DTC114EEBTL;中文规格书,Datasheet资料

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Datasheet
DTC114E series
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
l Features
1) Built-In Biasing Resistors, R 1 = R 2 = 10k W .2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external
input resistors (see inner circuit).
3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for operation, making the circuit design easy.
5) Complementary PNP Types :DTA114E series 6) Complex transistors :EMH11 /UMH11N /IMH11A l Inner circuit
/EMG9 /UMG9N/ FMG9A (NPN type )7) Lead Free/RoHS Compliant.l Application
Switching circuit, Inverter circuit, Interface circuit, Driver circuit
OUT
GND
OUT
IN
GND
DTC114EUB DTC114EE DTC114EKA SOT-346 (SC-59)
DTC114EUA
DTC114EEB OUT
IN GND
OUT
IN GND
OUT
IN
GND
OUT
IN
GND
*2 Each terminal mounted on a reference footprint
Fig.1 Input voltage vs. output current (ON characteristics) I N P U T V O L T A G E : V I (o n ) [V ]
OUTPUT CURRENT : I O [A] Fig.2 Output current vs. input voltage (OFF characteristics)
O U T P U T C U R R E N T : I O [A ]
INPUT VOLTAGE : V I(off)[V]
Fig.3 Output current vs. output voltage
O U T P U T C U R R E N T : I O [m A ]
OUTPUT VOLTAGE : V O [V] Fig.4 DC current gain vs. output current
D C C U R R
E N T G A I N : G I
OUTPUT CURRENT : I O [A]
010
20
30
40
50
5
10
Fig.5 Output voltage vs. output current
O U T P U T V O L T A G E : V O (o n ) [V ]
OUTPUT CURRENT : I O
[A]
Dimension in mm/inches
VMT3
Patterm of terminal position areas
Patterm of terminal position areas
Dimension in mm/inches
EMT3
Patterm of terminal position areas
Dimension in mm/inches
UMT3F
Patterm of terminal position areas
UMT3 Array
Patterm of terminal position areas
Dimension in mm/inches
Dimension in mm/inches
SMT3
Patterm of terminal position areas
分销商库存信息: ROHM
DTC114EEBTL。