当前位置：文档之家 › GPD2111

GPD2111

  • 格式：pdf
  • 大小：1.19 MB
  • 文档页数：13

GPD2111请联系１３４８９１９７０２８廖先生　或加Ｑ　４７４２６０３３４咨询V1.0 – May 11, 2012(Draft) Room17A, BuildingA,Huaqiang Plaza,Huaqiang North Road,Futian District,Shenzhen.China.Table of ContentGPD2111A的應用說明 (3)1概述 (3)2主要特色 (3)3產品應用 (3)4管腳定義 (4)5封裝片尺寸圖 (5)6按鍵操作功能 (6)7FM MODULE (7)8音頻功放的控制 (7)9LED燈號 (8)10主要電氣特性 (9)11原理圖 (10)GPD2111A的應用說明1 概述GPD2111A是專為無屏插卡MP3播放器的應用而設計的芯片。

針對不同的內容存儲裝置提供了讀取SD卡/TF卡上的，以及U盤上的MP3歌曲來播放。

主控也可以自動判別有無外掛FM接收芯片來決定開放收音機操作與播放的功能與否。

針對外部按鍵的規劃，GPD2111A透過1根AD接口來操作各式各樣的鍵盤的操作，方便各種機型與不同應用的規劃。

最大的特色在於GPDS2111A以SSOP20pin封裝片, 對於許多不需要使用到收音機功能的應用下，還可以進一步省去晶振，實現了性價比極高的解決方案。

2 主要特色z無屏方案。

z SD/TF卡接口，無需IO口硬件偵測，軟件即可直接偵測SD/TF卡的插拔。

z播放SD/TF卡內的MP3歌曲。

z具備USB host功能，可以播放U盤上的MP3歌曲。

z若產品不需要FM收音機功能，主控不需要外掛晶振，節省物料及生產成本。

z若產品需要FM收音機功能，可把晶振放在FM收音芯片端；如此，有無收音機功能的應用可以共板，無收音機應用仍然不需要外掛晶振。

z透過I2C控制外置FM接收芯片 (RDA5807MP或BK1080) 或者外置EEPRO M。

z主控會自動判別是否PCBA上有外置的EEPROM; 如果有的話就優先把設定儲存到EEPROM, 沒有的話就改存到TF卡。

z主控會自動判斷是否有FM功能，有/無FM功能都可以共用同一固件並且PC B 共板。

z以1根ADC口來實現各種按鍵組合。

z可以直推立体聲耳機。

z主控只需要單一電源輸入=鋰電池。

z一顆LED，除了顯示播放狀態外，亦可做為低電量警示，在電量低於3.2V時會閃爍警告。

z不支援紅外遙控。

z封裝型態: SSOP 20 pin。

3 產品應用無屏迷你音箱，運動耳機，…Fo r4 管腳定義號名稱功能描述1 VSS_PLL 主控接地2 DM USB 的data 線3 DPUSB 的data 線4 SDC_CLK (IOB1) SD/T-flash 卡的clock5 I2C_DAT (IOB6) I2C的data; 連接EEPROM 或者FM 接收芯片 6 SDC_CMD (IOB0)SD/T-flash 卡的command 7 I2C_CLK (IOB5) I2C 的clock; 連接EEPROM 或者FM 接收芯片 8 SDC_D0 (IOB2) SD/T-flash卡的data 9 VDACREF 主控內部模擬電路的參考電平; 請掛10uF 電容穩壓10 DACOL 耳機左聲道模擬輸出 11 VSS_DA16 主控內部模擬電路的接地12 VCC_DA16 主控內部模擬電路的電源輸入.請透過電阻與系統3.0V 電源接在一起. 13 DACOR 耳機右聲道模擬輸出14 AD-key (IOA4) 按鍵輸入, 以外掛一整排分壓電阻來區分各個按鍵. 15 Mute (IOB4)用來挑選,並控制外置喇叭功放是開啟或是靜音. 當IOB4不外掛電阻: 支持high-active 的功放.當IOB4外掛1KΩ下拉電阻: 支持low-active 的功放. 16 IOB3 保留未來擴充使用17 LED (IOA5) 控制LED 顯示, 可以不串電阻就直推LED. 18 VCC_12 主控內部1.2V 電源輸出, 請外掛2.2uF 電容穩壓. 19 V50_REG 主控電源輸入, 直接接到鋰電池(3.6~4.2V)或5VDC.20 V33_REG主控內部3.0V 電源輸出, 也用來提供其他外置元件的3.0V 電壓;請在此管腳外掛0.1uF 和10uF 電容穩壓.5 封裝片尺寸圖6 按鍵操作功能MP3模式 FM模式按鍵短按長按短按長按S1 Play/Pause Mode切換搜索所有電台,並儲存 Mode切換S2 Previous V olume-- 1).有EEPROM,或者有SD卡時：跳上一個儲存的電台2).無EEPROM,無SD卡,且系統無儲存搜台資料時,往87.5MHz搜台V olume--S3 Next V olume++ 1).有EEPROM,或者有SD卡時：跳上一個儲存的電台2).無EEPROM,無SD卡,且系統無儲存搜台資料時,往108.0MHz搜台V olume++S4 V olume- V olume-- V olume- V olume--S5 V olume+ V olume++ V olume+ V olume++ S6 Mode切換Mode切換S7 EQ切換S8 Repeat單曲S9 Previous 快退 1).有EEPROM,或者有SD卡時：跳上一個儲存的電台2).無EEPROM,無SD卡,且系統無儲存搜台資料時,往87.5MHz搜台往87.5MHz搜台S10 Next 快進 1).有EEPROM,或者有SD卡時：跳上一個儲存的電台2).無EEPROM,無SD卡,且系統無儲存搜台資料時,往108.0MHz搜台往108.0MHz搜台S11 Previous V olume-- 往87.5MHz搜台V olume-- S12 Next V olume++ 往108.0MHz搜台V olume++S13 Play/Pause 1).假如系統有儲存電台,跳上一個儲存的電台2).假如系統沒有儲存任何電台,就執行重新搜索全部電台並重新儲存重新搜索全部電台並重新儲存(6-1) FM模式下的所謂「往87.5MHz搜索」,是指由目前頻道往87.5MHz方向搜索最近的有效電台,然後停下來播放該電台; 「往108.0MHz搜索」則是往108.0MHz方向搜索最近的有效電台,然後停下來播放該電台。

(6-2) FM電台最多儲存50台。

(6-3) 「V olume-」代表音量減一級後就停止, 直到再重新按一次該按鍵才會又減一級;「V olume--」代表只要按鍵還被按著, 音量就持續一直遞減下去, 直到鬆開按鍵或音量變0。

(6-4) 「Mode切換」順序是: U盤ÆSD卡/TF卡ÆFM; 循環切換。

Module7 FM(7-1) 目前支持的FM收音芯片有2種, 一個是BK1080, 另一個是RDA5807M P。

(7-2) 透過I2C控制FM音量; I2C的clock與data線上請各串聯一個1KΩ電阻再接到主控。

(7-3) FM接收芯片的Left和Right輸出, 必須透過電容+電阻與主控芯片的L和R接在一起8 音頻功放的控制IOB4用來控制外置喇叭功放(8-1) 當應用電路上的IOB4有外掛1KΩ的下拉電阻的話, 代表外掛功放是low-active的;即IOB4輸出low時會把功放打開而聽到聲音; 當IOB4輸出high時會關掉功放而靜音。

(8-2) 當應用電路上的IOB4是懸空的, 代表外掛功放是high-active; 即IOB4輸出high時會把功放打開而聽到聲音; 當IOB4輸出low時反而會關掉功放而靜音。

9 LED燈號10 主要電氣特性(10-1) Absolute maximum ratingValueUnit Rating SymbolSupply Voltage 1 V33_REG 0 to 3.6 VSupply Voltage 2 V33_DA16 0 to 3.6 VSupply Voltage 3 V12_REG 0 to 1.32 VSupply Voltage 4 V50_REG 0 to 4.2 VInput Voltage V IN0 to 3.6 VOperating Temperature T A0 to 85 ℃Storage Temperature T STG-40 to +150 ℃(10-2) DC characteristicsLimitsUnit ConditionCharacteristic SymbolMin. Typ. Max.Operating Voltage 1 V33_REG 3.0 3.1 3.6 V -Operating Voltage 2 V33_DA16 3.0 3.1 3.6 V -Operating Voltage 3 V12_REG 1.08 1.2 1.32 V -Operating Voltage 4 V50_REG 3.0 4.2 4.5 VOperating Current I OP- 13 - mA@48MHz, 3.3V, all clocks onMode Power Down Current I PD- TBD - μA HaltHigh Input Voltage V IH0.7VCC_33- VCC_33V -V - Low Input Voltage V IL VSS - 0.8Crystal Frequency - - 32768 - Hz -System Clock F SYS256Hz 48 48 MHz-(10-3) DAC characteristicsLimitsUnit ConditionCharacteristicMin. Typ. Max.Bit - Resolution - 16 -Full Scale Output Voltage - 2 - Vp-p -Noise at No Signal -85 90 - dBv -(10-4) RegulatorsUnitUnitCharacteristics SymbolMin. Typ. Max.Input Voltage V50_REG 3.0 4.2 5 VVoltage V33_REG 3.0 3.1 3.6 V InputVoltage V33_REGO - 3.1 - V OutputOutput Voltage V12_REGO - 1.2 - VFo r11 原理圖 (11.1) 主控部份DAC 的電源V33_DA16必須掛10uF 穩壓電容,其中心穩壓pin 9 (DA VREF)也必須掛10uF 穩壓電容。

合集下载

2011最新笔记本电脑处理器(CPU)性能排行榜10.31

2011最新笔记本电脑处理器(CPU)性能排行榜10.31


2600-3300 2/4 核心/ 线程
32 工艺(纳 米) 32 45 32 32 64 位
型号
主频(MHz)
Intel Core i7 620M Intel Core i7 740QM Intel Core i5 2520M Intel Core i5 580M
2660-3333 2/4 1730-2930 4/8 2500-3200 2/4 2666-3333 2/4
2260-2533 2/4 2400 2/4 核心/ 线程 2/4
型号
主频(MHz)
Intel Core i3 2310M Intel Core i7 640LM Intel Core i7 2657M Intel Core i5 2557M Intel Core 2 Duo SP9600 Intel Core 2 Duo P9500 Intel Core i7 620LM Intel Core 2 Duo T9400 Intel Core 2 Duo P8800 Intel Core 2 Duo T9300 AMD Phenom II X2 N660 Intel Core i3 350M Intel Core 2 Extreme
2130-2933 2/4 1600-2700 2/4 1700-2700 2/4 2530 2530 2/2 2/2
2000-2800 2/4 2530 2660 2500 3000 2260 2/2 2/2 2/2 2/2 2/4
70 X7800 71 72 73 Intel Core 2 Duo T7800 Intel Core 2 Duo P8700 AMD Phenom II X2 N640 AMD Phenom II X4 X940 74 BE
称霸千元级显卡市场GeForce 7600GS完全选购手册

称霸千元级显卡市场GeForce 7600GS完全选购手册

称霸千元级显卡市场GeForce 7600GS完全选购手册
洪琦
【期刊名称】《现代计算机（普及版）》
【年(卷),期】2006(000)006
【摘要】@@ 7600GS市场分析及选购指南rn在不久前nVIDIA停产6600GT 芯片后,N卡在千元产品线完成了由6系到7系的新老更替.作为新一代中端主力,采用90nm制程的7600GS核心频率比6600GT更高;芯片成本比110nm工艺的6600GT更低;而自由搭配的GDDR2/GDDR3显存也让7600GS更加灵活.可以说,随着7600GS的全面铺货,它已成为目前千元级显卡中最具性价比的代表产品.【总页数】5页(P73-77)
【作者】洪琦
【作者单位】无
【正文语种】中文
【相关文献】
1.手机选购之完全手册——手机选购之功能全接触 [J], 闫跃龙
2.媲美GeForce 7600GT——讯景GeForce 7600GS DDR3 评测 [J], QQ糖
3.GeForce 6600GT光荣下岗 XFX GeForce 7600GS显卡 [J],
4.GeForce 6600GT光荣下岗XFX GeForce 7600GS显卡 [J],
5.“鲶鱼效应”引发显卡市场风云突变 Maxwell900系上市后高端显卡不完全选购指南 [J], 刘忆冰
因版权原因，仅展示原文概要，查看原文内容请购买。

AP2111SG-13;AP2101MPG-13;AP2101SG-13;AP2111MPG-13;中文规格书,Datasheet资料

AP2111SG-13;AP2101MPG-13;AP2101SG-13;AP2111MPG-13;中文规格书,Datasheet资料

2A SINGLE CHANNEL CURRENT-LIMITED POWERSWITCH• Single USB port power switches with auto-discharge • Short-circuit current and thermal protection • 2.45A accurate current limiting • Fast transient response time: 5μs • 90m Ω on-resistance • Reverse Current Blocking • Input voltage range: 2.7V – 5.5V • 0.6ms typical rise time • Very low shutdown current: 1μA (max) • Fault report (FLG) with blanking time (7ms typ) • ESD protection: 4KV HBM, 300V MM • Active low (AP2101) or active high (AP2111) enable • Ambient temperature range: -35°C to 85°C • SOP-8L and MSOP-8L-EP (Exposed Pad): Available in“Green” Molding Compound (No Br, Sb) • Lead Free Finish / RoHS Compliant (Note 1) • UL Recognized, File Number E322375 • IEC60950-1 CB Scheme CertifiedThe AP2101 and AP2111 are integrated high-side power switchesoptimized for Universal Serial Bus (USB) and other hot-swap applications. The family of devices complies with USB 2.0 and available with both polarities of Enable input. They offer current and thermal limiting and short circuit protection as well as controlled rise time, under-voltage lockout and auto-discharge functionalities. A 7ms deglitch capability on the open-drain Flag output prevents false over-current reporting and does not require any external components.All devices are available in SOP-8L and MSOP-8L-EP packages.• Consumer electronics – LCD TV & Monitor, Game Machines • Communications – Set-Top-Box, GPS, Smartphone•Computing – Laptop, Desktop, Servers, Printers, Docking Station, HUBPower Supply 2.7V to 5.5VAP2111 Enable Active HighAvailable Options Part NumberChannelEnable pin (EN)Current limit(typical)Recommended maximum continuous load current AP2101 1 Active Low 2.45A 2.0A AP2111 1 Active High 2.45A 2.0AFeaturesDescriptionApplicationsTypical Application Circuit2A SINGLE CHANNEL CURRENT-LIMITED POWERSWITCHAP 21 X 1 XX G - X0 : Active Low1 : Active HighG : Green13 : Tape & Reel1 : 1 ChannelChannel GreenPackageEnable PackingS : SOP-8LMP : MSOP-8L-EPDevicePackageCodePackaging(Note 2)13” Tape and ReelQuantityPart Number SuffixAP21X1SG-13 S SOP-8L2500/Tape&Reel -13 AP21X1MPG-13 MP MSOP-8L-EP2500/Tape&Reel -13 Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at/products/lead_free.html2. Pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at/datasheets/ap02001.pdf.SOP-8L( Top View )NCOUTFLGOUTGNDENININMSOP-8L-EPNCOUTFLGOUTGNDENININ( Top View )Pin Name Pin Number DescriptionsGND 1GroundIN2, 3 Voltage input pin (all IN pins must be tied together externally)EN 4 Enable input, active low (AP2101) or active high (AP2111)FLG 5Over-current and over-temperature fault report; open-drain flag is active low whentriggeredOUT6, 7 Voltage output pin (all OUT pins must be tied together externally)NC8 No internal connection; recommend tie to OUT pinsOrdering InformationPin AssignmentPin Descriptions2A SINGLE CHANNEL CURRENT-LIMITED POWERSWITCHFunctional Block DiagramFLGOUTGNDINENAbsolute Maximum RatingsSymbol Parameter RatingsUnits ESD HBM Human Body Model ESD Protection 4 KV ESD MM Machine Model ESD Protection 300VV IN Input Voltage 6.5 V V OUT Output Voltage V IN + 0.3 V V EN , V FLG Enable Voltage 6.5 V I load Maximum Continuous Load Current Internal LimitedAT Jmax Maximum Junction Temperature 150 °C T ST Storage Temperature Range (Note 3)-65 to 150°CNotes: 3. UL Recognized Rating from -30°C to 70°C (Diodes qualified T ST from -65°C to 150°C)Recommended Operating ConditionsSymbol ParameterMin Max Units V IN Input voltage 2.7 5.5 V I OUT Output Current0 2.0 A T A Operating Ambient Temperature -35 85 °C2A SINGLE CHANNEL CURRENT-LIMITED POWERSWITCHElectrical Characteristics(T A = 25°C, V IN= +5.0V, unless otherwise stated) Symbol Parameter Test Conditions (Note 4) Min Typ. Max Unit V UVLO Input UVLOR load =1k Ω 1.6 1.9 2.5 V I SHDNInput Shutdown Current Disabled, I OUT = 0 0.5 1 μA I Q Input Quiescent Current Enabled, I OUT = 0 45 70 μAI LEAK Input Leakage Current Disabled, OUT grounded1μAI REVReverse Leakage CurrentDisabled, V IN = 0V, V OUT = 5V, I REV at V IN 0.05 μA R DS(ON) Switch on-resistanceV IN = 5V, I OUT = 1.5A T A = 25°C MSOP8-EP 90 115m Ω SOP-8L95 115-40°C ≤ T A ≤ 85°C 140V IN = 3.3V, I OUT = 1.5A T A = 25°C 115 140-40°C ≤ T A ≤ 85°C170 I LIMIT Over-Load Current LimitV IN = 5V, V OUT = 4.5V, C L =120μF2.1 2.45 2.8 A I TrigCurrent limiting triggerthresholdOutput Current Slew rate (<100A/s) , C L =100μF2.5 A I SHORT Short-Circuit Current Limit Enabled into short circuit, C L =100μF 2.5 AT SHORT Short-circuit Response Time V OUT = 0V to I OUT = I LIMIT (short applied to output) 5 μs V IL EN Input Logic Low Voltage V IN = 2.7V to 5.5V 0.8 V V IH EN Input Logic High Voltage V IN = 2.7V to 5.5V 2 V I SINK EN Input leakage V EN = 5V 1 μA T D(ON) Output turn-on delay time C L =1μF, R load =10Ω 50 μs T R Output turn-on rise time C L =1μF, R load =10Ω 0.6 1.5 ms T D(OFF) Output turn-off delay timeC L =1μF, R load =10Ω 4 μs T F Output turn-off fall timeC L =1μF, R load =10Ω0.03 0.1 ms R FLG FLG output FET on-resistance I FLG =10mA, C L =100μF20 40 ΩT Blank FLG blanking time C IN =10μF, C L =100μF4 7 15 ms R DIS Discharge resistance (Note 5) V IN = 5V, disabled, I OUT = 1mA 290 ΩT SHDN Thermal Shutdown Threshold Enabled, R load =1k Ω 140 °C T HYSThermal Shutdown Hysteresis25 °C θJAThermal Resistance Junction-to-AmbientSOP-8L (Note 6) 110 °C/W MSOP-8L-EP (Note 7)60°C/WNotes: 4. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. 5. The discharge function is active when the device is disabled (when enable is de-asserted). The discharge function offers a resistive discharge path for the external storage capacitor. This is suitable only to discharge filter capacitors for limited time and cannot dissipate steady state currents greater than 8mA. 6. Test condition for SOP-8L: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout. 7. Test condition for MSOP-8L-EP: Device mounted on 2” x 2” FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground plane.2A SINGLE CHANNEL CURRENT-LIMITED POWERSWITCHTypical Performance CharacteristicsV ENV OUTV ENV OUTFigure 1. Voltage Waveforms: AP2101 (left), AP2111 (right)All Enable Plots are for AP2111 Active HighTurn-On Delay and Rise Time400us/divTurn-Off Delay and Fall Time400us/divTurn-On Delay and Rise Time400us/divTurn-Off Delay and Fall Time400us/divVout 2V/divVen 5V/div C L =1uF T A =25°C R L =5ΩVout 2V/divVen 5V/divC L =1uF T A =25°C R L =5ΩVout 2V/divVen 5V/div C L =100uF T A =25°C R L =5ΩVout 2V/divVen 5V/divC L =100uF T A =25°C R L =5Ω2A SINGLE CHANNEL CURRENT-LIMITED POWERSWITCHTypical Performance Characteristics (Continued)Short Circuit Current, Device Enabled Into Short500us/divInrush Current1ms/div0.6 Ω Load Connected to Enabled Device2ms/divShort Circuit with Blanking Time and Recovery50ms/divPower On1ms/divPower Off10ms/divIout 1A/divVflag 5V/divV IN =5V T A =25°CC L =100uFT A =25°C C L =100uF R L =2.5ΩIout 2A/divVout 5V/divVout 5V/divVflag 5V/divV IN =5VT A =25°C C L =100uFVflag 5V/divIout 1A/div Vin 5V/div Iout500mA/divVen 5V/divV IN =5V T A =25°C C L =100uFIout500mA/divVen 5V/divV IN =5V T A =25°C R L =2.5ΩC L =470uFC L =220uFC L =100uFVflag 5V/divIout 1A/divVin 5V/div Vout 5V/divT A =25°C C L =100uF R L =2.5Ω2A SINGLE CHANNEL CURRENT-LIMITED POWERSWITCHTypical Performance Characteristics (Continued)Device Enabled1ms/divDevice Disabled1ms/divUVLO Increasing1ms/divUVLO Decreasing10ms/divVflag 5V/divIout 1A/divVen 5V/divVout 5V/divVflag 5V/divIout 1A/divVen 5V/div Vout 5V/divIout500mA/divT A =25°C C L =100uFR L =2.5ΩVin 2V/divIout500mA/divT A =25°C C L =100uF R L =2.5ΩVin 2V/divV IN =5VT A =25°C C L =100uF R L =2.5ΩV IN =5V T A =25°C C L =100uF R L =2.5Ω2A SINGLE CHANNEL CURRENT-LIMITED POWERSWITCHTypical Performance Characteristics (Continued)2A SINGLE CHANNEL CURRENT-LIMITED POWERSWITCHTypical Performance Characteristics (Continued)SWITCHApplication NotePower Supply ConsiderationsA 0.1-μF to 1-μF X7R or X5R ceramic bypass capacitor between IN and GND, close to the device, is recommended. Placing a high-value electrolytic capacitor on the input (10-μF minimum) and output pin(s) is recommended when the output load is heavy. This precaution reduces power-supply transients that may cause ringing on the input. Additionally, bypassing the output with a 0.01-μF to 0.1-μF ceramic capacitor improves the immunity of the device to short-circuit transients.Over-current and Short Circuit ProtectionAn internal sensing FET is employed to check for over-current conditions. Unlike current-sense resistors, sense FETs do not increase the series resistance of the current path. When an overcurrent condition is detected, the device maintains a constant output current and reduces the output voltage accordingly. Complete shutdown occurs only if the fault stays long enough to activate thermal limiting.Three possible overload conditions can occur. In the first condition, the output has been shorted to GND before the device is enabled or before V IN has been applied. The AP2101/AP2111 senses the short circuit and immediately clamps output current to a certain safe level namely I LIMIT.In the second condition, an output short or an overload occurs while the device is enabled. At the instance the overload occurs, higher current may flow for a very short period of time before the current limit function can react. After the current limit function has tripped (reached the over-current trip threshold), the device switches into current limiting mode and the current is clamped at I LIMIT.In the third condition, the load has been gradually increased beyond the recommended operating current. The current is permitted to rise until the current-limit threshold (I TRIG) is reached or until the thermal limit of the device is exceeded. The AP2101/AP2111 is capable of delivering current up to the current-limit threshold without damaging the device. Once the threshold has been reached, the device switches into its current limiting mode and is set at I LIMIT.To protect against short circuit to GND at extremely low temperature (< -30o C), a minimum 120-μF electrolytic capacitor on the output pin is recommended. A correct capacitor type with capacitor voltage rating and temperature characteristics must be properly chosen so that capacitance value does not drop too low at the extremely low temperature operation. A recommended capacitor should have temperature characteristics of less than 10% variation of capacitance change when operated at extremely low temp. Our recommended aluminum electrolytic capacitor type is Panasonic FC series.At low input voltage condition (V IN < 3V), the short circuit protection current may rise as high as twice the typical value.FLG ResponseWhen an over-current or over-temperature shutdown condition is encountered, the FLG open-drain output goes active low after a nominal 7-ms deglitch timeout. The FLG output remains low until both over-current and over-temperature conditions are removed. Connecting a heavy capacitive load to the output of the device can cause a momentary over-current condition, which does not trigger the FLG due to the 7-ms deglitch timeout. The AP2101/AP2111 is designed to eliminate false over-current reporting without the need of external components to remove unwanted pulses.Power Dissipation and Junction TemperatureThe low on-resistance of the internal MOSFET allows the small surface-mount packages to pass large current. Using the maximum operating ambient temperature (T A) and R DS(ON), the power dissipation can be calculated by:P D = R DS(ON)× I2分销商库存信息:DIODESAP2111SG-13AP2101MPG-13AP2101SG-13 AP2111MPG-13。

年最佳超薄本CPU排行榜

年最佳超薄本CPU排行榜

年最佳超薄本CPU排行榜随着科技的不断发展，越来越多的人开始转向超薄本电脑。

尤其是在疫情期间，远程办公和在线学习需求的增加使得超薄本电脑更加受欢迎。

然而对于大多数人来说，超薄本电脑的处理器(CPU)是一个非常重要的考虑因素。

因此，本文将列出2021年最佳超薄本CPU排行榜，以帮助您选择最适合您需求的超薄本电脑。

1. 英特尔酷睿 i7-1165G7i7-1165G7是英特尔第11代酷睿处理器中最受欢迎的一款。

它是一款采用10nm工艺打造的4核8线程处理器，具有2.8GHz的基础时钟频率，最大睿频可达4.7GHz。

与上一代CPU相比，i7-1165G7在性能和功耗上都有显著提升，使得它成为目前超薄本市场上的首选。

2. 英特尔酷睿 i5-1135G7i5-1135G7也是英特尔第11代酷睿处理器的一款产品。

它是一款采用10nm工艺打造的4核8线程处理器，具有2.4GHz的基础时钟频率，最大睿频可达4.2GHz。

与i7-1165G7相比，i5-1135G7在性能方面略逊一筹，但它的价格更低，因此对于对性能要求不是特别高的用户来说，它是一款非常不错的选择。

3. 英特尔酷睿 i7-10510Ui7-10510U是英特尔第十代酷睿处理器中非常出色的一款。

它是一款采用14nm工艺打造的4核8线程处理器，具有1.8GHz的基础时钟频率，最大睿频可达4.9GHz。

虽然与第11代处理器相比稍微有些落后，但i7-10510U仍然具有出色的性能和功率表现。

4. AMD Ryzen 7 4700URyzen 7 4700U是AMD的一款7nm处理器，它是一款采用8核8线程设计的处理器，具有2.0GHz的基础时钟频率，最大睿频可达4.1GHz。

在性能方面，Ryzen 7 4700U可以与i7-10510U相提并论，但它拥有更低的价格和更低的功耗，因此更受一些价格敏感的用户欢迎。

5. 英特尔酷睿 i5-10210Ui5-10210U是英特尔第十代酷睿处理器中一款受欢迎的低功耗处理器。