AO4800B;中文规格书,Datasheet资料

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5 VDS=15V ID=6.9A
4
3
1000
800 Ciss
600
Capacitance (pF)
VGS (Volts)
IAR (A) Peak Avalanche Current
2
1
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
400 Coss
Rev 4: Dec 2011 /

Page 2 of 6
AO4800B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ID (A)
40 10V
35
30
3V 4.5V
25
2.5V
20
15
10 VGS=2V
20
25°C 10
0
2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
IS (A)
1.0E+01
1.0E+00
1.0E-01 1.0E-02
125°C
25°C
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Rev 4: Dec 2011 /

Page 3 of 6
AO4800B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
6
7
nC
Qgs
Gate Source Charge
VGS=4.5V, VDS=15V, ID=6.9A
1.3
nC
Qgd
Gate Drain Charge
1.8
nC
tD(on)
Turn-On DelayTime
3
ns
tr
Turn-On Rise Time
VGS=10V, VDS=15V, RL=2.2Ω,
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
Voltage (Note E)
0.8 0
25 50 75 100 125 150 175
Temperature (°C) 0 Figure 4: On-Resistance vs. Junction18Temperature
(Note E)
RDS(ON) (mΩ)
50 ID=6.9A
40
125°C 30
2.5
ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
25
ns
tf
Turn-Off Fall Time
4
ns
trr
Body Diode Reverse Recovery Time IF=6.9A, dI/dt=100A/µs
8.5
ns
Qrr
Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs
Top View
SOIC-8 Bottom View
Top View
S2 1
G2 2 S1 3 G1 4
8 D2
7 D2 6 D1 5 D1 G1
D1
G2 S1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VGS=4.5V, VDS=5V
30
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=6.9A VGS=4.5V, ID=6A
TJ=125°C
17.8 27
mΩ
28
40
19
32 mΩ
VGS=2.5V, ID=5A
24
50 mΩ
gFS
Forward Transconductance
200
0
Crss
0
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
TA=25°C
10.0
TA=150°C
TA=100°C
TA=125°C
1.0
1
10
100
1000
Time in avalanche, tA (µs)
Figure 9: Single Pulse Avalanche capability (Note C)
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
AO4800B
30V Dual N-Channel MOSFET
General Description
The AO4800B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.
Normalized On-Resistance
RDS(ON) (mΩ)
30
25
VGS=4.5V
20
15
VGS=10Vຫໍສະໝຸດ 1.8VGS=4.5V1.6
ID=6A
1.4
17
5
1.2
VIDG=S6=.91A01V02
1
10
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
ID (Amps)
100.0
10.0 1.0
5
0
0
1
2
3
4
5
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
ID(A)
15
VDS=5V 12
9
6
3
125°C
25°C
0
0
0.5
1
1.5
2
2.5
3
VGS(Volts) Figure 2: Transfer Characteristics (Note E)