M68732L中文资料
- 格式:pdf
- 大小:25.91 KB
- 文档页数:2
SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIOM68732LMITSUBISHI RF POWER MODULE
Nov. ´971OUTLINE DRAWINGPIN:Pin: RF INPUT
VGG: GATE BIAS SUPPLY
VDD: DRAIN BIAS SUPPLY
PO: RF OUTPUT
GND: FINDimensions in mmBLOCK DIAGRAM12
34
5453
2
SymbolParameterTest conditionsLimitsMin
MaxUnitfPOηT2fOρin-Frequency rangeOutput powerTotal efficiency2nd. harmonic
Input VSWRLoad VSWR toleranceVDD=7.2V, VGG=3.5V, Pin=50mWVDD=9.2V, Pin=50mW, PO=7W (VGG adjust), ZL=20:1400430745
-25No degradation or
destroyMHzW
%dBc
--Note. Above parameters, ratings, limits and test conditions are subject to change.ELECTRICAL CHARACTERISTICS
(Tc=25°C, ZG
=ZL=50Ω unless otherwise noted)SymbolParameterConditionsRatingsUnitABSOLUTE MAXIMUM RATINGS (Tc=25°
C unless otherwise noted)
Note. Above parameters are guaranteed independently.V
9.2VDDSupply voltageV4VGGGate bias voltagemW
70
PinInput powerW10PO Output power°C-30 to +100TC (OP)Operation case temperature°C-40 to +110TstgStorage temperatureVGG≤3.5V, ZG=ZL=50Ωf=400-430MHz, ZG=ZL=50Ωf=400-430MHz, ZG=ZL=50Ωf=400-430MHz, ZG=ZL=50ΩStability413.7±118.8±123.9±1元器件交易网www.cecb2b.comSILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIOM68732LMITSUBISHI RF POWER MODULE
Nov. ´97OUTPUT POWER, TOTAL EFFICIENCYVS. SUPPLY VOLTAGESUPPLY VOLTAGE VDD (V)90604020357950301486420OUTPUT POWER, TOTAL EFFICIENCYVS. GATE VOLTAGEGATE VOLTAGE VGG (V)1008040000.51.52.53.54ηT;400MHz6020108
6420OUTPUT POWER, TOTAL EFFICIENCYVS. INPUT POWERINPUT POWER Pin (dBm)9070300-10-5051020VGG=3.5V, VDD=7.2V5010986420TYPICAL PERFORMANCE DATAOUTPUT POWER, INPUT VSWR,TOTAL EFFICIENCY VS. FREQUENCYFREQUENCY f (MHz)75654525390400410420430440VGG=3.5V, VDD=7.2V, Pin=17dBm55351086420元器件交易网www.cecb2b.com