SS9014NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings T a =25°C unless otherwise notedElectrical Characteristics T a =25°C unless otherwise notedh FE ClassificationSymbol ParameterRatings Units V CBO Collector-Base Voltage 50V V CEO Collector-Emitter Voltage 45V V EBO Emitter-Base Voltage 5V I C Collector Current100mA P C Collector Power Dissipation 450mW T J Junction Temperature 150°C T STGStorage Temperature-55 ~ 150°CSymbol ParameterTest Condition Min.Typ.Max.Units BV CBO Collector-Base Breakdown Voltage I C =100µA, I E =050V BV CEO Collector-Emitter Breakdown Voltage I C =1mA, I B =045V BV EBO Emitter-Base Breakdown Voltage I E =100µA, I C =05V I CBO Collector Cut-off Current V CB =50V, I E =050nA I EBO Emitter Cut-off Current V EB =5V, I C =050nAh FE DC Current GainV CE =5V, I C =1mA 602801000V CE (sat)Collector-Base Saturation Voltage I C =100mA, I B =5mA 0.140.3V BE (sat)Base-Emitter Saturation Voltage I C =100mA, I B =5mA 0.84 1.0V V BE (on)Base-Emitter On Voltage V CE =5V, I C =2mA 0.580.630.7V C ob Output CapacitanceV CB =10V, I E =0f=1MHz2.23.5pF f T Current Gain Bandwidth Product V CE =5V, I C =10mA 150270MHz NFNoise FigureV CE =5V, I C =0.2mA f=1KHz, R S =2K Ω0.910dBClassificationA B C D h FE60 ~ 150100 ~ 300200 ~ 600400 ~ 10001. Emitter2. Base3. CollectorSS9014Pre-Amplifier, Low Level & Low Noise•High total power dissipation. (P T =450mW)•High h FE and good linearity •Complementary to SS9015TO-921SS9014SS9014DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.STAR*POWER is used under licenseACEx™Bottomless™CoolFET™CROSSVOLT ™DenseTrench™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™SLIENT SWITCHER ®SMART START™SPM™STAR*POWER™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET ®VCX™。
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsS9013 TRANSISTOR (NPN)FEATURESz Complementary to S9012 z Excellent h FE linearityMAXIMUM RATINGS (T a =25℃ unless otherwise noted)5 VELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditionsM inT yp Max UnitCollector-base breakdown voltage V (BR)CBOI C = 100μA , I E 0 40 VCollector-emitter breakdown voltage V (BR)CEO I C = 1mA , I B =0 25 V Emitter-base breakdown voltage V (BR)EBOI E = 100μA , I C =0 5 V Collector cut-off current I CBO V CB = 40V , I E =0 0.1 μA Collector cut-off current I CEO V CE =20V , I E =0 0.1 μA Emitter cut-off currentI EBO V EB = 5V, I C =0 0.1 μA h FE(1)V CE =1V, I C =50mA 64 400 DC current gainh FE(2)V CE =1V, I C = 500mA 40 Collector-emitter saturation voltage V CE(sat) I C = 500mA, I B = 50mA 0.6 V Base-emitter voltage V BE(sat) I C = 500mA, I B = 50mA1.2VTransition frequencyf TV CE =6V,I C =20mA,f=30MHz150 MHzCLASSIFICATION OF h FE(1)Rank D E F G H I J Range64-91 78-112 96-135 112-166 144-202 190-300 300-400TO-921. EMITTER2. BASE3. COLLECTOR【南京南山半导体有限公司 — 长电三极管选型资料】02040608010010100102550751001251500.1110100C O L L E C T O R C U R R E N T I C (m A )Static Characteristic h ——I 30300C O L L E C T O R -E M I T T E R S A T U R A T I O NV O L T A G E V C E s a t (m V )500303REVERSE VOLTAGE V (V)C A P A C I T A N C E C (p F )S9013Typical CharacterisiticsAMBIENT TEMPERATURE T a ()℃3030.3C O L L E C T O R C U R R E N T I C (m A ) 【南京南山半导体有限公司 — 长电三极管选型资料】 【南京南山半导体有限公司 — 长电三极管选型资料】Sponge strip2000 pcsSponge strip The top gasketLabel on the Inner BoxPlastic bagLabel on the Outer BoxInner Box: 333 mm ×162mm ×43mmOuter Box: 350 mm × 340mm × 250mmQA LabelSeal the box with the tapeStamp “EMPTY” on the empty boxInner Box: 240 mm ×165mm ×９５mmLabel on the Inner BoxOuter Box: 525 mm × 360mm × 262mmLabel on the Outer BoxQA LabelSeal the box with the tapeStamp “EMPTY” on the empty box。
