DT-2RS1-A7;中文规格书,Datasheet资料

MMBT123S1A NPN SURFACE MOUNT TRANSISTORPlease click here to visit our online spice models database.Maximum Ratings@T A = 25°C unless otherwise specifiedCharacteristic Symbol Value UnitCollector-Base Voltage V CBO45 VCollector-Emitter Voltage V CEO18 VEmitter-Base Voltage V EBO 5 VCollector Current - Continuous I C 1 APower Dissipation (Note 1) P D300 mWThermal Resistance, Junction to Ambient (Note 1) RθJA417 °C/WOperating and Storage Temperature Range T J, T STG-55 to +150 °CElectrical Characteristics@T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Max Unit Test ConditionOFF CHARACTERISTICS (Note 3)Collector-Base Breakdown Voltage V(BR)CBO45 ⎯V I C = 100μA, I E = 0Collector-Emitter Breakdown Voltage V(BR)CEO18 ⎯V I C = 1mA, I B = 0Emitter-Base Breakdown Voltage V(BR)EBO 5 ⎯V I E = 100μA, I C = 0Collector Cutoff Current I CBO⎯ 1 μA V CB = 40V, I E = 0Emitter Cutoff Current I EBO⎯ 1 μA V EB = 4V, I C = 0ON CHARACTERISTICS (Note 3)DC Current Gain h FE150 800 ⎯I C = 100mA, V CE = 1VCollector-Emitter Saturation Voltage V CE(SAT)⎯0.5 V I C = 300mA, I B = 30mASMALL SIGNAL CHARACTERISTICSOutput Capacitance C obo⎯8 pF V CB = 10V, f = 1.0MHz, I E = 0Current Gain-Bandwidth Product f T100 ⎯MHz V CB = 10V, I E = 50mA,f = 100MHzNotes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layoutdocument AP02001, which can be found on our website at /datasheets/ap02001.pdf.2. No purposefully added lead. Halogen and Antimony Free.3. Short duration pulse test used to minimize self-heating effect.4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date CodeV9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.050100255075100125150175200P , P O W E R D I S S I P A T I O N (m W )D T , AMBIENT TEMPERATURE (°C)Fig. 1, Max Power Dissipation vsAmbient TemperatureA 150200250300350400110001000.00010.0010.011100.1h , D C C U R R E N T G A I NF E I , COLLECTOR CURRENT (A)Fig. 2, Typical DC Current Gain vsCollector CurrentC100100.1110100C , O U T P U T C A P A C I T A N C E (p F )O B O V , COLLECTOR-BASE VOLTAGE (V)Fig. 3, Output Capacitance vs.Collector-Base VoltageCB11010001000.00010.0010.010.1110V , C O L L E C T O R -E M I T T E R S A T U R A T I O N V O L T A G E (m V )C E (S A T )I , COLLECTOR CURRENT (A)Fig. 4, Collector Saturation Voltage vsCollector CurrentCOrdering Information (Note 5)Device Packaging ShippingMMBT123S-7-FSOT-233000/Tape & ReelNotes: 5. For packaging details, go to our website at /datasheets/ap02007.pdf.Marking InformationK6D = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006M = Month ex: 9 = SeptemberDate Code KeyYear2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012CodeN P R S T U VWX Y ZMonth Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code123456789ONDIMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.分销商库存信息:DIODESMMBT123S-7MMBT123S-7-F。

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IR2011(S) & (PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol
VB VS VHO VCC VLO VIN dVs/dt PD RTHJA TJ TS TL
Definition
High side floating supply voltage High side floating supply offset voltage High side floating output voltage Low side fixed supply voltage Low side output voltage Logic input voltage (HIN & LIN) Allowable offset supply voltage transient (figure 2) Package power dissipation @ TA £ +25°C Thermal resistance, junction to ambient Junction temperature Storage temperature Lead temperature (soldering, 10 seconds) (8-lead DIP) (8-lead SOIC) (8-lead DIP) (8-lead SOIC)

Interior/exterior LED lighting MR16 LED spot lights Retrofit LED lighting fixtures General purpose industrial and consumer LED applications
产品销售代码说明
ZLED7020-ZI1R ZLED7320-ZI1R ZLED7520-ZI1R ZLED7720-ZI1R ZLED7020KIT-D1 ZLED-PCB8
2.4 通过PWM信号上ADJ引脚输出电流控制...................................... ......................................... 14
2.5 通过微控制器信号ADJ引脚输出电流控制...................................... .......................... 14
包裹
SOT89-5（带卷） DFN-5（带卷） DFN-5（带卷） DFN-5（带卷） Kit 印刷电路电路板（PCB）
芯片中文手册,看全文,戳
ZLED7020
高电流40V LED驱动器,内置开关
内容
1 IC特性.......................................................................................................................................................... 6
3.3.1 检测电阻RS ........................................................................................................................................ 17

N-CHANNEL ENHANCEMENT MODE MOSFETProduct SummaryV (BR)DSS R DS(ON) I DT A = 25°C 100V6.0Ω @ V GS = 10V0.17Description and Applications These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology.These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switchingperformance.These products are particularly suited for low voltage,low current applications such as• Small servo motor control• Power MOSFET gate drivers• Switching applicationsFeatures and Benefits• Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed• Low Input/Output Leakage• High Drain-Source Voltage Rating• Lead, Halogen and Antimony Free, RoHS Compliant • "Green" Device (Notes 1 and 2)Mechanical Data• Case: SOT23 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020• Terminals: Matte Tin Finish annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Weight: 0.008 grams (approximate)Ordering Information (Note 3)Part Number Qualification Case PackagingBSS123-7-FCommercial SOT23 3,000 / Tape & Reel BSS123Q-13 Automotive SOT23 10,000 / Tape & Reel BSS123Q-7Automotive SOT23 3,000 / Tape & ReelNotes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.2. Product manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb 2 O 3 Fire Retardants.3. For packaging details, go to our website at Marking InformationDate Code KeyYear 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017Code T U V WX Y Z A B C D EMonth Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov DecCode 1 2 3 4 5 6 7 8 9 O N DEquivalent Circuit Top View Top View SOT23 GateK = SAT (Shanghai Assembly / Test site) C = CAT (Chengdu Assembly / Test site) 23 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006)M = Month (ex: 9 = September)K23Y MC23Y MMaximum Ratings @T A = 25°C unless otherwise specifiedCharacteristicSymbol Value UnitDrain-Source Voltage V DSS 100 V Gate-Source VoltageContinuous V GSS ±20 V Continuous Drain Current (Note 4) V GS = 10V Continuous I D 170mAPulsedI DM680Thermal Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Max UnitPower Dissipation (Note 4) P D300 mW Thermal Resistance, Junction to Ambient @T A = 25°C (Note 4) R θJA417 °C/W Operating and Storage Temperature Range T J , T STG -55 to +150 °CElectrical Characteristics @ T A = 25°C unless otherwise statedCharacteristicSymbol Min Typ Max Unit Test ConditionOFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV DSS 100 - - V V GS = 0V, I D = 250μAZero Gate Voltage Drain Current I DSS - - 0.1 μA V DS = 100V, V GS = 0V - - 10 nA V DS = 20V, V GS = 0V Gate-Source Leakage , Forward I GSSF - - 50 nA V GS = 20V, V DS = 0VON CHARACTERISTICS (Note 5) Gate Threshold VoltageV GS(th)0.8 1.4 2.0 V V DS = V GS , I D = 1mAStatic Drain-Source On-Resistance R DS (ON)- - 6.0 Ω V GS = 10V, I D = 0.17A- - 10 V GS = 4.5V, I D = 0.17AForward Transfer Admittance g FS 80 370 - mS V DS =10V, I D = 0.17A, f = 1.0KHzDiode Forward VoltageV SD - 0.84 1.3 V V GS = 0V, I S = 0.34A, DYNAMIC CHARACTERISTICS Input Capacitance C iss- 29 60 pF V DS = 25V, V GS = 0V, f = 1.0MHzOutput CapacitanceC oss - 10 15 Reverse Transfer CapacitanceC rss - 2 6 SWITCHING CHARACTERISTICS Turn-On Delay Time t D(on) - - 8 ns V GS = 10V, V DD = 30V,I D = 0.28A, R GEN = 50Ω Turn-On Rise Time t r - - 8 ns Turn-Off Delay Time t D(off) - - 13 nsTurn-Off Fall Timet f--16 nsNotes: 4. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at .5. Short duration pulse test used to minimize self-heating effect.I , D R A I N -S O U R C E C U R R E N T (A )D V , DRAIN-SOURCE VOLTAGE (V)Fig. 1 On-Region Characteristics DSR , N O R M A L I Z E D D R A I N -S O U R C E O N -R E S I S T A N C ED S (O N )I , DRAIN-SOURCE CURRENT (A)Fig. 2 On-Resistance Variation with Gate Voltageand Drain-Source Current D0.8V N O R M A L I Z E D T H R E S H O L D V O L T A G EG S (t h ),T , JUNCTION TEMPERATURE (ºC)Fig. 3 Gate Threshold Variation with T emperature J 0.4R N O R M A L I Z E D O N -R E S IS T A N C ED S (O N ),T , JUNCTION TEMPERATURE (ºC)Fig. 4 On-Resistance Variation with Temperature J 0.6C , C A P A C I T A N C E (p F )V , DRAIN-SOURCE VOLTAGE (V)Fig. 5 Typical CapacitanceDSPackage Outline DimensionsSuggested Pad LayoutSOT23Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.0130.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.0850.18 0.11α0° 8° - All Dimensions in mmDimensions Value (in mm)Z 2.9 X 0.8 Y 0.9C2.0 E1.35 X EYCZIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause thefailure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2012, Diodes Incorporated分销商库存信息:DIODESBSS123-7-F BSS123-7。