单片机startup.a51文件标号和清零程序的内容详细解答1.标号IDATALEN EQU 80H ; the length of IDATA memory in bytes.这里IDATALEN只是一个标号而已，和idata不是一回事!你要是愿意，这段程序里的IDATALEN你完全可以改成dog呀，pig呀，playboy呀这些标号(其实我的理想是过猪一样的生活，不愁吃喝，无忧无虑，可惜做不到)，上面的这一句是说程序里面凡是用到IDATALEN的地方其实就是可以看成是80H这个数，你用80H去代替IDATALEN是完全对的。
之所以取IDATALEN这么个名字，只是为了好记，表明和idata有一点点关系，不至于你的程序长了，假使你本来是用了playboy作为标号的，写到后来你就会忘了playboy到底是什么含义了。
idata的范围是0～FFH。
如果你想改成FFH，完全可以。
2。
清零IF IDATALEN 0MOV R0,#IDATALEN - 1CLR AIDATALOOP: MOV @R0,ADJNZ R0,IDATALOOP关于这一段，很明显是在清零，如果上面idatalen=80H，那么是对0～7FH清零;如果你的程序是改写成：IDATALEN EQU 0100H ;就是对0～FFH清零。
还要注意的是那条IF语句，下面再谈。
二、如何按你意愿加载这段程序一般考虑到这个往往是你的设计中要区分上电复位和程序复位。
有时候当程序复位时你不希望一些内存单元被清零了，那么你不对startup.a51作点修改，就不行了。
默认是自动加载这段startup.a51的。
SiT8008BLow Power Programmable OscillatorFeatures⏹Any frequency between 1 MHz and 110 MHz accurate to6 decimal places⏹100% pin-to-pin drop-in replacement to quartz-based XO⏹Excellent total frequency stability as low as ±20 ppm⏹Operating temperature from -40°C to 85°C. For 125°C and/or-55°C options, refer to SiT1618, SiT8918, SiT8920⏹Low power consumption of 3.5 mA typical at 1.8V⏹Standby mode for longer battery life⏹Fast startup time of 5 ms⏹LVCMOS/HCMOS compatible output⏹Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5,5.0 x 3.2, 7.0 x 5.0 mm x mm⏹Instant samples with Time Machine II and field programmableoscillators⏹RoHS and REACH compliant, Pb-free, Halogen-free andAntimony-free⏹For AEC-Q100 oscillators, refer to SiT8924 and SiT8925Applications⏹Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books,SSD, GPON, EPON, etc⏹Ideal for high-speed serial protocols such as: USB,SATA, SAS, Firewire, 100M / 1G / 10G Ethernet, etc.Electrical CharacteristicsAll Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values are at 25°C and nominal supply voltage.Table 1. Electrical CharacteristicsSiT8008B Low Power Programmable OscillatorTable 1. Electrical Characteristics (continued)Table 2. Pin DescriptionTop ViewFigure 1. Pin Assignments1. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.2. A capacitor of value 0.1 µF or higher between Vdd and GND is required.1423OE/ST/NCGNDOUTVDDTable 3. Absolute Maximum LimitsAttempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.Note:3. Exceeding this temperature for extended period of time may damage the device.Table 4. Thermal Consideration[4]Note:4. Refer to JESD51 for θJA and θJC definitions, and reference layout used to determine the θJA and θJC values in the above table.Table 5. Maximum Operating Junction Temperature[5]Note:5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.Table 6. Environmental ComplianceHZHZHZTest Circuit and Waveform [6]VddVoutTestPointtr80% Vdd50% 20% VddNote:Figure 2. Test CircuitFigure 3. Waveform6. Duty Cycle is computed as Duty Cycle = T H/Period.Timing DiagramsPin 4T_start: Time to start from power-off T_resume: Time to resume from STFigure 4. Startup Timing (OE/ST Mode)Figure 5. Standby Resume Timing (ST Mode O nly)CLK OutputT_oe: Time to re-enable the clock outputT_oe: Time to put the output in High Z m odeFigure 6. OE Enable Timing (OE Mode Only)Figure 7. OE Disable Timing (OE Mode Only)Note:7. SiT8008 has “no runt” pulses and “no glitch” output during startup or resume.HZtfHigh Pulse (TH)Low Pulse (TL)Period5.5 5.0 4.5 4.03.5 010 20 30 40 50 60 70 80 90 100 110Frequency (MHz) -40 -30 -20 -10 010 20 3040 50 60 70 80Temperature (°C)Figure 8. Idd vs FrequencyFigure 9. Frequency vs T emperatureFigure 10. RMS Period Jitter vs FrequencyFigure 11. Duty Cycle vs FrequencyFigure 12. 20%-80% Rise Time vs TemperatureFigure 13. 20%-80% Fall Time vs T emperatureFigure 14. RMS Integrated Phase Jitter Random(12 kHz to 20 MHz) vs Frequency [9]Figure 15. RMS Integrated Phase Jitter Random(900 kHz to 20 MHz) vs Frequency [9]Notes:8. All plots are measured with 15 pF load at room temperature, unless otherwise stated.9. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies below 40 MHz.10305070 90 110Frequency (MHz)Programmable Drive StrengthThe SiT8008 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. Benefits from the programmable drive strength feature are:⏹Improves system radiated electromagnetic interfer-ence (EMI) by slowing down the clock rise/fall time. ⏹Improves the downstream clock receiver’s (RX) jitterby decreasing (speeding up) the clock rise/fall time. ⏹Ability to drive large capacitive loads while maintainingfull swing with sharp edge rates.For more detailed information about rise/fall time control and drive strength selection, see the SiTime Application Notes section: /support/application-notes.EMI Reduction by Slowing Rise/Fall TimeFigure 16 shows the harmonic power reduction as the rise/fall times are increased (slowed down). The rise/fall times are expressed as a ratio of the clock period. For the ratio of 0.05, the signal is very close to a square wave. For the ratio of 0.45, the rise/fall times are very close to near-triangular waveform. These results, for example, show that the 11th clock harmonic can be reduced by 35 dB if the rise/fall edge is increased from 5% of the period to 45% of the period.Jitter Reduction with Faster Rise/Fall TimePower supply noise can be a source of jitter for the down-stream chipset. One way to reduce this jitter is to speed up the rise/fall time of the input clock. Some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. Refer to the Rise/Fall Time Tables (Table 7 to Table 11) to determine the proper drive strength.High Output Load CapabilityThe rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. As an example, for a 3.3V SiT8008 device with default drive strength setting, the typical rise/fall time is 1 ns for 15 pF output load. The typical rise/fall time slows down to 2.6 ns when the output load increases to 45 pF. One can choose to speed up the rise/fall time to 1.83 ns by then increasing the drive strength setting on the SiT8008. The SiT8008 can support up to 60 pF or higher in maxi-mum capacitive loads with drive strength settings. Refer to the Rise/Fall Time Tables (Table 7 to 11) to determine the proper drive strength for the desired combination of output load vs. rise/fall time.SiT8008 Drive Strength SelectionTables 7 through 11define the rise/fall time for a given capacitive load and supply voltage.1. Select the table that matches the SiT8008 nominalsupply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V).2. Select the capacitive load column that matches theapplication requirement (5 pF to 60 pF)3. Under the capacitive load column, select the desiredrise/fall times.4. The left-most column represents the part numbercode for the corresponding drive strength.5. Add the drive strength code to the part number forordering purposes.Calculating Maximum FrequencyAny given rise/fall time in Table 7 through 11dictates the maximum frequency under which the oscillator can operate with guaranteed full output swing over the entire operating temperature range. This max frequency can be calculated as the following:=15 x Trf_20/80Max Frequencywhere Trf_20/80 is the typical value for 20%-80% rise/fall time.Example 1Calculate f MAX for the following condition:⏹Vdd = 1.8V (Table 7)⏹Capacitive Load: 30 pF⏹Desired Tr/f time = 3 ns (rise/fall time part numbercode = E)⏹f MAX = 66.666660Part number for the above example:SiT8008I E12-18E-66.666660Drive strength code is inserted here. Def ault setting is “-”Figure 16. Harmonic EMI reduction as a Function of Slower Rise/Fall TimeRise/Fall Time (20% to 80%) vs C LOAD TablesTable 7. Vdd = 1.8V Rise/Fall Times for Specific C LOAD Table 8. Vdd = 2.5V Rise/Fall Times for Specific C LOADTable 9. Vdd = 2.8V Rise/Fall Timesfor Specific C LOADTable 10. Vdd = 3.0V Rise/Fall Timesfor Specific C L OA DTable 11. Vdd = 3.3V Rise/Fall Timesfor Specific C LOA DPin 1 Configuration Options (OE, ST, or NC) Pin 1 of the SiT8008 can be factory-programmed to support three modes: Output Enable (OE), standby (ST) or No Con-nect (NC). These modes can also be programmed with the Time Machine using field programmable devices.Output Enable (OE) ModeIn the OE mode, applying logic Low to the OE pin only disables the output driver and puts it in Hi-Z mode. The core of the device continues to operate normally. Power consumption is reduced due to the inactivity of the output. When the OE pin is pulled High, the output is typically en-abled in <1 µs.Standby (ST) ModeIn the ST mode, a device enters into the standby mode when Pin 1 pulled Low. All internal circuits of the device are turned off. The current is reduced to a standby current, typi-cally in the range of a few µA. When ST is pulled High, the device goes through the “resume” process, which can take up to 5 ms.No Connect (NC) ModeIn the NC mode, the device always operates in its normal mode and outputs the specified frequency regardless of the logic level on pin 1.Table 12 below summarizes the key relevant parameters in the operation of the device in OE, ST, or NC mode.Table 12. OE vs. ST vs. NCOutput on Startup and ResumeThe SiT8008 comes with gated output. Its clock output is ac-curate to the rated frequency stability within the first pulse from initial device startup or resume from the standby mode. In addition, the SiT8008 features “no runt” pulses and “no glitch”output during startup or resume as shown in the waveform captures in Figure 17 and Figure 18.Figure 18. Startup Waveform vs. Vdd(Zoomed-in View of Figure 17)Instant Samples with Time Machine and Field Programmable OscillatorsSiTime supports a field programmable version of the SiT8008 low power oscillator for fast prototyping and real time custom- ization of features. The field programmable devices(FP devices) are available for all five standard SiT8008 package sizes and can be configured to one’s exact specification using the Time Machine II, an USB powered MEMS oscillator programmer.Customizable Features of the SiT8008 FP Devices Include⏹Frequency between 1 MHz to 110 MHz⏹Three frequency stability options, ±20 ppm, ±25ppm, ±50 ppm⏹Two operating temperatures, -20 to 70°C or -40 to 85°C⏹Six supply voltage options, 1.8V, 2.5V, 2.8V, 3.0V,3.3V and⏹ 2.25 to 3.63V continuous⏹Output drive strength⏹OE, ST or NC modeFor more information regarding SiTime’s field programm a-ble solutions, visit /time-machine and /fp-devices.SiT8008 is typically factory-programmed per customer ordering codes for volume delivery.Figure 17. Startup Waveform vs. VddDimensions and PatternsDimensions and PatternsNotes:10. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the as sembly location of thedevice.11. A capacitor of value 0.1 µF or higher between Vdd and GND is required.Ordering InformationThe Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime Part Number Generator.Table 13. Ordering Codes for Supported Tape & Reel Packing MethodPacking Method“D”: 8 mm Tape & Reel, 3ku r eel “E”: 8 mm Tape & Reel, 1ku reel “T”: 12/16 mm Tape & Reel, 3ku reel “Y”: 12/16 mm Tape & Reel, 1ku reel Blank for BulkFrequency1.000000 to 110.000000 MHz Feature Pin“E” for Output Enable “S” for Standby “N” for No Connect Supply Voltage“18” for 1.8V ±10% “25” for 2.5V ±10% “28” for 2.8V ±10% “30” for 3.0V ±10% “33” for 3.3V ±10%“XX” for 2.5V -10% to 3.3V +10% Part Family “SiT8008” Revision Letter “B” is the revisionTemperature Range“C” Commerci al, -20ºC to 70ºC “I” Industrial, -40ºC to 85ºC Output Drive Strength “–” Default (datasheet limits) See Tables 7 to 11 for rise/fall times “L” “T” “A” “E” “R” “U” “B” “F” Package Size “7” 2.0 x 1.6 mm “1” 2.5 x 2.0 mm “2” 3.2 x 2.5 mm “3” 5.0 x 3.2 mm “8” 7.0 x 5.0 mmFrequency Stability “1” for ±20 ppm “2” for ±25 ppm “3” for ±50 ppmSiT8008BC-12-18E-66.666660DTable 14. Additional InformationTable 15. Revision HistorySiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439© SiTime Corporation 2014-2017. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or l iability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.CRITICAL USE EXCLUSION POLICYBUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products doesSupplemental InformationBest ReliabilitySilicon is inherently more reliable than quartz. Unlike quartz suppliers, SiTime has in-house MEMS and analog CMOS expertise, which allows SiTime to develop the most reliable products. Figure 1 shows a comparison with quartz technology.Why is EpiSeal™ MEMS Best in Class:⏹SiTime’s MEMS resonators are vacuum sealed usingan advanced EpiSeal™ process, which eliminates foreign particles and improves long term aging andreliability⏹World-class MEMS and CMOS design expertise38Figure 1. Reliability Comparison[1]Best AgingUnlike quartz, MEMS oscillators have excellent long term aging performance which is why every new SiTime product specifies 10-year aging. A comparison is shown in Figure 2.Why is EpiSeal MEMS Best in Class:⏹SiTime’s MEMS resonators are vacuum sealed usingan advanced EpiSeal™ process, which eliminates foreign particles and improves long term aging and reliability⏹Inherently better immunity of electrostatically drivenMEMS resonatorFigure 2. Aging Comparison[2]Best Electro Magnetic Susceptibility (EMS)SiTime’s oscillators in plastic packages are up to 54 times more immune to external electromagnetic fields than quartz oscillators as shown in Figure 3.Why is EpiSeal MEMS Best in Class:⏹Internal differential architecture for best commonmode noise rejection⏹Electrostatically drivenMEMS resonator is more immune to EMSFigure 3. Electro Magnetic Susceptibility (EMS)[3] Best Power Supply Noise RejectionSiTime’s MEMS oscillators are more resilient against noise on the power supply. A comparison is shown in Figure 4. Why is EpiSeal MEMS Best in Class:⏹On-chip regulators and internal differential architecturefor common mode noise rejection⏹MEMS resonator is paired with advanced analogCMOS ICFigure 4. Power Supply Noise Rejection[4]Best Vibration RobustnessHigh-vibration environments are all around us. All electronics, from handheld devices to enterprise servers and storage systems are subject to vibration. Figure 5 shows a comparison of vibration robustness.Why is EpiSeal MEMS Best in Class:⏹The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz⏹ Center-anchored MEMS resonator is the most robustdesignFigure 5. Vibration Robustness [5]Best Shock RobustnessSiTime’s oscillators can withstand at least 50,000 g shock. They all maintain their electrical performance in operation during shock events. A comparison with quartz devices is shown in Figure 6.Why is EpiSeal MEMS Best in Class:⏹The moving ma ss of SiTime’s MEMS resonators is up to 3000 times smaller than quartz⏹Center-anchored MEMS resonator is the most robustdesignFigure 6. Shock Robustness [6]Figure labels: ▪ TXC = TXC ▪ Epson = EPSN▪ Connor Winfield = CW ▪ Kyocera = KYCA ▪ SiLabs = SLAB▪SiTime = EpiSeal MEMSNotes:1. Data source: Reliability documents of named companies.2. Data source: SiTime and quartz oscillator devices datasheets.3. Test conditions for Electro Magnetic Susceptibility (EMS):▪According to IEC EN61000-4.3 (Electromagnetic compatibility standard)▪Field strength: 3V/m▪Radiated signal modulation: AM 1 kHz at 80% depth▪Carrier frequency scan: 80 MHz – 1 GHz in 1% steps▪Antenna polarization: Vertical▪DUT position: Center aligned to antennaDevices used in this test:4. 50 mV pk-pk Sinusoidal voltage.Devices used in this test:5. Devices used in this test:same as EMS test stated in Note 3.6. Test conditions for shock test:▪MIL-STD-883F Method 2002▪Condition A: half sine wave shock pulse, 500-g, 1ms▪Continuous frequency measurement in 100 μs gate time for 10 secondsDevices used in this test:same as EMS test stated in Note 3.7. Additional data, including setup and detailed results, is available upon request to qualified customer. Please contact *************************.Mouser ElectronicsAuthorized DistributorClick to View Pricing, Inventory, Delivery & Lifecycle Information:S iTime:SiT8008BI-82-25E-40.00000X SIT8008BI-12-25E-80.000000G SIT8008BI-12-33E-62.500000G SIT8008BI-73-33E-31.250000G SIT8008BI-12-25E-25.000000G SiT8008BC-81-33E-4.718592X SiT8008BI-13-18E-24.000000GSiT8008BI-23-33E-16.000000G SiT8008BC-11-33S-13.91222G SiT8008BC-11-33S-14.64000G SiT8008BC-33-18E-33.333330X SiT8008BI-73-33E-80.000000G SIT8008BI-31-33E-6.000000G SIT8008BI-31-33E-80.000000XSiT8008BI-32-18E-98.304000X SIT8008BI-33-33S-90.000000X SIT8008BI-73-25E-33.333330G SiT8008BI-73-33E-20.000000G SIT8008BI-31-33E-050.211000X SIT8008BI-31-33E-059.407060X SIT8008BI-31-33E-100.000000XSIT8008BI-31-33E-12.000000G SIT8008BI-31-33E-27.299640X SIT8008BI-31-33E-59.497670X SIT8008BI-12-18S-12.00000G SIT8008BI-12-18S-2.048000G SiT8008BI-13-33E-16.000000G SiT8008BI-13-33E-3.6864000GSiT8008BI-21-18S-70.00000G SiT8008BI-22-33E-24.000000G SiT8008BC-33-33E-4.718592X SiT8008BC-71-18E-10.000000G SIT8008BI-11-18E-33.333333G SIT8008BI-11-25E-66.000000G SIT8008BI-12-18E-20.7500GSIT8008BI-12-18E24.54545G SiT8008BI-33-18E-100.000000Y SiT8008BC-23-25E-32.000000G SiT8008BI-12-33E-65.000000E SiT8008BIL11-33S-24.806000E SiT8008BC-12-33S-8.000000E SiT8008BC-82-33E24.998125XSiT8008BC-12-33S-8.000000G SiT8008BC-82-33E24.998125Y SiT8008BI-21-33E-45.000000G SiT8008BI-21-33E-45.000000E SIT8008BC-83-33E-2.457600Y SIT8008BI-12-33E-65.000000G SiT8008BI-11-33E-47.388500ESiT8008BI-33-33E-16.000000Y SiT8008BI-33-33E-16.000000X SiT8008BIR23-XXS-100.000000E SiT8008BIR23-XXS-100.000000G SiT8008BI-31-XXS-10.00000X SiT8008BI-33-18E-100.000000X SIT8008BC-83-33E-2.457600X SiT8008BC-23-25E-32.000000E SIT8008BIL11-33S-24.806000G SiT8008BI-11-33E-47.388500G SiT8008BI-31-XXS-10.00000Y SiT8008BI-83-33E-25.000000Y SiT8008BI-12-XXE-1.843200E SiT8008BI-12-18E-11.289600ESiT8008BI-12-XXE-8.000000E SIT8008BI-83-33E-66.666000Y SiT8008BI-32-33E-8.000000Y SiT8008BI-12-18E-1.843200E SiT8008BI-82-33E-100.000000Y SiT8008BI-12-18E-8.000000E SiT8008BI-12-33E-11.289600ESiT8008BI-82-33E-16.000000Y SiT8008BI-12-25E-11.289600E SiT8008BC-82-33E-3.686400Y SiT8008BC-82-33E-12.288000Y SiT8008BI-32-33E-12.288000Y SiT8008BI-22-33E-2.048000E SiT8008BI-13-XXS-25.000000GSiT8008BC-12-33S-18.100000G SiT8008BC-23-33E-90.000000G SiT8008BC-12-33E-24.000000G SiT8008BI-11-18E-28.636363E。
PCE-5120 Startup Manual1PCE-5120 LGA775 Intel® Pentium® D / Pentium® 4 / Celeron® D Processor Card with PCI Express / IPMI / VGA / Dual Gigabit LANBefore you begin installing your card, please make sure that the following materials have been shipped:If any of these items are missing or damaged, contact your distributor or sales representative immediately.Note 1: For detailed contents of the PCE-5120, pleaserefer to the enclosed CD-ROM (in PDF format).Note 2: Acrobat Reader is required to view any PDF file.Acrobat Reader can be downloaded at: /Prodindex/acrobat/read-step.html (Acrobat is a trademark of Adobe.)Standard SBC Functions• CPU: Supports Intel® LGA 775 Pentium® D/ Pentium® 4/ Celeron® D processors up to 3.2/3.8/3.06 GHz, FSB 533/800 MHz.• BIOS: Award® 4 Mb Flash memory BIOS • Chipset: Intel® 945G with ICH7R• System Memory: Dual Channel; Four 240-pin DIMM sockets accepts up to 4 GB DDR2 533/667 SDRAM Note: Due to inherent limitations of the PC architecture,the system may not fully detect 4 GB RAM if 4 GB RAM is installed.• SATA/IDE interface: Supports up to four independent SA T A2 hard drives (up to 300MB/s) with software RAID 0,1, 5,10 functions; supports up to one IDE hard disk drives, or two enhanced IDE devices. The IDE port may be altered to a T ype II CF socket.• FDD interface: Supports up to two FDDs• Serial ports: Four serial RS-232 ports; COM2 can be configured to RS-232/422/485 thru pin header• Parallel port: One parallel port, supports SPP/EPP/ECP mode• Keyboard/mouse connector: Supports one standard PS/2 keyboard and mouse connector and one external 6-pin pin header.• Watchdog timer: 255 level timer intervals• USB (2.0): Four Universal Serial Bus ports to Backplane and four ports on boardVGA Interface• Chipset: Intel® 945G integrated• Display memory: Shared with 224 MB system memory • Video Output: Up to 2048 x 1536 @ 75 Hz refresh • External Card: PCI Express X16 Graphic Card inter-face to back planeEthernet Interface• Chipset:LAN1: Intel 82573V (PCIe GbE)LAN2: Intel 82573V (PCIe GbE)• Connection: On-board RJ-45 connector x 2Mechanical and Environmental• Dimensions: (L x W): 338 x 122 mm • Power supply voltage: +5 V ± 12 V • Power requirements:CPU: Intel® Pentium® D 3.2 GHz/2M/800/130W MEMORY: DDR2 667 MHz 1 GB x 4T est program,Intel Max power 100% + BurnIn T est 4.0+12V 15 A +5V 2 A +3.3V 20 A +5VSB 0.7 A -12V 0 A -5V 0 A• Operating temperature: 0 ~ 55 °C (depending on CPU)• Weight: 0.5 kg (weight of board)• 1 PCE-5120 Dual Intel® Pentium® D/Pentium® 4/Celeron® D processor-based single board computer • 1 PCE-5120 Startup Manual• 1 CD with driver utility and manual (in PDF format)• 1 FDD cablep/n: 1700340640• 1 Ultra A T A 66/100 HDD cables p/n: 1701400452• 2 Serial A T A HDD data cable p/n: 1700071000• 2 Serial A T A HDD power cable p/n: 1703150102• 1 Printer (parallel) port & COM port cable kitp/n: 1701260305• 1 Dual COM port cable kit p/n: 1701092300• 1 Y cable for PS/2 keyboard and PS/2 mouse p/n: 1700060202• 1 CPU coolerp/n: 1750000400• 1 USB cable with 4 ports p/n: 1700002314• Warranty card4 D2 PCE-5120 Startup ManualThe board has a number of connectors and jumpers that allow you to configure your system to suit your application.The table below lists the function of each of the connec-tors and jumpers.ConnectorsJumpers* default setting* default setting• The CD disc contains a driver installer program that will lead you through the installation of various device driv-ers needed to take full advantage of your CPU card.The computer is provided with a battery-powered Real-time Clock circuit. There is a danger of explo-sion if battery is incorrectly replaced. Replace only with same or equivalent type recommended by the manufacturer. Discard used batteries according to manufacturer's instructionsThis device complies with the requirements in Part 15of the FCC rules. Operation is subject to the following two conditions:1. This device may not cause harmful interference.2. This device must accept any interference received, including interference that may cause undesired operation.IDE1Primary IDE connector FDD1 Floppy drive connector LPT1 Parallel port VGA1VGA connectorCOM1 Serial port:COM1 ( 9-pin connector)COM2 Serial port:COM2 ( 9-pin connector)COM3 Serial port:COM3 ( 9-pin connector)COM4 Serial port:COM4 ( 9-pin connector)KBMS1 PS/2 keyboard and mouse connector KBMS2 External keyboard/mouse connector JIR1ReservedCPUFAN1 C PU1 FAN connectorJFP1 Power and Reset Button connectorJFP2 HDD LED/SNMP SMbus/Speaker connector JFP3 Power LED and keyboard lock connector JOBS1HW Monitor AlarmClose: Enable OBS Alarm Open: Disable OBS AlarmLAN1Giga LAN RJ45 connector LAN2Giga LAN RJ45 connector AC97AC’97 Link connector SATA1 Serial ATA1SATA2Serial ATA2SATA3 Serial ATA3SATA4Serial ATA4LANLED1LAN1 and LAN2 LED connector BMC1BMC connector USB12Two USB port pin headers USB34Two USB port pin headersEXPCI1HIROSA Extended PCI connector (Optional)CMOS1CMOS clearJWDT1Watchdog timer output selection JSETCOM2COM2 RS232/422/485 selectionClosed Pins Result 1-2Keep CMOS data*2-3Clear CMOS* default settingClosed Pins Result 1-2Reserved 2-3System reset *COM2 Port FunctionJumper Configuration RS-232*RS-422RS-485The location of all connectors and jumpers:Board Layout: Jumper and Connector LocationPCE-5120 Startup Manual 3Please ensure that the CPU cooler included with the PCE-5120 is installed as follows:4 PCE-5120 Startup Manual。
;******************** (C) COPYRIGHT 2009 STMicroelectronics ********************;* File Name : startup_stm32f10x_hd.s ;文件名;* Author : MCD Application Team;* Version : V3.0.0;版本号;* Date : 04/06/2009;* Description : STM32F10x High Density Devices vector table for RVMDK;* toolchain.;此文件为STM32F10x高密度设备MDK工具链的启动文件;* This module performs: ;该模块执行以下操作;* - Set the initial SP;设置初始化堆栈指针（SP）;* - Set the initial PC == Reset_Handler;设置初始化程序计数器(PC)为复位向量，并在执行main函数前初始化系统时钟;* - Set the vector table entries with the exceptions ISR address ;设置向量表入口为异常事件的入口地址;* - Configure external SRAM mounted on STM3210E-EVAL board;* to be used as data memory (optional, to be enabled by user);* - Branches to __main in the C library (which eventually;* calls main()).;* After Reset the CortexM3 processor is in Thread mode,;* priority is Privileged, and the Stack is set to Main.;复位之后处理器为线程模式，优先级为特权级，堆栈设置为MSP主堆栈;* <<< Use Configuration Wizard in Context Menu >>>;****************************************************************************** *; THE PRESENT FIRMWARE WHICH IS FOR GUIDANCE ONLY AIMS AT PROVIDING CUSTOMERS; WITH CODING INFORMATION REGARDING THEIR PRODUCTS IN ORDER FOR THEM TO SAVE TIME.; AS A RESULT, STMICROELECTRONICS SHALL NOT BE HELD LIABLE FOR ANY DIRECT,; INDIRECT OR CONSEQUENTIAL DAMAGES WITH RESPECT TO ANY CLAIMS ARISING FROM THE; CONTENT OF SUCH FIRMWARE AND/OR THE USE MADE BY CUSTOMERS OF THE CODING; INFORMATION CONTAINED HEREIN IN CONNECTION WITH THEIR PRODUCTS.;****************************************************************************** *; Amount of memory (in bytes) allocated for Stack; Tailor this value to your application needs; <h> Stack Configuration; <o> Stack Size (in Bytes) <0x0-0xFFFFFFFF:8>; </h>Stack_Size EQU 0x00000200;定义堆栈大小AREA STACK, NOINIT, READWRITE, ALIGN=3;堆栈段，未初始化，允许读写，8字节边界对齐;说明: Cortex-M3的指令地址要求是字边界对齐（4字节）；但是代码段是8字节边界对齐的Stack_Mem SPACE Stack_Size;分配堆栈空间，把首地址赋值给Stack_Mem__initial_sp;初始化堆栈指针，指向堆栈顶。
