© 1999, 2000MOS FIELD EFFECT TRANSISTOR2SK3354SWITCHINGN-CHANNEL POWER MOS FETDATA SHEET
Document No.D14131EJ4V0DS00 (4th edition)Date PublishedJuly 2002 NS CP(K)Printed in JapanThe information in this document is subject to change without notice. Before using this document, pleaseconfirm that this is the latest version.Not all devices/types available in every country. Please check with local NEC representative foravailability and additional information.The mark ! shows major revised points.DESCRIPTION The 2SK3354 is N-channel MOS Field Effect Transistordesigned for high current switching applications.FEATURES•Super low on-state resistance:RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 42 A)RDS(on)2 = 12 mΩ MAX. (VGS = 4 V, ID = 42 A)•Low Ciss: Ciss = 6300 pF TYP.•Built-in gate protection diodeABSOLUTE MAXIMUM RATINGS (TA = 25°C)Drain to Source Voltage (VGS = 0 V)VDSS60VGate to Source Voltage (VDS = 0 V)VGSS(AC)±20VDrain Current (DC) (TC = 25°C)ID(DC)±83ADrain Current (pulse) Note1ID(pulse)±332ATotal Power Dissipation (TC = 25°C)PT1100WTotal Power Dissipation (TA = 25°C)PT21.5WChannel TemperatureTch150°CStorage TemperatureTstg–55 to +150°CSingle Avalanche Current Note2IAS55ASingle Avalanche Energy Note2EAS302mJNotes1.PW ≤ 10 µs, Duty cycle ≤ 1%2. Starting Tch = 25°C, VDD = 30 V , RG = 25 Ω, VGS = 20 → 0 VORDERING INFORMATIONPART NUMBERPACKAGE2SK3354TO-220AB2SK3354-STO-2622SK3354-ZJTO-2632SK3354-ZTO-220SMDNoteNote TO-220SMD package is produced only in Japan.(TO-220AB)(TO-262)
14.2 mm (0.56 inch)
Seven Segment Displays
Technical Data
Features
• Industry Standard Size• Industry Standard Pinout15.24 mm (0.6 in.) DIP Leadson 2.54 mm (0.1 in.) Centers• Choice of ColorsAlGaAs Red, High EfficiencyRed, Yellow, Green, Orange• Excellent AppearanceEvenly Lighted SegmentsMitered Corners on SegmentsGray Package Gives OptimumContrast±50° Viewing Angle• Design FlexibilityCommon Anode or CommonCathodeSingle and Dual DigitsRight Hand Decimal Point±1. Overflow Character• Categorized for LuminousIntensityYellow and Green Categorizedfor ColorUse of Like Categories Yields aUniform Display• High Light Output• High Peak Current• Excellent for Long DigitString Multiplexing• Intensity and ColorSelection OptionSee Intensity and ColorSelected Displays Data Sheet• Sunlight Viewable AlGaAs
Description
The 14.2 mm (0.56 inch) LEDseven segment displays aredesigned for viewing distances upto 7 metres (23 feet). Thesedevices use an industry standardsize package and pinout. Both thenumeric and ±1 overflow devicesfeature a right hand decimalpoint. All devices are available aseither common anode or commoncathode.OrangeAlGaAs RedHERYellowGreenPackageHDSP-HDSP-[1]HDSP-[1]HDSP-HDSP- DescriptionDrawing
SV20
1/7APPLICATIONSsRectificationsFreewheel DiodesDC Motor ControlsPower SuppliessWeldingsBattery Chargers
FEATURESsHigh Surge Capability
VOLTAGE RATINGSKEY PARAMETERSVRRM2000VIF(AV)220AIFSM4000A
200014001000600SV20 20 M or K(R)SV20 14 M or K(R)SV20 10 M or K(R)SV20 06 M or K(R)Conditions
VRSM = VRRM + 100V
Lower voltage grades available.M for M12 thread. K for 1/2" - 20UNF thread, R for reversepolarity.Add C to type number for DO8C package.Type NumberRepetitive PeakReverse VoltageVRRMV
CURRENT RATINGS
SymbolParameterConditions
Single Side CooledIF(AV)Mean forward currentIF(RMS)RMS value
IFContinuous (direct) forward currentUnitsMax.
Half wave resistive load, Tcase = 100oC220ATcase = 100oC
350A
T
case = 100oC297AOutline type codes: DO8C and DO8
See Package Details for further information.SV20
Rectifier Diode
Replaces March 1998 version, DS4085-2.3DS4085-3.0 January 2000元器件交易网SV20
2SK2232
2006-11-17 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2
−π−MOSV)
2SK2232
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
z 4-V gate drive
z Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.)
z High forward transfer admittance : |Yfs| = 16 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (V
DS = 60 V)
z Enhancement mode : Vth = 0.8~2.0 V (V
DS = 10 V, I
D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating
Unit
Drain−source voltage V
DSS 60 V
Drain−gate voltage (R
GS = 20 kΩ) V
DGR 60 V
Gate−source voltage V
GSS ±20 V
DC (Note 1) I
D 25 A
Drain current
Pulse (Note 1) I
DP 100 A
Drain power dissipation (Tc = 25°C) P
D 35 W
Single pulse avalanche energy
(Note 2) E
AS 156 mJ
Avalanche current I
AR 25 A
Repetitive avalanche energy (Note 3) E
AR 3.5 mJ
