6系列仪器的操作指南一.安装.1.ECOW ATCH软件安装在电脑.2.按标准步骤,安装传感器.传感器的O型圈必须涂薄薄一层硅油,调整好传感器和主机底口的传感器的接口,轻轻用手插到位,仔细紧固传感器的螺丝.用手紧固到位.不要用工具紧固.3.若有光学传感器,先安装光学传感器,保留光学传感器的黑色橡胶帽,以免该传感器头因安装碰撞.4.DO传感器先安装DO膜,5775的组件内有白色瓶KCL请用蒸馏水稀释到该瓶的肩部,摇匀,静止15分钟,再取膜安装传感器.5.DO膜内应无气泡,无浊物,膜无皱纹.6.安装电池在电池仓(2号碱性电池,最好使用进口电池),特别注意,涂硅油作好防水.7.检查仪器的各附件,6095B,现场电缆(6091….或者6092,6093)先采用在线方式.8.带好保护套,校正杯(运输杯)内确保存有淡水.9.采样开始,卸去光学传感器的黑色保护橡胶套.10.上好保护套,注意不要损伤传感器.11.连接现场电缆到仪器,注意在仪器的连接端的金属内有一O型圈,必须涂硅油,拧好连接的丝.不必太用力.12.连接6095B到计算机的COM口.13.在COMM图标处,点击,出现设置.COMM 口设置,选择择安装的COMM口.14.通讯设置如下:BAUT RA TE:9600,BITS 8,STOP BITS 1, PARITY NONE15.打开ECOW ATCH的文件,双击带鞭图标,选择恰当COMM.确定OK.16.出现#17.输入MENU,回车18.进入主菜单19.输入1----RUN---DISCRETE SAMPLE----START SAMPLING20.观察数据的稳定性,二.校正1.新装传感器必须校正.2.已再用仪器,从数据看是否需要校正传感器.如果传感器的数据符合要求.DO,PH,SPCOND,必须校正,3.浊度和叶绿素,光学溶解氧,BGA传感器看性能,转刷停位是否正常,(一) 电导1.电导传感器校正应选择恰当的标准电导液.注意电导单位.2.电导校正步骤.3.从主菜单-----进入CALIBERATE----CONDUCTIVITY4.选SP CONDUCTIVITY,回车5..选择恰当的电导液(1MS/CM,10MS/CM,50MS/CM)6.注意校正杯的清洁,电导液应淹没电导传感器的中间圆形口.7.输入准确的数值8.读数稳定后,按ENTER9..电导校正完毕.10退回主菜单(二).PH传感器PH传感器调试时和测试前,须校正.1.从主菜单-----选择CALIBERA TE----选择ISE PH2.出现三种选择1.---1.POINT,2---2.POINTS,3.---3POINTS3.选择2---2.POINTS4.清洁水(蒸馏水)清洗校正杯和传感器,以利于校正液的循环使用.5.装入校正杯PH7.0的缓冲液适当体积.6.按照屏幕提示输入第一点,温度下的PH值7.0 ±X,回车.(X是当前温度的PH值余数)7.待PH值稳定时,确认(回车)8.清洁水(蒸馏水)清洗校正杯和传感器.9.按回车,出现第二点值.输入第二点温度的PH值10.0±X. (X是当前温度的PH值余数)10.使用蒸馏水清洗校正杯及传感器11.倒入PH10的缓冲液12.按回车,出现第二点值.输入第二点温度的PH值10.0±X. (X是当前温度的PH值余数)13.待PH稳定,按确认(回车)14.使用ESC退到主菜单,(三) DO校正21.同上进入溶氧校正的程序,选择在不同测量方式下校正.连续性采样按35----40步骤进行.无人照料和长期监测时,请按42和43步骤设置完毕,再按35----40步骤校正22.MAINＭＥＮＵ――选择ＣＡＬＩＢＥＲＡＴＥ―――――选择ＤＩＳＳＯＳＩＶＥOXYGEN23.两个校正选项:1.DO%, 2. MG/L24.进入1.—DO%25.输入当地大气压(MMHG)26.校正杯内放少许水.仅拧一丝校正杯.27.等待15分钟.按确认.28.DO%显示近100%(或当前大气压下的饱和度)29.在线测量溶氧校正完毕.若采用无人照料方式工作,或连续检测,采用将在ADV ANCE菜单中将AUTO232击活,30.在SET UP将DO W ARM UP TIMES=60秒.(四) 浊度浊度校正1.使用过滤后的蒸馏水清洗校正杯和传感器.2.从主菜单---传感器---击活光学传感器选项从MENU----选SENSOR选到相应光学的口,选中,3.识别传感器型号(6026,6136) 确定该传感器.4.退回主菜单5.进入校正MENU----CALIBERA TE6.选浊度(TURB)校正7.选取两点校正8.校正杯内轻轻倒入蒸馏水.轻提起主机,使6136传感器离底部有一距离8CM.9.输入第一点的浊度值0 NTU10.使用无灰滤纸清洁校正杯和传感器.11.使用少量浊度液清洗校正杯和传感器两次12.轻轻倒入浊度液,不要产生气泡.13.拧几丝校正杯14.按回车15.出现第二点浊度校正值16.压3键,转动光学传感器的刷.17.待浊度读数稳定18.按回车19.完成浊度校正(五).叶绿素传感器的校正1从主菜单选传感器项2.击活光学传感器,出现传感器选项3.选中6025叶绿素选项4.退回主菜单5.选校正项,按回车.6.出现三个校正选项7.选1点校正8.使用过滤蒸馏水清洗校正杯和传感器9.轻轻将蒸馏水倒入校正杯,不要产生气泡.10.按3键转动叶绿素的光学刷.清洁光学表面.11.等叶绿素读数稳定12.按回车.13.完成叶绿素一点校正,两点校正14.若需两点校正配相应的试剂,使用天平称0.05G(罗丹明B,亚啶橙)配置500ML吸取2ML亚啶橙溶液,稀释到1000ML(或吸取罗丹明B 5ML溶液,稀释到1000ML)查取相应温度的数值(看英文说明书)输入第二点.的值,稳定时,按ENTER仪器可以进入数据测量.仪器的使用,1连续性采样,从报告菜单选择你要记录的参数.,从MENU-------选RUN-----选DISCRETE SAMPLE出现采样设置界面.1.选择采样间隔,SAMPLE INTERV AL= XX 输入你要选择的采样间隔.2.选择要记录的文件名,使用数字,字母.3.选择你要记录的参数4.压START SAMPLING5.当数据稳定,使用1---记录一条数据到文件.使用2开始记录连续性数据.6.无人照料的采样设置.长期监测,先选择你要记录的参数.传感器必须涂防污涂料.从主菜单MENU------选RUN-----选UNATTENDING SAMPLING(无人照料)选择采样间隔,(XX:YY:ZZ,即小时:分:秒)确定要开始采样的日期,如2006/02/14 即年/月/日(格式是在MENU中系统SYSTEM中设置)设置采样的时间XX/YY/ZZ 小时/分/秒根据采样计划设定.使用数字键,选择START选YES.断开电缆,上好仪器电缆的防水,尘盖.放置仪器到准确的测量位置测量四.文件的调用,从主菜单MAIN MENU -----进入3.FILE----进入4---VIEW FILES查看所记录的数据文件是否存在,如果存在,使用3.FILE----2 UP LOAD,选择文件序号,按(数字或字母),1-PROCEED,回车.选择1-PC6000或3 txt格式,回车.出现进程窗口在主菜单中.完成后,从ECOWA TCH的上文件,打开,查找该文件,双击该文件.出现图形和数据表文件.可拷贝到MICROSOFTＥＸＣＬ处理．五.维护和保养1.温度/电导传感器,应再每次测试完毕使用清洁自来水清洗,以免淤泥留在电导池内影响测量.2.PH应在测试完毕后,校正杯内存有的自来水不要接初到PH传感器.3,溶解氧传感器应避免长时间脱离水饱和空气和水体的环境4,光学传感器的转刷不能使用手扭转.应在软件中,使用转刷命令.5,光学传感器转刷在有污物时,使用清洁水清洗,必要时更换.。
浪潮交换机FS5900/6500/6600基本功能配置手册文档版本1.0发布日期2017-07-30尊敬的用户：衷心感谢您选用了浪潮交换机！本手册介绍了本交换机的特性、规格、配置等信息，有助于您更详细地了解和便捷地使用本款交换机。
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目录版本控制 (ii)目录 (iii)1产品定位 (4)1.1FS5900 (4)1.2FS6500 (4)1.3FS6600 (5)2硬件特性 (6)2.1FS5900 (6)2.2FS6500/FS6600 (6)2.3指示灯&端口信息 (6)3规格参数 (8)3.1FS5900 (8)3.2FS6500 (9)3.3FS6600 (11)4初始化配置 (15)4.1配置及修改管理IP (15)4.2更改交换机名 (15)4.3交换机级联及ISL TRUNKING (15)5交换机Zone划分 (18)5.1创建Alias (19)5.2使用GUI管理Zone (19)5.3使用CLI管理Zone (20)5.4Zone配置管理 (22)6交换机FW升级 (24)7常用命令 (25)8术语&缩略语 (26)9附录：环保声明 (27)1产品定位1.1FS5900FS5900为8GB FC交换机。
Base part number Package TypeStandard Pack Orderable Part NumberForm QuantityIRGP6650DPbF TO-247AC Tube 25 IRGP6650DPbFIRGP6650D-EPbF TO-247AD Tube 25 IRGP6650D-EPbFAbsolute Maximum RatingsParameter Max. UnitsV CESCollector-to-Emitter Voltage 600 VI C @ T C = 25°C Continuous Collector Current 80 I C @ T C = 100°C Continuous Collector Current 50 I CM Pulse Collector Current, V GE = 15V 105I LMClamped Inductive Load Current, V GE = 20V ① 140 I FRM @ T C = 100°C Diode Repetitive Peak Forward Current ④⑥ 25I FM Diode Maximum Forward Current ④ 140 V GEContinuous Gate-to-Emitter Voltage ±20 V P D @ T C = 25°C Maximum Power Dissipation 306WP D @ T C = 100°C Maximum Power Dissipation 153 T J Operating Junction and -40 to +175 °C T STG Storage Temperature Range Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)A Thermal ResistanceParameterMin. Typ. Max. Units R θJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ②––– ––– 0.49 °C/WR θCSThermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– R θJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40 R θJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ②––– ––– 3.35 V CES = 600VI C = 50A, T C =100°Ct SC ≥ 5µs, T J(max) = 175°CV CE(ON) typ. = 1.65V @ I C = 35AApplications ∙ Welding∙ H Bridge ConvertersFeaturesBenefitsLow V CE(ON) and Switching LossesHigh Efficiency in a Wide Range of Applications Optimized Diode for Full Bridge Hard Switch Converters Optimized for Welding and H Bridge Converters Square RBSOA and Maximum Temperature of 175°C Improved Reliability due to Rugged Hard Switching Performance and High Power Capability 5µs Short CircuitEnables Short Circuit Protection Operation Positive V CE (ON) Temperature Co-efficient Excellent Current Sharing in Parallel Operation Lead-free, RoHS compliant Environmentally friendlyG C E Gate Collector EmitterG CE CCGC E Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery DiodeIRGP6650DPbF TO ‐247ACIRGP6650D ‐EPbF TO ‐247ADEGn-channelCElectrical Characteristics @ T J = 25°C (unless otherwise specified)Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V V GE = 0V, I C = 100µA ③∆V (BR)CES /∆T J Temperature Coeff. of Breakdown Voltage— 0.45 — V/°C V GE = 0V, I C = 1.0mA (25°C-175°C) V CE(on) Collector-to-Emitter Saturation Voltage — 1.65 1.95 V I C = 35A, V GE = 15V, T J = 25°C— 2.05 — I C = 35A, V GE = 15V, T J = 150°C— 2.10 — I C = 35A, V GE = 15V, T J = 175°CV GE(th)Gate Threshold Voltage 4.0 — 6.5 V V CE = V GE , I C = 1.0mA ∆V GE(th)/∆T J Threshold Voltage Temperature Coeff.— -18 — mV/°C V CE = V GE , I C = 1.0mA (25°C-175°C) gfe Forward Transconductance — 22 — S V CE = 50V, I C = 35A, PW = 20µsI CES Collector-to-Emitter Leakage Current — 1.0 50 V GE= 0V, V CE = 600V— 600 — V GE = 0V, V CE = 600V, T J = 175°C I GES Gate-to-Emitter Leakage Current— — ±100 nA V GE = ±20V V FDiode Forward Voltage Drop — 1.80 2.80 V I F = 8A— 1.30 — I F = 8A, T J = 175°CSwitching Characteristics @ T J = 25°C (unless otherwise specified)Parameter Min. Typ. Max Units ConditionsQ g Total Gate Charge (turn-on) — 75 — nC I C = 35A Q ge Gate-to-Emitter Charge (turn-on) — 20 — V GE = 15VQ gc Gate-to-Collector Charge (turn-on) — 30 —V CC = 400V E on Turn-On Switching Loss — 300 —µJ I C = 35A, V CC = 400V, V GE =15V R G = 10Ω, L=210µH, T J = 25°C Energy losses include tail & diode reverse recovery ⑤E off Turn-Off Switching Loss — 630 —E total Total Switching Loss — 930 — t d(on) Turn-On delay time — 40 —ns t rRise time — 30 —t d(off) Turn-Off delay time — 105 — t fFall time — 20 — E on Turn-On Switching Loss — 640 —µJ I C = 35A, V CC = 400V, V GE =15V R G = 10Ω, L=210µH, T J = 175°C Energy losses include tail & diode reverse recovery ⑤E off Turn-Off Switching Loss — 930 —E total Total Switching Loss — 1570 — t d(on) Turn-On delay time — 40 —ns t rRise time — 30 —t d(off) Turn-Off delay time — 120 — t f Fall time — 60 — C ies Input Capacitance — 2220 — V GE = 0VC oes Output Capacitance — 130 —pF V CC = 30V C res Reverse Transfer Capacitance — 65 —f = 1.0MHz RBSOA Reverse Bias Safe Operating AreaT J = 175°C, I C = 140A FULL SQUARE V CC = 480V, Vp ≤ 600V V GE = +20V to 0V SCSOA Short Circuit Safe Operating Area 5 — — µs T J = 150°C,V CC = 400V, Vp ≤ 600V V GE = +15V to 0VErec Reverse Recovery Energy of the Diode— 165 — µJ T J = 175°Ct rr Diode Reverse Recovery Time — 50 — ns V CC = 400V, I F = 8A, V GE = 15V I rrPeak Reverse Recovery Current—14—ARg = 22Ω, L=1.0mH, Ls=150nHµA Notes:① V CC = 80% (V CES ), V GE = 20V, Rg = 10Ω, L=210µH. ② R θ is measured at T J of approximately 90°C.③ Refer to AN-1086 for guidelines for measuring V (BR)CES safely. ④ Pulse width limited by max. junction temperature.⑤ Values influenced by parasitic L and C in measurement. ⑥fsw =40KHz, refer to figure 26.Fig. 5 - Reverse Bias SOA T J = 175°C; V GE = 20V255075100125150175T C (°C)20406080100I C (A )f , Frequency ( kHz )L o a d C u r r e n t( A )Fig. 1 - Typical Load Current vs. Frequency(Load Current = I RMS of fundamental)255075100125150175T C (°C)50100150200250300350P t o t (W )Fig. 4 - Forward SOAT C = 25°C; T J ≤ 175°C; V GE= 15V 1101001000V CE (V)I C (A)Fig. 2 - Maximum DC Collector Current vs.Case Temperature101001000V CE (V)I C (A )Fig. 3 - Power Dissipation vs.Case TemperatureFig. 10 - Typical V CE vs. V GET J = -40°CFig. 11 - Typical V CE vs. V GET J = 25°C1400246810V (V)0.01.02.03.04.05.06.0V F (V)5101520V GE (V)02468V C E (V )5101520V GE (V)02468V C E (V )Fig. 9 - Typ. Diode Forward Voltage DropFig. 16 - Typ. Energy Loss vs. R GT J = 175°C; V CE = 400V, I CE = 35A; V GE = 15V Fig. 17 - Typ. Switching Time vs. R G T J = 175°C; V CE = 400V, I CE = 35A; V GE = 15V5101520V GE (V)8246810121416V GE (V)010203040506070I C(A)1101001000S w i c h i n g T i m e (n s )Fig. 13 - Typ. Transfer CharacteristicsV CE= 50V; tp = 20µs20406080100R G (Ω)101001000S wi c h i n g T i m e (n s )Fig. 15 - Typ. Switching Time vs. I CT J = 175°C; V CE = 400V, R G = 10Ω; V GE = 15V10203040506070I C (A)01000200030004000E n e r g y (μJ )Fig. 12 - Typical V CE vs. V GET J = 175°CFig. 14 - Typ. Energy Loss vs. I CT J = 175°C; ; V CE = 400V, R G = 10Ω; V GE = 15V20406080100Rg (Ω)50010001500200025003000E n e r g y (μJ )Fig. 22 - Typ. Diode E RR vs. I FT J = 175°CFig. 20 - Typ. Diode I RR vs. di F /dt V CC = 400V; V GE = 15V; I F = 8A; T J = 175°C246810121416I F (A)05101520I R R (A )20406080100R G (Ω)0481216I R R (A )Fig. 19 - Typ. Diode I RR vs. R GT J = 175°C200400600800di F/dt (A/µs)46810121416I R R (A )Fig. 18 - Typ. Diode I RR vs. I FT J = 175°C246810121416I F (A)050100150200250E n e r g y (µJ )2004006008001000di F /dt (A/µs)2004006008001000Q R R (n C)Fig. 21 - Typ. Diode Q RR vs. di F /dt V CC = 400V; V GE = 15V; T J = 175°C910111213141516V GE (V)048121620T i m e (µs )50100150200250Current (A)Fig. 23 - V GE vs. Short Circuit TimeV CC = 400V; T C = 150°CFig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)V CE (V)Fig. 24 - Typ. Capacitance vs. V CE V GE = 0V; f = 1MHzQ G , Total Gate Charge (nC)Fig. 25 - Typical Gate Charge vs. V GEI CE= 35At 1, Rectangular Pulse Duration (sec)Fig 26. Maximum Diode Repetitive Forward Peak Current vs. Case Temperature100125150175Case Temperature (°C)t1 , Rectangular Pulse Duration (sec)Fig. 28 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA CircuitFig.C.T.3 - S.C. SOA CircuitFig.C.T.4 - Switching Loss CircuitFig.C.T.5 - Resistive Load CircuitFig.C.T.6 - BVCES Filter CircuitLVCCRSHVCCR = VCCFig. WF1 - Typ. Turn-off Loss Waveform@ T J = 175°C using Fig. CT.4Fig. WF2 - Typ. Turn-on Loss Waveform@ T J = 175°C using Fig. CT.4Fig. WF4 - Typ. S.C. Waveform @ T J = 150°C using Fig. CT.3Fig. WF3 - Typ. Diode Recovery Waveform@ T J = 175°C using Fig. CT.4-100102030405060-1000100200300400500600-0.20.20.40.60.8I C E (A )V C E (V )time(µs)90% I CE10% V CE10% I CEEoff Losstf-100102030405060-100100200300400500600-0.20.20.40.60.8I C E (A )V C E (V )time (µs)TEST CURRENT90% I CE10% V CE10%I CEtrEon Loss-20-15-10-5051015-0.200.000.200.400.60I F (A )time (µS)Peak I RRt RRQ RR-50050100150200250-100100200300400500-10.0-7.5-5.0-2.50.02.55.0V c e (V )Time (uS)V CEI CETO-247AC Package OutlineDimensions are shown in millimeters (inches)YEAR 1 = 2001DATE CODE PART NUMBERINTERNATIONAL LOGO RECTIFIER ASSEMBLY 56 57IRFPE30135HLINE Hindicates "Lead-Free"WEEK 35LOT CODEIN THE ASSEMBLY LINE "H"ASSEMBLED ON WW 35, 2001Notes: This part marking information applies to devices produced after 02/26/2001Note: "P" in assembly line positionEXAMPLE:WITH ASSEMBLY THIS IS AN IRFPE30LOT CODE 5657TO-247AC Part Marking InformationNote: For the most current drawing please refer to IR website at /package/ TO-247AC package is not recommended for Surface Mount Application.TO-247AD Package OutlineIR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USATo contact International Rectifier, please visit /whoto-call/Qualification Information † Qualification LevelIndustrial(per JEDEC JESD47F)††TO-247ACN/ATO-247ADRoHS Compliant Yes Moisture Sensitivity Level †Qualification standards can be found at International Rectifier’s web site: /product-info/reliability/†† Applicable version of JEDEC standard at the time of product release.Revision HistoryDate Comments∙ Added I FM Diode Maximum Forward Current = 140A with the note ④ on page 1. ∙ Removed note ④ from switching losses test condition on page 2.11/14/2014。
