M68732L中文资料

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SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIOM68732LMITSUBISHI RF POWER MODULE

Nov. ´971OUTLINE DRAWINGPIN:Pin: RF INPUT

VGG: GATE BIAS SUPPLY

VDD: DRAIN BIAS SUPPLY

PO: RF OUTPUT

GND: FINDimensions in mmBLOCK DIAGRAM12

34

5453

2

SymbolParameterTest conditionsLimitsMin

MaxUnitfPOηT2fOρin-Frequency rangeOutput powerTotal efficiency2nd. harmonic

Input VSWRLoad VSWR toleranceVDD=7.2V, VGG=3.5V, Pin=50mWVDD=9.2V, Pin=50mW, PO=7W (VGG adjust), ZL=20:1400430745

-25No degradation or

destroyMHzW

%dBc

--Note. Above parameters, ratings, limits and test conditions are subject to change.ELECTRICAL CHARACTERISTICS

(Tc=25°C, ZG

=ZL=50Ω unless otherwise noted)SymbolParameterConditionsRatingsUnitABSOLUTE MAXIMUM RATINGS (Tc=25°

C unless otherwise noted)

Note. Above parameters are guaranteed independently.V

9.2VDDSupply voltageV4VGGGate bias voltagemW

70

PinInput powerW10PO Output power°C-30 to +100TC (OP)Operation case temperature°C-40 to +110TstgStorage temperatureVGG≤3.5V, ZG=ZL=50Ωf=400-430MHz, ZG=ZL=50Ωf=400-430MHz, ZG=ZL=50Ωf=400-430MHz, ZG=ZL=50ΩStability413.7±118.8±123.9±1元器件交易网www.cecb2b.comSILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIOM68732LMITSUBISHI RF POWER MODULE

Nov. ´97OUTPUT POWER, TOTAL EFFICIENCYVS. SUPPLY VOLTAGESUPPLY VOLTAGE VDD (V)90604020357950301486420OUTPUT POWER, TOTAL EFFICIENCYVS. GATE VOLTAGEGATE VOLTAGE VGG (V)1008040000.51.52.53.54ηT;400MHz6020108

6420OUTPUT POWER, TOTAL EFFICIENCYVS. INPUT POWERINPUT POWER Pin (dBm)9070300-10-5051020VGG=3.5V, VDD=7.2V5010986420TYPICAL PERFORMANCE DATAOUTPUT POWER, INPUT VSWR,TOTAL EFFICIENCY VS. FREQUENCYFREQUENCY f (MHz)75654525390400410420430440VGG=3.5V, VDD=7.2V, Pin=17dBm55351086420元器件交易网www.cecb2b.com