SUM60N04-05LT中文资料

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40
15
20
80
120
ns
100
150
100
150
60 A
200
1.0
1.5
V
60
90
ns
2.1
4
A
0.065 0.18
mC
2
Document Number: 71747 S-40862—Rev. C, 03-May-04
元器件交易网
SUM60N04-05LT
Ciss
Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec
rDS(on)
VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 60 A, TJ = 125_C
VGS = 10 V, ID = 60 A, TJ = 175_C
Sense Diode Forward Voltage
VFD1 and VFD2
IF = 50 mA IF = 25 mA
1.2 TJ = 150_C
10 0.8
TJ = 25_C
0.4
0.0 −50 −25 0
25 50 75 100 125 150 175
TJ − Junction Temperature (_C)
Avalanche Current vs. Time 1000
100 IAV (A) @ TA = 150_C
Document Number: 71747 S-40862—Rev. C, 03-May-04
PCB Mountd
Symbol
RthJA RthJC
Limit
40 0.75
Unit
_C/W
1
元器件交易网
SUM60N04-05LT
Vishay Siliconix
APPLICATIONS
D Automotive D D Industrial
G 12345
T1
D1
D2
T2
G DS
T1
T2
Ordering Information: SUM60N04-05LT
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
D2PAK-5L
ID (A)
60a 20a
FEATURES
D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode
D 175_C Junction Temperature D New Low Thermal Resistance Package
12
V GS − Gate-to-Source Voltage (V)
C − Capacitance (pF)
4000
2000
Coss
Crss
0
0
8
16
24
32
40
VDS − Drain-to-Source Voltage (V)
Document Number: 71747 S-40862—Rev. C, 03-May-04
4
0.000001 0
0.25 0.5
0.75 1.0 VF (V)
1.25 1.5
Document Number: 71747 S-40862—Rev. C, 03-May-04
元器件交易网
Is ISM VSD trr IRM(REC) Qrr
Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
IDSS
VDS = 40 V, VGS = 0 V, TJ = 125_C
VDS = 40 V, VGS = 0 V, TJ = 175_C
On-State Drain Currenta
ID(on)
VDS = 5 V, VGS = 10 V
120
VGS = 10 V, ID = 60 A
Drain-Source On-State Resistancea
10
1
IAV (A) @ TA = 25_C
V(BR)DSS (V)
1
0
0.2
0.4
0.6 0.8
1.0 1.2
VSD − Source-to-Drain Voltage (V)
Drain Source Breakdown vs. Junction Temperature
55
ID = 1 mA 52
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)d
Pulsed Drain Current Continous Diode Current (Diode Conduction)d Avalanche Current Repetitive Avalanche Energyb
元器件交易网
SUM60N04-05LT
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET with Sensing Diode
PRODUCT SUMMARY
V(BR)DSS (V)
40
rDS(on) (W)
0.0045 @ VGS = 10 V 0.0065 @ VGS = 4.5 V
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TC = 25_C TC = 100_C
L = 0.1 mH TC = 25_C TA = 25_C
VDS VGS
ID
IDM IS IAR EAR
PD TJ, Tstg
Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 20 V, VGS = 10 V, ID = 25 A
VDD = 20 V, RL = 0.8 W ID ] 25 A, VGEN = 10 V, Rg = 2.5 W
655 600
Sense Diode Forward Voltage Increase
DVF
Forward Transconductancea
gfs
From IF = 25 mA to IF = 50 mA
30
VDS = 15 V, ID = 20 A
Dynamicb
Input Capacitance
On-Resistance vs. Junction Temperature
2.0
100
VGS = 10 V ID = 25 A 1.6
Source-Drain Diode Forward Voltage
I S − Source Current (A)
rDS(on) − On-Resistance (W) (Normalized)
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
250
VGS = 10 thru 6 V
5V
200
200
Transfer Characteristics
I D − Drain Current (A)
40 "20
60a 60a 250 60a 60a 180 200c 3.75d −55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambientd
Junction-to-Case
Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material).
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge