T835H-6G-TR;T850H-6T;T835H-6I;T835H-6T;T850H-6I;中文规格书,Datasheet资料

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September 2011Doc ID 13564 Rev 21/10T835H, T850HHigh temperature 8 A Snubberless™ TriacsFeatures■Medium current Triac■150 °C max. T j turn-off commutation ■Low thermal resistance with clip bonding ■Very high 3 quadrant commutation capability ■Packages are RoHS (2002/95/EC) compliant ■UL certified (ref. file E81734)ApplicationsEspecially designed to operate in high power density or universal motor applications such as vacuum cleaner and washing machine drum motor, these 8 A Triacs provide a very highswitching capability up to junction temperatures of 150 °C.The heatsink can be reduced, compared to traditional T riac, according to the highperformance at given junction temperatures.DescriptionAvailable in through-hole or surface mount packages, the T835H and T850H Triacs series are suitable for general purpose mains power ac switching.By using an internal ceramic pad, the T8xxH-6I provides voltage insulation (rated at 2500 V rms).TM : Snubberless is a trademark of STMicroelectronicsTable 1.Device summarySymbol Value Unit I T(RMS)8A V DRM /V RRM600V I GT35 or 50mACharacteristics T835H, T850H2/10Doc ID 13564 Rev 21 CharacteristicsTable 2.Absolute maximum ratingsSymbol ParameterValue Unit I T(RMS)On-state rms current (full sine wave)D 2P AK, TO-220AB T c = 136 °C 8ATO-220AB Ins T c = 123 °C I TSM Non repetitive surge peak on-state current (full cycle, T j initial = 25 °C) F = 50 Hz t = 20 ms 80A F = 60 Hz t = 16.7 ms84I ²t I ²t Value for fusingt p = 10 ms42A ²s dI/dt Critical rate of rise of on-state current I G= 2 x I GT , t r ≤ 100 nsF = 120 HzT j = 150 °C 50A/µs V DSM /V RSMNon repetitive surge peak off-state voltaget p = 10 ms T j = 25 °C V DRM /V RRM+ 100V I GM Peak gate currentt p = 20 µsT j = 150 °C 4A P G(AV)Average gate power dissipation T j = 150 °C 1W T stg T jStorage junction temperature range Operating junction temperature range- 40 to + 150- 40 to + 150°CTable 3.Electrical characteristics (T j = 25 °C, unless otherwise specified)Symbol Test conditionsQuadrantValueUnitT835HT850H I GT (1)V D = 12 V , R L = 33 ΩI - II - III MAX.3550mA V GT I - II - III MAX. 1.0V V GD V D = V DRM , R L = 3.3 k ΩI - II - IIIMIN.0.15V I H (2)I T = 500 mA MAX.3575mA I L I G = 1.2 I GTI - III MAX.5060mA II 80110dV/dt (2)V D = 67% V DRM, gate open, T j = 150 °C MIN.10001500V/µs (dI/dt)c (2)Without snubber, T j = 150 °CMIN.1114A/ms 1.minimum I GT is guaranted at 20% of I GT max.2.for both polarities of A2 referenced to A1.T835H, T850H CharacteristicsDoc ID 13564 Rev 23/10Table 4.Static characteristicsSymbol Test conditionsValue Unit V T (1)I TM = 11 A, t p = 380 µs T j = 25 °C MAX. 1.5V V t0 (1)Threshold voltage T j = 150 °C MAX.0.80V R d (1)Dynamic resistance T j = 150 °C MAX.25m ΩI DRMI RRM (2)V DRM = V RRMT j = 25 °C MAX.5µAT j = 150 °C MAX. 3.1mA V D /V R = 400 V (at peak mains voltage)T j = 150 °C MAX. 2.5V D /V R = 200 V (at peak mains voltage)T j = 150 °CMAX.2.01.for both polarities of A2 referenced to A12.t p = 380 µsTable 5.Thermal resistanceSymbol ParameterValue UnitR th(j-c)Junction to case (AC)D 2P AK / TO-220AB 1.85 °C/W TO-220AB Ins 3.7R th(j-a)Junction to ambientS = 1 cm 2D 2P AK45TO-220AB / TO-220AB Ins60CharacteristicsT835H, T850H4/10Doc ID 13564 Rev 2Figure 1.Maximum power dissipation versusFigure 2.On-state rms current versus caseFigure 3.On-state rms current versus Figure 4.Variation of thermal impedance Figure 5.On-state characteristicsFigure 6.Surge peak on-state current versusT835H, T850HCharacteristicsDoc ID 13564 Rev 25/10Figure 7.Non-repetitive surge peak on-state current for a sinusoidal pulse withFigure 8.Relative variation of I GT ,I H , I L vs junction temperatureFigure 9.Relative variation of critical rate of decrease of main current (dI/dt)cFigure 10.Relative variation of critical rate of decrease of main current versusFigure 11.Leakage current versus junctiontemperature for different values of Figure 12.Variation of thermal resistancejunction to ambient versus copperOrdering information scheme T835H, T850H 2 Ordering information scheme6/10Doc ID 13564 Rev 2T835H, T850H Package informationDoc ID 13564 Rev 27/103 Package information●Epoxy meets UL94, V0●Recommended torque 0.4 to 0.6 N·mIn order to meet environmental requirements, ST offers these devices in different grades ofECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: . ECOPACK ® is an ST trademark.2Package information T835H, T850H8/10Doc ID 13564 Rev 2T835H, T850H Ordering informationDoc ID 13564 Rev 29/104 Ordering information5 Revision historyTable 8.Ordering informationOrder code Marking Package Weight Base qtyDelivery modeT8xxH-6G T8xxH 6G D 2P AK 1.5 g 50T ube T8xxH-6G-TR T8xxH 6G D 2P AK 1.5 g 1000T ape and reelT8xxH-6T T8xxH 6T TO-220AB 2.3 g 50T ube T8xxH-6IT8xxH 6ITO-220AB Ins2.3 g50T ubeTable 9.Document revision historyDate RevisionChanges17-Apr-20071First issue.19-Sep-20112Udated : Features , Description , Figure 2, T able 2 and 4.T835H, T850HPlease Read Carefully:Information in this document is provided solely in connection with ST products. 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UNLESS EXPRESSLY APPROVED N WR T NG BY TWO AUTHOR ZED ST REPRESENTAT VES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. 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All other names are the property of their respective owners.© 2011 STMicroelectronics - All rights reservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America10/10Doc ID 13564 Rev 2分销商库存信息:STMT835H-6G-TR T850H-6T T835H-6IT835H-6T T850H-6I T850H-6G-TR T835H-6G T850H-6G。