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Q67040-S4138-A2中文资料

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SIPMOS ® Power Transistor• N channel• Enhancement mode• Avalanche-rated• d v/d t rated• 175°C operating temperatureType V DS I D R DS(on)Package Ordering Code SPD23N0555 V22 A0.06 ΩP-TO252Q67040 - S4138 - A2 SPU23N0555 V22 A0.06 ΩP-TO251Q67040 - S4131 - A2Maximum RatingsParameter Symbol Values UnitContinuous drain current T C = 25 °CT C = 100 °C I D1622APulsed drain current T C = 25 °C I Dpuls88Avalanche energy, single pulseI D = 22 A, V DD = 25 V, R GS = 25 ΩL = 372 µH, T j = 25 °C E AS90mJAvalanche current,limited by T jmax I AR 22A Avalanche energy,periodic limited by T jmax E AR 5.5mJReverse diode d v/d tI S = 22 A, V DS = 40 V, d i F/d t = 200 A/µs T jmax = 175 °C d v/d t6kV/µsGate source voltage V GS± 20VPower dissipation T C = 25 °C P tot55WMaximum RatingsParameter Symbol Values Unit Operating temperature T j -55 ... + 175°C Storage temperature T stg -55 ... + 175 Thermal resistance, junction - case R thJC ≤ 2.7K/W Thermal resistance, junction - ambient (PCB mount)**R thJA≤ 50Thermal resistance, junction - ambient R thJA≤ 100IEC climatic category, DIN IEC 68-1 55 / 175 / 56** when mounted on 1 " square PCB ( FR4 );for recommended footprintElectrical Characteristics, at T j = 25°C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max.Static CharacteristicsDrain- source breakdown voltageV GS = 0 V, I D = 0.25 mA, T j = 25 °C V(BR)DSS55--VGate threshold voltage V GS=V DS, I D = 40 µA V GS(th)2.1 3 4Zero gate voltage drain currentV DS = 50 V, V GS = 0 V, T j = -40 °C V DS = 50 V, V GS = 0 V, T j = 25 °C V DS = 50 V, V GS = 0 V, T j = 150 °C I DSS----0.1-10010.1µAGate-source leakage current V GS = 20 V, V DS = 0 V I GSS- 10 100nADrain-Source on-resistance V GS = 10 V, I D = 16 A R DS(on)- 0.04 0.06ΩElectrical Characteristics, at T j = 25°C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max.Dynamic CharacteristicsTransconductanceV DS≥ 2 *I D * R DS(on)max, I D = 16 A g fs7 10-SInput capacitanceV GS = 0 V, V DS = 25 V, f = 1 MHz C iss- 490 615pFOutput capacitanceV GS = 0 V, V DS = 25 V, f = 1 MHz C oss- 170 215Reverse transfer capacitanceV GS = 0 V, V DS = 25 V, f = 1 MHz C rss- 95 120Turn-on delay timeV DD = 30 V, V GS = 10 V, I D = 22 A R G = 20 Ωt d(on)- 15 25nsRise timeV DD = 30 V, V GS = 10 V, I D = 22 A R G = 20 Ωt r- 25 40Turn-off delay timeV DD = 30 V, V GS = 10 V, I D = 22 A R G = 20 Ωt d(off)- 30 45Fall timeV DD = 30 V, V GS = 10 V, I D = 22 A R G = 20 Ωt f- 25 40Gate charge at thresholdV DD = 40 V, I D = 0.1 A, V GS =0 to 1 V Q g(th)- 0.5 0.75nCGate charge at 7.0 VV DD = 40 V, I D = 22 A, V GS =0 to 7 V Q g(7)- 13 20Gate charge totalV DD = 40 V, I D = 22 A, V GS =0 to 10 V Q g(total)- 17 26Gate plateau voltage V DD = 40 V, I D = 22 A V(plateau)- 5.9-VElectrical Characteristics, at T j = 25°C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max.Reverse DiodeInverse diode continuous forward current T C = 25 °C I S-- 22AInverse diode direct current,pulsed T C = 25 °C I SM-- 88Inverse diode forward voltage V GS = 0 V, I F = 44 A V SD- 1.2 1.8VReverse recovery timeV R = 30 V, I F=l S, d i F/d t = 100 A/µs t rr- 55 85nsReverse recovery chargeV R = 30 V, I F=l S, d i F/d t = 100 A/µs Q rr- 0.12 0.18µCPower dissipation P tot = ƒ(T C )20406080100120140°C180T C0 5 10 15 20 25 30 35 40 45 50W 60 P totDrain current I D = ƒ(T C )parameter: V GS ≥ 10 V20406080100120140°C 180T C0 24 6 8 10 12 14 16 18 20A 24 I DSafe operating area I D = ƒ(V DS )parameter: D = 0.01, T C = 25°C10 110 210 310 AI D100 10110 2V VDSRD S (o n ) = V D S / IDDC 10 ms1 ms100 µst p = 26.0µsTransient thermal impedance Z th JC = ƒ(t p )parameter: D = t p /T10 10 10 10 10 10 Z thJC10101010101010 10s t pTyp. output characteristics I D = ƒ(V DS )parameter: t p = 80 µs , T j = 25 °C0.00.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0V 5.0V DSI DTyp. drain-source on-resistance R DS (on) = ƒ(I D )parameter: t p = 80 µs, T j = 25 °C5101520253035A45I DR DS (on)Typ. transfer characteristics I D = f (V GS )parameter: t p = 80 µs V DS ≥2 x I D x R DS(on)max12345678V10VGS0 5 10 15 20 25 30 35 40 45 50A 60 I DDrain-source on-resistance R DS (on) = ƒ(T j )parameter: I D = 16 A, V GS = 10 V-60-202060100°C 180T j0.00 0.02 0.04 0.06 0.08 0.100.12 0.14 0.16Ω0.19R DS (on)typ98%Gate threshold voltageV GS(th)= f (T j )parameter:V GS =V DS , I D =40µA-60-202060100140V200T j0.0 0.40.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4V 5.0 VGS(th)min typ maxTyp. capacitancesC= f (V DS )parameter:V GS = 0V, f = 1MHz51015202530V40110 210 310 410 pFCCissCossCrssForward characteristics of reverse diode I F = ƒ(V SD )parameter: T j , t p = 80 µs10 10 10 10 I F0.00.40.8 1.2 1.6 2.0 2.4V 3.0Typ. gate charge V GS = ƒ(Q Gate )parameter: I D puls = 22 A481216nC24Q Gate2 4681012V16V GSDS maxV 0,8 DS maxV 0,2 Avalanche energy E AS = f (T j )parameter:I D =22A,V DD =25 V R GS =25 Ω , L = 372µH20406080100120140°C180T j0 10 20 3040 50 60 70 80 mJ100 EASDrain-source breakdown voltage V (BR)DSS = ƒ(T j )-60-202060100°C18049 51 5355575961V65V (BR)DSS。

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AOD413A 40V P-Channel MOSFET 数据手册说明书

AOD413A 40V P-Channel MOSFET 数据手册说明书

Symbol V DS V GSI DM I AR E AR SymbolTyp Max 16.7254050R θJC23Continuous Drain B,HUnits Parameter T C =25°C T C =100°CAbsolute Maximum Ratings T A =25°C unless otherwise noted V T A =70°C Power Dissipation B Avalanche CurrentC Repetitive avalanche energy L=0.1mH C ID Pulsed Drain Current CVGate-Source Voltage Drain-Source Voltage Steady-StateT A =25°C P DSM T C =25°C Maximum Junction-to-Ambient A,G Steady-State Power Dissipation AP D T C =100°C °C/WThermal CharacteristicsParameterUnits Maximum Junction-to-Ambient A,Gt ≤ 10sR θJA °C/W °C/W Maximum Junction-to-CaseFGS DGSDSymbolMin TypMaxUnits BV DSS -40V -1T J =55°C-5I GSS ±100nA V GS(th)-1.7-2-3V I D(ON)-30A3644T J =125°C52655266g FS 22S V SD -0.76-1V I S-12A C iss 9001125pF C oss 97pF C rss 68pF R g14ΩQ g (-10V)16.221nC Q g (-4.5V)7.29.4nC Q gs 3.8nC Q gd 3.5nC t D(on) 6.2ns t r 8.4ns t D(off)44.8ns t f 41.2ns t rr 21.2ns Q rr13.8nC -20COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.20Gate Source Charge Gate resistanceV GS =0V, V DS =0V, f=1MHzV GS = -10V, V DS = -20V,I D = -12ATotal Gate Charge m ΩTurn-On Rise Time Turn-Off DelayTime V GS = -10V, V DS = -20V, R L =1.6Ω,R GEN =3ΩTurn-Off Fall TimeTurn-On DelayTime Gate Drain Charge V GS =0V, V DS = -20V, f=1MHz SWITCHING PARAMETERS Total Gate Charge V GS = -4.5V, I D = -8AI S = -1A,V GS =0VV DS = -5V, I D = -12A Maximum Body-Diode Continuous CurrentInput Capacitance Output CapacitanceDYNAMIC PARAMETERS R DS(ON)Static Drain-Source On-ResistanceForward Transconductance Diode Forward VoltageElectrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS ParameterConditions I DSS µA Body Diode Reverse Recovery Charge I F = -12A, dI/dt=100A/µsBody Diode Reverse Recovery TimeV GS = -10V, I D = -12AReverse Transfer Capacitance I F = -12A, dI/dt=100A/µsGate Threshold Voltage V DS =V GS I D = -250µA Drain-Source Breakdown Voltage On state drain currentI D = -250µA, V GS =0V V GS = -10V, V DS = -5V V DS = -40V, V GS =0VV DS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating I DSM are based on T J(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuminga maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse ratin g.G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.H. The maximum current rating is limited by bond-wires.*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).Rev4: April 2011VdsChargeGate Charge Test Circuit & WaveformVddVdsIdVgsUnclamped Inductive Switching (UIS) Test Circuit & Waveforms2E = 1/2 LI AR ARBV DSSI ARVdd VddResistive Switching Test Circuit & Waveforms90%10%。

紧固件国家标准手册

紧固件国家标准手册

紧固件国家标准手册丝规格M2 M2.5 M3 M4 M5标准扭力 1.6～2 3～4 6～7.5 14.5～18 28～35（kgf･cm）○自攻牙螺丝螺丝规格 1.7 2 2.3 2.6 3 3.5标准扭力 1.5 3 3 3 4 4Min. Max. Min. Max. ! [ X" m. r9 X2 }; k: V1 M1.0 0.15 0.20 0.08 0.102 M1.1 0.22 0.29 0.11 0.14 / Y; W) D2 P4 s+ ^9 E3 M1.2 0.32 0.42 0.16 0.214 M1.4 0.48 0.62 0.24 0.315 M1.6 0.70 0.91 0.35 0.46 6 E0 R8 S5 Q7 o1 M/ l6 M1.8 1.10 1.43 0.55 0.727 M2.0 1.50 1.95 0.75 0.988 M2.2 2.00 2.60 1.00 1.309 M2.5 3.20 4.16 1.60 2.0810 M3.0 5.00 6.50 2.50 3.2511 M3.5 6.50 8.45 3.25 4.23 9 `- d3 R ?) s, L+ z5 t( T12 M4.0 14.00 18.20 7.00 9.1013 M4.5 20.50 26.65 10.25 13.3314 M5.0 29.00 37.70 14.50 18.8515 M6.0 49.00 63.70 24.00 31.20第一部分基础知识第一章度量当今世界上长度计量单位主要有两种，一种为公制，计量单位为米（m）、厘米（cm）、毫米（mm）等，在欧州、我国及日本等东南亚地区使用较多，另一种为英制，计量单位主要为英寸（inch），相当于我国旧制的市寸，在美国、英国等欧美国家使用较多。

1、公制计量：（10进制）1m =100 cm=1000 mm1 cm0 1 2 3 4 5 6 7 8 9 10 mm2、英制计量：（8进制）1英寸=8英分1英寸=25.4 mm 3/8''×25.4 =9.520 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1 inch3、1/4''以下的产品用番号来表示其称呼径，如：4#，5#，6#，7#，8#，10#，12#第二章螺纹一、螺纹是一种在固体外表面或内表面的截面上，有均匀螺旋线凸起的形状。

2SA系列(PNP型)三极管全参数表

2SA系列(PNP型)三极管全参数表

CK77B
2SA1020A
TRANSYS
硅PNP三极管,功率放大，功率开关，配对管2SC2655
900m
-2
-50
-50
100M
70-240
CK77B
2SA1020P
PANASONIC
硅PNP三极管,功率放大，功率开关，配对管2SC2655
900m
-2
-50
-50
100M
40-240
CK77B
2SA1020T
140M
120-560
2SA1037K
ROHM
硅PNP三极管,一般小信号放大，配对管2SC2412K/2SC4081
200m
-100m
-50
-40
140M
120-560
2SA1038S
ROHM
硅PNP三极管,高压放大，配对管2SC2389S
300m
-50m
-120
-120
140M
180-560
3CG170C
HITACHI
硅PNP三极管,低频放大，配对管2SC458/2SC2308
300m
-100m
-55
-50
200M
100-320
3CG120B
2SA1030B
HITACHI
硅PNP三极管,低频放大，配对管2SC458/2SC2308
300m
-100m
-55
-50
200M
100-320
3CK14H
2SA1030C
900m
-1
-160
-160
15M
40-310
3CA3F
2SA1014
TOSHIBA
稳压管型号参数对照表

稳压管型号参数对照表

稳压管型号参数对照表（一）美标稳压二极管型号序号型号稳压值序号型号稳压值序号型号稳压值1 1N4727 3V0 2 1N4728 3V3 3 1N4729 3V6 4 1N4730 3V9 5 1N4731 4V3 6 1N4732 4V7 7 1N4733 5V1 8 1N4734 5V6 9 1N4735 6V2 10 1N4736 6V8 11 1N4737 7V5 12 1N4738 8V2 13 1N4739 9V1 14 1N4740 10V 15 1N4741 11V 16 1N4742 12V 17 1N4743 13V 18 1N4744 15V 19 1N4745 16V 20 1N4746 18V 21 1N4747 20V 22 1N4748 22V 23 1N4749 24V 24 1N4750 27V 25 1N4751 30V 26 1N4752 33V 27 1N4753 36V 28 1N4754 39V 29 1N4755 43V 30 1N4756 47V 31 1N4757 51V（二）有后缀字母A的稳压管型号DZ是稳压管的电器编号，是和1N4148和相近的，其实1N4148就是一个0.6V的稳压管，下面是稳压管上的编号对应的稳压值，有些小的稳压管也会在管体上直接标稳压电压，如5V6就是5.6V的稳压管。

序号型号稳压值序号型号稳压值序号型号稳压值1 1N4728A 3.3 2 1N4729A 3.6 3 1N4730A 3.9 4 1N4731A 4.3 5 1N4732A 4.7 6 1N4733A 5.1 7 1N4734A 5.6 8 1N4735A 6.2 9 1N4736A 6.8 10 1N4737A 7.5 11 1N4738A 8.2 12 1N4739A 9.1 13 1N4740A 10 14 1N4741A 11 15 1N4742A 12 16 1N4743A 13 17 1N4744A 15 18 1N4745A 16 19 1N4746A 18 20 1N4747A 20 21 1N4748A 22 22 1N4749A 24 23 1N4750A 27 24 1N4751A 30 25 1N4752A 33 26 1N4753A 36 27 1N4754A 39 28 1N4755A 43 29 1N4756A 47 30 1N4757A 51 31 1N4758A 56 32 1N4759A 62 33 1N4760A 68 34 1N4761A 75（三）摩托罗拉IN47系列1W稳压管序号型号稳压值序号型号稳压值序号型号稳压值1 IN4728 3.3v2 IN4729 3.6v3 IN4730 3.9v4 IN4731 4.3v5 IN4732 4.7v6 IN4733 5.1v7 IN4734 5.6v 8 IN4735 6.2v 9 IN4736 6.8v10 IN4737 7.5v 11 IN4738 8.2v 12 IN4739 9.1v13 IN4740 10v 14 IN4741 11v 15 IN4742 12v16 IN4743 13v 17 IN4744 15v 18 IN4745 16v19 IN4746 18v 20 IN4747 20v 21 IN4748 22v序号型号稳压值序号型号稳压值序号型号稳压值22 IN4749 24v 23 IN4750 27v 24 IN4751 30v 25 IN4752 33v 26 IN4753 34v 27 IN4754 35v 28 IN4755 36v 29 IN4756 47v 30 IN4757 51v （四）摩托罗拉IN52系列0.5w精密稳压管序号型号稳压值序号型号稳压值序号型号稳压值1 IN5226 3.3v 2 IN5227 3.6v 3 IN5228 3.9v 4 IN5229 4.3v 5 IN5230 4.7v 6 IN5231 5.1v 7 IN5232 5.6v 8 IN5233 6.0v 9 IN5234 6.2v 10 IN5235 6.8v 11 IN5236 7.5v 12 IN5237 8.2v 13 IN5238 8.7v 14 IN5239 9.1v 15 IN5240 10v 16 IN5241 11v 17 IN5242 12v 18 IN5243 13v 19 IN5244 14v 20 IN5245 15v 21 IN5246 16v 22 IN5247 17v 23 IN5248 18v 24 IN5249 19v 25 IN5250 20v 26 IN5251 22v 27 IN5252 24v 28 IN5253 25v 29 IN5254 27v 30 IN5255 28v 31 IN5256 30v 32 IN5257 33vIN57系列序号型号稳压值序号型号稳压值序号型号稳压值1 IN5730 5.6v 2 IN5731 6.2v 3 IN5732 6.8v 4 IN5733 7.5v 5 IN5734 8.2v 6 IN5735 9.1v 7 IN5736 10v 8 IN5737 11v 9 IN5738 12v 10 IN5739 13v 11 IN5740 15v 12 IN5741 16v 13 IN5742 18v 14 IN5743 20v 15 IN5744 22v 16 IN5745 24v 17 IN5746 27v 18 IN5747 30v 19 IN5748 33v 20 IN5749 36v 21 IN5750 39vIN59系列序号型号稳压值序号型号稳压值序号型号稳压值1 IN5985 2.4v 2 IN5986 2.7v 3 IN5987 3v 4 IN5988 3.3v 5 IN5989 3.6v 6 IN5990 3.9v 7 IN5991 4.3v 8 IN5992 4.7v 9 IN5993 5.1v 10 IN5994 5.6v 11 IN5995 6.2v 12 IN5996 6.8v 13 IN5997 7.5v 14 IN5998 8.2v 15 IN5999 9.1v 16 IN6000 10v 17 IN6001 11v 18 IN6002 12v 19 IN6003 13v 20 IN6004 15v 21 IN6005 16v 22 IN6006 18v 23 IN6007 20v 24 IN6008 22v（五）贴片型SOD-123穏压二极管Marking Code SINLOONSMD SOD-123 Zener DiodeType /V oltage / Marking Code序号型号代码标示电压序号型号代码标示电压HZD5221B Z21 2.4V HZD5222B Z22 2.5V HZD5223B Z23 2.7V HZD5224B Z242.8V HZD5225B Z253.0V HZD5226B Z26 3.3V HZD5227B Z273.6V HZD5228B Z28 3.9V HZD5229B Z294.3V HZD5230B Z304.7V HZD5231B Z315.1V HZD5232B Z32 5.6V HZD5233B Z336.0V HZD5234B Z34 6.2V HZD5235B Z35 6.8V HZD5236B Z367.5V HZD5237B Z37 8.2V HZD5238B Z38 8.7V HZD5239B Z39 9.1V HZD5240B Z40 10V HZD5241B Z41 11V HZD5242B Z42 12V HZD5243B Z43 13V HZD5244B Z44 14V HZD5245B Z45 15V。