MIL-PRF-19500/116L8 June 2001
SUPERSEDING
MIL-PRF-19500/116K
28 February 1997
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING
TYPES 1N914, 1N914UR, 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UB2R, 1N4148UBCA,
1N4148UBCC, 1N4148UBCD, 1N4531, AND 1N4531UR, JAN, JANTX, JANTXV, JANHC, AND JANKCJANS1N4148-1 (see 6.4). Device types 1N914
and 1N4531 are inactive for new design.
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon, diffused, switching diodes. Three
levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product
assurance are provided for each unencapsulated device.
1.2 Physical dimensions. See figures 1 (similar to DO-35), 2, 3, 4, and 5.
P.O. BOX 609 • ROCKPORT, MAINE 04856 • 207-236-6076 • FAX 207-236-9558 GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5139 - 1N5148 1N5139A - 1N5148A PART CAPACITANCE @ 4 Vdc CAPACITANCE RATIO MIN QUALITY FACTOR NUMBER pF C•4V / C•60V Q @ 4 Vdc MIN NOM MAX MIN f = 50 MHz 1N5139 6.12 6.8 7.48 2.7 350 ♦ 1N5139A 6.46 6.8 7.14 2.7 350 1N5140 9.0 10.0 11.0 2.8 300 ♦ 1N5140A 9.5 10.0 10.5 2.8 300 1N5141 10.8 12.0 13.2 2.8 300 ♦ 1N5141A 11.4 12.0 12.6 2.8 300 1N5142 13.5 15.0 16.5 2.8 250 ♦ 1N5142A 14.3 15.0 15.7 2.8 250 1N5143 16.2 18.0 19.8 2.8 250 ♦ 1N5143A 17.1 18.0 18.9 2.8 250 1N5144 19.8 22.0 24.2 3.2 200 ♦ 1N5144A 20.9 22.0 23.1 3.2 200 1N5145 24.3 27.0 29.7 3.2 200 ♦ 1N5145A 25.7 27.0 28.3 3.2 200 1N5146 29.7 33.0 36.3 3.2 200 ♦ 1N5146A 31.4 33.0 34.6 3.2 200 1N5147 36.1 39.0 42.9 3.2 200 ♦ 1N5147A 37.1 39.0 40.9 3.2 200 1N5148 42.3 47.0 51.7 3.2 200 ♦ 1N5148A 44.7 47.0 49.3 3.2 200 Package Style DO-7 DC Power Dissipation (Pd) 400 mW Forward Current (If) 250 mA Min Reverse Breakdown Voltage (Bvr) @ Ir = 10 µAdc 65 Vdc Max Reverse Current (IR) @ Vr = 55 Vdc 20 nAdc Max Reverse Current (IR2) @ Vr = 55 Vdc; Ta = 150°C 20 µAdc Temp Coefficient of Capacitance @ Vr=4 Vdc; Ta -40 to +85°C .03%/°C Operating Temperature Range (Topr) -65 to + 175°C Storage Temperature Range (Tstg) -65 to + 200°C Voltage Tolerance: Standard Device ±10% Suffix A ± 5% ♦ DENOTES MILITARY APPROVAL FOR JAN - JANTX - JANTXV 元器件交易网
211N5820/1N5821/1N5822
- 55 --- +150 1N58201N5821303.00.500802.020151N5822204014282500.4750.525 IF = 3.0ASIYUR1.0(25.4) MIN.375(9.5).335(8.5)1.0(25.4) MIN.220(5.6).197(5.0)DIADIA.052(1.3).048(1.2)DO-27Unit：inch（mm）VR(RMS)·正向压降低。Low Forward Voltage Drop
最大正向平均整流电流 最大峰值反向电压最大反向有效值电压VRRMIFM·大电流承受能力。High Current Capability塑封肖特基二极管
最大正向电压降VF正向峰值浪涌电流 8.3mS单一正弦半波IFSM最大反向漏电流IR典型热阻工作温度和存储温度RθJATj, TSTG典型结电容 VR = 4.0V, f = 1.0MHzCj TA = 25℃ TA = 100℃·高温焊接保证 High temperature soldering guaranteed:260℃/10 秒, 0.375" (9.5mm)引线长度。260℃/10 seconds, 0.375" (9.5mm) lead length,·引线可承受5 磅 (2.3kg) 拉力。 5 lbs. (2.3kg) tension机械数据 Mechanical Data·端子: 镀锡轴向引线 Terminals: Plated axial leads·极性: 色环端为负极 Polarity: Color band denotes cathode end·安装位置: 任意 Mounting Position: Any特征 Features PLASTIC SCHOTTKYBARRIER RECTIFIER
Maximum repetitive peak reverse voltageMaximum RMS voltage最大直流阻断电压Maximum DC blocking voltageMaximum average forward rectified currentMaximum forward voltagePeak forward surge current 8.3 ms single half sine-wave Maximum reverse currentTypical thermal resistanceOperating junction and storage temperature rangeType junction capacitance极限值和电参数 TA = 25℃ 除非另有规定。Maximum Ratings & Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified.符号SymbolsVDCVV
1/51N582x
July2003-Ed:3ALOW DROP POWER SCHOTTKY RECTIFIER®
AxialPowerSchottkyrectifiersuitedforSwitchModePowerSuppliesandhighfrequencyDCtoDCconverters.PackagedinDO-201ADthesedevicesareintendedforuseinlowvoltage,highfrequencyinverters,freewheeling,polarityprotectionandsmallbatterychargers.DESCRIPTIONnVERYSMALLCONDUCTIONLOSSESnNEGLIGIBLESWITCHINGLOSSESnEXTREMELYFASTSWITCHINGnLOWFORWARDVOLTAGEDROPnAVALANCHECAPABILITYSPECIFIEDFEATURESANDBENEFITS
SymbolParameterValueUnit1N58201N58211N5822VRRMRepetitivepeakreversevoltage203040VIF(RMS)RMSforwardcurrent10AIF(AV)AverageforwardcurrentTL=100°Cδ=0.53ATL=110°Cδ=0.533AIFSMSurgenonrepetitiveforwardcurrenttp=10msSinusoidal80APARMRepetitivepeakavalanchepowertp=1µsTj=25°C1700WTstgStoragetemperaturerange-65to+150°CTjMaximumoperatingjunctiontemperature*150°CdV/dtCriticalrateofriseofreversevoltage10000V/µsABSOLUTERATINGS(limitingvalues)IF(AV)3AVRRM40VTj150°CVF(max)0.475VMAINPRODUCTSCHARACTERISTICS
