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2SK3519-01中文资料

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10 10
ID[A]
1
gfs [S]
1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 1 10
0.1
VGS[V]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
2.0 1.8 1.6 1.4
Tc [° C]
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
Typical Gate Charge Characteristics
VGS=f(Qg):ID=8A, Tch=25°C
24 22 20 Vcc= 100V 250V 400V
max.
18 16
VGS(th) [V]
4.5
VGS [V]
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=4A,VGS=10V
VGS=6.5V 2.0
7.0V
7.5V
RDS(on) [ Ω ]
8V 1.5 10V 20V
RDS(on) [ Ω ]
1.2 1.0 0.8 0.6 max. typ.
1.0
0.5
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
TO-220AB
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=500V VGS=0V VDS=400V VGS=0V VGS=±30V VDS=0V ID=4A VGS=10V ID=4A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=4A VGS=10V RGS=10 Ω V CC =250V ID=8A VGS=10V L=4.98mH Tch=25°C IF=8A VGS=0V Tch=25°C IF=8A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C 10 0.65 7 750 100 4.0 14 9 24 6 20 8.5 5.5 1.00 0.65 3.5
Min.
500 3.0
Typ.
Max.
5.0 25 250 100 0.85 1130 150 6.0 21 14 36 9 30 13 8.5 1.50
Units
V V µA nA Ω S pF
3.5
ns
nC
8
A V µs µC
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
0.4 0.2
0.0 0 5 10 15 20
0.0 -50 -25 0 25 50 75 100 125 150
ID [A]
Tch [° C]
2
元器件交易网
2SK3519-01
FUJI POWER MOSFET
7.0 6.5 6.0 5.5 5.0
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA
1
EAV [mJ]
150
tf
100
50 10
0
0 10
0
10
1
0
25
50
75
100
125
150
ID [A]
starting Tch [ ° C]
3
元器件交易网
2SK3519-01
FUJI POWER MOSFET
Transient Thermal Impedance Zth(ch-c)=f(t):D=t/T
Min.
Typ.
Max.
1.92 62.0
Units
°C/W °C/W
1
元器件交易网
2SK3519-01
Characteristics
Allowable Power Dissipation PD=f(Tc)
80 70 60
FUJI POWER MOSFET
Typical Output Characteristics
元器件交易网
2SK3519-01
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
10
1
10
0
D=0.5 0.2 0.1 0.05 0.02 0.01
Zth(ch-c) [ C/W]
o
10
-1
10
-2
t D= T t T
0
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
10
2
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C. Vcc=50V
IF=f(VSD):80µs Pulse test,Tch=25°C
1n
Ciss 10
C [F]
100p
Coss
IF [A]
1
3
10p Crss
1p 10
-1
10
0
10
1
10
2
10
0.1 0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VDS [V]
VSD [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V, VGS=10V, RG=10Ω
300
Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)<=8A
250 10
2
tr 200 td(off)
t [ns]
td(on) 10
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Symbol Ratings Unit V V DS 500 A ID ±8 A ID(puls] ±32 V VGS ±30 A IAR *2 8 mJ EAS *1 173 kV/µs dVDS/dt *4 20 dV/dt *3 5 kV/µs PD Ta=25°C 2.02 W Tc=25°C 65 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C *1 L=4.98mH, Vcc=50V *2 Tch < = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < =150°C *3 IF< *4 VDS < = 500V Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation

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2SK3523-01R中文资料

2SK3523-01R中文资料

Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton
100
10
1
0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VSD [V]
Maximum Avalanche Energy vs. starting Tch E =f(starting Tch):Vcc=50V
AS 1000
800 I =10A AS
VDS=500V VGS=0V
VDS=400V VGS=0V VGS=±30V VDS=0V ID=10.5A VGS=10V
Tch=25°C Tch=125°C
ID=10.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=10.5A
VGS=10V
RGS=10 Ω
VCC=300V ID=21A VБайду номын сангаасS=10V L=987µH Tch=25°C IF=21A VGS=0V Tch=25°C IF=21A VGS=0V -di/dt=100A/µs Tch=25°C
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt Max. power dissipation
dV/dt *3 PD Ta=25°C
Tc=25°C
5 3.125 160
2SK2850-01中文资料

2SK2850-01中文资料


Symbol VDS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg
Ratings 900 ±6 ±24 ±30 6 277 125
+150 -55 to +150
*1 L=14.1mH, Vcc=90V
Unit
V A A V A mJ W °C °C *2 Tch<=150°C
1.0 900
10
Max. Units
V
3.5 V
500
µA
1.0 mA
100
nA
2.50 Ω
S
1450
pF
210
120
30
ns
80
170
90
A
1.5 V
ns
µC
Thermalcharacteristics Item Thermal resistance
Symbol Rth(ch-c)
Rth(ch-a)
Zthch-c [K/W]
Transient thermal impedande Zthch=f(t) parameter:D=t/T
101
100 D=0.5
0.2
0.1 10-1 0.05
0
0.02 0.01
t t
D= T
T
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t [s]
4
100
150
Eas [mJ]
10-1
10-2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD [V]
100 50 0 0
2SK3541中文资料

2SK3541中文资料

2SK3541中文资料TransistorSmall switching (30V, 0.1A)2SK3541!ApplicationsInterfacing, switching (30V , 100mA)!Features1) Low on-resistance.2) Fast switching speed.3) Low voltage drive (2.5V) makes this device ideal for portable equipment.4) Easily designed drive circuits.5) Easy to parallel.!StructureSilicon N-channel MOSFET!External dimensions (Units : mm)!Absolute maximum ratings (T a=25°C)ParameterDrain-source voltage Gate-source voltage Drain current Total power dissipation (Tc =25°C)Channel temperature Storage temperatureV DSS V GSS I DR P D2Tch 30V V mA mA mW °C ±20100I D I DRP ?1mA I DP ?1Continuous Pulsed Continuous PulsedmA 400100400150150Tstg°C55~+150Symbol Limits Unit ?1 Pw ≤10μs, Duty cycle <1%2 With each pin mounted on the recommended lands.Reverse drain current!Equivalent circuitA pr otection diode is included between the gateand the source terminals to protect the diodeagainst static electricity when the product is in e a protection circuit when the fixed voltages are exceeded.Transistor!Electrical characteristics (T a=25°C)!Packaging specificationsT2R 80002SK3541TypePackageCodeBasic ordering unit (pieces)Taping !Electrical characteristic curvesD RA I N C U R R E N T : I D (A )DRAIN-SOURCE VOLTAGE : V DS (V)Fig.1 Typical output characteristicsD R A I N C U R RE N T : I D (A )GATE-SOURCE VOLTAGE : V GS (V)Fig.2 Typical transfer characteristicsG A T E T H R E S H O L D V O L T A G E : V G S (t h ) (V )CHANNEL TEMPERATURE : Tch (°C)Fig.3 Gate threshold voltage vs.channel temperatureTransistorS T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (?)DRAIN CURRENT : I D (A)Fig.4 Static drain-source on-stateresistance vs. drain current (Ι)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (?)DRAIN CURRENT : I D (A)Fig.5 Static drain-source on-stateresistance vs. drain current (ΙΙ)GATE-SOURCE VOLTAGE : V GS (V)S T A T I C D R A I N -S O U RC E O N -S T A T E R E S I S T A N C E : RD S (o n ) (?)Fig.6 Static drain-sourceon-state resistance vs. gate-source voltageCHANNEL TEMPERATURE : Tch (°C)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (?)Fig.7 Static drain-source on-stateresistance vs. channel temperatureF O R W A R D T R A N S F E R A D M I T T A N C E : |Y f s | (S ) DRAIN CURRENT : I D (A)Fig.8 Forward transferadmittance vs. drain currentR E V E R S E D R A I N C U R R E N T : I D R (A ) SOURCE-DRAIN VOLTAGE : V SD (V)Fig.9 Reverse drain current vs.source-drain voltage (Ι)R E V E R S E D R A I N C U R R E N T : I D R (A )SOURCE-DRAIN VOLTAGE : V SD (V)Fig.10 Reverse drain current vs.source-drain voltage (ΙΙ)C A P A C I T A N C E : C (p F )DRAIN-SOURCE VOLTAGE : V DS (V)Fig.11 Typical capacitance vs.drain-source voltageS W I T H I N G T I M E : t (n s )DRAIN CURRENT : I D (mA)Fig.12 Switching characteristics(See Figures 13 and 14 for the measurement circuit and resultant waveforms)Transistor!Switching characteristics measurement circuitFig.13 Switching time measurement circuitFig.14 Switching time waveformsAppendixAbout Export Control Order in JapanProducts described herein are the objects of controlledgoods in Annex 1 (Item 16) of Export Trade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.Appendix1-Rev1.0。

2SK1937-01中文资料

2SK1937-01中文资料

元器件交易网
2SK1937-01
FAP-IIA Series
> Features
- High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof
↑
7
↑
8
↑↑
9
VGS [V] IF [A]
VDS [V]
C [nF]
→ VDS [V]
Allowable Power Dissipation vs. TC
↑
பைடு நூலகம்10
↑
→ Qg [nC]
Safe operation area
↑
12
Zth(ch-c) [K/W]
→ VSD [V]
Transient Thermal impedance
tf
RGS=10 Ω
Avalanche Capability
I AV
L = 100µH Tch=25°C
Continous Reverse Drain Current
I DR
Pulsed Reverse Drain Current
I DRM
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
> Applications
- Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier