HFV80241Z2R中文资料

八重洲2R说明书本翻译说明书从第十一页开始，前一部分的关于本机器的各部件的安装和说明不在此翻译范围内。

注意事项：不许将此说明书做商业用途。

不许公开此说明书（因为一方涉及到厂商的版权问题，另一方面本人水平有限）BG7IUT 翻译2003年10月18日调频：开机，旋转DIAL键可以按事先设定好的步进来调整当前操作波段的频率，顺时针方向可以使频率向高的方向步进，逆时针方向可以使频率向低的方向步进。

按F/W键，用顶部旋纽调1MHz频。

扫描：在VFO模式下，按住BAND 键一秒并用顶部旋纽进行向上或向下扫描。

当接收到一个足够强的信号时，扫描会停止在这个频点上，扫描停止保持的时间是依照你设定的“resume”条件来确定的。

（菜单#31）。

按PTT键退出扫描。

发射：VX-2R只能在144MHz和430MHz发射，发射时，仅仅需要按住PTT键就可以了。

在发射频率范围上，可以选择两种功率。

改变发射功率时，只需按H（高）/L（低）键就可以进行转换。

在高功率发射时，液晶上显示满格发射讯号；在低功率发射时，液晶上只显示两格发射讯号。

在FNB-82Li电池（3.7V）工作下，144MHz高功率时1.5W输出，低功率时0.1W输出；430MHz高功率时1.0W 输出，低功率时0.1W输出。

在外接电源（6.0V）工作下，144MHz 高功率时3W输出，低功率时0.3W输出；430MHz高功率时2.0W 输出，低功率时0.3W输出。

锁键：为了防止意外的频率误调整，面板和DIAL旋钮可以被锁定。

激活锁定功能如下：按住H/L键一秒进入设定模式用顶部旋纽DIAL键选择菜单#25（LOCK）按H/L键进行入设定，然后用顶部旋纽DIAL键选择：KEY（锁定按键），DIAL （锁定旋纽），K+D（锁定按键和旋纽），PTT（锁定发射键），K+P （锁定按键和发射键），D+P（锁定旋纽和发射键），ALL（锁定所有键）。

完成设定后，按PTT键保存新设置并退回正常操作模式。

1DS8024-02 March 2011Featuresz 2.5V to 5.5V Input Rangez Adjustable Output From 0.6V to V INz1.0V, 1.2V, 1.5V, 1.8V,2.5V and3.3V Fixed/Adjustable Output Voltagez 400mA Output Current, 1A Peak Current z 95% Efficiencyz No Schottky Diode Requiredz 1.5MHz Fixed Frequency PWM Operation z Small SOT-23-5 and TSOT-23-5 Package zRoHS Compliant and Halogen FreeApplicationsz Cellular T elephonesz Personal Information Appliances z Wireless and DSL Modems z MP3 PlayerszPortable Instruments1.5MHz, 400mA, High Efficiency PWM Step-Down DC/DC ConverterGeneral DescriptionThe RT8024 is a high-efficiency pulse-width-modulated (PWM) step-down DC/DC converter. Capable of delivering 400mA output current over a wide input voltage range from 2.5V to 5.5V, the RT8024 is ideally suited for portable electronic devices that are powered from 1-cell Li-ion battery or from other power sources within the range such as cellular phones, PDAs and handy-terminals.Internal synchronous rectifier with low R DS(ON) dramatically reduces conduction loss at PWM mode. No external Schottky diode is required in practical application. The RT8024 automatically turns off the synchronous rectifier while the inductor current is low and enters discontinuous PWM mode. This can increase efficiency at light load condition.The RT8024 enters Low-Dropout mode when normal PWM cannot provide regulated output voltage by continuously turning on the upper P-MOSFET . RT8024 enter shutdown mode and consumes less than 0.1μA when EN pin is pulled low.The switching ripple is easily smoothed-out by small package filtering elements due to a fixed operation frequency of 1.5MHz. This along with small SOT-23-5 and TSOT-23-5 package provides small PCB area application.Other features include soft start, lower internal reference voltage with 2% accuracy, over temperature protection,and over current protection.Note :Richtek products are :` RoHS compliant and compatible with the current require-ments of IPC/JEDEC J-STD-020.` Suitable for use in SnPb or Pb-free soldering processes.Ordering InformationPin Configurations(TOP VIEW)SOT-23-5/TSOT-23-5EN GND LXDefault : Adjustable 10 : 1.0V 12 : 1.2V 15 : 1.5V 18 : 1.8V 25 : 2.5V 33 : 3.3VMarking InformationFor marking information, contact our sales representative directly or through a Richtek distributor located in your area.2DS8024-02 March 2011 Layout note:1.The distance that C IN connects to V IN is as close as possible (Under 2mm).2. C OUT should be placed near RT8024.Typical Application CircuitFigure 1. Fixed Voltage RegulatorFigure 2. Adjustable Voltage Regulator⎟⎠⎞⎜⎝⎛+=R2R11 x V V REF OUTwith R2 = 300k Ω to 60k Ω so the I R2 = 2μA to 10μA,and (R1 x C1) should be in the range between 3x10-6 and 6x10-6 for component selection.Layout GuideFigure 3V OUTV INV OUT3DS8024-02 March 2011Function Block DiagramLXFB/VOUTGND4DS8024-02 March 2011 Absolute Maximum Ratings (Note 1)Supply Input Voltage ------------------------------------------------------------------------------------------------------6.5VEnable, FB Voltage -------------------------------------------------------------------------------------------------------V IN + 0.6VPower Dissipation, P D @ T A = 25°CSOT-23-5, TSOT-23-5-----------------------------------------------------------------------------------------------------0.4WPackage Thermal Resistance (Note 2)SOT-23-5, TSOT-23-5, θJA -----------------------------------------------------------------------------------------------250°C/W SOT-23-5, TSOT-23-5, θJC -----------------------------------------------------------------------------------------------130°C/W Junction T emperature Range --------------------------------------------------------------------------------------------150°C Lead Temperature (Soldering, 10 sec.)-------------------------------------------------------------------------------260°CStorage T emperature Range --------------------------------------------------------------------------------------------−65°C to 150°CESD Susceptibility (Note 3)HBM (Human Body Mode)----------------------------------------------------------------------------------------------2kV MM (Machine Mode)------------------------------------------------------------------------------------------------------200VElectrical CharacteristicsTo be continuedRecommended Operating Conditions (Note 4)Supply Input Voltage ------------------------------------------------------------------------------------------------------2.5V to 5.5V Junction T emperature Range --------------------------------------------------------------------------------------------−40°C to 125°CAmbient T emperature Range --------------------------------------------------------------------------------------------−40°C to 85°C5DS8024-02 March 2011Note 1. Stresses listed as the above “Absolute Maximum Ratings ” may cause permanent damage to the device. These are forstress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may remain possibility to affect device reliability.Note 2. θJA is measured in the natural convection at T A = 25°C on a low effective single layer thermal conductivity test board ofJEDEC 51-3 thermal measurement standard. Pin 2 of SOT-23-5/TSOT-23-5 packages is the case position for θJC measurement.Note 3. Devices are ESD sensitive. Handling precaution is recommended.Note 4. The device is not guaranteed to function outside its operating conditions.6DS8024-02 March 2011 Reference Voltage vs. Input Voltage2.533.544.555.5Input Voltage (V)Typical Operating CharacteristicsEfficiency vs. Load Current4050607080901000.010.110.210.310.410.510.61Load Current (A)E f f i c i e n c y (%)Current Limit vs. Input Voltage2.533.544.555.5Input Voltage (V)C u r r e n t L i m i t (A )Frequency vs. Input Voltage2.533.544.555.5Input Voltage (V)F r e q u e n c y (M H z )Frequency vs. Temperature1.301.331.351.381.401.431.451.481.50-50-25255075100125Temperature F r e q u e n c y (M H z )(°C)Output Voltage vs. Load Current1.1801.1851.1901.1951.2001.2051.2101.2151.2200.010.110.210.310.410.510.61Load Current (A)O u t p u t V o l t a g e (V )7DS8024-02 March 2011Output Voltage vs. Temperature1.151.171.191.211.231.25-50-25255075100125Temperature O ut p u t V o l t a g e (V )(°C)Output RippleTime (500ns/Div)I LX(500mA/Div)V LX (5V/Div)V IN = 3.3V, V OUT = 1.2V, I OUT = 400mAV OUT (5mV/Div)Power OffTime (100μs/Div)I IN(200mA/Div)V OUT (1V/Div)V IN = 3.3V, V OUT = 1.2V, I OUT = 400mAV EN (5V/Div)Load Transient ResponseTime (50μs/Div)I OUT(200mA/Div)V OUT (20mV/Div)V IN = 3.3V, V OUT = 1.2V, I OUT = 200mA to 400mALoad Transient ResponseTime (50μs/Div)I OUT(200mA/Div)V OUT (20mV/Div)V IN = 3.3V, V OUT = 1.2V, I OUT = 100mA to 400mAPower OnTime (100μs/Div)I IN(200mA/Div)V OUT (1V/Div)V IN = 3.3V, V OUT = 1.2V, I OUT = 400mAV EN (5V/Div)8DS8024-02 March 2011 Applications InformationThe basic RT8024 application circuit is shown in Typical Application Circuit. External component selection is determined by the maximum load current and begins with the selection of the inductor value and operating frequency followed by C IN and C OUT .Inductor SelectionFor a given input and output voltage, the inductor value and operating frequency determine the ripple current. The ripple current ΔI L increases with higher V IN and decreases with higher inductance.Having a lower ripple current reduces the ESR losses inthe output capacitors and the output voltage ripple. Highest efficiency operation is achieved at low frequency with small ripple current. This, however, requires a large inductor.A reasonable starting point for selecting the ripple current is ΔI L = 0.4(I MAX ). The largest ripple current occurs at the highest V IN . To guarantee that the ripple current stays below a specified maximum, the inductor value should be chosen according to the following equation :Inductor Core SelectionOnce the value for L is known, the type of inductor must be selected. High efficiency converters generally cannot afford the core loss found in low cost powdered iron cores,forcing the use of more expensive ferrite or mollypermalloy cores. Actual core loss is independent of core size for a fixed inductor value but it is very dependent on the inductance selected. As the inductance increases, core losses decrease. Unfortunately, increased inductance requires more turns of wire and therefore copper losses will increase.Ferrite designs have very low core losses and are preferred at high switching frequencies, so design goals can concentrate on copper loss and preventing saturation.Ferrite core material saturates “hard ”, which means that inductance collapses abruptly when the peak design⎦⎤⎢⎣⎡−⎥⎦⎤⎢⎣⎡×=IN OUT OUT L V V 1L f V ΔI ⎥⎦⎤⎢⎣⎡−⎥⎦⎤⎢⎣⎡Δ×=IN(MAX)OUT L(MAX)OUT V V 1I f V L current is exceeded. This results in an abrupt increase in inductor ripple current and consequent output voltage ripple.Do not allow the core to saturate!Different core materials and shapes will change the size/current and price/current relationship of an inductor.T oroid or shielded pot cores in ferrite or permalloy materials are small and don ’t radiate energy but generally cost more than powdered iron core inductors with similar characteristics. The choice of which style inductor to use mainly depends on the price vs size requirements and any radiated field/EMI requirements.C IN and C OUT SelectionThe input capacitance, C IN , is needed to filter the trapezoidal current at the source of the top MOSFET. To prevent large ripple voltage, a low ESR input capacitor sized for the maximum RMS current should be used. RMS current is given by :1V V V V I I OUTININOUT OUT(MAX)RMS −=This formula has a maximum at V IN = 2V OUT , where I RMS = I OUT /2. This simple worst-case condition is commonly used for design because even significant deviations do not offer much relief. Note that ripple current ratings from capacitor manufacturers are often based on only 2000hours of life which makes it advisable to further derate the capacitor, or choose a capacitor rated at a higher temperature than required. Several capacitors may also be paralleled to meet size or height requirements in the design.The selection of C OUT is determined by the effective series resistance (ESR) that is required to minimize voltage ripple and load step transients, as well as the amount of bulk capacitance that is necessary to ensure that the control loop is stable. Loop stability can be checked by viewing the load transient response as described in a later section.The output ripple, ΔV OUT , is determined by :⎦⎤⎢⎣⎡+≤OUT L OUT 8fC 1ESR ΔI ΔV The output ripple is highest at maximum input voltagesince ΔI L increases with input voltage. Multiple capacitors placed in parallel may be needed to meet the ESR and RMS current handling requirements. Dry tantalum, special9DS8024-02 March 2011Output Voltage ProgrammingThe resistive divider allows the V FB pin to sense a fraction of the output voltage as shown in Figure 4.)R2R1(1V V REF OUT += Figure 4. Setting the Output Voltagewhere V REF is the internal reference voltage (0.6V typ.)Efficiency ConsiderationsThe efficiency of a switching regulator is equal to the output power divided by the input power times 100%. It is often useful to analyze individual losses to determine what is limiting the efficiency and which change would produce the most improvement. Efficiency can be expressed as :Efficiency = 100% − (L1+ L2+ L3+ ...)where L1, L2, etc. are the individual losses as a percentage of input power. Although all dissipative elements in the circuit produce losses, two main sources usually account for most of the losses : VIN quiescent current and I 2R losses. The VIN quiescent current loss dominates the efficiency loss at very low load currents whereas the I 2R loss dominates the efficiency loss at medium to high load currents. In a typical efficiency plot, the efficiency curve at very low load currents can be misleading since the actual power lost is of no consequence.1. The VIN quiescent current is due to two components :the DC bias current as given in the electrical characteristics and the internal main switch and synchronous switch gate charge currents. The gate charge current results from switching the gate capacitance of the internal power MOSFET switches. Each time the gate is switched from high to low to high again, a packet of charge ΔQ moves from V IN to ground.The resulting ΔQ/Δt is the current out of V IN that is typically larger than the DC bias current. In continuous mode,I GATECHG = f(Q T +Q B )where Q T and Q B are the gate charges of the internal top and bottom switches. Both the DC bias and gate charge losses are proportional to V IN and thus their effects will be more pronounced at higher supply voltages.2. I 2R losses are calculated from the resistances of the internal switches, R SW and external inductor R L . In continuous mode the average output current flowing through inductor L is “chopped ” between the main switch and the synchronous switch. Thus, the series resistance looking into the LX pin is a function of both top and bottom MOSFET R DS(ON) and the duty cycle (DC) as follows :R SW = R DS(ON)TOP x DC + R DS(ON)BOT x (1−DC)The R DS(ON) for both the top and bottom MOSFETs can be obtained from the Typical Performance CharacteristicsFor adjustable about voltage mode, the output voltage is set by an external resistive divider according to the following equation :V OUTpolymer, aluminum electrolytic and ceramic capacitors are all available in surface mount packages. Special polymer capacitors offer very low ESR but have lower capacitance density than other types. Tantalum capacitors have the highest capacitance density but it is important to only use types that have been surge tested for use in switching power supplies. Aluminum electrolytic capacitors have significantly higher ESR but can be used in cost-sensitive applications provided that consideration is given to ripple current ratings and long term reliability. Ceramic capacitors have excellent low ESR characteristics but can have a high voltage coefficient and audible piezoelectric effects.The high Q of ceramic capacitors with trace inductance can also lead to significant ringing.Using Ceramic Input and Output CapacitorsHigher values, lower cost ceramic capacitors are now becoming available in smaller case sizes. Their high ripple current, high voltage rating and low ESR make them ideal for switching regulator applications. However, care must be taken when these capacitors are used at the input and output. When a ceramic capacitor is used at the input and the power is supplied by a wall adapter through long wires, a load step at the output can induce ringing at the input, V IN . At best, this ringing can couple to the output and be mistaken as loop instability. At worst, a sudden inrush of current through the long wires can potentially cause a voltage spike at V IN large enough to damage the part.10DS8024-02 March 2011 curves. Thus, to obtain I 2R losses, simply add R SW to R L and multiply the result by the square of the average output current.Other losses including C IN and C OUT ESR dissipative losses and inductor core losses generally account for less than 2% of the total loss.Thermal ConsiderationsThe maximum power dissipation depends on the thermal resistance of IC package, PCB layout, the rate of surroundings airflow and temperature difference between junction to ambient. The maximum power dissipation can be calculated by following formula :P D(MAX) = ( T J(MAX) - T A ) / θJAWhere T J(MAX) is the maximum operation junction temperature 125°C, T A is the ambient temperature and the θJA is the junction to ambient thermal resistance.For recommended operating conditions specification of RT8024 DC/DC converter, where T J (MAX) is the maximum junction temperature of the die (125°C) and T A is the maximum ambient temperature. The junction to ambient thermal resistance θJA is layout dependent. For SOT-23-5/TSOT-23-5 packages, the thermal resistance θJA is 250°C/W on the standard JEDEC 51-3 single-layer thermal test board. The maximum power dissipation at T A = 25°C can be calculated by following formula :P D(MAX) = ( 125°C - 25°C ) / 250 = 0.4 W for SOT-23-5/TSOT-23-5 packagesThe maximum power dissipation depends on operating ambient temperature for fixed T J(MAX) and thermal resistance θJA . For RT8024 packages, the Figure 5 of derating curves allows the designer to see the effect of rising ambient temperature on the maximum power allowed.The value of junction to case thermal resistance θJC is popular for users. This thermal parameter is convenient for users to estimate the internal junction operated temperature of packages while IC operating. It's independent of PCB layout, the surroundings airflow effects and temperature difference between junction to ambient.The operated junction temperature can be calculated by following formula :T J = T C + P D x θJCWhere T C is the package case (Pin 2 of package leads)temperature measured by thermal sensor, P D is the power dissipation defined by user's function and the θJC is the junction to case thermal resistance provided by IC manufacturer. Therefore it's easy to estimate the junction temperature by any condition.Checking Transient ResponseThe regulator loop response can be checked by looking at the load transient response. Switching regulators take several cycles to respond to a step in load current. When a load step occurs, V OUT immediately shifts by an amount equal to ΔI LOAD (ESR), where ESR is the effective series resistance of C OUT . ΔI LOAD also begins to charge or discharge C OUT generating a feedback error signal used by the regulator to return V OUT to its steady-state value.During this recovery time, V OUT can be monitored for overshoot or ringing that would indicate a stability problem.Layout ConsiderationsFollow the PCB layout guidelines for optimal performance of RT8024.` For the main current paths as indicated in bold lines inFigure 6, keep their traces short and wide.` Put the input capacitor as close as possible to the devicepins (VIN and GND).` LX node is with high frequency voltage swing and shouldbe kept small area. Keep analog components away from LX node to prevent stray capacitive noise pick-up.Figure 5. Derating Curves for RT8024 Package 05010015020025030035040045020406080100120140Ambient Temperature (°C)M a x i m u m P o w e r D i s s i p a t i o n (m W )RT802411DS8024-02 March 2011} Connect feedback network behind the output capacitors.Keep the loop area small. Place the feedback components near the RT8024.} Connect all analog grounds to a command node andthen connect the command node to the power ground behind the output capacitors.Figure 6. EVB SchematicC410uFSuggested Capacitors for C IN and C OUTRT802412DS8024-02 March 2011Outline DimensionA1HLSOT-23-5 Surface Mount PackageRT802413DS8024-02 March 2011Richtek Technology CorporationHeadquarter5F, No. 20, Taiyuen Street, Chupei City Hsinchu, Taiwan, R.O.C.Tel: (8863)5526789 Fax: (8863)5526611Information that is provided by Richtek Technology Corporation is believed to be accurate and reliable. Richtek reserves the right to make any change in circuit design, specification or other related things if necessary without notice at any time. No third party intellectual property infringement of the applications should be guaranteed by users when integrating Richtek products into any application. No legal responsibility for any said applications is assumed by Richtek.Richtek Technology CorporationTaipei Office (Marketing)5F, No. 95, Minchiuan Road, Hsintien City Taipei County, Taiwan, R.O.C.Tel: (8862)86672399 Fax: (8862)86672377Email:*********************TSOT-23-5 Surface Mount PackageA1HL。

pn8024r电源芯片工作原理一、引言PN8024R是一款高效率、低功耗的电源管理芯片，广泛应用于移动设备、智能家居等领域。

本文将详细介绍PN8024R的工作原理。

二、PN8024R的主要特点1. 高效率：PN8024R采用了高效的降压转换器技术，能够实现高达95%以上的转换效率。

2. 低功耗：PN8024R在待机模式下能够降低功耗至微安级别，大大延长了电池寿命。

3. 多种保护功能：PN8024R具备过流保护、过温保护等多种保护功能，保障设备安全运行。

三、PN8024R的工作原理1. 输入电压稳压当输入电压变化时，PN8024R会自动调节输出电压以保持稳定。

其工作原理如下：（1）当输入电压升高时，芯片内部控制器会减小开关管导通时间，从而降低输出电压；（2）当输入电压降低时，芯片内部控制器会增加开关管导通时间，从而提高输出电压。

2. 输出过流保护当输出负载过大时，PN8024R会自动切断输出以保护芯片和负载。

其工作原理如下：（1）当输出负载过大时，芯片内部控制器会感知到这种情况，并立即切断开关管的导通；（2）此时输出电压会急剧下降，从而使芯片内部控制器进入保护模式。

3. 过温保护当PN8024R温度过高时，芯片内部控制器会立即采取措施降低温度。

其工作原理如下：（1）当PN8024R温度升高到一定程度时，芯片内部控制器会自动减少开关管的导通时间；（2）这样可以降低芯片功耗和热量产生，从而达到散热的效果。

四、PN8024R的应用场景PN8024R广泛应用于移动设备、智能家居等领域。

其主要应用场景包括：1. 手机、平板电脑等移动设备中的电源管理；2. 智能家居中各种传感器和执行机构的电源管理。

五、总结PN8024R作为一款高效率、低功耗的电源管理芯片，在移动设备、智能家居等领域得到了广泛应用。

本文详细介绍了PN8024R的工作原理，包括输入电压稳压、输出过流保护和过温保护等方面。

Fiber-Optic Transmitter and ReceiverReliability Data IntroductionAgilent Technologies’ quality system includes an ongoing reliability monitor program to generate a data base from which this reliability data sheet is published.Transmitter Reliability The HFBR-0400 Series fiberoptic transmitters incorporate AlGaAs emitters and double lens optical systems. This design allows the HFBR-14XX transmitters to be driven at a relatively low current level for a specified amount of coupled power into the fiber. Because transmitter forward currents are proportional to failure rates, a low current translates into excellent transmitter reliability. To further improve reliability, Agilent has implemented a proprietary wafer screening technology that identifies dislocations whichcan lead to the formation of darkline defects (the primary mechanism for transmitter light output failures).HFBR-0400 SeriesTransmitters:HFBR-1402, -1412, -1404, -1414Receivers:HFBR-2402, -2412, -2406, -2416 Transmtter reliability data hasbeen calculated using 100 mAforward current and a 100% dutyfactor. In many actual useconditions, a 50% duty factor andlower forward currents are highlyprobable. When this is true,transmitter reliability will besubstantially better. The degree ofimprovement can be projected byexamining the footnotes below theHFBR-14XX data.Reliability PredictionModelThe reliability prediction modelused to project failure rate andmean time to failure (MTTF) atvarious temperatures shown in thesecond table assumes anexponential cumulative failurefunction (constant failure rate).The Arrhenius temperaturederating equation is used. AgilentTechnologies assumes no failuremechanism change between stressand use conditions. A conservativeactivation energy of 0.43 eV wasused and is derived from MIL-HDBD-217 for hybrid devices.Confidence intervals are basedupon the chi-squaredprediction method associated withexponential distributions.Fiber-Optic TransmitterReliability Data HFBR-1402HFBR-1412HFBR-1404HFBR-1414High Temperature Operating Life TestA. Demonstrated PerformanceTest Equivalent Test Condition Samples Device Hours Failures HTOL T A = 85°C, I F = 100 mA880 units879,5003B. Failure CriteriaFailure has occurred when the unitfails catastrophically, or when thelight output power decreases 3 dB.Point Typical PerformancePerformance [1]in Time [2]in Time(90% Confidence) Ambient Junction MTTF [1]FITs [3]MTTF [2]FITs [3] Temperature (°C)Temperature (°C)(hours)(/109 Hours)(hours)(/109 Hours) 85100293,0003411131,00075968095352,0002844158,00063347590424,0002360190,00052557085514,0001947231,00043376580626,0001598281,00035606075766,0001305344,00029055570945,0001059424,000235750651,172,000854526,000190145601,462,000684657,000152340551,838,000544825,000121235502,326,0004301,044,00095830452,965,0003371,331,00075125403,810,0002631,711,000585C. Failure Rate Prediction for Random Failures (I F @ 100 mA, 100% duty cycle)Notes:1. The point MTTF (representing an esti-mate of the mean point MTTF) is the total device hours divided by either the number performance that is expected from 90% ofall samples. This confidence interval isbased on the statistics of the distribution offailure rates prior to the onset of wear out.Refer to MIL-STD-690 for details of thismethodology.Fiber-Optic Link ReceiverReliability DataHFBR-2402HFBR-2412High Temperature Operating Life TestA. Demonstrated PerformanceTest Equivalent Test Condition Samples Device Hours Failures HTOL T A = 85°C, V CC = 5.25 V3,9602,370,0001B. Failure CriteriaFailure has occurred when the unitfails catastrophically. One devicefailed to switch logic states.Point Typical PerformancePerformance [1]in Time [2]in Time(90% Confidence) Ambient Junction MTTF [1]FITs [3]MTTF [2]FITs [3] Temperature (°C)Temperature (°C)(hours)(/109 Hours)(hours)(/109 Hours) 851002,370,000421609,0001,64080952,880,000346742,0001,34075903,530,000282909,0001,09070854,350,0002291,120,00089265805,400,0001841,390,00071960756,740,0001481,730,00057655708,480,0001172,180,000458506510,700,000932,750,000362456013,600,000733,510,000284405517,500,000564,520,000221355022,700,000435,850,000170304529,700,000337,650,000130254039,200,0002510,000,00099C. Failure Rate Prediction, Receiver (V CC = 5.25 V)Notes:1. The point MTTF (representing an esti-mate of the mean point MTTF) is the total device hours divided by either the number performance that is expected from 90% ofall samples. This confidence interval isuseful life failures. Refer to MIL-STD-690 fordetails of this methodology.Fiber-Optic Link ReceiverReliability DataHFBR-2406HFBR-2416High Temperature Operating Life TestA. Demonstrated PerformanceTest Equivalent Test Condition Samples Device Hours Failures HTOL T A = 85°C, V CC = 5.25 V2,2502,250,0000B. Failure CriteriaFailure has occurred when the unitfails catastrophically.Point Typical PerformancePerformance [1]in Time [2]in Time(90% Confidence) Ambient Junction MTTF [1]FITs [3]MTTF [2]FITs [3] Temperature (°C)Temperature (°C)(hours)(/109 Hours)(hours)(/109 Hours) 851002,250,000444977,164102380952,698,5163711,171,95385375903,252,6873071,412,62770870853,941,1732541,711,63358465804,801,4322082,085,24048060755,882,7441702,554,84939155707,250,3821383,148,80831850658,991,4071113,904,927256456011,222,799894,874,010205405514,102,949716,124,846163355017,848,023567,751,315129304522,755,516449,882,616101254029,238,4093412,698,10779C. Failure Rate Prediction, Receiver (V CC = 5.25 V)Notes:1. The point MTTF (representing an esti-mate of the mean point MTTF) is the total device hours divided by either the number performance that is expected from 90% ofall samples. This confidence interval isuseful life failures. Refer to MIL-STD-690 fordetails of this methodology.HFBR-0400 Mechanical and Environmental Test Data [1]MIL-STD-883D Units Total Test Name Reference Test Conditions Tested Failed Temperature Cycle1010500 cycles from -55 to +125°C, 15 minutes20201at extremes, 5 minutes transfer. [1]HFBR-1414500 cycles from -55 to +125°C, 15 minutes20900at extremes, 5 minutes transfer.[1]HFBR-2416 85/85T A = 85°C, 85% relative humidity,21407No bias, duration = 1,000 hours. [1]HFBR-1414T A = 85°C, 85% relative humidity,22206V CC = 5 volts, Duration = 1,000 hours[1]HFBR-2416 High Temperature1008T A = 125°C800 Storage Condition B1000 hoursResistance to2015Three 1 minute immersions.200 Solvents Brush after solvent immersion.Chemical Resistance— 5 minutes in Acetone, Methanol, Freon TF200and Boiling WaterVibration Variable 2007,20 G min., 20 to 2000 Hz.200 Frequency Condition B4, 4 minute cycles each X, Y, and Z.Thermal Shock1011-55°C to +125°C, 15 cycles600Condition B 5 min. dwell / 10 sec. transferMechanical Shock2002, 5 blows each X1, X2, Y1, Y2, Z1, Z2600Condition B1500 G, 0.5 msec. pulse.Port Wear Test [2]T A = 25°C500 connectorings200Less than 1 dBm variationConnector Side T A = 25°C 1 kg side load100 Load [3]Less than 1 dBm variationPort Strength [4]T A = 25°C 6 kg-cm (5.21 inch-lbs), no port damage100 Seal-Dye Penetrant101445 psi, 10 hours200 (Zyglo)Condition D No Leakage into microelectronic cavitySolderability2003245°C300 ESD Method 3015Human body model @ 10,000 V50HFBR-1414Human body model @ 2,000 V50HFBR-2402Human body model @ 1000 V50HFBR-2416Notes: See following page.Notes:1. Devices were preconditioned with 10 second, 260°C solder dip and 20 cycles, -40°C to 85°C, temperature cycle.2. Coupled power measurements were maximized before and after stress in determining the 1 dBm variation for SMA HFBR-0400 products. HFBR-0400 ST products do not require this due to the improved coupling design.3. The Connector Side Load test was only applied to HFBR-0400 SMA products. The Connector Side Load testing required that the housing be held so to prevent the leads from yielding. The load was applied through a SMA connectored fiber optic cable, perpendicular to the port. The product family is designed to limit cable and ferrule damage due to cable loading. The support and active leads should yield before damage to the cable or connector occurs. If extreme mechanical abuse of the cable/ connector is anticipated please contact Agilent’s Application Department for suggestions about mechanical strain relief. Due to the spring loaded feature of the ST connector, HFBR-0400 ST products will experience 1 dBm coupled power variation at a side load of less than 1 kg.4. The Port Strength test was designed to gauge the concerns with hand tightening the connector to the fiber optic port. The limit is set to alevel beyond most reasonable hand fastening loading.5. Package tests are defined as stresses that indicate the environmental strength of the package. Units tested indicate the total number of devices taken from the product family. While not all part numbers have been subjected to each stress, worst case products have been included.。