5N60L-TF3-T中文资料

UNISONIC TECHNOLOGIES CO., LTD5N60Power MOSFET4.5 Amps, 600 Volts N-CHANNEL MOSFETDESCRIPTIONThe UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.FEATURES* R DS(ON) = 2.5Ω @V GS = 10 V* Ultra low gate charge ( typical 15 nC )* Low reverse transfer Capacitance ( C RSS = typical 6.5 pF ) * Fast switching capability * Avalanche energy Specified* Improved dv/dt capability, high ruggednessSYMBOL1.GateTO-22011TO-220F*Pb-free plating product number: 5N60LORDERING INFORMATIONOrder Number Pin AssignmentNormal Lead Free Plating Package 1 2 3 Packing5N60-TA3-T 5N60L-TA3-T TO-220 G D S Tube 5N60-TF3-T 5N60L-TF3-T TO-220F G D S TubeABSOLUTE MAXIMUM RATING (T C = 25℃ unless otherwise specified)PARAMETER SYMBOL RATINGS UNITDrain-Source Voltage V DSS 600 V Gate-Source Voltage V GSS ±30 V Avalanche Current (Note 1) I AR 4.5 AT C = 25 4.5 AContinuous Drain CurrentT C = 100 I D 2.6 APulsed Drain Current (Note 1) I DM 18 A Avalanche Energy, Single Pulsed (Note 2) E AS 210 mJ Avalanche Energy, Repetitive Limited by T J(MAX) E AR 10 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/nsT C = 25 100 WPower Dissipation Derate above 25 P D0.8 W/Junction Temperature T J +150 Operating and Storage Temperature T STG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.THERMAL DATAPARAMETER SYMBOL RATINGS UNITJunction-to-Ambient θJA 62.5 °C/W Junction-to-Case θJC 1.25 °C/W Case-to-Sink θCS 0.5 °C/WELECTRICAL CHARACTERISTICS (T C = 25 unless otherwise specified)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Off CharacteristicsDrain-Source Breakdown Voltage BV DSS V GS =0V, I D = 250µA 600 VV DS =600V, V GS = 0V 1µADrain-Source Leakage Current I DSSV DS =480V, T C = 12510µA Breakdown Voltage TemperatureCoefficient BV DSS /△T JI D =250µA, Referenced to 25 0.6 V/Forward V GS =30V, V DS = 0V 100nAGate-Body Leakage Current Reverse I GSSV GS =-30V, V DS = 0V -100nAOn Characteristics Gate Threshold Voltage V GS(TH) V DS =V GS , I D = 250µA 2.0 4.0V Static Drain-Source On-Resistance R DS(ON) V GS =10V, I D = 2.25A 2.0 2.5Ω Forward Transconductance g FS V DS =40V, I D = 2.25A (Note 4) 4.7 S Dynamic Characteristics Input Capacitance C ISS 515 670pFOutput Capacitance C OSS 55 72pFReverse Transfer Capacitance C RSSV DS = 25V, V GS = 0V,f = 1.0MHz6.5 8.5pF Switching CharacteristicsDelay Time t D(ON) 10 30nsTurn-OnRise Time t R 42 90ns Delay Time t D(OFF) 38 85nsTurn-OffFall Time t FV DD = 300V, I D =4.5 A,R G = 25Ω (Note 4, 5) 46 100ns Total Gate Charge Q G 15 19nCGate-Source Charge Q GS 2.5 nCGate-Drain Charge Q GDV DS = 480 V, I D = 4.5A,V GS = 10 V (Note 4, 5)6.6 nCELECTRICAL CHARACTERISTICS(Cont.)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITDrain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage V SD V GS = 0 V, I S = 4.5 A 1.4VMaximum Continuous Drain-Source DiodeForward CurrentI S 4.5 AMaximum Pulsed Drain-Source Diode ForwardCurrentI SM 18 AReverse Recovery Time t RR 300 ns Reverse Recovery Charge Q RR V GS = 0 V, I S = 4.5 A,d IF / dt = 100 A/µs (Note 4) 2.2 µCNote 1. Repetitive Rating : Pulse width limited by T J2. L = 18.9mH, I AS = 4.5 A, V DD = 50V, R G = 25 Ω, Starting T J = 253. I SD ≤4.5A, di/dt ≤ 200A/µs, V DD ≤ BV DSS , Starting T J = 25 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%5. Essentially independent of operating temperatureTEST CIRCUITS AND WAVEFORMSV DDV GS (Driver)I SD (D.U.T.)Body DiodeForward Voltage DropV DS(D.U.T.)Fig. 1A Peak Diode Recovery dv/dt Test CircuitFig. 1B Peak Diode Recovery dv/dt WaveformsTEST CIRCUITS AND WAVEFORMS (Cont.)R LDDV DS90%10%V GStFig. 2A Switching Test Circuit Fig. 2B Switching WaveformsFig. 3A Gate Charge Test CircuitFig. 3B Gate Charge Waveform10VLV DDI ASFig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching WaveformsTYPICAL CHARACTERISTICS1010101010Drain -Source Voltage ,V DS (V)D r a i n C u r r e n t , I D (A )10On-Region Characteristics101010Gate-Source Voltage , V GS (V)D r a i n C u r r e n t ,I D (A )Transfer Characteristics1000D r a i n -S o u r c e O n -R e s i s t a n c e , R D S (O N ) (Ω)Drain Current , I D (A)2412456On-Resistance Variation vs . Drain Current36810101010Drain-Source Voltage , V DS (V)D r a i n C u r r e n t , I D (A )1010101010Maximum Safe Operating Area。