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NT90TNLADDC3VI中文资料

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T V NO: 40A/240VAC 14VDC NC: 30A/240VAC 14VDC Insulation B-class F-class
CQC NO: 30A/240VAC NC: 20A/240VAC
Insulation
B-class F-class
Reference Data
12
Time(m s ec)
10 8 6 4
119
01
元器件交易网
NHG RELAYS
Coil Parameter
DC Coil Parameter Coil voltage V Rated 003-900 005-900 006-900 009-900 012-900 015-900 018-900 024-900 048-900 110-900 3 5 6 9 12 15 18 24 48 110 Max. 3.9 6.5 7.8 11.7 15.6 19.5 23.4 31.2 62.4 143 Pick up voltage VDC(max) (75% of rated voltage) 2.25 3.75 4.50 6.75 9.00 10.25 13.50 18.00 36.00 82.50 Release voltage VDC(min) (10% of rated voltage) 0.3 0.5 0.6 0.9 1.2 1.5 1.8 2.4 4.8 11.0
2.Pickup and release voltage are for test purposes only and are not to be used as design criteria.
Operation condition
Insulation Resistance Dielectric Strength Between contacts Between contact and coil Shock resistance Vibration resistance Terminals strength Solderability Ambient Temperature Relative Humidity Mass 1000M min (at 500VDC) Item 7 of IEC255-5 Item 6 of IEC255-5 Item 6 of IEC255-5 IEC68-2-27 T Ea est IEC68-2-6 Test Fc IEC68-2-21 Test Ua1&Ua2 IEC68-2-20 Test Ta method 1 IEC68-2-3 Test Ca 50Hz 1500V 50Hz 2500V 200m/s2 11ms 10~55Hz double amplitude 1.5mm 10N 235 2 3 0.5s -55~100 -55~125 85% (at 40 ) 31g Low profile type 35g
2.Pickup and release voltage are for test purposes only and are not to be used as design criteria.
Operation condition
Insulation Resistance Dielectric Strength Between contacts Between contact and coil Shock resistance Vibration resistance Terminals strength Solderability Ambient Temperature Relative Humidity Mass 1000M min (at 500VDC) Item 7 of IEC255-5 Item 6 of IEC255-5 Item 6 of IEC255-5 IEC68-2-27 T Ea est IEC68-2-6 Test Fc IEC68-2-21 Test Ua1&Ua2 IEC68-2-20 Test Ta method 1 IEC68-2-3 Test Ca 50Hz 1500V 50Hz 2500V 200m/s2 11ms 10~55Hz double amplitude 1.5mm 10N 235 2 3 0.5s -55~100 -55~125 85% (at 40 ) 31g Low profile type 35g
3 5 6 9 12 15 18 24 48 110
3.9 6.5 7.8 11.7 15.6 19.5 23.4 31.2 62.4 143
15 42 60 135 240 375 540 960 3840 20167
2.25 3.75 4.50 6.75 9.00 10.25 13.50 18.00 36.00 82.50
Wiring diagram(Bottom view) NOTES 1).Dimensions are in millimeters. 2).Inch equivalents are given for general information only.
Mounting (Bottom view)
Reference Data
0.3 0.5 0.6 0.9 1.2 1.5 1.8 2.4 4.8 11.0
0.6
15
10
CAUTION: 1.The use of any coil voltage less than the rated coil voltage will compromise the operation of the relay.
Dash numbers
Coil resistance 10%
Coil power W
Operate Time ms
Release Time ms
10 28 40 90 160 250 360 640 2560 13445
0.9
15
10
003-600 005-600 006-600 009-600 012-600 015-600 018-600 024-600 048-600 110-600
Qualification inspection:
Perform the qualification test as specified in the table of IEC255-19-1 and minimum sample size 24.
121
元器件交易网
NHG RELAYS
Dash numbers
Coil resistance 10%
Coil power W
Operate Time ms
Release Time ms
10 28 40 90 160 250 360 640 2560 13445
0.9
15
10
003-600 005-600 006-600 009-600 012-600 015-600 018-600 024-600 048-600 110-600
Qualification inspection:
Perform the qualification test as specified in the table of IEC255-19-1 and minimum sample size 24.
元器件交易网
Coil Parameter
DC Coil Parameter Coil voltage V Rated 003-900 005-900 006-900 009-900 012-900 015-900 018-900 024-900 048-900 110-900 3 5 6 9 12 15 18 24 48 110 Max. 3.9 6.5 7.8 11.7 15.6 19.5 23.4 31.2 62.4 143 Pick up voltage VDC(max) (75% of rated voltage) 2.25 3.75 4.50 6.75 9.00 10.25 13.50 18.00 36.00 82.50 Release voltage VDC(min) (10% of rated voltage) 0.3 0.5 0.6 0.9 1.2 1.5 1.8 2.4 4.8 11.0
Dimensions
0.130 0.020 (0.146) 0.787max.
mm /inch
0.020
20max.
24.2max. 0.953max.
3.3 0.130
17max. 0.669max.
0.031 0.059 0.027 0.027 0.047 0.047
0.492
2.4 0.094 0.209
27.6max. 1.087max.
0.882
0.787
Open type
0.724 1.279max.
Dimensions
0.150 0.150 0.606 0.303 0.303 0.551 0.350 0.606 0.303 0.303
0.551
0.701
0.043
0.043
0.1
0.606
0.1
0.3 0.5 0.6 0.9 1.2 1.5 1.8 2.4 4.8 11.0
0.6
15
10
CAUTION: 1.The use of any coil voltage less than the rated coil voltage will compromise the operation of the relay.
元器件交易网
Présente / Presents:
元器件交易网
NHG RELAYS
Safety approvals
Safety approval Load UL&CUR NO:40A/240VAC 30A/277VAC NC:30A/240VAC 20A/277VAC 2 HP 250VAC TV-5 1 1 HP 250VAC 2 HP:A 1HP/16AFLA/120VAC 2HP/12AFLA/240VAC B 30LRA/10AFLA/120VAC 30LRA/10AFLA/240VAC Insulation B-class F-class T V NO:40A/240VAC 14VDC NC:30A/240VAC 14VDC Insulation B-class F-class CQC NO:30A/240VAC NC:20A/240VAC

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9N90中文资料

9N90中文资料

UNISONIC TECHNOLOGIES CO., LTD9N90 Power MOSFET900V N-CHANNEL MOSFETDESCRIPTIONThe UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.FEATURES* R DS(ON) = 1.4Ω @V GS = 10 V* Ultra low gate charge ( typical 45 nC )* Low reverse transfer capacitance ( C RSS = typical 14 pF ) * Fast switching capability * Avalanche energy specified* Improved dv/dt capability, high ruggednessSYMBOL1.Gate*Pb-free plating product number: 9N90LORDERING INFORMATIONOrdering Number Pin AssignmentNormal Lead Free Plating Package 1 2 3Packing9N90-T3P-T 9N90L-T3P-T TO-3P G D STubeABSOLUTE MAXIMUM RATING (T C =25℃, unless otherwise specified)PARAMETER SYMBOL RATINGS UNITDrain-Source Voltage V DSS 900 V Gate-Source Voltage V GSS ±30 VContinuous Drain Current(T C = 25℃) I D 9.0 A Pulsed Drain Current (Note 1) I DM 36 A Avalanche Current (Note 1) I AR 9.0 ASingle Pulsed(Note 2)E AS 900Avalanche Energy Repetitive(Note 1) E AR 28mJPeak Diode Recovery dv/dt (Note 3) dv/dt 4.0 V/ns 280 WPower Dissipation Derate above 25℃ P D2.22 W/℃ Junction Temperature T J 125 ℃ Operating Temperature T OPR -20 ~ +85 ℃ Storage Temperature T STG -40 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.THERMAL CHARACTERISTICSPARAMETER SYMBOL MIN TYP MAX UNITJunction-to- Ambient θJA 40 ℃/W Junction-to-Case θJC 0.45 ℃/WELECTRICAL CHARACTERISTICS (T J =25℃, unless otherwise specified)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICSDrain-Source Breakdown Voltage BV DSS V GS = 0 V, I D = 250 μA 900 V Drain-Source Leakage Current I DSS V DS = 900 V, V GS = 0 V 10 μAForward I GSSF V GS = 30 V, V DS = 0 V 100Gate-Body Leakage CurrentReverse I GSSRV GS = -30 V, V DS = 0 V -100nA Breakdown Voltage TemperatureCoefficientBV △DSS /△T J I D = 250 μA, Referenced to 25℃ 0.99 V/℃ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = V GS , I D = 250 μA 3.0 5.0V Static Drain-Source On-Resistance R DS(ON) V GS = 10 V, I D = 4.5 A 1.12 1.4Ω DYNAMIC PARAMETERS Input Capacitance C ISS 2100 2730pFOutput Capacitance C OSS 175 230pFReverse Transfer Capacitance C RSSV DS = 25 V, V GS = 0 V,f = 1.0 MHz14 18 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 50 110nsTurn-On Rise Time t R 120 250ns Turn-Off Delay Time t D(OFF) 100 210nsTurn-Off Fall Time t F V DD = 4500V, I D =11.0 A, R G = 25Ω (Note 4, 5) 75 160ns Total Gate Charge Q G 45 58 nCGate-Source Charge Q GS 13 nCGate-Drain Charge Q GDV DS = 720V, I D = 11.0A,V GS = 10 V (Note 4, 5)18 nCELECTRICAL CHARACTERISTICS(Cont.)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITDRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD V GS = 0 V, I S = 9.0 A 1.4VMaximum Continuous Drain-SourceDiode Forward CurrentI S 9.0 AMaximum Pulsed Drain-Source DiodeForward CurrentI SM 36 AReverse Recovery Time t RR 550 ns Reverse Recovery Charge Q RR V GS = 0 V, I S = 9.0 A,d IF / dt = 100 A/μs (Note 4) 6.5 μCNote 1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 21mH, I AS = 9.0A, V DD = 50V, R G = 25 Ω, Starting T J = 25℃3. I SD ≤ 9.0A, di/dt ≤ 200A/μs, V DD ≤ BV DSS , Starting T J = 25℃4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%5. Essentially independent of operating temperatureTEST CIRCUITFig. 2A Switching Test Circuit Fig. 2B Switching WaveformsFig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge WaveformFig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching WaveformsTEST CIRCUIT(Cont.)TYPICAL CHARACTERISTICSTYPICAL CHARACTERISTICS(Cont.)D r a i n -S o u r c e B r e a k d o w n V o l t a g e , B V D S S (N o r m a l i z e d )D r a i n -S o u r c e O n -R e s i s t a n c e , R D S (O N ) (N o r m a l i z e d )D r a i n C u r r e n t , I D (A )D r a i n C u r r e n t , I D (A )。

贴片晶体管参数代码查询uvwxyz

贴片晶体管参数代码查询uvwxyz

WCs
BCR133T
Sie
N
SC75
npn dig 50V 0.1A 10k+10k
WCs
BCR133U
Sie
N
SOT457
npn dig 50V 0.1A 10k+10k
WCs
BCR133W
Sie
N
SOT323
npn dig 50V 0.1A 10k+10k
WCs
BCR133S
Sie
DN
SOT363
参数及代换型号
W0F
TSDF1205RW
Tfk
WQ
SOT343
12GHz npn 5mA 4V
W1s
BFT92
Sie
N
SOT23
BFQ51/BFQ76
W1s
BCR10PN
Sie
DP
SOT363
pnp/npn dig 0.1A 10k+10k
W2
TSDF1220RW
Tfk
WQ
SOT343
12GHz npn 6V 20mA
dg RF mosfet
U1E
3SK254E
Nec
UQ
SOT343
dg RF mosfet
U1G
3SK253G
Nec
UQ
SOT143
dg RF mosfet
U1G
3SK255G
Nec
UQ
SOT343
dg RF mosfet
U2
BCX20
Phi
N
SOT23
BC338
U2t
BCX20
Phi
N
SOT23
FQA9N90中文资料

FQA9N90中文资料


Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
-55 to +150
300
Typ
Max
--
0.52
0.24
--
--
40
©2001 Fairchild Semiconductor Corporation
Units V A A A V mJ A mJ
V/ns W
W/°C °C °C
Units °C/W °C/W °C/W
Rev. A, March 2001
4000 3000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
C iss
C oss
2000
1000
Crss
※ Notes :
1. VGS = 0 V 2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V] DS
101
100 10-1
0.2
150℃
25℃
※ Notes : 1. V = 0V 2. 25G0Sμ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
2N3906中文资料(nte)中文数据手册「EasyDatasheet - 矽搜」

2N3906中文资料(nte)中文数据手册「EasyDatasheet - 矽搜」


VCE = 1V, I C = 1mA
40 − − 80 − −
2N3905 2N3906
VCE = 1V, I C = 10mA
50 − 150 100 − 300
2N3905 2N3906
VCE = 1V, I C = 50mA
30 − − 60 − −
2N3905 2N3906
VCE = 1V, I C = 100mA
芯片中文手册,看全文,戳
2N3905 & 2N3906 硅PNP晶体管
一般用途
TO92类型封装
绝对最大额定值：
集电极 - 发射极电压,V
CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
器件总功耗（T
C = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
减免上述255℃. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12MW / 5C
减免上述255℃. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0MW / 5C
器件总功耗（T