IXGP20N120BD1;IXGP20N120B;中文规格书,Datasheet资料

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© 2003 IXYS All rights reserved G = Gate C = CollectorE = Emitter TAB = CollectorSymbol Test Conditions Maximum RatingsVCES TJ= 25°C to 150°C1200VVCGR TJ= 25°C to 150°C; RGE= 1 MΩ1200VVGESContinuous±20VVGEMTransient±30VI C25TC= 25°C40AIC110TC= 110°C20AI CM TC= 25°C, 1 ms100ASSOA VGE = 15 V, TJ= 125°C, RG= 10 Ω ICM= 40A(RBSOA)Clamped inductive load@0.8 VCESPC TC= 25°C190WTJ-55 ... +150°CTJM150°CTstg-55 ... +150°CMd Mounting torque(M3.5 screw)0.55/5Nm/lb.in.Maximum lead temperature for soldering300°C 1.6 mm (0.062 in.) from case for 10 sMaximum tab temperature260°C soldering SMD devices for 10sWeight4g Symbol Test Conditions Characteristic Values(TJ = 25°C, unless otherwise specified)min.typ.max.VGE(th)IC= 250 µA, VCE= VGE2.5 5.0VI CES VCE= VCES20N120B50µA VGE= 0 V20N120BD1150µAI GES VCE= 0 V, VGE= ±20 V±100nAVCE(sat)IC= 20A,VGE= 15 V 2.9 3.4VNote 2TJ=125°C 2.8VFeaturesz International standard packagez IGBT and anti-parallel FRED forresonant power supplies- Induction heating- Rice cookersz MOS Gate turn-on-drive simplicityz Fast Recovery Expitaxial Diode (FRED)-soft recovery with low IRMAdvantagesz Saves space (two devices in onepackage)z Easy to mount with 1 screwz Reduces assembly time and costDS99138(12/03)High Voltage IGBT with DiodeIXGP20N120BIXGP20N120BD1VCES=1200V IC25=40A VCE(sat)= 3.4Vtfi(typ)=160nsPreliminary Data SheetD1TO-220 (I XGP)C (TAB)IXYS reserves the right to change limits, test conditions, and dimensions.IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B14,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343SymbolTest ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)min.typ.max.g fs I C = 20A; V CE = 10 V,1218S Note 2.C ies 1700pF 20N120B95pF C oes V CE = 25 V, V GE = 0 V, f = 1 MHz20N120BD1105pF C res 39pF Q g 72nC Q ge I C = 20A, V GE= 15 V, V CE = 0.5 V CES12nC Q gc 27nC t d(on)25ns t ri 15ns t d(off)150280ns t fi 160320ns E off 2.1 3.5mJt d(on)25ns t ri 18ns E on 1.4mJ t d(off)270ns t fi 360ns E off 3.5mJ R thJC 0.65K/WR thCK0.25K/WReverse Diode (FRED)Characteristic Values (T J = 25°C, unless otherwise specified)Symbol Test Conditions min. typ. max.V F I F = 10 A, V GE = 0 V 3.3V I F T C = 90°C10A I RM I F = 10 A; -di F /dt = 400 A/µs,V R = 600 V 14A t rr V GE = 0 V; T J = 125°C120ns t rr I F = 1 A; -di F /dt = 100 A/µs; V R = 30 V,V GE = 0 V40ns R thJC2.5K/WInductive load, T J = 125°C I C = 20A; V GE = 15 VV CE = 0.8 V CES ; R G = R off = 10 ΩNote 1Inductive load, T J = 25°C I C = 20 A; V GE = 15 VV CE = 0.8 V CES ; R G = R off = 10 ΩNote 1.Notes: 1.Switching times may increase for V CE (Clamp) > 0.8 • V CES ,higher T J or increased R G .2.Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %© 2003 IXYS All rights reservedIXYS reserves the right to change limits, test conditions, and dimensions.IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343© 2003 IXYS All rights reserved0.00.30.60.91.2051015202530I FA t frµs Fig. 15.Peak reverse current I RMversus -di F /dtFig. 14.Reverse recovery charge Q rversus -di F /dtFig. 13.Forward current I F versus V FF /dtFig. 18Peak forward voltage V FR andt f versus di F /dt Fig. 19.Transient thermal resistance junction to caseConstants for Z thJC calculation:i R thi (K/W)t i (s)1 1.4490.005220.55780.000330.49310.0169914NOTE: Fig. 2 to Fig. 6 shows typical values分销商库存信息:IXYSIXGP20N120BD1IXGP20N120B。