LN78资料
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1Infrared Light Emitting Diodes
R0.612
R1.22-0.45±0.152-1.2±
0.31.22.9±0.254.5±0.3
3.9±0.3
12.8 min.Not soldered
2.4
2.81.51.7±0.20.90.8ø2.4
1: Cathode2: AnodeUnit : mm
2.540.45±0.15LN78
GaAlAs Infrared Light Emitting Diode
For optical control cystems
Absolute Maximum Ratings (Ta = 25˚C)
ParameterSymbolRatingsUnit
Power dissipationPD180mW
Forward current (DC)IF100mA
Pulse forward currentIFP*1A
Reverse voltage (DC)VR3V
Operating ambient temperatureTopr–25 to+85˚C
Storage temperatureTstg–30 to +100˚C* f = 100 Hz, Duty cycle = 0.1 % Features
High-power output, high-efficiency : PO = 10 mW (typ.)
High-speed modulation capability : fC = 12 MHz
Electro-Optical Characteristics (Ta = 25˚C)
ParameterSymbolConditionsmintypmaxUnitRadiant powerPOIF = 50mA610mW
Peak emission wavelengthλPIF = 50mA880nm
Spectral half band width∆λIF = 50mA50nm
Forward voltage (DC)VFIF = 100mA1.51.8V
Reverse current (DC)IRVR = 3V10µA
Capacitance between pinsCtVR = 0V, f = 1MHz50pF
Half-power angleθThe angle in which radiant intencity is 50%40deg.
Cutoff frequencyfC*IFP = 50mA + 10mAp-p12MHz
* Frequency when modulation optical power decreases by 3dB from 1MHz.(10 log PO(fCMHz) = – 3) PO(1MHz)元器件交易网www.cecb2b.com2Infrared Light Emitting DiodesLN78
IF — Ta
120
100
80
60
40
20
Ambient temperature Ta (˚C )Allowable forward current IF (mA)
0204060801000– 25IFP — Duty cycle
10 2
10
1
10 –1
Duty cycle (%)Pulse forward current IFP (A)
11010 210 –210 –1IFP — VF10 4
10 3
10 2
10
1
Forward voltage VF (V)Pulse forward current IFP (mA)
1352410 –10tw = 10µsf = 100HzTa = 25˚C
∆PO — Ta
10
1
Ambient temperature Ta (˚C )IF = 50mA
Relative radiant power ∆PO
– 400408010 –1
λP — Ta
920
900
880
860
840
820
Ambient temperature Ta (˚C )IF = 50mA
Peak emission wavelength λP (nm)
– 4004080120Spectral characteristics
100
80
60
40
20
Wavelength λ (nm)Relative radiant intensity (%)
800850900950100010500750IF = 50mATa = 25˚C∆PO — IFP10 2
10
1
10 –1
Pulse forward current IFP (mA)Relative radiant power ∆PO
10 21010 –210 3(1) tw = 10µs f = 100Hz(2) DC Ta = 25˚C
12.2
1.8
1.4
1.0
0.6VF — Ta
Ambient temperature Ta (˚C )Forward voltage VF (V)
– 4004080120
0˚10˚20˚
30˚
40˚
50˚
60˚70˚80˚90˚Directivity characteristics
2090100
807060504030Relative radiant intensity(%)IF = 100mA
50mA(1)
(2)元器件交易网www.cecb2b.com