2SK3405-ZJ中文资料

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.©1999, 2000Document No.D14639EJ2V0DS00 (2nd edition)Date Published April 2001 NS CP(K)Printed in JapanDATA SHEETDESCRIPTIONThe 2SK3405 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics,designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.FEATURES•4.5-V drive available •Low on-state resistanceR DS(on)1 = 9.0 m Ω MAX. (V GS = 10 V, I D = 24 A)•Low gate chargeQ G = 34 nC TYP. (I D = 48 A, V DD = 16 V, V GS = 10 V)•Built-in gate protection diode •Surface mount device availableABSOLUTE MAXIMUM RATINGS (T A = 25°C )Drain to Source Voltage (V GS = 0 V)V DSS 20V Gate to Source Voltage (V DS = 0 V)V GSS ±20V Drain Current (DC) (T C = 25°C)I D(DC)±48A Drain Current (Pulse)NoteI D(pulse)±192A Total Power Dissipation (T A = 25°C)P T1 1.5W Total Power Dissipation (T C = 25°C)P T250W Channel Temperature T ch 150°C Storage TemperatureT stg−55 to +150°CNote PW ≤ 10 µs, Duty Cycle ≤ 1%ORDERING INFORMATIONPART NUMBERPACKAGE 2SK3405TO-220AB 2SK3405-ZK TO-263(MP-25ZK)2SK3405-ZJTO-263(MP-25ZJ)The mark # shows major revised points.2ELECTRICAL CHARACTERISTICS(T A = 25°C)CHARACTERISTICSSYMBOL TEST CONDITIONS MIN.TYP.MAX.UNITDrain Leakage Current I DSS V DS= 20 V, V GS = 0 V 10µA Gate Leakage Current I GSS V GS = ±20 V, V DS = 0 V ±10µA Gate Cut-off Voltage V GS(off)V DS = 10 V, I D = 1 mA 1.5 2.5V Forward Transfer Admittance | y fs|V DS = 10 V, I D = 24 A 12.5S Drain to Source On-state ResistanceR DS(on)1V GS = 10 V, I D = 24 A 6.59.0m ΩR DS(on)2V GS = 4.5 V, I D = 24 A 9.914.0m ΩInput Capacitance C iss 1800pF Output CapacitanceC oss 770pF Reverse Transfer Capacitance C rss V DS = 10 V V GS = 0 V f = 1 MHz400pF Turn-on Delay Time t d(on)21ns Rise Timet r 13ns Turn-off Delay Time t d(off)64ns Fall Timet f V DD = 10 V , I D = 24 A V GS(on) = 10 V R G = 10 Ω25ns Total Gate Charge Q G 34nC Gate to Source Charge Q GS 6.6nC Gate to Drain Charge Q GD V DD = 16 V V GS = 10 V I D = 48 A11nC Diode Forward Voltage V F(S-D)I F = 48 A, V GS = 0 V 1.0V Reverse Recovery Time t rr 38ns Reverse Recovery ChargeQ rrI F = 48 A, V GS = 0 V di/dt = 100 A/µs29nCTEST CIRCUIT 2 GATE CHARGETEST CIRCUIT 1 SWITCHING TIME 0V LDDτ = 1 s µDuty Cycle ≤ 1 %PG.L DD3TYPICAL CHARACTERISTICS (T A = 25°C)DRAIN CURRENT vs.DRAIN TO SOURCE VOLTAGEV DS - Drain to Source Voltage - VI D - D r a i n C u r r e n t - AFORWARD TRANSFER CHARACTERISTICS V GS - Gate to Source Voltage - V I D - D r a i n C u r r e n t - A1010.11001000GATE TO SOURCE CUT-OFF VOLTAGE vs.CHANNEL TEMPERATURET ch - Channel Temperature - ˚CV G S (o f f ) - G a t e t o S o u r c e C u t -o f f V o l t a g e - VV DS = 10 V I D = 1 mA1.01.50.52.02.53.0−500501001500 | y f s | - F o r w a r d T r a n s f e r A d m i t t a n c e - SFORWARD TRANSFER ADMITTANCE vs.DRAIN CURRENT I D- Drain Current - ADRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE V GS - Gate to Source Voltage - V R D S (o n ) - D r a i n t o S o u r c e O n -s t a t eR e s i s t a n c e - m Ω0015205DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENTI D - Drain Current - AR D S (o n ) - D r a i n t o S o ur c e O n -s t a t e R e s i s t a n c e - m Ω104DRAIN TO SOURCE ON-STATE RESISTANCE vs.CHANNEL TEMPERATURET ch - Channel Temperature - ˚CRDS(on)-DraintoSourceOn-stateResistance-mΩ−4250100150861618121410SOURCE TO DRAIN DIODEFORWARD VOLTAGEISD-DiodeForwardCurrent-AV SD - Source to Drain Voltage - VREVERSE RECOVERY TIME vs.DIODE FORWARD CURRENTI SD - Diode Forward Current - Atrr-ReverseRecoveryTime-nsdi/dt = 100 A/ sV GS = 0 V10.1101101001000100µDYNAMIC INPUT/OUTPUT CHARACTERISTICSVGS-GatetoSourceVoltage-VQ G - Gate Charge - nCVDS-DraintoSourceVoltage-V6391215184812 CAPACITANCE vs. DRAIN TOSOURCE VOLTAGEV DS- Drain to Source Voltage - VC iss,C oss,C rss-Capacitance-pF100100010000SWITCHING CHARACTERISTICSI D - Drain Current - Atd(on),tr,td(off),tf-SwitchingTime-ns5DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREAT ch - Channel Temperature - ˚C d T - P e r c e n t a g e o f R a te d P o w e r - %40206010014080120160020406080100#FORWARD BIAS SAFE OPERATING AREAI D - D r a i n C u r r e n t - A6PACKAGE DRAWINGS (Unit: mm)1)TO-220AB (MP-25)2)TO-263 (MP-25ZK)3)TO-263 (MP-25ZJ)EQUIVALENT CIRCUITRemark The diode connected between the gate and source of the transistor serves as a protector against ESD.When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.Body DiodeDiodeDrain[MEMO]7The information in this document is current as of April, 2001. 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