TEMD5010X01中文资料
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TEMD5010X01Document Number 84679Rev. 1.2, 07-May-07Vishay Semiconductorswww.vishay.com1
20535Silicon PIN Photodiode, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q101 Released
DescriptionTEMD5010X01 is a high speed and high sensitivePN photodiode. t is a miniature Surface MountDevice (SMD) including the chip with a 7.5 mm2
sensitive area, detecting visible and near infraredradiation.
Features •Product designed and qualified acc.AEC-Q101 for the automotive market •Large radiant sensitive area: A = 7.5 mm2 •Wide angle of half sensitivity ϕ = ± 65° •High photo sensitivity for visible and near infraredradiation •Fast response times •Small junction capacitance •Plastic package •Floor life: 72 h, MSL 4, acc. J-STD-20 •Lead (Pb)-free component •Component in accordance to ELV 2000/53/EC,RoHS 2002/95/EC and WEEE 2002/96/ECApplications •Automotive sensors •Infrared detectors •Ambient light detectors •High speed photo detectors
Absolute Maximum RatingsTamb = 25°C, unless otherwise specifiedParameterTest conditionSymbolValueUnitReverse voltageVR60VPower dissipationTamb ≤ 25°CPV215mW
Junction temperatureTj100°COperating temperature rangeTamb- 40 to + 100°CStorage temperature rangeTstg- 40 to + 100°C
Soldering temperatureIn accordance with fig. 8Tsd260°CThermal resistance junction/ambientRthJA350K/W
e4元器件交易网www.cecb2b.comwww.vishay.com2Document Number 84679Rev. 1.2, 07-May-07
TEMD5010X01Vishay SemiconductorsElectrical CharacteristicsTamb = 25°C, unless otherwise specified
Optical CharacteristicsTamb = 25°C, unless otherwise specified
Typical CharacteristicsTamb = 25°C, unless otherwise specified
ParameterTest conditionSymbolMinTyp.MaxUnitForward voltageIF = 50 mAVF11.3VBreakdown voltageIR = 100 µA, E = 0V(BR)60V
Reverse dark currentVR = 10 V, E = 0Iro230nADiode capacitanceVR = 0 V, f = 1 MHz, E = 0CD70pF
VR = 3 V, f = 1 MHz, E = 0CD2540pF
ParameterTest conditionSymbolMinTyp.MaxUnitOpen circuit voltageEe = 1 mW/cm2, λ = 950 nmVo350mV
Temperature coefficient of VoEe = 1 mW/cm2, λ = 950 nmTKVo- 2.6mV/KShort circuit currentEe = 1 mW/cm2, λ = 950 nmIk50µATemperature coefficient of IkEe = 1 mW/cm2, λ = 950 nmTKIk0.1%/KReverse light currentEe = 1 mW/cm2, λ = 950 nm, VR = 5 VIra4555µA
Angle of half sensitivityϕ± 65degWavelength of peak sensitivityλp900nm
Range of spectral bandwidthλ0.5600 to 1050nmNoise equivalent powerVR = 10 V, λ = 950 nmNEP4 x 10-14W/√ Hz
Rise timeVR = 10 V, RL = 1 kΩ, λ = 820 nmtr100nsFall timeVR = 10 V, RL = 1 kΩ, λ = 820 nmtf100ns
Figure1. Reverse Dark Current vs. Ambient Temperature20406080110100100010094 8403VR = 10 VTamb - Ambient Temperature (°C)Iro - Reverse Dark Current (nA)Figure2. Relative Reverse Light Current vs. Ambient Temperature0.60.81.01.21.4
94 8409VR=5Vλ = 950 nm
100806040200I - Relative Reverse Lig
ht
Current
T - Ambient Temperature (°C)amb
ra rel
元器件交易网www.cecb2b.comTEMD5010X01
Document Number 84679Rev. 1.2, 07-May-07Vishay Semiconductorswww.vishay.com3
Figure3. Reverse Light Current vs. IrradianceFigure4. Reverse Light Current vs. Reverse VoltageFigure5. Diode Capacitance vs. Reverse Voltage
0.010.110.11101001000I- Reverse Light Current (μA)
raEe- Irradiance (mW/cm )21012787
VR=5Vλ=950nm
0.1110110100
VR- Reverse Voltage (V)
10012788
I- Reverse Light Current (μA)ra1mW/cm2
0.5mW/cm2
0.2mW/cm20.1mW/cm20.05mW/cm2
=950nmλ
020406080
948407E = 0f = 1 MHz
CD - Diode Capacitance
(pF)
VR - Reverse Voltage (V)0.1100
110
Figure6. Relative Spectral Sensitivity vs. WavelengthFigure7. Relative Radiant Sensitivity vs. Angular Displacement35055075095000.20.40.60.81.0115094 8420
λ
λ - Wavelength (nm)S (
)rel - Relative Spectral Sensitivity
0.40.200.20.4S-RelativeSensitivityrel0.69484060.60.90.8
0°30°10°20°40°50°60°70°80°0.7
1.0
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