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DTD143EL-AE3-6-R中文资料

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UNISONIC TECHNOLOGIES CO., LTD
DTD143E NPN EPITAXIAL SILICON TRANSISTOR
DIGITAL TRANSISTORS
(BUILT- IN RESISTORS)
FEATURES
* Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
* The bias resistors consist of thin film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. * Only the on / off conditions need to be set for operation, making device design easy.
EQUIVALENT CIRCUIT
OUT
GND
OUT IN
IN
*Pb-free plating product number:DTD143EL
ORDERING INFORMATION
Order Number
Pin Assignment
Normal Lead Free Plating Package 1 2 3 Packing
DTD143E-AE3-6-R DTD143EL-AE3-6-R SOT-23 G I O Tape
Reel DTD143E-AL3-6-R DTD143EL-AL3-6-R SOT-323 G I O Tape Reel
MARKING
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER SYMBOL RATINGS
UNIT Supply Voltage V CC 50 V
Input Voltage V IN-10 ~ +30 V
Output Current I OUT 500 mA
Power Dissipation P D 200 mW Junction Temperature T J +150 °C Storage Temperature T STG-55 ~ +150 °C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS (Ta=25°C)
PARAMETER SYMBOL TEST
CONDITIONS MIN
TYP
MAX UNIT
V IN(OFF)V CC =5V, I OUT =100µA
0.5
Input Voltage
V IN(ON)V OUT =0.3V, I OUT
=20mA 3
V
Output Voltage V OUT(ON)I OUT/I IN =50mA/2.5mA 0.1 0.3 V
Input Current I IN V IN =5V
1.8
mA
Output Current I OUT(OFF)V CC =50V, V IN =0V 0.5 µA DC Current Gain G IN V OUT =5V, I OUT =50mA 47
Input Resistance R1 3.29 4.7 6.11KΩResistance Ratio R2/R10.8 1 1.2 Transition Frequency f T V CE =10V, I E =−50mA, f=100MHz * 200 MHz * Transition frequency of the device
TYPICAL CHARACTERISTIC
Output Current, I OUT (A)Input Voltage vs. Output Current
(ON Characteristics)
I n p u t V o l t a g e , V I N (O N ) (V )
0.5
1.0
1.5
2.0
2.5
3.0
Input Voltage , V I(OFF) (V)Output Current vs. Input Voltage
(OFF Characteristics)
1K 500500μ1m 2m
5m 10m20m 50m100m200m500m Output Current, I OUT (A)
20010050201052
1
D C C u r r e n t G a i n , G I
DC Current Gain vs. Output Current
1500m
500μ1m 2m
5m 10m 20m 50m100m200m500m
Output Current, I OUT (A)
200m 100m 50m 20m 10m 5m 2m
1m
O u t p u t V o l t a g e , V O U T (O N ) (V )
Output Voltage vs. Output Current。

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LM143中文资料

LM143中文资料


Electrical Characteristics (Note 3)
Parameter Input Offset Voltage Input Offset Current Input Bias Current Supply Voltage Rejection Ratio Output Voltage Swing Large Signal Voltage Gain Common-Mode Rejection Ratio Input Voltage Range Supply Current (Note 5) Short Circuit Current Slew Rate Power Bandwidth Unity Gain Frequency Input Offset Voltage Input Offset Current Input Bias Current Large Signal Voltage Gain Output Voltage Swing Conditions Min TA e 25 C TA e 25 C TA e 25 C TA e 25 C TA e 25 C RL t 5 kX TA e 25 C VOUT e g 10V RL t 100 kX TA e 25 C TA e 25 C TA e 25 C TA e 25 C TA e 25 C AV e 1 TA e 25 C VOUT e 40 Vp-p RL e 5 kX THD s 1% TA e 25 C TA e Max TA e Min TA e Max TA e Min TA e Max TA e Min RL t 100 kX TA e Max RL t 100 kX TA e Min RL t 5 0 kX TA e Max RL t 5 0 kX TA e Min 50k 50k 22 22 08 18 50 16 150k 220k 26 25 22 100k 80
静电保护器SOT-143封装参数型号规格书大全

静电保护器SOT-143封装参数型号规格书大全


Revision January 06, 2014
1/3
Transient Voltage Suppressors Array for ESD Protection
ESD05V14T-LC
Low Capacitance
Electrical Characteristics (@ 25℃ Unless Otherwise Specified )
θ
0°
-
8° 0° - 8°
aaa
0.006
0.15
bbb
0.008
0.20
ccc
0.004
0.10
Soldering Footprint
Symbol C E1 E2 G X1 X2 Y Z
Inches (0.087) 0.076 0.068 0.031 0.039 0.047 0.055 0.141
t - Time (μs)
Fig3. Power Derating Curve
% of Rated Power
110 100
90 80 70
60 50 40 30 20
10 0 0
25
50
75 100 125 150
Ambient Temperature – TA (ºC)
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
Millimeters (2.20) 1.92 1.72 0.80 1.00 1.20 1.40 3.60
Revision January 06, 2014
3/3
100% 90%
Percent of Peak Pulse Current %
XP143 Specification-Chinese

XP143 Specification-Chinese


种类 Side
Side
Side
Side
Side
Side
121212121212
供料平台
MFU-X10E 固定
○○○
○○○
○○○
废料带切刀
○○○
○○○Leabharlann 废料带BOX○○○
○○○
LCD触摸屏
○○○
○○○
○○○
对应AA模式
△
吸嘴自动更换器
△
△
△
△
△
△
对应BGA，CSP
△
△
△
真空支撑销
△
△
△
△
△
△
软件版本更新
IEC规格※4，UL规格，CE标记
※1．电源：可以选择200,210,220,230,380,400,415,460,480V （变压器组的插座切换方式） 为了避开杂讯、电压波动、高频失真等的影响，避免与其他机器共用，推荐使用专用的电源。
※2．气源应该在大气压露点:－17℃ 以下、微粉尘:粒径5μm以下、油的最高浓度:5mg/m3以下。 ※3．湿度是保持不结露。此外，本公司推介的环境条件是，温度15℃～30℃以及湿度50%～70%。 ※4．IP22：对应IEC规格（对于人体、固体杂物以及水的浸入的保护）
-3-
XP143-020505RS
1. 概 要
1.2.4 丰富的吸嘴配置
１） 小芯片专用的吸嘴配置例 在吸嘴尺寸φ0.37～φ2.5mm的配置上，可以吸取12个4532尺寸以内的元件 进行贴装。
φ0 .7 φ1 .0 φ1 .3 φ1 .8 φ2 .5
２） 贴装小芯片／中型元件的吸嘴配置例
吸取８个4532以内的元件贴装，贴装小芯片后，吸取4个超过4532 □10mm以内的元件进行贴装。
DTA123E-AE3-6-R中文资料

DTA123E-AE3-6-R中文资料

UNISONIC TECHNOLOGIES CO., LTDDTA123E PNP EPITAXIAL SILICON TRANSISTORDIGITAL TRANSISTORS(BUILT- IN BIAS RESISTORS)FEATURES* Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow positive input.EQUIVALENT CIRCUITOUTGNDOUTININ*Pb-free plating product number:DTA123ELORDERING INFORMATIONOrder NumberPin AssignmentNormal Lead Free Plating Package 1 2 3 PackingDTA123E-AE3-6-R DTA123EL-AE3-6-R SOT-23 G I O TapeReel DTA123E-AL3-6-R DTA123EL-AL3-6-R SOT-323 G I O Tape Reel DTA123E-AN3-6-R DTA123EL-AN3-6-R SOT-523 G I O Tape ReelMARKINGABSOLUTE MAXIMUM RATINGS (Ta=25°C)PARAMETER SYMBOL RATINGS UNITSupply Voltage V CC -50 V Input Voltage V IN -12 ~ +10 V Output Current I OUT -100 mASOT-523 150 mWPower Dissipation SOT-23/SOT-323P D200 mWJunction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL SPECIFICATIONS (Ta=25°C)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITV IN(OFF) V CC =-5V, I OUT =-100µA -0.5Input Voltage V IN(ON) V OUT =-0.3V, I OUT =-20mA -3VOutput Voltage V OUT(ON) I OUT /I IN =10mA/-0.5mA -0.1 -0.3V Input Current I IN V IN =-5V -3.8mA Output Current I OUT(OFF) V CC =-50V, V IN =0V -0.5µA DC Current Gain G IN V OUT =-5V, I OUT =-20mA 20Input Resistance R 1 1.54 2.2 2.86K ΩResistance Ratio R 2/R 1 0.8 1 1.2 Transition Frequency f T V CE =-10V, I E =−5mA, f=100MHz * 250 MHz * Transition frequency of the deviceTYPICAL CHARACTERISTIC521Output Current, I OUT (A)Input Voltage vs. Output Current(ON Characteristics)I n p u t V o l t a g e , V I N (O N ) (V )Input Voltage , VI(OFF) (V)Output Current vs. Input Voltage(OFF Characteristics)1K 500-200μ-1mOutput Current, I OUT (A)200100502010521D C C u r r e n t G a i n , G IDC Current Gain vs. Output Current1500m Output Current, I OUT (A)200m100m 50m 20m 10m 5m 2m 1mO u t p u t V o l t a g e , V O U T (O N ) (V )Output Voltage vs. Output Current-100μ-200μ-1m-2m -5m -10m -20m -100m-500μ-50m。