytes (or words) and a con-tinuous stream of data can be read.Erase/Write Enable and DisableThe Erase/Write Enable (EWEN) instruction en-ables the future execution of erase or write instruc-tions, and the Erase/Write Disable (EWDS)instruction disables it. When power is first applied,the M93Cx6 initializes itself so that erase and write instructions are disabled. After an Erase/Write En-able (EWEN) instruction has been executed, eras-ing and writing remains enabled until an Erase/Write Disable (EWDS) instruction is executed, or until V CC falls below the power-on reset threshold voltage. To protect the memory contents from ac-cidental corruption, it is advisable to issue the Erase/Write Disable (EWDS) instruction after ev-ery write cycle. The Read Data from Memory (READ) instruction is not affected by the Erase/Write Enable (EWEN) or Erase/Write Disable (EWDS) instructions.M93C86, M93C76, M93C66, M93C56, M93C46EraseThe Erase Byte or Word (ERASE) instruction sets the bits of the addressed memory byte (or word) to 1. Once the address has been correctly decoded, the falling edge of the Chip Select Input (S) starts the self-timed Erase cycle. The completion of the cycle can be detected by monitoring the Ready/ Busy line, as described in the READY/BUSY STA-TUS section.WriteFor the Write Data to Memory (WRITE) instruction, 8 or 16 data bits follow the op-code and address bits. These form the byte or word that is to be writ-ten. As with the other bits, Serial Data Input (D) is sampled on the rising edge of Serial Clock (C).After the last data bit has been sampled, the Chip Select Input (S) must be taken Low before the next rising edge of Serial Clock (C). If Chip Select Input (S) is brought Low before or after this specific time frame, the self-timed programming cycle will not be started, and the addressed location will not be programmed. The completion of the cycle can be detected by monitoring the Ready/Busy line, as described later in this document.Once the Write cycle has been started, it is inter-nally self-timed (the external clock signal on Serial Clock (C) may be stopped or left running after the start of a Write cycle). The cycle is automatically preceded by an Erase cycle, so it is unnecessary to execute an explicit erase instruction before a Write Data to Memory (WRITE) instruction.9/31M93C86, M93C76, M93C66, M93C56, M93C4610/31Erase AllThe Erase All Memory (ERAL) instruction erases the whole memory (all memory bits are set to 1).The format of the instruction requires that a dum-my address be provided. The Erase cycle is con-ducted in the same way as the Erase instruction (ERASE). The completion of the cycle can be de-tected by monitoring the Ready/Busy line, as de-scribed in the READY/BUSY STATUS section.Write AllAs with the Erase All Memory (ERAL) instruction,the format of the Write All Memory with same Data (WRAL) instruction requires that a dummy ad-dress be provided. As with the Write Data to Mem-ory (WRITE) instruction, the format of the Write All Memory with same Data (WRAL) instruction re-quires that an 8-bit data byte, or 16-bit data word,be provided. This value is written to all the ad-dresses of the memory device. The completion of the cycle can be detected by monitoring the Ready/Busy line, as described next.While the Write or Erase cycle is underway, for a WRITE, ERASE, WRAL or ERAL instruction, the Busy signal (Q=0) is returned whenever Chip Se-lect Input (S) is driven High. (Please note, though, that there is an initial delay, of t SLSH, before this status information becomes available). In this state, the M93Cx6 ignores any data on the bus. When the Write cycle is completed, and Chip Se-lect Input (S) is driven High, the Ready signal (Q=1) indicates that the M93Cx6 is ready to re-ceive the next instruction. Serial Data Output (Q) remains set to 1 until the Chip Select Input (S) is brought Low or until a new start bit is decoded. COMMON I/O OPERATIONSerial Data Output (Q) and Serial Data Input (D) can be connected together, through a current lim-iting resistor, to form a common, single-wire data bus. Some precautions must be taken when oper-ating the memory in this way, mostly to prevent a short circuit current from flowing when the last ad-dress bit (A0) clashes with the first data bit on Se-rial Data Output (Q). Please see the application note AN394 for details. CLOCK PULSE COUNTERIn a noisy environment, the number of pulses re-ceived on Serial Clock (C) may be greater than the number delivered by the master (the microcontrol-ler). This can lead to a misalignment of the instruc-tion of one or more bits (as shown in Figure 7.) and may lead to the writing of erroneous data at an er-roneous address.To combat this problem, the M93Cx6 has an on-chip counter that counts the clock pulses from the start bit until the falling edge of the Chip Select In-put (S). If the number of clock pulses received is not the number expected, the WRITE, ERASE, ERAL or WRAL instruction is aborted, and the contents of the memory are not modified.The number of clock cycles expected for each in-struction, and for each member of the M93Cx6 family, are summarized in Table 5. to Table 7.. For example, a Write Data to Memory (WRITE) in-struction on the M93C56 (or M93C66) expects 20 clock cycles (for the x8 organization) from the start bit to the falling edge of Chip Select Input (S). That is:1 Start bit+ 2 Op-code bits+ 9 Address bits+ 8 Data bits11/3112/31MAXIMUM RATINGStressing the device above the rating listed in the Absolute Maximum Ratings" table may cause per-manent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not im-plied. Exposure to Absolute Maximum Rating con-ditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality docu-ments.Table 8. Absolute Maximum RatingsNote: pliant with JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK ® 7191395 specification, andthe European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU 2.JEDEC Std JESD22-A114A (C1=100pF, R1=1500 Ω, R2=500 Ω)Symbol ParameterMin.Max.Unit T STG Storage Temperature–65150°C T LEAD Lead T emperature during Soldering See note 1°C V OUT Output range (Q = V OH or Hi-Z)–0.50V CC +0.5V V IN Input range –0.50V CC +1V V CC Supply Voltage–0.50 6.5V V ESDElectrostatic Discharge Voltage (Human Body model) 2–40004000V13/31DC AND AC PARAMETERSThis section summarizes the operating and mea-surement conditions, and the DC and AC charac-teristics of the device. The parameters in the DC and AC Characteristic tables that follow are de-rived from tests performed under the Measure-ment Conditions summarized in the relevant tables. Designers should check that the operating conditions in their circuit match the measurement conditions when relying on the quoted parame-ters.Table 9. Operating Conditions (M93Cx6)Table 10. Operating Conditions (M93Cx6-W)Table 11. Operating Conditions (M93Cx6-R)Symbol ParameterMin.Max.Unit V CCSupply Voltage4.55.5V T AAmbient Operating Temperature (Device Grade 6)–4085°C Ambient Operating Temperature (Device Grade 7)–40105°C Ambient Operating Temperature (Device Grade 3)–40125°CSymbol ParameterMin.Max.Unit V CCSupply Voltage2.5 5.5V T AAmbient Operating Temperature (Device Grade 6)–4085°C Ambient Operating Temperature (Device Grade 7)–40105°C Ambient Operating Temperature (Device Grade 3)–40125°CSymbol ParameterMin.Max.Unit V CC Supply Voltage1.8 5.5V T AAmbient Operating Temperature (Device Grade 6)–4085°C14/31Table 12. AC Measurement Conditions (M93Cx6)Note: 1.Output Hi-Z is defined as the point where data out is no longer driven.Table 13. AC Measurement Conditions (M93Cx6-W and M93Cx6-R)Note: 1.Output Hi-Z is defined as the point where data out is no longer driven.Table 14. CapacitanceNote:Sampled only, not 100% tested, at T A =25°C and a frequency of 1MHz.Symbol Parameter Min.Max.Unit C LLoad Capacitance 100pFInput Rise and Fall Times 50ns Input Pulse Voltages0.4V to 2.4V V Input Timing Reference Voltages 1.0V and 2.0V V Output Timing Reference Voltages0.8V and 2.0VVSymbol Parameter Min.Max.Unit C LLoad Capacitance 100pFInput Rise and Fall Times 50ns Input Pulse Voltages0.2V CC to 0.8V CC V Input Timing Reference Voltages 0.3V CC to 0.7V CC V Output Timing Reference Voltages0.3V CC to 0.7V CCVSymbol ParameterTest Condition MinMax Unit C OUT OutputCapacitance V OUT = 0V 5pF C INInputCapacitanceV IN = 0V5pF15/31Table 15. DC Characteristics (M93Cx6, Device Grade 6)Note: 1.Current product: identified by Process Identification letter F or M.2.New product: identified by Process Identification letter W or G or S.Table 16. DC Characteristics (M93Cx6, Device Grade 7 or 3)Note: 1.Current product: identified by Process Identification letter F or M.2.New product: identified by Process Identification letter W or G or S.Symbol ParameterTest Condition Min.Max.Unit I LI Input Leakage Current 0V ≤ V IN ≤ V CC±2.5 µA I LOOutput Leakage Current0V ≤ V OUT ≤ V CC , Q in Hi-Z ±2.5 µA I CCSupply CurrentV CC = 5V, S = V IH , f = 1 MHz, CurrentProduct 11.5 mA V CC = 5V, S = V IH , f = 2 MHz, NewProduct 22mAI CC1Supply Current (Stand-by)V CC = 5V , S = V SS , C = V SS ,ORG = V SS or V CC , Current Product 150 µA V CC = 5V , S = V SS , C = V SS , ORG = V SS or V CC , New Product 215 µA V IL Input Low Voltage V CC = 5V ± 10%–0.450.8 V V IH Input High Voltage V CC = 5V ± 10%2V CC + 1 V V OL Output Low Voltage V CC = 5V, I OL = 2.1mA 0.4 V V OHOutput High VoltageV CC = 5V , I OH = –400µA2.4VSymbol ParameterTest Condition Min.Max.UnitI LI Input Leakage Current 0V ≤ V IN ≤ V CC±2.5 µA I LOOutput Leakage Current0V ≤ V OUT ≤ V CC , Q in Hi-Z ±2.5 µA I CCSupply CurrentV CC = 5V, S = V IH , f = 1 MHz, CurrentProduct 11.5 mA V CC = 5V, S = V IH , f = 2 MHz, NewProduct 22 mA I CC1Supply Current (Stand-by)V CC = 5V , S = V SS , C = V SS ,ORG = V SS or V CC , Current Product 150 µA V CC = 5V , S = V SS , C = V SS , ORG = V SS or V CC , New Product 215 µA V IL Input Low Voltage V CC = 5V ± 10%–0.450.8 V V IH Input High Voltage V CC = 5V ± 10%2V CC + 1 V V OL Output Low Voltage V CC = 5V, I OL = 2.1mA 0.4 V V OHOutput High VoltageV CC = 5V , I OH = –400µA2.4V。

The mark <R> shows major revised points.The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.DATA SHEETThe information in this document is subject to change without notice. Before using this document, pleaseconfirm that this is the latest version.Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.Document No. PN10262EJ02V0DS (2nd edition)Date Published May 2006 NS CP(K) Printed in Japan1995, 2006DESCRIPTIONThe PS8601 and PS8601L are 8-pin high speed photocouplers containing a GaAIAs LED on input side and a PN photodiode and a high speed amplifier transistor on output side on one chip. The PS8601 is in a plastic DIP (Dual In-line Package). The PS8601L is lead bending type (Gull wing) for surface mount. The PS8601L1 is lead bending type for long creepage distance.The PS8601L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.FEATURES• High supply voltage (V CC = 35 V MAX.) • High speed response (t PHL , t PLH = 0.8 µs MAX.) • High isolation voltage (BV = 5 000 V r.m.s.)• TTL, CMOS compatible with a resistor• For Infrared reflow soldering• Ordering number of tape product : PS8601L-E3, E4: 1 000 pcs/reel: PS8601L2-E3, E4: 1 000 pcs/reel • Safety standards • UL approved: File No. E72422 • BSI approved: No. 8004, 8854• DIN EN60747-5-2 (VDE0884 Part2) approved (Option)APPLICATIONS• Interface for measurement or control equipment • Substitutions for relays and pulse transformers<R><R><R>PACKAGE DIMENSIONS (UNIT: mm)DIP TypeLead Bending Type2Data Sheet PN10262EJ02V0DSLead Bending Type For Long Creepage DistanceData Sheet PN10262EJ02V0DS 3MARKING EXAMPLE4Data Sheet PN10262EJ02V0DSData Sheet PN10262EJ02V0DS 5ORDERING INFORMATIONPart NumberOrder NumberSolder Plating SpecificationPacking StyleSafety StandardApproval ApplicationPart Number *1PS8601 PS8601-A Pb-F ree Magazine case 50 pcs Standard productsPS8601PS8601L PS8601L-A (UL, BSI approved) PS8601L1 PS8601L1-A PS8601L2 PS8601L2-APS8601L-E3 PS8601L-E3-AEmbossed Tape 1 000 pcs/reel PS8601L-E4 PS8601L-E4-A PS8601L2-E3 PS8601L2-E3-A PS8601L2-E4 PS8601L2-E4-APS8601-V PS8601-V-A Magazine case 50 pcsDIN EN60747-5-2PS8601L-VPS8601L-V -A(VDE0884 Part2)PS8601L1-V PS8601L1-V-A Approved (Option) PS8601L2-V PS8601L2-V-APS8601L-V-E3 PS8601L-V-E3-A Embossed Tape 1 000 pcs/reel PS8601L-V-E4 PS8601L-V-E4-A PS8601L2-V-E3 PS8601L2-V-E3-A PS8601L2-V-E4 PS8601L2-V-E4-A*1 For the application of the Safety Standard, following part number should be used.ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)Parameter Symbol Ratings UnitDiode Forward Current *1I F 25 mA Reverse Voltage V R 5 V Power Dissipation P D 45 mW Detector Supply VoltageV CC 35 V Output Voltage V O 35 V Output CurrentI O 8 mA Power Dissipation *2P C 100 mWIsolation Voltage *3BV 5 000 Vr.m.s. Operating Ambient Temperature T A −55 to +100 °C Storage TemperatureT stg−55 to +100°C*1 Reduced to 0.25 mA/°C at T A = 25°C or more.*2 Applies to output pin V O (collector pin). Reduced to 1.0 mW/°C at T A = 25°C or more. *3 AC voltage for 1 minute at T A = 25°C, RH = 60% between input and output.Pins 1-4 shorted together, 5-8 shorted together.<R><R>Data Sheet PN10262EJ02V0DS6 ELECTRICAL CHARACTERISTICS (T A = 25°C)Parameter Symbol Conditions MIN. TYP.*1MAX. UnitDiode F orward Voltage V F I F = 16 mA 1.7 2.2 VReverse Current I RV R = 5 V10µAF orward VoltageTemperature Coefficent∆V F /∆T I F = 16 mA−1.6 mV/°C Terminal Capacitance C t V = 0 V, f = 1 MHz30 pF Detector High Level Output Current I OH (1) I F = 0 mA, V CC = V O = 5.5 V 3 500 nAHigh Level Output Current I OH (2) I F = 0 mA, V CC = V O = 35 V 100 µALow Level Output Voltage V OL I F = 16 mA, V CC = 4.5 V, I O = 1.2 mA 0.1 0.4 VLow Level Supply Current I CCL I F = 16 mA, V O = Open, V CC = 35 V 50 µA High Level Supply Current I CCH I F = 0 mA, V O = Open, V CC = 35 V 0.01 1 µADC Current Gainh FE V O = 5 V, I O = 3 mA100 Coupled Current Transfer RatioCTRI F = 16 mA, V CC = 4.5 V, V O = 0.4 V15% Isolation Resistance R I-O V I-O = 1 kV DC 1011Ω Isolation Capacitance C I-O V = 0 V, f = 1 MHz0.7pFPropagation Delay Timet PHL I F = 16 mA, V CC = 5 V, R L = 1.9 k Ω 0.5 0.8 µs (H → L)*2Propagation Delay Timet PLH I F = 16 mA, V CC = 5 V, R L = 1.9 k Ω 0.3 0.8 µs (L → H)*2*1 Typical values at T A = 25°C*2 Test circuit for propagation delay time= 5 V (Monitor)V O Pulse InputI F MonitorPW = 100 s µ(OLRemark C L includes probe and stray wiring capacitance.USAGE CAUTIONS1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against staticelectricity when handling.2. By-pass capacitor of more than 0.1 µF is used between V CC and GND near device. Also, ensure that thedistance between the leads of the photocoupler and capacitor is no more than 10 mm. 3. Avoid storage at a high temperature and high humidity.<R>Data Sheet PN10262EJ02V0DS7TYPICAL CHARACTERISTICS (T A = 25°C, unless otherwise specified)Forward Voltage V F (V)F o r w a r d C u r r e n t I F (m A )FORWARD CURRENT vs. FORWARD VOLTAGEAmbient Temperature T A (˚C)M a x i m u m F o r w a r d C u r r e n t I F (m A )MAXIMUM FORWARD CURRENT vs. AMBIENT TEMPERATUREAmbient Temperature T A (˚C)D e t e c t o r P o w e r D i s s i p a t i o n P C (m W )DETECTOR POWER DISSIPATION vs. AMBIENT TEMPERATUREOutput Voltage V O (V)O u t p u t C u r r e n t I O (m A )OUTPUT CURRENT vs. OUTPUT VOLTAGEAmbient Temperature T A (˚C)N o r m a l i z e d C u r r e n t T r a n s f e r R a t i o C T RNORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATUREFoward Current I F (mA)C u r r e n t T r a n s f e r R a t i o C T R (%)CURRENT TRANSFER RATIO vs. FOWARD CURRENT30201002550751001251208040025507510012510060200.010.11.010100V CC = 4.5 V,V O = 0.4 V,T A = 25 ˚C504030201000.10.5151050100Normalized to 1.0 at T A = 25 ˚C,I F = 16 mA, V CC = 4.5 V, V O = 0.4 V–75–50–252550751001252.01.81.61.41.21.00.80.60.40.20.0Remark The graphs indicate nominal characteristics.Data Sheet PN10262EJ02V0DS8 Foward Current I F (mA)O u t p u t V o l t a g e V O (V )OUTPUT VOLTAGE vs.FOWARD CURRENTLoad Resistance R L (k Ω)P r o p a g a t i o n D e l a y T i m e t P H L , t P L H( s )PROPAGATION DELAY TIME, vs. LORD RESISTANCEAmbient T emperature T A (˚C)PROPAGATION DELAY TIME, vs. AMBIENT TEMPERATUREAmbient T emperature T A (˚C)H i g h L e v e l O u t p u t C u r r e n t I O H (n A )HIGH LEVEL OUTPUT CURRENT vs. AMBIENT TEMPERATUREP r o p a g a t i o n D e l a y T i m e t P H L , t P L H ( s )t PHLt PLH V CC = 5 V,I F = 16mA,R L = 1.9 k Ω–75–50–252550751001253.02.52.01.51.00.50.0Remark The graphs indicate nominal characteristics.TAPING SPECIFICATIONS (UNIT: mm)Data Sheet PN10262EJ02V0DS9Data Sheet PN10262EJ02V0DS10<R>Data Sheet PN10262EJ02V0DS11NOTES ON HANDLING1. Recommended soldering conditions(1) Infrared reflow soldering • Peak reflow temperature 260°C or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220°C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s• Number of reflows Three• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.)P a c k a g e S u r f a c e T e m p e r a t u r e T (˚C )Time (s)Recommended Temperature Profile of Infrared Reflow(2) Wave soldering • Temperature 260°C or below (molten solder temperature) • Time10 seconds or less• Preheating conditions 120°C or below (package surface temperature)• Number of times One (Allowed to be dipped in solder including plastic mold portion.)• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.)(3) Soldering by soldering iron• Peak temperature (lead part temperature) 350°C or below • Time (each pins)3 seconds or less• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.)(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead. (b) Please be sure that the temperature of the package would not be heated over 100°C.<R>(4) Cautions• FluxesAvoid removing the residual flux with freon-based and chlorine-based cleaning solvent.2. Cautions regarding noiseBe aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings.12Data Sheet PN10262EJ02V0DSSPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)Parameter SymbolSpeckUnit Application classification (DIN VDE 0109)for rated line voltages ≤ 300 V r.m.s. for rated line voltages ≤ 600 V r.m.s.IV IIIClimatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21 Dielectric strengthmaximum operating isolation voltageTest voltage (partial discharge test, procedure a for type test and random test) U pr = 1.2 × U IORM, P d < 5 pC U IORMU pr8901 068V peakV peakTest voltage (partial discharge test, procedure b for all devices test) U pr = 1.6 × U IORM, P d < 5 pC U pr 1424 V peakHighest permissible overvoltage U TR 8000 V peak Degree of pollution (DIN VDE 0109) 2Clearance distance > 7.0 mm Creepage distance > 7.0 mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI 175Material group (DIN VDE 0109) III aStorage temperature range T stg–55 to +150 °C Operating temperature range T A–55 to +100 °C Isolation resistance, minimum valueV IO = 500 V dc at T A = 25 °CV IO = 500 V dc at T A MAX. at least 100 °C Ris MIN.Ris MIN.10121011ΩΩSafety maximum ratings (maximum permissible in case of fault, see thermal derating curve)Package temperatureCurrent (input current I F, Psi = 0)Power (output or total power dissipation) Isolation resistanceV IO = 500 V dc at T A = 175 °C (Tsi)TsiIsiPsiRis MIN.175400700109°CmAmWΩData Sheet PN10262EJ02V0DS13Data Sheet PN10262EJ02V0DS14The information in this document is current as of M ay, 2006. 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To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features.NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific".The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. 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Typical Junction Capacitance...CJ (Note 1) Maximum Reverse Recovery Time...tRR Page 4-18
元器件交易网
Data Sheet
8.0 Amp FAST RECOVERY PLASTIC RECTIFIERS
Ratings at 25 Deg. C ambient temperature unless otherwise specified. 1 cm Single Phase Half Wave, 60 Hz Resistive or Inductive Load. For Capacitive Load, Derate Current by 20%.
Non-Inductive
Reverse Recovery Characteristics
50Ω Ω 25 VDC Ω D.U.T 10Ω 1Ω NonInductive (-)
Pulse Generator Note 2
100 10 1 .1
(+) (-)
+.5A 0A -.25A -1.0A
tRR
FR80 . . . 810 Series
元器件交易网
Data Sheet Description
8.0 Amp FAST RECOVERY PLASTIC RECTIFIERS
JEDEC TO-220AC
1 2 1 2 Case Case
Mechanical Dimensions
FR80 . . . 810 Series
Non-Repetitive Peak Forward Surge Current 120 80 40 1