FDS6894AZ;中文规格书,Datasheet资料
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IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A
(Note 2)
1.3 0.6 1.2
A V
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
FDS6894AZ
October 2001
FDS6894AZ
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
1.8
1.6 VGS = 1.8V 1.4
2.0V 2.5V 3.0V 3.5V
20 1.5V 10
1.2
1
4.5V
0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V)
0.8 0 10 20 ID, DRAIN CURRENT (A) 30 40
Figure 1. On-Region Characteristics.
FDS6894AZ Rev C (W)
/
FDS6894AZ
Typical Characteristics
40 VGS = 4.5V 2.5V 1.8V ID, DRAIN CURRENT (A) 30 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.0V
(Note 1a) (Note 1)
78 40
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS6894AZ Device FDS6894AZ Reel Size 13’’ Tape width 12mm Quantity 2500 units
Figure 3. On-Resistance Variation with Temperature.
40
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
25 C
I D, DRAIN CURRENT (A) 30
o
IS, REVERSE DRAIN CURRENT (A)
Min
20
Typ
Max Units
V mV/°C 1 10 10 –10 µA µA µA
Off Characteristics
13
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance
D2 D
D2 D
DD1 D1 D
5 6
G1 S1 G
Q1
4 3 2
Q2
SO-8
Pin 1 SO-8
7 8
G2 S S2 S S
1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
©2001 Fairchild Semiconductor Corporation
FDS6894AZ Rev C (W)
/
FDS6894AZ
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.045 R DS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 8A VGS = 4.5V 1.4
TA=25 C unless otherwise noted
o
Parameter
Ratings
20 ±8
(Note 1a)
Units
V V A W
8 32 2
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
1.6 1.0 0.9 –55 to +150 °C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
0.6
0.7 –3 12 14 18 17
1.5
V mV/°C mΩ
17 20 30 26
ID(on) gFS
On–State Drain Current Forward Transconductance
16 45
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
TA = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
a) 78°C/W when 2 mounted on a 0.5in pad of 2 oz copper
b) 125°C/W when mounted on a 0.02 2 in pad of 2 oz copper
c) 135°C/W when mounted on a minimum mounting pad.
Features
• 8 A, 20 V. RDS(ON) = 17 mΩ @ VGS = 4.5 V RDS(ON) = 20 mΩ @ VGS = 2.5 V RDS(ON) = 30 mΩ @ VGS = 1.8 V
• Low gate charge (14 nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability
VDS = VGS, ID = 250 µ A ID = 250 µ A, Referenced to 25°C VGS = 4.5 V, ID = 8 A VGS = 2.5 V, ID = 7 A VGS = 1.8 V, ID = 6 A VGS = 4.5 V, ID = 8 A,TJ = 125°C VGS = 4.5V, VDS = 5 V VDS = 5 V, ID = 8 A
Figure 5. Transfer Characteristics.
(Note 2)
1.3 0.6 1.2
A V
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
FDS6894AZ
October 2001
FDS6894AZ
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
1.8
1.6 VGS = 1.8V 1.4
2.0V 2.5V 3.0V 3.5V
20 1.5V 10
1.2
1
4.5V
0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V)
0.8 0 10 20 ID, DRAIN CURRENT (A) 30 40
Figure 1. On-Region Characteristics.
FDS6894AZ Rev C (W)
/
FDS6894AZ
Typical Characteristics
40 VGS = 4.5V 2.5V 1.8V ID, DRAIN CURRENT (A) 30 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.0V
(Note 1a) (Note 1)
78 40
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS6894AZ Device FDS6894AZ Reel Size 13’’ Tape width 12mm Quantity 2500 units
Figure 3. On-Resistance Variation with Temperature.
40
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
25 C
I D, DRAIN CURRENT (A) 30
o
IS, REVERSE DRAIN CURRENT (A)
Min
20
Typ
Max Units
V mV/°C 1 10 10 –10 µA µA µA
Off Characteristics
13
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance
D2 D
D2 D
DD1 D1 D
5 6
G1 S1 G
Q1
4 3 2
Q2
SO-8
Pin 1 SO-8
7 8
G2 S S2 S S
1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
©2001 Fairchild Semiconductor Corporation
FDS6894AZ Rev C (W)
/
FDS6894AZ
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.045 R DS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 8A VGS = 4.5V 1.4
TA=25 C unless otherwise noted
o
Parameter
Ratings
20 ±8
(Note 1a)
Units
V V A W
8 32 2
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
1.6 1.0 0.9 –55 to +150 °C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
0.6
0.7 –3 12 14 18 17
1.5
V mV/°C mΩ
17 20 30 26
ID(on) gFS
On–State Drain Current Forward Transconductance
16 45
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
TA = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
a) 78°C/W when 2 mounted on a 0.5in pad of 2 oz copper
b) 125°C/W when mounted on a 0.02 2 in pad of 2 oz copper
c) 135°C/W when mounted on a minimum mounting pad.
Features
• 8 A, 20 V. RDS(ON) = 17 mΩ @ VGS = 4.5 V RDS(ON) = 20 mΩ @ VGS = 2.5 V RDS(ON) = 30 mΩ @ VGS = 1.8 V
• Low gate charge (14 nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability
VDS = VGS, ID = 250 µ A ID = 250 µ A, Referenced to 25°C VGS = 4.5 V, ID = 8 A VGS = 2.5 V, ID = 7 A VGS = 1.8 V, ID = 6 A VGS = 4.5 V, ID = 8 A,TJ = 125°C VGS = 4.5V, VDS = 5 V VDS = 5 V, ID = 8 A
Figure 5. Transfer Characteristics.
