IF(AV)Rectangular160AwaveformVRRMrange60, 80 to 100VIFSM@ tp = 5 µs sine9000AVF@ 80 Apk, TJ = 125°C0.80V(per leg)T
Jrange- 55 to 175°CCharacteristics163CMQ...UnitsMajor Ratings and CharacteristicsThe 163CMQ isolated center tap Schottky rectifier moduleseries has been optimized for low reverse leakage at hightemperature. The proprietary barrier technology allows forreliable operation up to 175° C junction temperature. Typicalapplications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.175 °C TJ operationIsolated heatsinkCenter tap moduleHigh purity, high temperature epoxy encapsulation forenhanced mechanical strength and moisture resistanceLow forward voltage dropHigh frequency operationGuard ring for enhanced ruggedness and long termreliabilityLow profile, high current packageDescription/ FeaturesSCHOTTKY RECTIFIER160 Amp163CMQ... SERIES
AEC - Q100-011 Rev-B
July 18, 2003
Component Technical CommitteeAutomotive Electronics Council
ATTACHMENT 11
AEC - Q100-011 Rev-B
CHARGED DEVICE MODEL (CDM)
ELECTROSTATIC DISCHARGE TEST
AEC - Q100-011 Rev-B
July 18, 2003
Component Technical CommitteeAutomotive Electronics Council
Acknowledgment Any document involving a complex technology brings together experience and skills from many sources. The Automotive Electronics Counsel would especially like to recognize the following significant contributors to the development of this document: Mark A. Kelly Delphi Delco Electronics Systems
AEC - Q100-011 Rev-B
July 18, 2003
Component Technical CommitteeAutomotive Electronics Council
Change Notification The following summary details the changes incorporated into AEC-Q100-011 Rev-B: • Section 3.6, steps j and k: Added wording to allow lower voltage level stressing (125 volt) for devices failing the 250 volt level. • Section 5, Acceptance Criteria: Added wording to reflect device classification, rather than meeting a 500 volt level. • Table 4, Integrated Circuit CDM ESD Classification Levels: Added new table listing classification levels for CDM ESD.
AEC - Q100 - Rev-G
May 14, 2007
FAILURE MECHANISM BASED
STRESS TEST QUALIFICATION
FOR
INTEGRATED CIRCUITS
Component Technical Committee
Automotive Electronics Council
AEC - Q100 - REV-G
May 14, 2007
Component Technical CommitteeAutomotive Electronics Council
TABLE OF CONTENTS
AEC-Q100 Failure Mechanism Based Stress Test Qualification for Integrated Circuits
Appendix 1: Definition of a Qualification Family
Appendix 2: Q100 Certification of Design, Construction and Qualification
Appendix 3: Plastic Package Opening for Wire Bond Testing
Appendix 4: Minimum Requirements for Qualification Plans and Results
Appendix 5: Part Design Criteria to Determine Need for EMC Testing
Appendix 6: Part Design Criteria to Determine Need for SER Testing
Attachments
AEC-Q100-001: WIRE BOND SHEAR TEST
AEC-Q100-002: HUMAN BODY MODEL (HBM) ELECTROSTATIC DISCHARGE (ESD) TEST
10k热敏电阻b值
在我们生活和工作中，热敏电阻是一种常见的新型传感器，尤其是10k热敏电阻，由于其优异的性能，被广泛应用于各种电子设备中。本文将从以下几个方面介绍10k热敏电阻的相关知识，包括基本概念、B值作用、计算与测量、应用领域以及选购与使用注意事项。
一、10k热敏电阻的基本概念
10k热敏电阻指的是电阻值在10kΩ（欧姆）的热敏电阻器。热敏电阻器是一种半导体材料，其电阻值随温度的变化而变化。10k热敏电阻在常温下的电阻值约为10kΩ，当温度升高时，电阻值会逐渐降低。
二、10k热敏电阻B值的作用
10k热敏电阻的B值，又称热敏系数，是描述热敏电阻随温度变化程度的参数。B值越大，热敏电阻随温度变化的程度越大。在实际应用中，B值用于计算热敏电阻在不同温度下的电阻值，从而实现对温度的测量和控制。
三、10k热敏电阻B值的计算与测量
10k热敏电阻的B值可以通过实验测量得到。测量方法通常是将热敏电阻放入一个恒温环境中，记录不同温度下的电阻值，然后通过曲线拟合得到B值。计算公式为：B = (R2 - R1) / (T2 - T1)，其中R1、R2分别为热敏电阻在两个不同温度下的电阻值，T1、T2分别为对应的温度。
四、10k热敏电阻的应用领域
10k热敏电阻凭借其优异的性能，在众多领域都有广泛的应用。如家电产品中的温度控制、工业生产过程中的温度监测、医疗设备中的体温测量等。此外，10k热敏电阻还具有良好的抗干扰性能，能在恶劣环境中稳定工作。
五、选购与使用10k热敏电阻的注意事项
1.在选购10k热敏电阻时，应关注产品的品质、稳定性、响应速度等方面。
2.使用10k热敏电阻时，要确保其工作环境温度在允许范围内，避免过温导致性能下降。
3.在安装10k热敏电阻时，要确保接触良好，避免电阻值变化影响测量结果。
4.定期检查10k热敏电阻的性能，如发现异常，及时更换以确保设备正常运行。
总之，10k热敏电阻作为一种重要的温度传感器，在各个领域都有广泛的应用。了解其基本概念、B值作用以及应用领域等方面的知识，有助于我们更好地选购、使用和维护这种传感器。
