GT30J101中文资料
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0 0
20
40
60
80
0 100
Collector-emitter voltage VCE
(V)
Gate charge
QG
(nC)
Safe operating area
100 IC max (pulsed)* 50 IC max (continuous) 30 10 5 3 *: Single nonrepetitive pulse Tc = 25°C 0.5 Curves must be derated 0.3 1 linearly with increase in temperature. 3 10 30 100 300 1000 3000 DC operation 10 ms* 100 100 µs* 50 µs* 50 30
10
−4 10
−5
10
−4
10
−3
10
−2
10
−1
10
0
10
1
10
2
Pulse width
tw
(s)
5
2002-01-18
Gate-emitter voltage
300
300
12
Capacitance
VGE
(V)
3000
RL = 10 Ω 400 Tc = 25°C
GT30J101
RESTRICTIONS ON PRODUCT USE
Reverse bias SOA
(A)
(A)
IC
IC
1 ms*
10 5 3
Collector current
Collector current
1 0.5 0.3 Tj < = 125°C VGE = ±15 V RG = 43 Ω 0.1 1 3 10 30 100 300 1000 3000
0.1 1
Maximum Ratings (Ta = 25°C)
Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 ±20 30 60 155 150 −55~150 Unit V V A
10
Eon, Eoff – RG
10 Eon
Switching loss
Common emitter VCC = 300 V VGG = ±15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C Note2
Eon, Eoff – IC
(mJ)
3 Eoff 1
Eon, Eoff
GT30J101
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J101
High Power Switching Applications
Unit: mm • • • • The 3rd Generation Enhancement-Mode High Speed: tf = 0.30 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max)
16
12
8 60 30
8 20 4 IC = 10 A 30 60
4
20 IC = 10 A
0 0
4
8
12
16
20
0 0
4
8
12
16
20
Gate-emitter voltage
VGE
(V)
Gate-emitter voltage
VGE
(V)
IC – VGE
100 Common emitter VCE = 5 V 4 Common emitter VGE = 15 V 3
Eon, Eoff
(mJ)
3
Eon
1
0.3
Eoff
Switching loss
0.3
0.1
0.03 1
Common emitter VCC = 300 V VGG = ±15 V IC = 30 A : Tc = 25°C : Tc = 125°C Note2 3 10 30 100 300 1000
4
8
0 −60
−20
20
60
100
140
Gate-emitter voltage
VGE
(V)
Case temperature Tc
(°C)
3
2002-01-18
GT30J101
Switching time ton, tr – RG
3 10
Switching time ton, tr – IC
Common emitter VCC = 300 V VGG = ±15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C
(V)
Gate-emitter voltage
VGE
(V)
VCE – VGE
20 Common emitter Tc = 25°C 20 Common emitter Tc = 125°C
VCE – VGE
(V) Collector-emitter voltage VCE
16 12
(V) Collector-emitter voltage VCE
0.30 µs
0.81 °C/W
Note1: Switching time measurement circuit and input/output waveforms
VGE GT30J301 −VGE IC RG L VCC VCE 0 IC 90% VCE 10% td (off) tf toff ton 10% 10% td (on) tr 90% 10% 0
VCE (sat) – Tc
Collector-emitter saturation voltage VCE (sat) (V)
80
60 50 40 30
IC
60
Collector current
(A)
2
20 10
40
20 Tc = 125°C 0 0
25 −40 12 16 20
1
IC = 5 A
(µs)
1 0.5 0.3 tr Common emitter 0.1 0.05 0.03 3 VCC = 300 V VGG = ±15 V IC = 30 A : Tc = 25°C : Tc = 125°C 10 30 100 300 1000
(µs)
ton
3
ton, tr
ton, tr
1 0.5 0.3
Switching loss
0.1
0.03
0.01 0
5
10
15
20
25
30
Gate resistance RG
(Ω)
Collector current
IC
(A)
4
2002-01-18
GT30J101
C – VCE
10000 500 Common emitter
VCE, VGE – QG
20
(V)
Collector-emitter voltage VCE
(V)
Collector-emitter voltage VCE
(V)
10
2
Rth (t) – tw
Transient thermal impedance Rth (t) (°C/W)
10
1
10
0
10
−1 −2 −3 Tc = 25°C
10
10
Switching time toff, tf – IC
Common emitter VCC = 300 V VGG = ±15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C
(µs)
1 0.5 0.3
(µs)
toff
toff
toff, tf
toff, tf
tf
1 0.5 0.3
90% 10%
Note2: Switching loss measurement waveforms
VGE 0
90% 10%
IC
0
VCE
10%
Eoff
Eon
2
2002-01-18
GT30J101
IC – VCE
100 Common emitter Tc = 25°C 20 Common emitter Tc = −40°C
W °C °C
JEDEC JEITA TOSHIBA Weight: 4.6 g
― ― 2-16C1C
1
2002-01-18
GT30J101
Electrical Characteristics (Ta = 25°C)
Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Thermal resistance Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff Rth (j-c) Test Condition VGE = ±20 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 3 mA, VCE = 5 V IC = 30 A, VGE = 15 V VCE = 20 V, VGE = 0, f = 1 MHz Inductive Load VCC = 300 V, IC = 30 A VGG = ±15 V, RG = 43 Ω (Note1) Min 5.0 Typ. 2.1 2200 0.12 0.40 0.15 0.70 Max ±500 1.0 8.0 2.7 Unit nA mA V V pF
