HCS245MS中文资料

FN2468Rev 1.00December 1992HCS245MSRadiation Hardened Octal Bus Transceiver, Three-State, Non-InvertingDATASHEETFeatures• 3 Micron Radiation Hardened CMOS SOS •Total Dose 200K or 1 Mega-RAD(Si)•Latch-Up Free Under Any Conditions •Fanout (Over Temperature Range)-Bus Driver Outputs - 15 LSTTL Loads •Military Temperature Range: -55o C to +125o C •Significant Power Reduction Compared to LSTTL ICs •DC Operating Voltage Range: 4.5V to 5.5V •LSTTL Input Compatibility -VIL = 0.8V Max -VIH = VCC/2 Min•Input Current Levels Ii ≤ 5μA at VOL, VOHDescriptionThe Intersil HCS245MS is a Radiation Hardened Non-Invert-ing Octal Bidirectional Bus Transceiver, Three-State,intended for two-way asynchronous communication between data busses. The HCS245MS allows data transmission from the A bus to the B bus or from the B bus to the A bus. The logic level at the direction input (DIR) determines the data direction. The output enable input (OE) puts the I/O port in the high-impedance state when high.The HCS245MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.The HCS245MS is supplied in a 20 lead Weld Seal Ceramic flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line Package (D suffix).Truth TablePinouts20 PIN CERAMIC DUAL-IN-LINEMIL-STD-1835 DESIGNATOR CDIP2-T20, LEAD FINISH CTOP VIEW20 PIN CERAMIC FLAT PACKMIL-STD-1835 DESIGNATOR CDFP4-F20, LEAD FINISH CTOP VIEWFunctional DiagramCONTROL INPUTS OPERATION OE DIR L L B Data to A Bus L H A Data to B Bus HXIsolationH = High Voltage Level, L = Low Voltage Level, X = ImmaterialTo prevent excess currents in the High-Z (Isolation) modes, all I/O terminals should be terminated with 10k Ω to 1M Ω resistors.1112131415161718201910987654321DIR A0A1A2A3A4A6A5A7GND VCC B0B1B2OE B3B4B5B6B72345678120191817161514139101211DIR A0A1A2A3A4A6A5A7GNDVCC B0B1B2OE B3B4B5B6B7ONE OF 8 TRANSCEIVERSB DATADIROUTPUT ENABLE A DATAAbsolute Maximum Ratings Reliability InformationSupply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs. . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA (All Voltage Reference to the VSS Terminal)Storage Temperature Range (TSTG) . . . . . . . . . . -65o C to +150o C Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . .+265o C Junction Temperature (TJ). . . . . . . . . . . . . . . . . . . . . . . . . . .+175o C ESD Classification. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Class 1Thermal Impedance . . . . . . . . . . . . . . . .θjaθjc Weld Seal DIC. . . . . . . . . . . . . . . . . . .75o C/W16o C/W Weld Seal Flat Pack . . . . . . . . . . . . . .64o C/W12o C/W Power Dissipation per Package (PD)For T A = -55o C to +100o C. . . . . . . . . . . . . . . . . . . . . . . . . . . . .1W For T A = +100o C to +125o C Derate Linearly at 13mW/o CCAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent dam-age. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electri-cal Performance Characteristics” are the only conditions recommended for satisfactory device operation.Operating ConditionsSupply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . .+4.5V to +5.5V Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . . . 500ns Max. Operating Temperature Range (T A) . . . . . . . . . . . -55o C to +125o C Input Low Voltage (VIL) . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC Input High Voltage (VIH). . . . . . . . . . . . . . . . . . 70% of VCC to VCCTABLE 1.DC. ELECTRICAL PERFORMANCE CHARACTERISTICSPARAMETERS SYMBOL(NOTE 1)CONDITIONSGROUP ASUB-GROUPS TEMPERATURELIMITSUNITSMIN MAXQuiescent Current ICC VCC = 5.5V,VIN = VCC or GND1+25o C-40μA 2, 3+125o C, -55o C-750μAOutput Current (Sink)IOL VCC = 4.5V, VIH = 4.5V,VOUT = 0.4V, VIL = 0V1+25o C7.2-mA 2, 3+125o C, -55o C 6.0-mAOutput Current (Source)IOH VCC = 4.5V, VIH = 4.5V,VOUT = VCC -0.4V,VIL = 0V1+25o C7.2-mA2, 3+125o C, -55o C 6.0-mAOutput Voltage Low VOL VCC = 4.5V, VIH = 3.15V,IOL = 50μA, VIL = 1.35V1, 2, 3+25o C, +125o C, -55o C-0.1VVCC = 5.5V, VIH = 3.85V,IOL = 50μA, VIL = 1.65V1, 2, 3+25o C, +125o C, -55o C-0.1VOutput Voltage High VOH VCC = 4.5V, VIH = 3.15V,IOH = -50μA, VIL = 1.35V 1, 2, 3+25o C, +125o C, -55o C VCC-0.1-VVCC = 5.5V, VIH = 3.85V, IOH = -50μA, VIL = 1.65V 1, 2, 3+25o C, +125o C, -55o C VCC-0.1-VInput Leakage Current IIN VCC = 5.5V, VIN = VCC orGND, VCC = 4.5V and 5.5V1+25o C-±0.5μA2, 3+125o C, -55o C-±5.0μAThree-State Output Leakage Current IOZ Applied Voltage = 0V or VCC1+25o C-±1μA2, 3+125o C, -55o C-±50μANoise Immunity Functional Test FN VCC = 4.5V,VIH = 0.70(VCC),VIL = 0.30(VCC) (Note 2)7, 8A, 8B+25o C, +125o C, -55o C---NOTE:1.All voltages reference to device GND.2.For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.TABLE 2.AC ELECTRICAL PERFORMANCE CHARACTERISTICSPARAMETER SYMBOL (NOTES 1, 2)CONDITIONSGROUPA SUB-GROUPS TEMPERATURELIMITSUNITSMIN MAXPropagation Delay Data to Output TPLHTPHLVCC = 4.5V9+25o C219ns10, 11+125o C, -55o C223nsEnable to Output TPZLTPZH VCC = 4.5V9+25o C226ns10, 11+125o C, -55o C230nsDisable to Output TPLZTPHZ VCC = 4.5V9+25o C228ns10, 11+125o C, -55o C233nsNOTES:1.All voltages referenced to device GND.2.AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.TABLE 3.ELECTRICAL PERFORMANCE CHARACTERISTICSPARAMETER SYMBOL CONDITIONS NOTES TEMPERATURELIMITSUNITS MIN MAXCapacitance Power Dissipation CPD VCC = 5.0V, f = 1MHz1+25o C Typical 45pF1+125o C, -55o C Typical 45pFInput Capacitance CIN VCC = Open, f = 1MHz1+25o C-10pF1+125o C, -55o C-10pFOutput Transition Time TTHLTTLHVCC = 4.5V1+25o C-12ns1+125o C, -55o C-18nsNOTES:1.The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directlytested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.TABLE 4.DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICSPARAMETERS SYMBOL (NOTES 1, 2)CONDITIONSTEMP-ERATURE200K RADLIMITS1M RADLIMITSUNITSMIN MAX MIN MAXQuiescent Current ICC VCC = 5.5V, VIN = VCC or GND+25o C-0.75- 3.75mA Output Current (Sink)IOL VCC = 4.5V, VIN = VCC or GND,VOUT = 0.4V+25o C 6.0- 5.0-mAOutput Current (Source)IOH VCC = 4.5V, VIN = VCC or GND,VOUT = VCC -0.4V+25o C-6.0--5.0-mAOutput Voltage Low VOL VCC = 4.5V and 5.5V,VIH = 0.70(VCC),VIL = 0.30(VCC) at 200K RAD,VIL = 0.12(VCC) at 1M RAD,IOL = 50μA+25o C-0.1-0.1VOutput Voltage High VOH VCC = 4.5V and 5.5V,VIH = 0.70(VCC),VIL = 0.30(VCC) at 200K RAD,VIL = 0.12(VCC) at 1M RAD,IOH = -50μA +25o C VCC-0.1-VCC-0.1-VInput Leakage Current IIN VCC = 5.5V, VIN = VCC or GND+25o C-±5-±5μA Three-State OutputLeakage CurrentIOZ Applied Voltage = 0V or VCC+25o C-±50-±100μANoise Immunity Functional Test FNVCC = 4.5V, VIH = 0.70(VCC),VIL = 0.30(VCC) at 200K RAD,VIL = 0.12(VCC) at 1M RAD (Note 3)+25o C-----Propagation Delay Data to Output TPLH TPHL VCC = 4.5V +25o C 223228ns Enable to Output TPZL TPZH VCC = 4.5V +25o C 230236ns Enable to Output TPLZ TPHZVCC = 4.5V+25o C233233nsNOTES:1.All voltages referenced to device GND.2.AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.3.For functional tests, VO ≥4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.TABLE 5.BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25o C)PARAMETER GROUP B SUBGROUPDELTA LIMITICC 512μA IOL/IOH 5-15% of 0 HourIOZL/IOZH5±200nATABLE 6.APPLICABLE SUBGROUPSCONFORMANCE GROUPSMETHOD GROUP A SUBGROUPSREAD AND RECORD Initial Test (Preburn-In)100%/50041, 7, 9ICC, IOL/H Interim Test I (Postburn-In)100%/50041, 7, 9ICC, IOL/H Interim Test II (Postburn-In)100%/50041, 7, 9ICC, IOL/HPDA100%/50041, 7, 9, DeltasInterim Test III (Postburn-In)100%/50041, 7, 9ICC, IOL/HPDA 100%/50041, 7, 9, Deltas Final Test 100%/50042, 3, 8A, 8B, 10, 11Group A (Note 1)Sample/50051, 2, 3, 7, 8A, 8B, 9, 10, 11Group BSubgroup B-5Sample/50051, 2, 3, 7, 8A, 8B, 9, 10, 11, DeltasSubgroups 1, 2, 3, 9, 10, 11Subgroup B-6Sample/50051, 7, 9Group D Sample/50051, 2, 3, 7, 8A, 8B, 9, 10, 11NOTE:1.Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised.TABLE 7.TOTAL DOSE IRRADIATIONCONFORMANCEGROUPS METHOD TESTREAD AND RECORD PRE RAD POST RAD PRE RAD POST RAD Group E Subgroup 250051, 7, 9Table 41, 9Table 4 (Note 1)NOTE:1.Except FN test which will be performed 100% Go/No-Go.TABLE 4.DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)PARAMETERS SYMBOL (NOTES 1, 2)CONDITIONSTEMP-ERATURE 200K RAD LIMITS 1M RAD LIMITS UNITS MIN MAX MINMAXAC Timing DiagramsAC Load CircuitTABLE 8.STATIC BURN-IN AND DYNAMIC BURN-IN TEST CONNECTIONSOPENGROUND1/2 VCC = 3V ± 0.5VVCC = 6V ± 0.5VOSCILLATOR50kHz25kHzSTATIC BURN-IN I TEST CONNECTIONS (Note 1)2 - 91, 10 - 19-20--STATIC BURN-IN II TEST CONNECTIONS (Note 1)-10- 1 - 9, 11 - 20--DYNAMIC BURN-IN TEST CONNECTIONS (Note 2)-1011 - 181, 202 - 919NOTES:1.Each pin except VCC and GND will have a resistor of 10K Ω ± 5% for static burn-in.2.Each pin except VCC and GND will have a resistor of 680Ω ± 5% for dynamic burn-in.TABLE 9. IRRADIATION TEST CONNECTIONSOPEN GROUNDVCC = 5V ± 0.5V -101 - 9, 11 - 20NOTE:Each pin except VCC and GND will have a resistor of 47K Ω ± 5% for irradiation testing. Group E, Sub-group 2, sample size is 4 dice/wafer 0 failures.AC VOLTAGE LEVELSPARAMETER HCS UNITS VCC 4.50V VIH 4.50V VS 2.25V VIL 0V GNDVVIHVILVOLDUTTEST CLRLPOINTCL = 50pF RL = 500ΩThree-State Low Timing DiagramsThree-State High Timing DiagramsThree-State Low Load CircuitThree-State High Load CircuitTRI-STATE LOW VOLTAGE LEVELSPARAMETER HCS UNITS VCC 4.50V VIH 4.50V VS 2.25V VT 2.25V VW 0.90V GNDVTRI-STATE HIGH VOLTAGE LEVELSPARAMETER HCS UNITS VCC 4.50V VIH 4.50V VS 2.25V VT 2.25V VW 3.60V GNDVVIHVILVOZVOLVIHVILVOZDUTTEST CLRLPOINT CL = 50pF RL = 500ΩVCCDUTTEST RLPOINTCL = 50pF RL = 500ΩDie CharacteristicsDIE DIMENSIONS:124 x 110 milsMETALLIZATION:Type: AlSiMetal Thickness: 11k Å ± 1k ÅGLASSIVATION:Type: SiO 2Thickness: 13k Å ± -2.6k ÅDIE ATTACH:Material: Silver EpoxyWORST CASE CURRENT DENSITY:<2.0 x 105A/cm 2BOND PAD SIZE:100μm x 100μm 4 mils x 4 milsMetallization Mask LayoutHCS245MSDIR (1)A0 (2)A6(8)(13) B5VCC (20)NCNCNCNCOE (19)A1 (3)A2 (4)A3 (5)A4 (6)A5 (7)A7(9)GND (10)B7(11)B6(12)(14) B4(15) B3(16) B2(17) B1(18) B0© Copyright Intersil Americas LLC 1999. All Rights Reserved.All trademarks and registered trademarks are the property of their respective owners.For additional products, see /en/products.htmlIntersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as notedin the quality certifications found at /en/support/qualandreliability.htmlIntersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.For information regarding Intersil Corporation and its products, see 。

74HC245八路巴士TRANCEIVER;三态 14.修订历史表13：修订记录文档ID发布日期数据表状态更改注意文档.数取代版本 74HC_HCT245_3 20050131产品数据表 - 9397 750 14502 74HC_HCT245_CNV_2莫迪科幻阳离子： ? 本数据表的格式经过重新设计以符 合新的演示文稿和飞利浦半导体的信息标准 ?第4节“订购信息”，第6节“固定信息”和第13节“包装大纲“修改为包含DHVQFN20 包. 74HC_HCT245_CNV_2 19930930产品SPECI FI CATION 9397 750 14502 ? 74HC245 NV 2005.保留所有权利. 74HC245产品数据表 2005年1月3日至31日 13的22飞利浦半导体 74HC245; 74HCT245八 路巴士TRANCEIVER;三态 12.波形测量点在表11中给出. V OL 和V OH 是输出负载时发生的典型电压输出下降.图5.输入（AN，BN） 输出（BN，AN）传播延迟和输出转换时间测量点在表11中给出. V OL 和V OH 是输出负载时发生的典型电压输出下降.图6. 3态输出 启用和禁用时间表11：测量点类型输入产量 74HC245保留所有权利.产品数据表 2005年1月3日至3月31日 13的22飞利浦半导体 74HC245; 74HCT245八路公交车三态波形测量点在表 11中给出. V OL 和V OH 是输出负载时发生的典型电压输出降.图5.输入（An，Bn）输出（Bn，An）传播延迟和输出转换时间测量点 在表11中给出. V OL 和V OH 是输出负载时发生的典型电压输出降.图6. 3状态输出使能和禁止时间表11：测量点类型输入产量 V M V M 74HC245 0.5V CC 0.5V CC 74HCT245 1.3 V 1.3 V 001aac433 t PLH t PHL VM V M 90％ 10％ V M V M Bn，输出 An，Bn输入 V 我 GND V OH V OL t TLH t THL 001aac479 t PLZ t PHZ输出残输出启用 90％ 10％输出启用 OE输入 V 我 V CC V OL V OH GND GND V M t PZL t PZH V M V M产量 LOW-到关关到LOW产量 74HC245输出频率; C L = pF中的输出负载电容; V CC =电源电压V; N =输入切换次数; Σ（C L ×V CC 2 ×f o ）=输出和.表10：动态特 性类型74HCT245 GND = 0 V;测试电路见图7.符号参数条件敏典型马克斯单元 T amb = 25°C t PHL ，t PLH传播延迟A到Bn或Bn到安见 图5 V CC = 4.5 V - 12 22 NS V CC = 5.0 V; C L = 15pF - 10 - NS t PZH ，t PZL 3状态输出使能时间OE A或OE到Bn V CC = 4.5V; 见图6 1630ns PHZ ，t PLZ 3状态输出禁用时间OE A或OE到Bn V CC = 4.5V; 见图6 - 1630ns t THL ，t TLH输出转换时间 V CC = 4.5V; 见图5 - 五 12 NS C PD功耗电容每个收发器 V I = GND至V CC - 1.5 V [1] -30 - pF的 T amb = -40°C至+85°C t PHL ，t PLH传播延迟A到Bn或Bn到 安 V CC = 4.5V; 见图5 --28 NS t PZH ，t PZL 3状态输出使能时间OE A或OE到Bn V CC = 4.5V; 见图6 --38 NS PHZ ，t PLZ 3状态输出禁 用时间OE A或OE到Bn V CC = 4.5V; 见图6 --38 NS t THL ，t TLH输出转换时间 V CC = 4.5V; 见图5 --15 NS T amb = -40°C至+125°C t PHL ，t PLH传播延迟A到Bn或Bn到安 V CC = 4.5V; 见图5 --33 NS t PZH ，t PZL 3状态输出使能时间

VCC Symbol tPLH, t PHL Parameter Maximum Propagation Delay, A to B or B to A (Figures 1 and 3) Maximum Propagation Delay , Direction or Output Enable to A or B (Figures 2 and 4) Maximum Propagation Delay , Direction or Output Enable to A or B (Figures 2 and 4) Maximum Output Transition Time, Any Output (Figures 1 and 3) Maximum Input Capacitance (Pin 1 or Pin 19) Maximum Three-State I/O Capacitance (I/O in High-Impedance State) Power Dissipation Capacitance (Per Transceiver Channel) CPD Used to determine the no-load dynamic power consumption: PD=CPDVCC2f+ICCVCC V 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 Guaranteed Limit 25 °C to -55°C 75 15 13 110 22 19 110 22 19 60 12 10 10 15 ≤85°C 95 19 16 140 28 24 140 28 24 75 15 13 10 15 ≤125°C 110 22 19 165 33 28 165 33 28 90 18 15 10 15 Unit ns

M54HC245中文资料M54/74HC245/640/643M54/74HC245/640/643October 1993HC640INVERTING,HC643INVERTING/NON INVERTINGOCTAL BUS TRANSCEIVER (3-STATE):HC245NON INVERTING B1R(Plastic Package)ORDER CODES :M54HCXXXF1R M74HCXXXM1R M74HCXXXB1R M74HCXXXC1RF1R(Ceramic Package)M1R(Micro Package)C1R (Chip Carrier)PIN CONNECTION (top view).HIGH SPEEDt PD =10ns (TYP.)at V CC =5V .LOW POWER DISSIPATIONI CC =4μA (MAX.)at T A =25oC .HIGH NOISE IMMUNITYV NIH =V INL =28%V CC (MIN.).OUTPUT DRIVE CAPABILITY 15LSTTL LOADS.SYMMETRICAL OUTPUT IMPEDANCE |I OH |=I OL =6mA (MIN).BALANCED PROPAGATION DELAYS t PLH =t PHL.WIDE OPERATING VOLTAGE RANGE V CC (OPR)=2V TO 6V .PIN AND FUNCTION COMPATIBLE WITH 54/74LS245/640/643DESCRIPTIONThe M54/74HC245,HC640and HC643utilisesilicon gate C2MOS technology to achive operating speeds equivalent to LSTTL devices.Along with the low power dissipation and high noiseimmunity of standards C 2MOS integrated circuit,it possesses the capability to drive 15LSTTL loads.These IC’s are intended for two-way asynchronous communication between data buses,and the direction of data trasmission is determined by DIR input.The enable input (G)can be used to disable the device so that the buses are effectively isolated.All input are equippe d with protection circuits against staticdischarge and transient discharge and transient excess voltage.IT IS PROHIBITED TO APPLY A SIGNAL TO A BUS TERMINAL WHEN IT IS IN OUTPUT MODE AND WHEN A BUS THERMINAL IS FLOATING (HIGH IMPEDANCE STATE),IT IS REQUESTED TO FIX THE INPUT LEVEL BY MEANS OF EXTERNAL PULL DOWN OR PULL UP RESISTOR.HC245HC640HC6431/11INPUT AND OUTPUT EQUIVALENT CIRCUITPIN DESCRIPTIONPIN No SYMBOL NAME AND FUNCTION 1DIR Directional Control 2,3,4,5,6,7,8,9A1to A8Data Inputs/Outputs 18,17,16,15,14,13,12,11B1to B8Data Inputs/Outputs19G Output Enabel Input (Active LOW)10GND Ground (0V)20V CCPositive Supply VoltageIEC LOGIC SYMBOLSTRUTH TABLEINPUT FUNCTIONOUTPUT G DIR A BUS B BUS HC245HC640HC643L L OUTPUT INPUT A =B A =B A =B L H INPUT OUTPUTB =A B =A B =A HXZZZZZX:”H”or ”L”Z:High impeda nceHC245HC640HC643M54/M74HC245/640/6432/11M54/M74HC245/640/643 LOGIC DIAGRAM(HC640)NOTE:IN CASE OF HC245OR HC643,INPUT INVERTERS MARKED*AT A BUS AND B BUS ARE ELIMINATED RESPECTIVELY ABSOLUTE MAXIMUM RATINGSymbol Parameter Value Unit V CC Supply Voltage-0.5to+7V V I DC Input Voltage-0.5to V CC+0.5V V O DC Output Voltage-0.5to V CC+0.5VI IK DC Input Diode Current±20mAI OK DC Output Diode Current±20mAI O DC Output Source Sink Current Per Output Pin±35mAI CC or I GND DC V CC or Ground Current±70mAP D Power Dissipation500(*)mW T stg Storage Temperature-65to+150o C T L Lead Temperature(10sec)300o C Absolute Maximum Ratings are those values beyond whichdamage to the device may occu r.Functiona l ope ration und er these cond ition isnotimplied. (*)500mW:?65o C derate to300mW by10mW/o C:65o C to85o C3/11RECOMMENDED OPERATING CONDITIONSSymbol Parameter Value Unit V CC Supply Voltage2to6V V I Input Voltage0to V CC V V O Output Voltage0to V CC V T op Operating Temperature:M54HC SeriesM74HC Series -55to+125-40to+85o Co Ct r,t f Input Rise and Fall Time V CC=2V0to1000nsV CC=4.5V0to500V CC=6V0to400DC SPECIFICATIONSSymbol ParameterTest Conditions ValueUnit V CC(V)T A=25o C54HC and74HC-40to85o C74HC-55to125o C54HCMin.Typ.Max.Min.Max.Min.Max. V IH High Level InputVoltage 2.0 1.5 1.5 1.5V 4.5 3.15 3.15 3.156.0 4.2 4.2 4.2V IL Low Level InputVoltage 2.00.50.50.5V 4.5 1.35 1.35 1.356.0 1.8 1.8 1.8V OH High LevelOutput Voltage 2.0V I=V IHorV ILI O=-20μA1.92.0 1.9 1.9V 4.5 4.4 4.5 4.4 4.46.0 5.9 6.0 5.9 5.94.5I O=-6.0mA 4.18 4.31 4.13 4.106.0I O=-7.8mA 5.68 5.8 5.63 5.60V OL Low Level OutputVoltage 2.0V I=V IHorV ILI O=20μA0.00.10.10.1V 4.50.00.10.10.16.00.00.10.10.14.5I O=6.0mA0.170.260.330.406.0I O=7.8mA0.180.260.330.40I I Input LeakageCurrent 6.0V I=V CC or GND±0.1±1±1μAI OZ3State OutputOff State Current 6.0V I=V IH or V ILV O=V CC or GND±0.5±5.0μAI CC Quiescent SupplyCurrent 6.0V I=V CC or GND44080μAM54/M74HC245/640/643 4/11AC ELECTRICAL CHARACTERISTICS(C L=50pF,Input t r=t f=6ns)Symbol ParameterTest Conditions ValueUnit V CC(V)C L(pF)T A=25o C54HC and74HC-40to85o C74HC-55to125o C54HCMin.Typ.Max.Min.Max.Min.Max. t TLH t THL Output Transition Time2.05025607590ns4.571219186.06101315t PLH t PHL Propagation Delay Time2.0503390115135ns4.5121823276.0101520232.015048120150180ns4.5162430366.014202631t PZL t PZH Output Enable Time2.050R L=1K?48150190225ns4.5163038456.0142632382.0150R L=1K?63180225270ns4.5213645546.018313846t PLZ t PHZ Output DisableTime2.050R L=1K?37150190225ns4.5173038456.015263238C IN Input Capacitance DIR,G5101010pFC I/OUT OutputCapacitance An,Bn13pFC PD(*)Power DissipationCapacitanceHC245HC640/6433937pF(*)C PD is defined as the value of the IC’s internal equivalent capac itanc e which is calculated from the operating current con sump tion without load. (Refer to Test Circuit).Average opertingcurrent can be obtained by the following equ ation.I CC(opr)=C PD?V CC?f IN+I CC/8(per circuit)M54/M74HC245/640/6435/11SWITCHING CHARACTERISTICS TEST WAVEFORMTEST CIRCUIT I CC(Opr.)C PD CALCULATIONC PD is to be calculated with the followingformula by using the measured value of I CC(Opr.)in the test circuit opposite.C PD=I CC(Opr.)f IN x V CCM54/M74HC245/640/643 6/11M54/M74HC245/640/643 Plastic DIP20(0.25)MECHANICAL DATAmm inchDIM.MIN.TYP.MAX.MIN.TYP.MAX.a10.2540.010B 1.39 1.650.0550.065b0.450.018b10.250.010D25.4 1.000E8.50.335e 2.540.100e322.860.900F7.10.280I 3.930.155L 3.30.130Z 1.340.053P001J7/11M54/M74HC245/640/643Ceramic DIP20MECHANICAL DATAmm inch DIM.MIN.TYP.MAX.MIN.TYP.MAX.A250.984 B7.80.307D 3.30.130E0.5 1.780.0200.070 e322.860.900F 2.29 2.790.0900.110G0.40.550.0160.022I 1.27 1.520.0500.060L0.220.310.0090.012 M0.51 1.270.0200.050 N14°(min.),15°(max.)P7.98.130.3110.320 Q 5.710.225P057H 8/11M54/M74HC245/640/643SO20MECHANICAL DATAmm inchDIM.MIN.TYP.MAX.MIN.TYP.MAX.A 2.650.104a10.100.200.0040.007a2 2.450.096b0.350.490.0130.019b10.230.320.0090.012C0.500.020c145°(typ.)D12.6013.000.4960.512E10.0010.650.3930.419e 1.270.050e311.430.450F7.407.600.2910.299L0.50 1.270.190.050M0.750.029S8°(max.)P013L9/11M54/M74HC245/640/643PLCC20MECHANICAL DATAmm inch DIM.MIN.TYP.MAX.MIN.TYP.MAX.A9.7810.030.3850.395 B8.899.040.3500.356D 4.2 4.570.1650.180d1 2.540.100d20.560.022E7.378.380.2900.330e 1.270.050e3 5.080.200F0.380.015G0.1010.004 M 1.270.050M1 1.140.045P027A 10/11M54/M74HC245/640/643 Information furnished is believed to be accurate and reliable.However,SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use.No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSONMicroelectronics.Specificationsmentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.1994SGS-THOMSON Microelectronics-All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia-Brazil-France-Germany-Hong Kong-Italy-Japan-Korea-Malaysia-Malta-Morocco-The Netherlands-Singapore-Spain-Sweden-Switzerland-Taiwan-Thailand-United Kingdom-U.S.A11/11。