SKM100GB128DN中文资料
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This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
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Inverse diode
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Thermal characteristics
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Units
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Preliminary Data
Features
2
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SKM 100GB128DN
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT Zthp(j-c) = f (tp); D = tp/tc = tp*f
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SKM 100GB128DN
Absolute Maximum Ratings Symbol Conditions IGBT
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Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
Units
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SEMITRANSTM 2N SPT IGBT Module
SKM 100GB128DN
Inverse diode
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Characteristics Symbol Conditions IGBT
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Mechanical data
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1
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SKM 100GB128DN
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
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Typical Applications &
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SKM 100GB128DN
Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm
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