PZT751T1;PZT751T1G;中文规格书,Datasheet资料

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thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die NPN Complement is PZT651T1 AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*
PNP
VCE = -2.0 V
Figure 1. Typical DC Current Gain
Figure 2. Typical DC Current Gain
NPN
2.0 1.8 1.6 V, VOLTAGE (VOLTS) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 50 100 200 500 1.0 A IC, COLLECTOR CURRENT (mA) 2.0 A 4.0 A VCE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2.0 V VBE(sat) @ IC/IB = 10 V, VOLTAGE (VOLTS) -2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 -50 -100
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector−Emitter Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base−Emitter Cutoff Current (VEB = 4.0 Vdc) Collector−Base Cutoff Current (VCB = 80 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO IEBO ICBO 60 80 5.0 − − − − − 0.1 100 Vdc Vdc Vdc mAdc nAdc
Features
High Current: 2.0 A The SOT−223 Package can be soldered using wave or reflow. SOT−223 package ensures level mounting, resulting in improved
Байду номын сангаас
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
NPN
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) 50 100 200 500 IC = 10 mA IC = 100 mA IC = 500 mA IC = 2.0 A TJ = 25C
VCE(sat)
Vdc
VBE(on) VBE(sat) fT
Vdc Vdc MHz

2
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PZT751T1G, SPZT751T1G
NPN
300 270 240 hFE, DC CURRENT GAIN 210 180 150 120 90 60 30 0 10 20 50 100 200 500 1.0 A 2.0 A 4.0 A IC, COLLECTOR CURRENT (mA) - 55C 25C TJ = 125C VCE = 2.0 V hFE, DC CURRENT GAIN 250 225 200 175 150 125 100 75 50 25 0 -10 - 20 - 50 -100 - 200 - 500 -1.0 A -2.0 A -4.0 A IC, COLLECTOR CURRENT (mA) - 55C 25C TJ = 125C
PZT751T1G, SPZT751T1G PNP Silicon Planar Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.
PNP
VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10 -200 -500 -1.0 A IC, COLLECTOR CURRENT (mA) -2.0 A -4.0 A
Figure 3. On Voltages
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 7
1
Publication Order Number: PZT751T1/D
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PZT751T1G, SPZT751T1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR−4 glass epoxy printed circuit board using minimum recommended footprint.
SOT−223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUNT
SOT−223 CASE 318E STYLE 1 COLLECTOR 2, 4
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
= Assembly Location = Year = Work Week = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device PZT751T1G SPZT751T1G Package SOT−223 (Pb−Free) SOT−223 (Pb−Free) Shipping† 1,000 / Tape & Reel 1,000 / Tape & Reel
Figure 4. On Voltages PNP
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 IC = -10 mA IC = -100 mA -50 -100-200 -500 IC = -500 mA IC = -2.0 A TJ = 25C
BASE 1 EMITTER 3
MARKING DIAGRAM
AYW ZT751G G
1
Tstg TJ
THERMAL CHARACTERISTICS
Rating Thermal Resistance from Junction−to− Ambient in Free Air Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RqJA TL Value 156 260 10 Unit C/W C Sec
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 50 mAdc, VCE = 2.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) (IC = 1.0 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) Collector−Emitter Saturation Voltages (IC = 2.0 Adc, IB = 200 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) Base−Emitter Voltages (IC = 1.0 Adc, VCE = 2.0 Vdc) Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) Current−Gain−Bandwidth (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%. hFE 75 75 75 40 − − − − 75 − − − − 0.5 0.3 1.0 1.2 − −