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P133中文资料

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P133中⽂资料

25A

PASSIVATED ASSEMBLED CIRCUIT ELEMENTS

P100 SERIES1

Bulletin I27125 rev. A 04/99

http://www.doczj.com/doc/422068023.html I D

25A @ T C

85°C I FSM

@ 50Hz 357A @ 60Hz

375A I 2t@ 50Hz 637A 2s

@ 60Hz

580A 2s I 2√t 6365A 2√s V RRM 400 to 1200

V V INS 2500V T J

- 40 to 125

°C

Parameters

P100

Units

Major Ratings and Characteristics

Features

Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM , V DRM Highdynamic characteristics

Wide choice of circuit configurations Simplified mechanical design and assembly UL E78996 approved

Description

The P100 series of Integrated Power Circuits consists of power thyristors and power diodes configured in a single package.With its isolating base plate, mechanical designs are greatly simpli-fied giving advantages of cost reduction and reducedsize.

Applications include power supplies, control cir-cuits and battery chargers.P100 Series

2Bulletin I27125 rev. A 04/99http://www.doczj.com/doc/422068023.html

V RRM maximum repetitive V RSM maximum non-V DRM maximum

I RRM max.Type number

peak reverse voltage repetitive peak reverse

repetitive peak off-state

@ T J max.

voltage

voltage V V

V

mA

P101, P121, P13140050040010

P102, P122, P132600700600P103, P123, P133800900800P104, P124, P134100*********P105, P125, P135

1200

1300

1200

ELECTRICAL SPECIFICATIONS Voltage Ratings

I D Maximum DC output current 25A

@ T C = 85°C, full bridge I TSM Max. peak one-cycle 357t = 10ms No voltage I FSM

non-repetitive on-state 375t = 8.3ms reapplied or forward current

300t = 10ms 100% V RRM 315

t = 8.3ms reapplied Sinusoidal half wave,I 2t

Maximum I 2t for fusing 637t = 10ms

No voltage Initial T J = T J max.

580t = 8.3ms reapplied 450t = 10ms 100% V RRM 410

t = 8.3ms

reapplied

I 2√t Maximum I 2√t for fusing

6365A 2√s

t = 0.1 to 10ms, no voltage reapplied I 2t for time tx = I 2√t . √tx

V T(TO)Max. value of threshold voltage 0.82V T J = 125°C

r t1

Max. level value of on-state slope resistance

V TM Max. peak on-state or V FM forward voltage drop

di/dt

Maximum non repetitive rate of T J = 125°C from 0.67 V DRMrise of turned on current

I TM = π x I T(AV), I g = 500mA, tr < 0.5µs, tp > 6µs I H Maximum holding current 130mA T J = 25°C anode supply = 6V,resistive load, gate open I L

Maximum latching current

250

mA

T J = 25°C anode supply = 6V, resistive load

Parameter

P100

Units Conditions

On-state Conduction

A

A 2s

12

m ?

T J = 125°C, Av. power = V T(TO) * I T(AV) + r t + (I T(RMS))2

1.35V

T J = 25°C, I TM = π x I T(AV)200A/µsP100 Series

3

Bulletin I27125 rev. A 04/99

http://www.doczj.com/doc/422068023.html dv/dt

Maximum critical rate of rise of off-state voltage

I RRM Max. peak reverse and off-state I DRM leakage current at V RRM , V DRM I RRM Max peak reverse leakage current100µA T J = 25°C

50Hz, circuit to base, all terminal shorted,

T J = 25°C, t = 1s

Blocking

Parameter

P100Units Conditions

200

V/µs

T J = 125°C, exponential to 0.67 V DRM gate open

10mA T J = 125°C, gate open circuit V INS

RMS isolation voltage2500

V

P GM Maximum peak gate power

8P G(AV)Maximum average gate power

2I GM Maximum peak gate current 2A

- V GM Maximum peak negative gate voltage

V GT

Maximum gate voltage required 3T J = - 40°C to trigger

2T J = 25°C Anode Supply = 6V resistive load

1

T J = 125°C I GD

Maximum gate current 90T J = - 40°C

required to trigger

60mA

T J = 25°C Anode Supply = 6V resistive load

35

T J = 125°C

V GD Maximum gate voltage that will not trigger I GD

Maximum gate current that will not trigger

Parameter

P100

Units Conditions

10Triggering

W V

0.2

V

T J = 125°C, rated V DRM applied

2

mA

T J = 125°C, rated V DRM applied

T J Max. operating temperature range -40 to 125T

stg

Max. storage temperature range

-40 to 125R thJC Max. thermal resistance,

2.24K/W DC operation per junctionjunction to case

R thCS Max. thermal resistance,

0.10K/W Mounting surface, smooth and greased

case to heatsink

T

Mounting torque, base to heatsink

4

Nm

wt Approximate weight 58 (2.0)g (oz)

Parameter

P100

Units

Conditions

Thermal and Mechanical Specification

°C A mounting compound is recommended and the torque should be checked after a period of 3 hours to allow for thespread of the compound

P100 SeriesBulletin I27125 rev. A 04/99

P100 SeriesBulletin I27125 rev. A 04/99

P100 SeriesBulletin I27125 rev. A 04/99P100 Series

7

Bulletin I27125 rev. A 04/99

http://www.doczj.com/doc/422068023.html WORLD HEADQUARTERS:233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 3223332.EUROPEAN HEADQUARTERS:

Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.IR CANADA:15 Lincoln Court,

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P0903BDG中文资料

P0903BDG中文资料

1 SEP-24-2004N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDG

TO-252 (DPAK)Lead-FreeNIKO-SEM

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS

Gate-Source Voltage VGS ±20 V

TC = 25 °C 50 Continuous Drain Current TC = 100 °C ID 35

Pulsed Drain Current1 IDM 200

Avalanche Current IAR 40 A

Avalanche Energy L = 0.1mH EAS 250

Repetitive Avalanche Energy2 L = 0.05mH EAR 8.6 mJ

TC = 25 °C 50 Power Dissipation TC = 100 °C PD 30 W

Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150

Lead Temperature (1/16” from case for 10 sec.) TL 275 °C

THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS

Junction-to-Case RθJC 2.5

Junction-to-Ambient RθJA 62.5

Case-to-Heatsink RθCS 0.6 °C / W

1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1󰄈 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOLTEST CONDITIONS MIN TYP MAXUNIT

NTS2101P中文资料

NTS2101P中文资料

© Semiconductor Components Industries, LLC, 2006March, 2006 − Rev. 11Publication Order Number:NTS2101P/DNTS2101P

Power MOSFET

−8.0 V, −1.4 A, Single P−Channel, SC−70

Features•Leading Trench Technology for Low RDS(on) Extending Battery Life•−1.8 V Rated for Low Voltage Gate Drive•SC−70 Surface Mount for Small Footprint (2 x 2 mm)•Pb−Free Package is Available

Applications•High Side Load Switch•Charging Circuit•Single Cell Battery Applications such as Cell Phones, Digital Cameras, PDAs, etc.MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)ParameterSymbolValueUnits

Drain−to−Source VoltageVDSS−8.0V

Gate−to−Source VoltageVGS±8.0V

Continuous Drain Current (Note 1)SteadyStateTA = 25°CID−1.4A

TA = 70°C−1.1

t ≤5 sTA = 25°C−1.5A

Power Dissipation(Note 1)Steady

StateTA = 25°CP

D0.29W

t ≤5 s0.33W

Pulsed Drain Currenttp = 10 msIDM−3.0A

HX03-P中文资料

HX03-P中文资料

Electrical dataPrimary nominalPrimary currentPrimary ConductorTyper.m.s. currentmeasuring rangeDiameter x Turns IPN (A) IP (A) (mm)3± 9 0.6d x 20THX 03-P

5± 15 0.8d x 12THX 05-P10± 301.1d x 6THX 10-P15± 451.4d x 4THX 15-P20± 601.6d x 3THX 20-P25± 751.6d x 2THX 25-P50± 150 1.2 x 6.3 x 1THX 50-PVOUTOutput voltage @ ± IPN, RL = 10 kΩ, TA = 25°C± 4 VROUTOutput impedance< 50ΩR LLoad resistance≥ 10kΩV

CSupply voltage (± 5 %)

1)± 15 VI CCurrent consumption< ± 15 mAVdR.m.s. voltage for AC isolation test, 50/60Hz, 1 mn> 3kVVeR.m.s. voltage for partial discharge extinctionat 10pC≥ 1kVImpulse withstand voltage, 1.2/50µs≥ 6kV Accuracy-Dynamic performance dataXAccuracy @ IPN, TA = 25°C (without offset) < ± 1% of IPNεLLinearity (0 .. ± IPN) < ± 1% of IPNVOEElectrical offset voltage, TA = 25°C < ± 40mVVOHHysteresis offset voltage @ IP = 0;after an excursion of 3 x IPN < ± 15mVVOTThermal drift of VOE max. ± 1.5mV/KTCεGThermal drift of the gain (% of reading) ± 0.1%/Kt rResponse time @ 90% of IP ≤ 3µsf Frequency bandwidth (-3 dB) 2) 50 kHz General dataTAAmbient operating temperature - 25 .. + 85°CTSAmbient storage temperature - 25 .. + 85°CmMass 8gMin. internal creepage distance/clearance ≥ 5.5 mmIsolation material group IStandards EN50178Current Transducer HX 03 .. 50-PFor the electronic measurement of currents: DC, AC, pulsed, mixed,with a galvanic isolation between the primary circuit (high power) andthe secondary circuit (electronic circuit).IPN=3 .. 50 A

BFR93P中文资料

BFR93P中文资料

NPN Silicon RF Transistor BFR 93P

ESD:Electrostaticdischarge sensitive device, observe handling precautions!

Maximum RatingsTypeMarkingPackage1)Pin ConfigurationBFR 93PQ62702-F1051GGSOT-23123BECOrdering Code(tape and reel)

ParameterSymbolValuesUnitCollector-emitter voltageVCE015VEmitter-base voltageVEB02.5Collector currentIC50mACollector-base voltageVCB020

Base currentIB10Junction temperatureTj150˚CAmbient temperature rangeTA– 65 … + 150Total power dissipation,TS≤65˚C3)Ptot280mW

Storage temperature rangeTstg– 65 … + 150Thermal ResistanceJunction - ambient2)Rth JA≤ 385K/WJunction - soldering point3)Rth JS≤ 305

1)For detailed information see chapter Package Outlines.2)Package mounted on alumina 15mm×16.7mm×0.7mm.3)TS is measured on the collector lead at the soldering point to the pcb.qFor low-distortion broadband amplifiers up to 1GHzat collector currents from 2mA to 30mA.qCECC-type available: CECC 50002/256. BFR 93P