Large high-frequency magnetoelectric response in laminated composites
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术语译名规范化有利于科技发展,有利于科技交流。
所以,翻译采用的术语首先应以“全国科学技术名词审定委员会”公布的为准。
0 型系统||type 0 system1 型系统||type 1 system2 型系统||type 2 system[返]回比矩阵||return ratio matrix[返]回差矩阵||return difference matrix[加]权函数||weighting function[加]权矩阵||weighting matrix[加]权因子||weighting factor[数字模拟]混合计算机||[digital-analog] hybrid computer[最]优化||optimizations 域||s-domainw 平面||w-planez [变换]传递函数||z-transfer functionz 变换||z-transformz 平面||z-planez 域||z-domain安全空间||safety space靶式流量变送器||target flow transmitter白箱测试法||white box testing approach白噪声||white noise伴随算子||adjoint operator伴随系统||adjoint system半实物仿真||semi-physical simulation, hardware-in-the-loop simulation 半自动化||semi-automation办公信息系统||office information system, OIS办公自动化||office automation, OA办公自动化系统||office automation system, OAS饱和特性||saturation characteristics报警器||alarm悲观值||pessimistic value背景仿真器||background simulator贝叶斯分类器||Bayes classifier贝叶斯学习||Bayesian learning备选方案||alternative被动姿态稳定||passive attitude stabilization被控变量||controlled variable; 又称“受控变量”。
低频振动的超声-磁电成像方法研究李芳芳;张旭东;陈思平;陈昕【摘要】本研究提出了低频振动的超声-磁电成像方法,是一种将超声成像与磁电成像相结合的双模成像法,可以同时获得组织的力学和电学信息.其基本原理为将生物体组织置于静磁场中,用低频振动激励组织内部使其发生振动,通过超声脉冲-回波法检测剪切波,可以获得组织内部的弹性结构;通过对表面电信号的检测,可以获取组织电导率信息.实验采用标准仿体和铜丝进行了验证性实验,实验结果表明该实验平台具有可行性与适用性.在此实验平台上对自制体模进行了初步探索,结果表明可以实现对自制体模的弹性和电导率的同步检测.%To propose a new ultrasonic -magnetoelectric imaging method with low frequency vibration , which is a dual modal func-tional imaging method combining acoustic and magneto -electric imaging methods .The basic principle of this method is to place a bio-logical tissue in a static magnetic field , and excite the tissue by a low frequency vibration to produce internal vibration .The elastic in-formation of the tissue can be obtained by detecting the shear wave by ultrasonic pulse echo method .The electrical conductivity infor-mation can be obtained by detecting the surface electrical signals .A test experiment was carried out using the QA phantom and copper wire.The experimental results showed that the experimental platform had feasibility and applicability .Then some preliminary experi-ments were performed which synchronously detected the elasticity and conductivity edge of the custom -made phantom .【期刊名称】《生物医学工程研究》【年(卷),期】2017(036)004【总页数】5页(P291-295)【关键词】低频振动;超声-磁电成像;双模;弹性;剪切波;电信号;电导率【作者】李芳芳;张旭东;陈思平;陈昕【作者单位】深圳大学医学部生物医学工程学院,深圳518060;深圳大学医学部生物医学工程学院,深圳518060;深圳大学医学部生物医学工程学院,深圳518060;医学超声关键技术国家地方联合工程实验室,深圳518060;广东省生物医学信息检测与超声成像重点实验室,深圳518060;深圳大学医学部生物医学工程学院,深圳518060;医学超声关键技术国家地方联合工程实验室,深圳518060;广东省生物医学信息检测与超声成像重点实验室,深圳518060【正文语种】中文【中图分类】R318;TB5591 引言肿瘤发展过程中,细胞外基质发生变化,导致组织变硬(力学信息)。
轨道交通学院毕业设计(论文)外文翻译题目:列车车载的直流恒流源的设计专业电子信息工程班级10115111学号1011511137姓名赵士伟指导教师陈文2014 年3 月 3 日本文摘自:IEEE TRANSACTIONS ON INDUSTRY AND GENERAL APPLICATIONS VOL. IGA-2, NO.5 SEPT/OCT 1966Highly Regulated DC Power Supplies Abstract-The design and application of highly regulated dc power supplies present many subtle, diverse, and interesting problems. This paper discusses some of these problems (especially inconnection with medium power units) but emphasis has been placed more on circuit economics rather than on ultimate performance.Sophisticated methods and problems encountered in connection with precision reference supplies are therefore excluded. The problems discussed include the subjects of temperature coefficient,short-term drift, thermal drift, transient response degeneration caused by remote sensing, and switching preregualtor-type units and some of their performance characteristics.INTRODUCTIONANY SURVEY of the commercial de power supply field will uncover the fact that 0.01 percent regulated power supplies are standard types and can be obtained at relatively low costs. While most users of these power supplies do not require such high regulation, they never-theless get this at little extra cost for the simple reason that it costs the manufacturer very little to give him 0.01 percent instead of 0.1 percent. The performance of a power supply, however, includes other factors besides line and load regulation. This paper will discuss a few of these-namely, temperature coefficient, short-term drift, thermal drift, and transient response. Present medium power dc supplies commonly employ preregulation as a means of improving power/volume ratios and costs, but some characteristics of the power supply suffer by this approach. Some of the short-comings as well as advantages of this technology will be examined.TEMPERATURE COEFFICIENTA decade ago, most commercial power supplies were made to regulation specifications of 0.25 to 1 percent. The reference elements were gas diodes having temperature coefficients of the order of 0.01 percent [1]. Consequently, the TC (temperature coefficient) of the supply was small compared to the regulation specifications and often ignored. Today, the reference element often carries aTC specification greater than the regulation specification.While the latter may be improved considerably at little cost increase, this is not necessarily true of TC. Therefore,the use of very low TC zener diodes, matched differential amplifier stages, and low TC wire wound resistors must be analyzed carefully, if costs are to be kept low.A typical first amplifier stage is shown in Fig. 1. CRI is the reference zener diode and R, is the output adjustment potentiometer.Fig. 1. Input stage of power supply.Fig. 2. Equivalent circuit of zener reference.Let it be assumed that e3, the output of the stage, feedsadditional differential amplifiers, and under steady-state conditions e3 = 0. A variation of any of the parameters could cause the output to drift; while this is also true of the other stages, the effects are reduced by the gain of all previous stages. Consequently, the effects of other stages will be neglected. The following disculssion covers the effects of all elements having primary and secondary influences on the overall TC.Effect of R3The equivalent circuit of CRI -R3 branch is shown in Fig. 2. The zener ha's been replaced with its equivalent voltage source E/' and internal impedance R,. For high gain regulators, the input of the differential amplifier will have negligible change with variations of R3 so thatbefore and after a variation of R3 is made.If it is further assumed that IB << Iz; then from (1)Also,Eliminating I, from (2b),andNow, assuming thatthen,Equation (2b) can also be writtenThe Zener DiodeThe zener diode itself has a temperature coefficient andusually is the component that dominates the overall TCof the unit. For the circuit of Fig. 1, the TC ofthe circuit describes, in essence, the portion of the regulator TC contributed by the zener. If the bridge circuit shown in Fig. 1 were used in conjunction with a dropping resistor so that only a portion of the output voltage appeared across the bridge circuit shown, the TC of the unit and the zener would be different. Since the characteristic of zeners is so well known and so well described in the literature, a discussion will not be given here [2].Variation of Base-Emitter VoltagesNot only do the values of V,, of the differential am-plifier fail to match, but their differentials with tem perature also fail to match. This should not, however,suggest that matched pairs are required. The true reference voltage of Fig. 1 is not the value E,, but E, + (Vie, -Vbe2)-Since, for most practical applicatioinsthe TC of the reference will be the TC of the zener plusConsidering that it is difficult to obtain matched pairs that have differentials as poor as 50 V/°C, it becomes rather apparent that, in most cases, a matched pair bought specifically for TC may be overdesigning.Example 2: A standard available low-cost matched pair laims 30AV/°C. In conjunction with a 1N752, the ontribution to the overall TC would beTests, performed by the author on thirteen standard germanium signal transistors in the vicinity of room temperature and at a collector current level of 3 mA,indicated that it is reasonable to expect that 90 to 95 percent of the units would have a base-emitter voltage variation of -2.1 to -2.4 mV/°C. Spreads of this magnitude have also been verified by others (e.g., Steiger[3]). The worst matching of transistors led to less than 400 ,V/°C differential. In conjunction with a 1N752,even this would give a TC of better than 0.007%/0C.Variation of Base CurrentsThe base current of the transistors is given byA variation of this current causes a variation in signal voltage at the input to the differential amplifier due to finite source impedances. Matching source impedances is not particularly desirable, since it reduces the gain of the system and requires that transistors matched for I,o and A be used. Hunter [4 ] states that the TC of a is in the range of +0.2%/0C to -0.2%7/'C and that 1,, may be approximated bywhere Ao is the value at To.β is also temperature dependent and Steiger [3] experimentally determined the variation to be from about 0.5%/°C to 0.9%/0C.And,Fig. 3. Input circuit of Q2.The current AIB flows through the source impedance per Fig. 3. The drops in the resistance string, however, are subject to the constraint that EB (and AEB) are determined by the zener voltage and the base-emitter drops of Q1 and Q2. Consequently, if in going from temperature T1to T2 a change AEB occurs,The change in output voltage isAndExample 3: For Q2 (at 25°C)(see Example 1)∴Variation of R,The effects of a variation of the TC between RIA and RIB is sufficiently self-evident so that a discussion of the contribution is not included.SHORT-TERM DRIFTThe short-term drift of a supply is defined by the National Electrical Manufacturers Association (NEMA) as "a change in output over a period of time, which change is unrelated to input, environment, or load [5]."Much of the material described in the section on temperature coefficient is applicable here as well. It has been determined experimentally, however, that thermal air drafts in and near thevicinity ofthe powersupplycontributesenormouslyto theshort-termcharacteristics. Thecooling effects of moving air are quite well known, but it is not often recognized that even extremely slow air movements over such devices as zeners and transistors cause the junction temperature of these devices to change rapidly. If the TC of the supply is large compared to the regulation, then large variations in the output will be observed. Units having low TC's achieved by compensation-that is, by canceling out the effects of some omponents by equal and opposite effects of others may still be plagued by these drafts due to the difference in thermal time constants of the elements.Oftentimes, a matched transistor differential amplifier in a common envelope is used for the first amplifier just to equalize and eliminate the difference in cooling effects between the junctions. Approximations to this method include cementing or holding the transistors together, imbedding the transistors in a common metal block, etc. Excellent results were achieved by the author by placing the input stage and zener reference in a separate enclosure. This construction is shown in Fig. 4. The improvement in drift obtained by means of the addition of the metal cover is demonstrated dramatically in Fig. 5.Fig. 5. Short-term drift of a power supply similar to the one shown in Fig. 4 with and without protective covers. The unit was operated without the cover until time tl, when the cover was attached. The initial voltage change following t, is due to a temperaturerise inside the box.Fig. 5. Short-term drift of a power supply similar to the one shown n Fig. 4 withand without protective covers. The unit was operated without the cover until time tl, when the cover was attached. The initial voltage change following t, is due to atemperature rise inside the box.If potentiometers are used in the supply for output adjustment (e.g., RI), care should be used in choosing the value and design. Variations of the contact resistance can cause drift. It is not always necessary, however, to resort to the expense of high-resolution multiturn precision units to obtain low drift. A reduction in range of adjustment, use of low-resistance alloys and low-resolution units which permit the contact arm to rest firmly between turns, may be just as satisfactory. Of course, other considerations should include the ability of both the arms and the wire to resist corrosion. Silicone greases are helpful here. Periodic movement of contact arms has been found helpful in "healing" corroded elements.THERMAL DRIFTNEMA defines thermal drift as "a change in output over a period of time, due to changes in internal ambient temperatures not normally related to environmental changes. Thermal drift is usually associated with changes in line voltage and/or load changes [5]."Thermal drift, therefore, is strongly related to the TC of the supply as well as its overall thermal design. By proper placement of critical components it is possible to greatly reduce or even eliminate the effect entirely. It is not uncommon for supplies of the 0.01 percent(regulation) variety to have drifts of between 0.05 to 0.15 percent for full line or full load variations. In fact, one manufacturer has suggested that anything better than 0.15 percent is good. Solutions to reducing thermal drift other than the obvious approach of improving the TC and reducing internal losses include a mechanical design that sets up a physical and thermal barrier between the critical amplifier components and heat dissipating elements. Exposure to outside surfaces with good ventilation is recommended. With care, 0.01 to 0.05 percent is obtainable.TRANSIENT RESPONSEMost power supplies of the type being discussed have a capacitor across the load terminals. This is used for stabilization purposes and usually determines the dominant time constant of the supply. The presence of this capacitor unfortunately leads to undesirable transient phenomena when the supply is used in the remote sensing mode①. Normally, transistorized power supplies respond in microseconds, but as the author has pointed out [6], the response can degenerate severely in remote sensing .The equivalent circuit is shown in Fig. 6. The leads from the power supply to the load introduce resistance r. Is is the sensing current of the supply and is relatively constant.Under equilibrium conditions,A sudden load change will produce the transient of Fig. 7. The initial "spike" is caused by an inductive surge Ldi/dt; the longer linear discharge following is the resultof the capacitor trying to discharge (or charge). The discharge time iswhereandThe limitations of I,, are usually not due to available drive of the final amplifier stages but to other limitations, current limiting being the most common. Units using pre regulators of the switching type (transistor or SCR types) should be looked at carefully if the characteristics mentioned represent a problem.①Remote sensing is the process by which the power supply senses voltage directly at the load.Fig. 6. Output equivalent circuit at remote sensing.Fig. 7. Transient response, remote sensing.Fig. 8. Block diagram.Preregulated supplies are used to reduce size and losses by monitoring and controlling the voltage across the class-A-type series passing stage (Fig. 8). Since the main regulator invariably responds much quicker than the preregulator, sufficient reserve should always be built into the drop across the passing stage. Failure to provide this may result in saturation of the passing stage when load is applied, resulting in a response time which is that of the preregulator itself.SWITCHING PREREGULATOR-TYPE UNITS The conventional class-A-type transistorized power supply becomes rather bulky, expensive, and crowded with passing stages, as the current and power level of the supply increases. The requirement of wide output adjustment range, coupled with the ability of the supply to be remotely programmable, aggravates the condition enormously. For these reasons the high-efficiency switching regulator has been employed as a preregulator in commercial as well as military supplies for many years. The overwhelming majority of the supplies used silicon controlled rectifiers as the control element. For systems operating from 60-cycle sources, this preregulator responds in 20 to 50 ms.Recent improvements in high-voltage, high-power switching transistors has made the switching transistor pproach more attractive. This system offers a somewhat lower-cost, lower-volume approach coupled with a submillisecond response time. This is brought about by a high switching rate that is normally independent of line frequency. The switching frequency may be fixed, a controlled variable or an independent self-generated (by the LC filter circuit) parameter [7], [8]. Faster response time is highly desirable since it reduces the amount of reserve voltage required across the passing stage or the amount of (storage) capacity required in the preregulator filter.A transistor suitable for operating as a power switch has a high-current, high-voltage rating coupled with low leakage current. Unfortunately, these characteristics are achieved by a sacrifice in thermal capacity, so that simultaneous conditions of voltage and current leading to high peak power could be disastrous. It therefore becomes mandatory to design for sufficient switch drive during peak load conditions and also incorporate current-limiting or rapid overload protection systems.Commercial wide-range power supplies invariably have output current limiting, but this does not limit the preregulator currents except during steady-state load conditions (including short circuits). Consider, for example, a power supply operating at short circuit and the short being removed suddenly. Referring to Fig. 8, the output would rise rapidly, reduce the passing stage voltage, and close the switching transistor. The resulting transient extends over many cycles (switching rate) so that the inductance of the preregulator filter becomes totally inadequate to limit current flow. Therefore, the current will rise until steady state is resumed, circuit resistance causes limiting, or insufficient drive causes the switch to come out of saturation. The latter condition leads to switch failure.Other operating conditions that would produce similar transients include output voltage programming and initial turn-on of the supply. Momentary interruption of input power should also be a prime consideration.One solution to the problem is to limit the rate of change of voltage that can appear across the passing stage to a value that the preregulator can follow. This can be done conveniently by the addition of sufficient output capacitance. This capacitance inconjunction with the current limiting characteristic would produce a maximum rate of change ofwhereC0 = output capacity.Assuming that the preregulator follows this change and has a filter capacitor Cl, then the switch current isDuring power on, the preregulator reference voltage rise must also be limited. Taking this into account,whereER = passing stage voltageTl = time constant of reference supply.The use of SCR's to replace the transistors would be a marked improvement due to higher surge current ratings, but turning them off requires large energy sources. While the gate turn-off SCR seems to offer a good compromise to the overall problem, the severe limitations in current ratings presently restrict their use.REFERENCES[1] J. G. Truxal, Control Engineer's Handbook. New York: McGrawHill, 1958, pp. 11-19.[2] Motorola Zener Diode/Rectifier Handbook, 2nd ed. 1961.[3] W. Steiger, "A transistor temperature analysis and its applica-tion to differential amplifiers," IRE Trans. on Instrumentation,vol. 1-8, pp. 82-91, December 1959.[4] L. P. Hunter, Handbook of Semi-Conductor Electronics. NewYork: McGraw Hill, 1956, p. 13-3.[5] "Standards publication for regulated electronic dc powersupplies," (unpublished draft) Electronic Power Supply Group,Semi-Conductor Power Converter Section, NEMA.[6] P. Muchnick, "Remote sensing of transistorized power sup-plies," Electronic Products, September 1962.[7] R. D. Loucks, "Considerations in the design of switching typeregulators," Solid State Design, April 1963.[8] D. Hancock and B. Kurger, "High efficiency regulated powersupply utilizing high speed switching," presented at the AIEEWinter General Meeting, New York, N. Y., January 27-February 1, 1963.[9] R. D. Middlebrook, Differential Amplifiers. New York: Wiley,1963.[10] Sorensen Controlled Power Catalog and Handbook. Sorensen,Unit of Raytheon Company, South Norwalk, Conn.With the rapid development of electronic technology, application field of electronic system is more and more extensive, electronic equipment, there are more and more people work with electronic equipment, life is increasingly close relationship. Any electronic equipment are inseparable from reliable power supply for power requirements, they more and more is also high. Electronic equipment miniaturized and low cost in the power of light and thin, small and efficient for development direction. The traditional transistors series adjustment manostat is continuous control linear manostat. This traditional manostat technology more mature, and there has been a large number of integrated linear manostat module, has the stable performance is good, output ripple voltage small, reliable operation, etc. But usually need are bulky and heavy industrial frequency transformer and bulk and weight are big filter.In the 1950s, NASA to miniaturization, light weight as the goal, for a rocket carrying the switch power development. In almost half a century of development process, switch power because of its small volume, light weight, high efficiency, wide range, voltage advantages in electric, control, computer, and many other areas of electronic equipment has been widely used. In the 1980s, a computer is made up of all of switch power supply, the first complete computer power generation. Throughout the 1990s, switching power supply in electronics, electrical equipment, home appliances areas to be widely, switch power technology into the rapid development. In addition, large scale integrated circuit technology, and the rapid development of switch power supply with a qualitative leap, raised high frequency power products of, miniaturization, modular tide.Power switch tube, PWM controller and high-frequency transformer is an indispensable part of the switch power supply. The traditional switch power supply is normally made by using high frequency power switch tube division and the pins, such as using PWM integrated controller UC3842 + MOSFET is domestic small power switch power supply, the design method of a more popularity.Since the 1970s, emerged in many function complete integrated control circuit, switch power supply circuit increasingly simplified, working frequency enhances unceasingly, improving efficiency, and for power miniaturization provides the broad prospect. Three end off-line pulse width modulation monolithic integrated circuit TOP (Three switch Line) will Terminal Off with power switch MOSFET PWM controller one package together, has become the mainstream of switch power IC development. Adopt TOP switch IC design switch power, can make the circuit simplified, volume further narrowing, cost also is decreased obviouslyMonolithic switching power supply has the monolithic integrated, the minimalist peripheral circuit, best performance index, no work frequency transformer can constitute a significant advantage switching power supply, etc. American PI (with) company in Power in the mid 1990s first launched the new high frequency switching Power supply chip, known as the "top switch Power", with low cost, simple circuit, higher efficiency. The first generation of products launched in 1994 represented TOP100/200 series, the second generation product is the TOPSwitch - debuted in 1997 Ⅱ. The above products once appeared showed strong vitality and he greatly simplifies thedesign of 150W following switching power supply and the development of new products for the new job, also, high efficiency and low cost switch power supply promotion and popularization created good condition, which can be widely used in instrumentation, notebook computers, mobile phones, TV, VCD and DVD, perturbation VCR, mobile phone battery chargers, power amplifier and other fields, and form various miniaturization, density, on price can compete with the linear manostat AC/DC power transformation module.Switching power supply to integrated direction of future development will be the main trend, power density will more and more big, to process requirements will increasingly high. In semiconductor devices and magnetic materials, no new breakthrough technology progress before major might find it hard to achieve, technology innovation will focus on how to improve the efficiency and focus on reducing weight. Therefore, craft level will be in the position of power supply manufacturing higher in. In addition, the application of digital control IC is the future direction of the development of a switch power. This trust in DSP for speed and anti-interference technology unceasing enhancement. As for advanced control method, now the individual feels haven't seen practicability of the method appears particularly strong,perhaps with the popularity of digital control, and there are some new control theory into switching power supply.(1)The technology: with high frequency switching frequencies increase, switch converter volume also decrease, power density has also been boosted, dynamic response improved. Small power DC - DC converter switch frequency will rise to MHz. But as the switch frequency unceasing enhancement, switch components and passive components loss increases, high-frequency parasitic parameters and high-frequency EMI and so on the new issues will also be caused.(2)Soft switching technologies: in order to improve the efficiency ofnon-linearity of various soft switch, commutation technical application and hygiene, representative of soft switch technology is passive and active soft switch technology, mainly including zero voltage switch/zero current switch (ZVS/ZCS) resonance, quasi resonant, zero voltage/zero current pulse width modulation technology (ZVS/ZCS - PWM) and zero voltage transition/zero current transition pulse width modulation (PWM) ZVT/ZCT - technical, etc. By means of soft switch technology can effectively reduce switch loss and switch stress, help converter transformation efficiency (3)Power factor correction technology (IC simplifies PFC). At present mainly divided into IC simplifies PFC technology passive and active IC simplifies PFC technology using IC simplifies PFC technology two kinds big, IC simplifies PFC technology can improve AC - DC change device input power factor, reduce the harmonic pollution of power grid.(4)Modular technology. Modular technology can meet the needs of the distributed power system, enhance the system reliability.(5)Low output voltage technology. With the continuous development of semiconductor manufacturing technology, microprocessor and portable electronic devices work more and more low, this requires future DC - DC converter can provide low output voltage to adapt microprocessor and power supply requirement of portable electronic devicesPeople in switching power supply technical fields are edge developing related power electronics device, the side of frequency conversion technology, development of switch between mutual promotion push switch power supply with more than two year growth toward light, digital small, thin, low noise and high reliability, anti-interference direction. Switching powersupply can be divided into the AC/DC and DC/DC two kinds big, also have AC/AC DC/AC as inverter DC/DC converter is now realize modular, and design technology and production process at home and abroad, are mature and standardization, and has approved by users, but the AC/DC modular, because of its own characteristics in the process of making modular, meet more complex technology and craft manufacture problems. The following two types of switch power supply respectively on the structure and properties of this.Switching power supply is the development direction of high frequency, high reliability, low consumption, low noise, anti-jamming and modular. Because light switch power, small, thin key techniques are changed, so high overseas each big switch power supply manufacturer are devoted to the development of new high intelligent synchronous rectifier, especially the improvement of secondary devices of the device, and power loss of Zn ferrite (Mn) material? By increasing scientific and technological innovation, to enhance in high frequency and larger magnetic flux density (Bs) can get high magnetic under the miniaturization of, and capacitor is a key technology. SMT technology application makes switching power supply has made considerable progress, both sides in the circuitboard to ensure that decorate components of switch power supply light, small, thin. The high frequency switching power supply of the traditional PWM must innovate switch technology, to realize the ZCS ZVS, soft switch technology has becomethe mainstream of switch power supply technical, and greatly improve the efficiency of switch power. For high reliability index, America's switch power producers, reduce by lowering operating current measures such as junction temperature of the device, in order to reduce stress the reliability of products made greatly increased.Modularity is of the general development of switch power supply trend can be modular power component distributed power system, can be designed to N + 1 redundant system, and realize the capacity expansion parallel. According to switch power running large noise this one defect, if separate the pursuit of high frequency noise will increase its with the partial resonance, and transform circuit technology, high frequency can be realized in theory and can reduce the noise, but part of the practical application of resonant conversion technology still have a technical problem, so in this area still need to carry out a lot of work, in order to make the technology to practional utilization.Power electronic technology unceasing innovation, switch power supply industry has broad prospects for development. To speed up the development of switch power industry in China, we must walk speed of technological innovation road, combination with Chinese characteristics in the joint development path, for I the high-speed development of national economy to make the contribution. The basic principle and component functionAccording to the control principle of switch power to classification, we have the following 3 kinds of work mode:1) pulse width adjustment type, abbreviation Modulation PulseWidth pulse width Modulation (PWM) type, abbreviation for. Its main characteristic is fixed switching frequency, pulse width to adjust by changing voltage 390v, realize the purpose. Its core is the pulse width modulator. Switch cycle for designing filter circuit fixed provided convenience. However, its shortcomings is influenced by the power switch conduction time limit minimum of output voltage cannot be wide range regulation; In addition, the output will take dummy loads commonly (also called pre load), in order to prevent the drag elevated when output voltage. At present, most of the integrated switch power adopt PWM way.2) pulse frequency Modulation mode pulse frequency Modulation (, referred to PulseFrequency Modulation, abbreviation for PFM) type. Its characteristic is will pulse width fixed by changing switch frequency to adjust voltage 390v, realize the purpose. Its core is the pulse frequency modulator. Circuit design to use fixed pulse-width generator to replace the pulse width omdulatros and use sawtooth wave generator voltage? Frequency converter (for example VCO changes frequency VCO). It on voltage stability principle is: when the output voltage Uo rises, the output signal controller pulse width unchanged and cycle longer, make Uo 390v decreases, and reduction. PFM type of switch power supply output voltage range is very wide, output terminal don't meet dummy loads. PWM way and way of PFM respectively modulating waveform is shown in figure 1 (a), (b) shows, tp says pulse width (namely power switch tube conduction time tON), T represent cycle. It can be easy to see the difference between the two. But they have something in common: (1) all use time ratio control (TRC) on voltage stability principle, whether change tp, finally adjustment or T is。
引言超声切割止血技术的发展为外科手术的精细化提供了技术支撑,促使在手术治疗过程中,最大限度地减少组织损伤。
高频电刀原理是电流过组织,从而产生热量使组织变性、碳化而发挥切割作用,极易造成组织的热损伤[1]。
为弥补高频电刀的缺陷,1994年诞生了超声刀。
超声刀的热损伤远小于高频电刀,同时具有抓持分离等作用[2-3]。
超声刀作为目前外科医生武器库的重要支柱,它的多功能性和精准的控制能力能够在精细解剖和游离血管中发挥重大作用[4-5]。
本文回顾了超声刀使用现状、超声高频集成技术的临床实验等相关文献研究,目前市面上现有的超声刀技术具有很大的局限性,在处理大血管时都需要使用额外的止血夹或者血管闭合系统来辅助完成大血管闭合操作[6]。
为满足手术需要,外科医生在手术过程中需要频繁更换手术器械,极大地增大了术中出血、手术时间延长以及耗材成本增加的可能性[7]。
同时现有使用超声刀收费条目存在很大问题,无法覆盖使用超声刀成本费用,一次性超声刀头进行复消使用,存在极大的感控风险。
超声高频集成技术集合了高频电刀和超声刀的功能,充分实现了精细游离与大血管凝闭(直径5~7 mm )的功能整合,在外科手术中发挥巨大的作用,是传统超声刀的一种全新突破,符合国家对于新增医疗技术收费项目的要求,有实现超声刀头除外收费的可能性[8-9]。
因此,本文对超声高频集成技术的优势及临床应用价值进行综述,以期探索出更加安全有效、具有经济效益的适用于腔镜外科手术的手术器械。
1 超声高频集成技术核心技术介绍超声高频集成技术利用谐波ACE 剪切机和自适应组织技术算法来监控仪器,从而对组织状况做出智能响应。
其主机能够集成超声和高频两种能量的输出,并且具有最新的智能组织感应技术和人工智能算法,可以根据组织厚度和组织类型调节能量传递,以优化血管密封,达到更好的凝闭效果和更小热损伤[6]。
新技术首次实现了超声能下的自适应组织感应技术(安全凝闭5~7 mm 血管),能够通过超声波算法实现主动监控装置钳口内组织的状况,从而能超声高频集成技术的优势及临床应用价值周健北京大学深圳医院 物价医保科,广东 深圳 518036[摘 要] 超声高频集成技术集合了高频电刀和超声刀的功能,充分实现了精细游离与大血管凝闭(直径5~7 mm )功能整合,在临床外科手术中发挥巨大的作用。
第一部分:电机名称电机 electric machine交流电机 alternating-current machine直流电机 direct-current machine电动机 motor发电机 generator三相异步电机 three-phase induction motor 单相异步电机 single-phase induction motor 罩极式电机 shaded-pole motor同步电动机 synchronous motor并励电动机 shunt DC motor复励电动机 compound DC motor他励电动机 separately excited motor伺服电动机 servomotor控制电动机 control motor同步发电机 synchronous generator汽轮发电机 turboalternator水轮发电机 water-wheel generator自励发电机 self-excited generator并励发电机 shunt DC generator串励发电机 seriers field generator复励发电机 compound DC generator他励发电机 separately excited generator 测速发电机 tachometer generator励磁机 exciter永磁发电机 permanent magnet generator 异步发电机 asynchronous generator变速电动机 varying speed generator多速电动机 multi-speed generator调速电动机 adjustable-speed motor磁阻电动机 reluctance motor锥形转子电机 conical rotor machine电容电动机 capacitor motor无刷电机 brussless electric machine第二部分:电机部件机座 frame,stator frame底脚 foot接线盒 terminal box接线板 terminal board接线柱 terminal column端盖 endshield 凸缘端盖 flange endshield吊环 eyebolt铭牌 data plate,name plate定子 stator定子铁心 stator core转子 rotor转子铁心 rotor core定子槽 stator slot转子槽 rotor slot槽楔 slot wedge槽绝缘 slot liner相间绝缘 phase coil insulation(线圈绝缘)层间绝缘 coil side separator绕组 winding定子绕组 stator winding转子绕组 rotor winding散嵌绕组 random winding成形绕组 performed winding同心式绕组 concentric winding交叉式绕组 cross winding叠绕组lap winding波绕组 wave winding蛙式绕组 frog-leg winding单层绕组 single layer winding双层绕组 two-layer winding单-双层绕组 single and two-layer winding 正弦绕组 sine winding长距绕组 long pitch winding短距绕组 short pitch winding电枢 armature电枢绕组 armature winding励磁绕组 field winding他励绕组 separately field winding串励绕组 series field winding并励绕组 shunt field winding换向绕组 commutating winding补偿绕组 compensation winding主绕组 primary winding辅绕组 secondary winding磁极 pole极靴 pole shoe鼠笼式转子 squirrel-cage rotor绕线式转子 wound rotor凸极转子 salient poles rotor隐极转子 nonsalient poles rotor 铸铝转子 casting aluminium rotor 铜条转子 copper bar rotor永磁转子 permanent magnet rotor 锥形转子 conical rotor轴 shaft轴伸shaft extension键槽 keyway,key seat键 key轴承 bearing滚动轴承 ball bearing滑动轴承 sliding bearing风扇 fan风扇罩 fan cover,fan housing 鼓风机 air pump进风孔(口) air inlet出风孔(口) air outlet换向器 commutator集电环 collector ring电刷(碳刷) carbon brush电刷架 brush rocker电刷压簧 brush pressure spring刷盒 brush box离心开关 centrifugal switch第三部分电机技术参数型号 type,model额定功率 rated power额定电压 rated voltage额定频率 rated frequency额定电流 rated current转子电压 rotor voltage转子电流 rotor current励磁方式 field manner他励 separately excited并励 shunt field串励 series field复励 compound field自励 self-excited单相 single phase三相 three phase同步转速 synchronous speed 额定转速 rated speed最高转速 maximum speed工作制 duty防护等级 degree of protection冷却方式 cooling method重量 weight绝缘等级 insulation class接线方式 mode of connection接线图 connection diagram星形连接 star connection三角形连接 delta connection安装方式 mounting type第四部分电机性能参数绝缘电阻 insulation resistance温升 temperature rise效率 efficiency功率因数 power factor转差率 slip起动转矩 start torque起动电流 start current最大转矩 maximum torque最小转矩 minimum torque牵入转矩 pull-in torque失步转矩 pull-out torque电磁转矩 electromagnetic torque 空载电流 no load current空载损耗 no load loss机械损耗 machine loss铁损耗 core loss定子铜耗 stator copper loss转子铜耗 rotor copper loss励磁铜耗 field loss电刷损耗 carbon brush loss杂散损耗 stray loss仪表损耗 meter loss总损耗 total loss输入功率 input power输出功率 output power视在功率 apparent power无功功率 reactive power直流电阻 DC resistance过电压 over voltage过电流 over current过转矩 over torque耐电压 voltage-withstand匝间耐电压 interturn voltage-withsatnd超速 over speed噪声(声压级) noise(LP)噪声(功率级) noise(LW)振动(速度) vibration severity换向火花 commutation spark转速差 speed difference转速调速率 speed regulation电压调速率 voltage regulation正弦畸变率 voltage sine-wave distortion factor电话谐波因数telephone harmonics factor谐波电压因数harmonics voltage factor第五部分试验设备及仪器仪表变压器 transformer调压器 voltage regulator开关柜 switch disc控制台 control gear试验台 test bed仪表 instrument,meter万用表 universal meter瓦特表 wattmeter电流表 ammeter电压表 voltmeter电磁式仪表 electromagnetic instrument电动式仪表 electrodynamic instrument磁电式仪表 magnetoelectric instrument整流式仪表 rectifier instrument转速表 speedometer兆欧表 meg meter频率表 frequency instrument声级表 noise meter测振表 vibration measurement测力计 dynamometer温度计 thermometer测功机 dynamometer示波器 oscillograph电阻器 resistor 电感器 inductor电容器 capacitor整流器 rectifier逆变器 inventor变频器 frequency convertor变频机 frequency changer传感器 sensor打印机 printer绘图机 drafting machine第六部分电工学术语电流 current电流密度 current density电压 voltage电位 electric potential电位差 electric potential difference 电动势 electromotive force感应电动势 inducted EMF电阻 resistance电阻性电路 resistance circuit电阻率 resistivity电导 conductance电导率 conductivity电容 capacitor电容性电路 capacitive circuit电感 inductance电感性电路 inductive circuit阻抗 impedance容抗 capacitive reactance感抗 inductive reactance功率 power有功功率 active power相位角 phase angle相序 phase sequence相量 phasor相量图 phasor diagram初相位 initial phase滞后 lag超前 lead磁场 magnetic field磁场强度 magnetizing force磁通 flux磁感应强度 flux density磁阻 reluctance磁导率 permeability磁动势 magnetomotive force磁化 magnetization磁滞 hysteresis磁滞回线 hysteresis loop磁滞损耗 hysteresis loss磁化曲线 magnetization curve磁极 pole漏磁通 leakage flux回路 loop导体 conductor导纳 admittance电路 circuit开路 open circuit短路 short circuit串联 series connection并联 parallel connection直流 direcit current正极 positive pole负极 negative pole交流电 alternating current正弦交流电 sinusoidal current三相 three phases三相对称电路symmetrical three-phase circuit 三相三线制 three-phase three-wire system 三相四线制 three-phase four-wire system 中点 neutral point中线 neutral conductor接地 put to earth基波(分量) fundamental(component)谐波(分量) harmonics(component)瞬时值 instantaneous value平均值 mean value均平方根值 R.M.S(effective)value周期 period频率 frequency峰值,振幅 peak value双倍振幅 form factor of a symmetricalalternating quantity谐振,共振 resonance三相的不平衡度degrees of unbalance in athree-phase system安培 Ampere 伏特 Volt瓦特 Watt欧姆 Ohm韦伯 Weber高斯 Gauss麦克斯韦 Maxwell特斯拉 Tesla库仑 Coulomb亨利 Henry法拉 Farad焦耳 Joule奥斯特 Oersted赫兹 Hertz欧姆定律 Ohm’s law焦耳定律 Joule’s law楞次定律 Lenz’s law全电流定律 law of total current基尔霍夫电流定律Kirchhoff’s current law(KCL)基尔霍夫电压定律Kirchhoff’s voltage law 法拉第电磁感应定律Farad’s electromagnetic induced law第七部分试验术语试验 test性能试验 performance tests型式试验 type tests检查试验 routine tests抽样试验 sampling tests验收试验 acceptance tests效率的直接测定direct calculation of efficiency效率的间接测定 indirect calculation of efficiency效率的损耗分析 calculation of efficiencyfrom summation of losses对拖试验 mechanical back to back test回馈试验 electrical back to back test空载试验 no load test开路试验 open-circuit test稳态短路试验sustained short-circuit test突然短路试验 sudden short-circuit test零功率因数试验zero power factor test温升试验 temperature rise test波形测定 waveform measurement谐波试验 harmonic test堵转试验 locked-rotor test起动试验 starting test牵入转矩试验 pull-in test最大转矩测定 pull-out test,breakdown test换向试验 commutation test无火花换向试验black-hand test直流电阻测试 resistance test铁心损耗试验 core test超速试验 overspeed test振动试验 vibration test噪声级试验 noise-level test轴电压试验 shaft-voltage test转向试验 rotation test相序试验 phase-sequence test极性试验 polarity test换向片间电阻试验 har-to-test绝缘电阻试验 insulation resistance test耐电压试验 high-voltage test介质损耗角试验loss tangent test匝间试验 inerturn test,turn-to-turn test 饱和特性 saturation characteristic开路特性(空载特性) open-circuit characteristic(no load characteristic)负载特性 load characteristic短路特性 short-circuit characteristic堵转特性 locked-rotor characteristic零功率因数特性 zero power-factor characteristic电压调整特性 voltage regulation characteristic转速调整特性 speed regulation characteristicV型曲线特性V-curve characteristic功角特性 load angle characteristic外特性 external characteristic伏安特性 volt-ampere characteristic机械特性 torque-speed characteristic 调节特性 regulating characteristic磁化曲线 magnetization curve磁滞曲线 hysteresis curve 圆图 circle diagram环境温度 ambient temperature 冷态 cold state冷态电阻 cold resistance热态 thermal state热态电阻 thermal resistance 热稳定 thermal stabilization 环境噪声 ambient noise level 额定值 rated value定额 rating。
摘要摘要近年来,移动通讯技术的不断地进步与发展,消费者对移动通信网络的覆盖面积与信号质量提出了更高的要求。
由于现代钢筋混凝土结构的建筑物对室外的基站信号有吸收和屏蔽作用,这样会对无线电波造成很大的传输损耗,因此移动终端在室内接收到的基站信号非常小,这可能导致室内的用户无法正常使用移动终端。
此外,在一些建筑物内,移动终端设备虽然能够正常通话,然而在这些建筑内用户数量比较多,由于基站信道拥挤,所以移动终端上线比较困难。
室内分布天线系统可以将移动基站的信号均匀分布在室内每个角落来解决这一问题,在这种情况下,本文提出了多款应用于室内分布系统的宽带定向天线及其宽带MIMO定向天线。
1. 双频宽带定向电磁偶极子天线设计。
本文通过对传统电磁偶极子天线进行研究,分别提出了双频宽带定向电磁偶极子天线和双频宽带双极化定向电磁偶极子天线,两款天线覆盖了目前国内三大运营商所使用的通信频段0.806~0.96 GHz和1.71~2.69 GHz。
本文提出了采用 形寄生枝节来改善电磁偶极子天线低频阻抗匹配的方法以及分析了影响天线低频辐射特性的原因。
按照两款天线的仿真模型,对天线进行了实物加工并且进行了测试,测试结果与仿真结果吻合比较良好,它们均可应用在室内分布天线系统中。
2. 双频宽带双极化定向MIMO天线设计。
首先设计了一款新形式的双频宽带双极化定向电磁偶极子天线,该天线采用寄生金属环加载,并且在地板边缘添加有一定倾斜角度的挡板,该天线在工作频段内具有良好的定向辐射特性、稳定的增益以及良好的交叉极化特性。
在此天线的基础上,用该天线组成了2×2 MIMO阵列,为了调节同极化天线单元之间的隔离度,在每两个天线单元之间引入了不同高度的挡板。
两款天线都覆盖了0.806~0.96 GHz和1.71~2.69 GHz国内的移动通信频段。
同样对两款天线仿真模型进行了加工和测量,测试结果与仿真结果基本吻合。
3. 带有陷波特性的双频宽带双极化定向MIMO天线设计。
GPS英语专业词汇Acquisition Time: 初始定位时间Active Leg: 激活航线Adapter: 转接器、拾音器、接合器Airborne: 空运的、空降的、机载的、通过无线电传播的Alkaline: 碱性的、碱性Almanac: 历书、概略星历Anti-Spoofing: 反电子欺骗Artwork: 工艺、工艺图、原图ssAtomic Clock: 原子钟Auto-controlling: 自动控制Avionics: 航空电子工学;电子设备Azimuth: 方位角、方位(从当前位置到目的地的方向)Beacon: 信标Bearing: 方向,方位(从当前位置到目的地的方向)Bug: 故障、缺陷、干扰、雷达位置测定器、窃听器Built-in: 内置的、嵌入的Cellular: 单元的、格网的、蜂窝的、网眼的Cinderella: 水晶鞋、灰姑娘。
这里特指JA V AD GPS接收机OEM板的选项,能自动在隔周的星期二GPS午夜时刻开始的24小时内让您的Javad接收机和OEM板变为双频双系统。
Coarse Acquisition Code(C/A): 粗捕获码Cold Start: 冷启动Connector: 接头、插头、转接器Constellation: 星座Control Segment: 控制部分Converter: 转换器、交换器、换能器、变频管、变频器、转换反应堆Coordinate: 坐标Co-pilot: 飞机副驾驶Cost-effective: 成本低,收效大的Course: 路线、路程、航线Course Deviation Indicator (CDI): 航线偏航指示Course Made Good (CMG): 从起点到当前位置的方位Course Over Ground (COG): 对地航向Course To Steer(CTS): 到目的地的最佳行驶方向Crosstrack Error (XTE/XTK): 偏航De-emphasis: 去矫、去加重Definition: 清晰度Diagonal: 对角线、斜的、对角线的Distinguishability: 分辨率Dropping resistors: 减压电阻器、将压电阻器Datum: 基准Desired Track (DTK): 期望航线(从起点到终点的路线)Differential GPS (DGPS): 差分GPSDilution of Precision (DOP): 精度衰减因子Elevation: 海拔、标高、高度、仰角、垂直切面、正观图Enroute: 在航线上、航线飞行Ephemeris: 星历Estimated Position Error (EPE): 估计位置误差Estimated Time Enroute (ETE): 估计在途时间(已当前速度计算) Estimated Time of Arrival (ETA): 估计到达时间Front-loading data cartridges: 前载数据卡Geodesy: 大地测量学Global Positioning System(GPS): 全球定位系统GLONASS: 俄国全球定位系统GOTO: 从当前位置到另一航路点的航线Greenwich Mean Time: 格林威治时间Grid: 格网坐标Heading: 航向Headphone: 戴在头上的收话器、双耳式耳机Headset amplifier: 头戴式放大器High-contrast: 高对比度Intercom: 内部通信联络系统、联络用对讲电话装置Intersection: 空域交界Interface Option (I/O): 界面接口选项Initialization: 初始化Invert Route: 航线反转Jack: 插座、插孔Keypad: 键盘、按键Kinematic: 动态的L1 Frequency: GPS信号频率之一(1575.42 MHz)L2 Frequency: GPS信号频率之一(1227.6 MHz)Latitude: 纬度、纬线Leg (route): 航段,航线的一段Liquid Crystal Display (LCD): 液晶显示器Local Area Augmentation System (LAAS): 局域增强系统Localizer: 定位器、定位发射机、定位信标Longitude: 经度、经线Long Range Radio Direction Finding System (LORAN): 罗兰导航系统Magnetic North: 磁北Magnetic Variation: 磁偏角Map Display: 地图显示Meter: 米Mount: 安装、支架、装配、管脚、固定件Multiplexing Receiver: 多路复用接收机Multipath: 多路径Nautical Mile: 海里(1海里=1.852米).Navigation: 导航Navigation Message: 导航电文NA Vigation Satellite Timing and Ranging(NA VSTAR) Global Positioning System: GPS系统的全称National Marine Electronics Association (NMEA): (美国)国家航海电子协会NMEA 0183: GPS接收机和其他航海电子产品的导航数据输出格式North-Up Display: GPS屏幕显示真北向上Observatory: 观象台、天文台Offset: 偏移量Omnidirectional: 全向的、无定向的Orientation: 方位、方向、定位、倾向性、向东性Panel: 仪表盘、面板Panel-mount: 配电盘装配Parallel Channel Receiver: 并行通道接收机P-Code: P码Photocell: 光电管、光电池、光电元件Pinpoint: 极精确的、准确定位、准确测定、针尖Pixel: 象素Position: 位置Position Fix: 定位Position Format: 位置格式Power-on: 接通电源Pre-amplifier: 前置放大器Prime Meridian: 本初子午线Pseudo-Random Noise Code: 伪随机噪声码Pseudorange: 伪距Rack: 齿条、支架、座、导轨Resolution: 分辨率Route: 航线RS-232: 数据通信串口协议Radio Technical Commission for Maritime Services (RTCM): 航海无线电技术委员会,差分信号格式Selective Availability (SA): 选择可用性Sidetone: 侧音Source: 信号源、辐射体Space Segment: 空间部分Speed Over Ground (SOG): 对地航速Specifcation: 详述、说明书、规格、规范、特性Split Comm: 分瓣通信Squelch:静噪音、静噪电路、静噪抑制电路Statute Mile: 英里(1英里=1,609米)Straight Line Navigation: 直线导航Strobe: 闸门、起滤波作用、选通脉冲、读取脉冲TracBack - 按航迹返航Track-Up Display - 航向向上显示Track (TRK): 航向Transceiver:步话机、收发两用机Transponder: 雷达应答机、(卫星通讯的)转发器、脉冲转发机Transducer: 渔探用探头、传感器Triangulation: 三角测量True North: 真北Turn (TRN): 现时航向和目的地之间的夹角Two-way: 双向的、双路的、双通的Universal Time Coordinated (UTC): 世界协调时间Universal Transverse Mercator (UTM): 通用横轴墨卡托投影U.S.C.G.: 美国海岸警卫队User Interface: 用户自定义界面User Segment: 用户部分Velocity Made Good (VMG): 沿计划航线上的航速Viewing angles: 视角Waypoint: 航路点Wide Area Augmentation System (WAAS): 广域差分系统World Geodetic System - 1984(WGS-84): 1984年世界大地坐标系Windshield: 防风玻璃、防风罩Y-Code: 加密的P码Yoke: 架、座、轭、磁轭、磁头组、偏转线圈测量英语专用词汇MA-scope,MA型显示Mach number,马赫数machine code,机器代码machine intelligence,机器智能machine language,机器语言machine type rock ore densimeter,机械式岩矿密度仪macro analysis,常量分析macro instruction,宏指令macro-economic model,宏观经济模型macro-economic system,宏观经济系统macroassembly language,宏汇编语言magnet,磁铁magnet assembly,磁体magnet dynamic instrument,磁式动态仪器magnetic analyzer,磁分析器magnetic balance,磁秤magnetic card,磁卡magnetic core,磁心magnetic damper,磁性阻尼器magnetic deflection,磁偏转magnetic detector for lightning currents,闪电电流磁检示器magnetic disc,磁盘magnetic domain attachment,磁畴附件magnetic drum,磁鼓magnetic field,磁场magnetic field meter,磁场计magnetic field strength transducer[sensor],磁场强度传感器magnetic flaw detection ink,磁悬液magnetic flow transducer,磁性流量传感器magnetic flux transducer[sensor],磁通传感器magnetic grating displacement transducer,磁栅式位移传感器magnetic induced polariaxtion instrument,磁激电仪magnetic locator,磁定位器magnetic logger,磁测井仪magnetic oxygen transducer[sensor],磁式氧传感器magnetic particle,磁粉magnetic particle inspection,磁粉探伤机magnetic potentiometer,磁位计magnetic prospecting instrument,磁法勘探仪器magnetic(quantity)transducer[sensor],磁(学量)传感器magnetic resistivity instrument,磁电阻率仪magnetic resistor,磁敏电阻器magnetic rotaion comparison,磁旋比magnetic scale width meter[gauge],磁栅式宽度计magnetic screen[shield],磁屏蔽magnetic sensor,磁传感器magnetic separator,磁性分选仪magnetic storage,磁存储器magnetic susceptibility logger,磁化率测井仪magnetic tape,磁带magnetic tape unit,磁带机magnetic widn,磁风magnetization method,磁化方法magnetizer,充磁机magnetizing,磁化magnetizing assembly,磁化装置magnetizing coil,磁化线圈magnetizing current,磁化电流magnetizing time,磁化时间magneto electric balance,电磁天平magneto sensor,磁敏元件magnetoelastic effect,压磁效应magnetoelastic force transducer,磁弹性式力传感器magnetoelastic rolling force measuring instrument,磁弹性式轧制力测量仪magnetoelastic tensiometer,磁弹性式张力计magnetoelastic torque measuring instrument,磁弹性式转矩测量仪magnetoelastic torque transducer,磁弹性式转矩传感器magnetoelastic weighing cell,磁弹性式称重传感器magnetoelectric phase difference torque measuring instrument, 磁电相位差式转矩测量仪magnetoelectric phase difference torque transducer,磁电相位差林转矩传感器magnetoelectric tachometer,磁电式转速表magnetoelectric tachometric transducer,磁电式转速传感器magnetoelectric velocity measuring instrument,磁电工速度测量仪magnetoelectric velocity transducer,磁电式速度传感器magnetometer,磁强计;磁力仪magneto-optical effect magnetometer,磁阻磁强计magnetoresistive magentomenter,磁致伸缩磁力仪magnetostriction testing meter,磁致伸缩测试仪magnetostrictive transducer,磁致伸缩振动器magnetreater,磁处理机magentrol,磁放大器magnification,放大倍率magnitude-frequency characteristics,幅频特性magnitude margin,幅值裕度;幅值裕量magnitude-phase characteristics,幅相特性main axle of penetrator,压头主轴main storage,主存储器main valve,主阀maintainalbility,可维修性;可维护性;维修性;维修度maintenance,维修;维护maintenance test,维护试验major loop,主回路management decision,管理决策management information system(MIS),管理信息系统management level,管理级management science,管理科学manager,管理站Manchester encoding,曼彻斯特编码mandatory standard,强制性标准manipulated variable,操纵变量man-machice communication,人机通信man-machine coordination,人机控制man-machine coordination,人机协调man-machine interaction,人机交互man-machine interface,人机界面man-machine system,人机系统manned submersible,载人潜水器manometer,压力计manual control,手动控制manual data input programming,手动数据输入编程;人工数据输入编程manual operating device,手动装置manual operating mode,手动运转方式manual scanning,手动扫查manual station,手动操作器manufacturing automation protocol(MAP),制造自动化协议;生产自动化协议manufacturing message service(MMS),加工制造报文服务mapping,页面寻址;面分布图marine barometer,船用气压表marine digital seismic apparatus,海洋数字地震仪marine flux-gate magnetometer,海洋地球物理勘探marine gravimeter,海洋重力仪marine gravimeteric survey,海洋重力测量marine instrument,船用仪器仪表marine optical pumping magnetometer,海洋光泵磁力仪marine proton gradiometer,海洋质子梯度仪marine proton magnetometer,海洋质子磁力仪marine proton precession magnetometer,海洋质子磁力仪marine seismic prospectiong,海洋地震勘探marine seismic streamer,海洋地夺电缆;拖缆;漂浮电缆marine vibrating-string gravimeter,海洋振弦重力仪mark,标志mark of conformity,合格标志marking,标志marking of an instrument for explosive atmosphere,防爆仪表标志mass,质量mass absorption coefficient,质量吸收系数mass analyzed ion kinetic energy spectrometer(MIKES),质量分析离子动能谱仪mass analyzer,质量分析器mass centering,质量定心mass centering machine,质量定心机mass chromatography(MC),质量色谱法mass decade range,十倍质量程mass discrimination effect,质量歧视效应mass dispersion,质量色散mass flow computer,质量流量计算机mass flow-rate,质量流量mass flow rate senstive detector,质量流量敏感型检测器mass fragmentography(MF),质量碎片谱法mass indicator,质量指示器mass number,质量数mass peak,质量峰mass range,质量范围mass scanning,质量扫描mass spectrograph,质谱仪mass spectrometer,质谱计mass spectometric analysis,质谱法mass spectrometry(MS),质谱学;质谱法mass spectrometry-mass spectrometry(MS-MS),质谱-质谱法mass spectroscope,质谱仪器mass spectroscopy,质谱学mass spectrum,质谱mass-spring system,质量弹簧系统mass stability,质量稳定性mass storage,大容量存储器;海量存储器mass-to-charge ratio,质荷比master file,主文卷master/slave discrimination,主从鉴别;主副鉴别master station,主站master viscometer,标准粘度计material measure,实体量器material processibility,材料工艺性能material tesing machine,材料试验机mathematical model,数学模型mathematical similarity,数学相似mathematical simulation,数字仿真matrix correction,基本修正matrix effect,基体效应matrix printer,点阵印刷机;点阵打印机Mattauch-Herzog geometry(mass spectrograph),马-赫型双聚焦质谱法max allowable continuous working current,最大允许连续工作电流max deflection of linearity,最大线性偏转maximum acceleration,最大加速度maximum allowde deviation,最大允许扁差maximum ballistic scanning,最大冲击拂掠maximum capacity,最大称量maximum cyclic load,最大循环负荷maximum cyclic stress,最大循环应力maximum displacement,最大位移maximum excitation,最大激励maximum floating voltage,最大浮置电压maximum flow-rate,最大流量maximum load of the test,最大试验负荷maximum load of the testing machine,试验机最大负荷maximum operating pressure differential,最大工作压差maximum operationg water depth,最大工作(水)深度maximum output inductance,最大输出电感maximum output resistance,最大输出电阻maximum overshoot,最大超调量maximum peneration power,最大穿透力maximum power supply voltage,最高电源电压maximum principle,极大值原理;最大值原理maximum profit programming,最大利润规划maximum rated circumferential magnetizing current, 额定周向磁化电流;最大周向磁化电流maximum rated force under sinusoidal conditions,正弦态最大激振力maximum revolutions of output shaft,输出轴最大转数maximum scale value,标度终点值maximum sound pressure level of microphone,传声器最高声压级maximum strain,最大应变maximum temperature,最高温度maximum thermometer,最高温度计;最高温度表maximum transverse load,最大横向负荷maximum velocity,最大速度maximum wind speed,最大风速maximum working pressure(MWP),最大工作压力McLeod vacuum gauge,麦氏真空计mean availability,平均轴就流体速度mean dynamic pressure in a cross-section,横截面内的平均动压(mean) effective mavelength,(平均)有效波长mean flow-rate,平均流量mean life,平均寿命mean linear velocity of mobile phase,流动相平均线速mean load,平均负荷mean repair time(MRT),平均修理时间mean squared spectral density,均方谱密度mean strain,平均应变mean stress,平均应力mean time between failures(MTBF),平均失效间隔时间mean time to failure(MTTF),平均失效前时间mean time to restoration,平均体膨胀系数meantime auto-spectrometer,同时式自动光谱仪(measurable)quantity,(可测的)量measurand,被测量measured object,被测对象measured quantiry,被测量(measure)target,(被测)目标measured value,被测值measured variable,被测变量measurement,测量measurement hardware,测量硬件measurement of directional response pattern,指向性响应图案测量measurement of exciting force,激振力的测量measurement of vibration quantity,振动量的测量measurement procedure,测量步骤measurement signal,测量信号measurement standand,测量标准(器)measurement time,测量时间measuring amplifier,测量放大器measuring bridge,测量电桥measuring current transformer,测量用电流互感器measuring distance,测量距离measuring element(of an electro-mechanical measuring instrument), (电-机械测量仪表的)测量机构measuring equipment,测量装置;测量设备measuring hole,测量孔measuring indication system,测量指示装置measuring instrument,测量(仪器)仪表;测量器具measuring instrument with circuit control device,带有电路控制器件的测量仪表measuring junction,测量端区measuring microphone,测试传声器measuring plane,测量平面measuring point for the humidity,湿度测定点measuring point for the temperature,温度测定点(measuring)potentiometer,(测量)电位差计measuring range,测量范围measuring range higher limit,测量范围上限值measuring range lower limit,测量范围下限值measuring section,测量段measuring spark gap,测量球隙measuring system,测量系统measuring terminal,测量端measuring time,测量时间(measuring)transducer,(测量)传感器measuring transducer(with electrical output),(电量输出)测量变换器measuring voltage transformer,测量用电压互感器mechanical bathythermograph(MBT),机械式深温计mechanical hygrometer,机械湿度计mechanical impedance,机械阻抗mechanical properties,机械性能mechanical quantity,机械量mechanical quantity transducer[sensor],力学量传感器mechanical regulator,机械稳速器mechanical resonance,机械共振mechanical resonance frequency of the moving element,运动部件机械共振频率mechanical resonance frequency of the moving element suspension, 运动部件悬挂机械共振频率mechanical runout,机械脱出mechanical sensor,力敏元件mechanical shock,机械冲击mechanical strain,机械应变mechanical structure type transducer[sensor],结构型传感器mechanical test,机械性能试验mechanical testing machine,机械式试验机mechanical top-loading balance,机械式上皿天平mechanical vibration,(机械)振动mechanical vibrator,机械振动器mechanical vibraometer,机械测振仪mechanical zero,机械零位mechanical zero adjuxter,机械零位调节器mechanism model,机理模型medium temperature strain gauge,中温应变计(片)mel,美(音调的单位)melted quartz cqpacitor,熔融石英电容器melting heat,熔解热melting point,熔解点melting point type disposable fever thermeometer,熔点型消耗式温度计memory,存储器memory protection,存储保护Mendeleev weighing,门捷列夫称量法meniscus,弯月面menu selection mode,选单选择式;菜单选择式meroury barometer,水银气压表mercury drop amplitude,汞滴振幅mercury motor meter,水银电机式仪表mercury pool electrode,示池电极mercury thermoneter,水银温度表message,报文message mode,报文方式message switching,报文交换messenger,使锤metal base indicated electrode,金属基指示电极metal-ceramic X-ray tube,金属陶瓷X射线管metal-insoluble salt indicated electrode,金属-难溶盐指示电极metal-oxide gas transducer[sensor],金属氧化物气体传感器metal-oxide humidity transducer[sensor],金属氧化物湿度传感器metal-spring gravimeter,金属弹簧重力仪metallic material testing machine,金属材料试验机metallurgical automation,冶金自动化metastable dceomposition,亚稳分解metastable defocussing,亚稳去聚焦metastable ion,亚稳离子metastable scanning,亚稳扫描meteorograph,气象计meteorological instrument,气象仪器meteorological observation,气象观测meteorological radar,气象雷达meteorological rocket,气象火箭meteorological satellite,气象卫星meteorological tower,气象塔meter,计;表meter electrodes,测量电极meter flow-rate,仪表流量meter for testing constant current fluxreset curve,恒流磁通回归曲线测试仪meter tube(of an electromagnetic flowmeter),(电磁流量计的)测量管meter wheel,绳索记数器meter with maximum demand indicator,最大需量电度表meters(for the measurement of the volume of fluids),(测量流体体积的)仪表meters for measuring amplitude by a reading microscope,读数显微镜测振幅法method for measuring amplitude by a wedge gauge,量楔测振幅法method of coreection,校正方法method of electron diffraction,电子衍射法method of field emission microscope(FEM),场发射显微镜法method of field parameter measurement,场参数测量法meteod of instability,不稳定法method of least squqres,最小二乘方法method of measurement,测量方法method of modal balancing,振型平衡法method of spot parameter measurement,点参数测量法method standard,方法标准metrological performance,计量性能mica capacitor,云母电容器imcro adsorption detector,微量吸附检测器micro analysis,微量分析micro balance,微量天平micro coulometric detector,微库仑检测器microbarograph,微(气)压计microbarometer,微压表microcomputer,微(型)计算机microcomputer alternating current resistivity instrument,微机化交流电阻率仪器micro-computer field measuring system,微电脑野外检测系统microcomputer induced polarization instrument,微机激电仪micro-densitometer,微密度计micro-economic model,微观经济模型micro-economic system,微观经济系统micro-heat of adsorption detector,微量吸附热检测器micro-packed column,微填充柱microhardness number,显微硬度值micrometer,测微器micrometer checker,千分表检查仪microphone,传声器microphone calibration apparatus,传声器械校准仪microphone protection grid,传声器保护罩microphone response frequency,传声器共振频率microphone stand,传声器架microphone temperature coefficient,传声器温度系数microphotometer,测微光度计micropluviometer,微雨量器microtome,超薄切片机microwave,微波microwave detecton apparatus,微波检测仪microwave distance method,微波探伤法microwave distance meter,微波测距仪microwave hygroscope,微波测湿仪microwave plasma detector,微波等离子体检测器microwave radar,微波雷达microwave radiometer,微波辐射计microwave remote sensing,微波遥感micro-wave scatterometer,微波散射计microwave thickness meter,微波厚度计mid infrared range(MIR) remote sensing,中红外遥感minimum achievable residual unbalance,最小可达剩余不平衡量minimum cyclic load,最小循环应力minimum detectable leak,最小可检漏量minimum detectable partial pressure,最小可检分压强minimum flow-rate,最小流量minmum load of the testing machine,试验机最小负荷minimum operationg pressure differential,最小工作压差minimum phase system,最小相位系统minimum positioning time,最小定位时间minimum power supply voltage,最低电源电压minimum rate of benefit,最低收益率minimum reserve,最低储备iminmum risk estimation,最小风险估计minimum scale value,标度始点值minimum strain,最小应变minimum temperature,最低温度minimum thermometer,最低温度计;最低温度表minimum variance estimation,最小方差估计mining compass,矿山罗盘仪mirror dial,镜大幅度盘mirror telescope,反射望远镜mixing length,混合长度mixing ratio,混合比mobile phase,流动相mobile weather station,流动气象站mobile X-ray detection apparatus,移动式X射探伤机modal aggregation,模态集结modal control,模态控制modal matrix,模态矩阵modal transformation,模态变换mode of vibration,振型;振动模态mode shape,振形model,模型;型号model accuracy,模型精确度model analysis,模型分析model base(MB),模型库model base management system(MBMS),模型库管理系统model checking,模型置信度model coordination method,模型协调法model decomposition,模型分解model design,模型设计model evaluation,模型评价model experiment,模型实验model fidelity,模型逼真度model following control system,模型跟踪控制系统model following controller,模型跟踪控制器model loading,模型装载model modification,模型修改model of strain gauge,应变计[片]型式model reduction,模型降价model reduction method,模型降价法model reference adaptive control system,模型参考适应控制系统model reference control system,模型参考控制系统model simplification,模型简化model transformation,模型变换model validation,模型确认model variable,模型变量model verification,模型验证modeling,建模modern control theory,现代控制理论modern polarography,近代极谱法modifiability,可修改性modular programming,模块化程序设计modularity,组合性modularization,模块化modulation,调制modulation analysis,调制分析modulation sideband,调制边带modulator,调制器modulator-demodulator;modem,调制解调器module,模块modulus of elasticity,弹性模量moire fringe,莫尔条纹moire frenge grating,莫尔条纹光栅moisture content,含湿量;水汽含量moisture sensor,湿敏元件molecular absorption spectrometry,分子吸收光谱法molecular beam mass spectrometer,调制分子束质谱计molecular spectrum,分子光谱molecule ion,分子离子moment,分矩moment of pendulum,摆锤力矩monitoring,监视monitoring hardware,监视硬件monitoring program,监督程序monochromatic radiation,单色辐射monochromator,单色仪monocolour radiation,单色辐射monopole mass spectrometer,单极质谱计most economic control(MEC),最经济控制most economic observing(MEO),最经济观测mould growth test,长霉试验mould test chamber,霉菌试验箱mouldproof packaging,防霉包装mountain barometer,高山气压表mouse,鼠标器movable cross-beam,移动横梁movement,传动机构moving band interface,传送带接口moving coil,动圈moving ciol galvanometer,动圈式[磁电系]检流计moving-coil microphone,动圈传声器moving-conductor microphone,电动传声器moving element,运动部件;可动部分moiving-iron instrument,动铁式[电磁系)仪表moving-megnet galvanometer,动磁系振动子moving-magnet instrument,动磁式仪表moving point device,移点器moving-scale instrument,动标度尺式仪表moving table,滑台MS-MS scanning,质谱—质谱法扫描mud flow meter,泥浆流量计mud hydrometer,泥浆比重计mud logger,泥浆电阻仪mud lubrification meter,泥浆润滑性测定仪mud resistance meter,泥浆电阻仪mud sand content meter,泥浆含砂量测定仪mud wavter loss meter,泥浆失水量测定仪multi-axial strain gauge,多轴应变计multi band seismograph,多频带地震仪multichannel analyzer,多道分析器multichannel cross correlation,多通道互相关multi-channel logging truck,多线式自动测井仪;测井站multi-channel photo-recorder,多线照相记录仪multi-channel pulse height analyzer,多道脉冲高度分析仪multi-channel X-ray spectrometer,多道X射线光谱仪multi collectors mass spectrometer,多接收器质谱计multi-colour radiation thermometer,多色辐射温度计multi-colour thermometry,多色测温法multi-core type current transformer,多铁心型电流互感器multi crystal thermistor,多昌热敏电阻器multi-frequeny channel ground detector,多频道地电仪multi-runction(measuring)instrument,多功能(测量)仪表multi-function transducer[sensor],多功能传感器multi-idler belt conveyor scale,多托辊电子皮带秤multi-input multi-output control system;MIMO control system,多输入多输出控制系统multi-path diagonal-beam ultrasonic flowmeter,多声道斜束式超声流量计multi-plane balancing,多面平衡multi-objective decision,多目标决策multi-plate trim,多层叠板工节流组件multi-range(measuring)instrument,多范围(测量)仪表multi-rate meter,复费率电度表mulit-scale(measuring)instrument,多标度尺(测量)仪表mulit-stage accelerating electron gun,多极加速电子枪multistage flash distillation method for desalination,多级闪急蒸馏淡化法multi-step action,多位作用multi-step controller,多位控制器multi-turn electric actuator,多转电动执行机构multi-user simulation,多用户仿真multidimensional gas chromatograph,多维气相色谱仪multidimensional gas chromatography,多维气相色谱法multilayer control,多层控制multilayer system,多层系统multilevel computer control system,多级计算机控制系统multilevel control,多级控制multievel coordination,多级协调multilevel decision,多级决策multievel process,多级过程multilevel system,多级系统multilink,多链路multiloop control,多回路控制multiloop control system,多回路控制系统multiloop controller,多回路控制器multimeter,万用电表multiple channel recorder,多通道记录仪multiple echo method,多次反射法multiple-jet water meter,多注束水表multiple scattering event,多重散射过程multiple-sensor cross correlation,多传感器互相关multiple-speed floationg action,多速无定位作用multiple-speed floation controller,多速无定位控制器multiple step plug,多级阀芯multiple tide staff,群验潮杆;水尺组multiplex link,复用链路multiplexer,多路转换器;多路转接器multiplexing,多路复用multipoint connection,多点连接multipoint network,多点网络multipoint recorder,多点记录仪multiprocessing,多道处理;多处理机multiprogramming,多道程序设计multiprojecting plotter,多位投影测图仪multisegment model,多段模型multispectral camera,多光谱照相机multispectral scanner(MSS),多光谱扫描仪multistage decision process,多段决策过程multistate logic,多态逻辑multistratum control,多段控制multistratum system,多段系统multivariable control system,多变量控制系统。
Large high-frequency magnetoelectric response in laminated composites of piezoelectric ceramics,rare-earth iron alloys and polymerNing Cai,Ce-Wen Nan,a)Junyi Zhai,and Yuanhua LinState Key Laboratory of New Ceramics and Fine Processing,and Department of Materials Science and Engineering,Tsinghua University,Beijing 100084,People’s Republic of China͑Received 13November 2003;accepted 22March 2004;published online 20April 2004͒Multiferroic laminated composites consisting of lead-zirconate titanate ͑PZT ͒/polyvinyl-idene-fluoride ͑PVDF ͒and Tb–Dy–Fe alloy ͑Terfenol-D ͒/PVDF particulate composite layers,prepared by a simple hot-molding technique,are reported.In the laminated composites,the polymer PVDF is used just as a matrix binder.Our results demonstrate that the three-phase laminated composites exhibit remarkable magnetoelectric response especially at high frequency where an electromechanical resonance appears.The maximum magnetoelectric sensitivity of the laminated composites is as high as over 3000mV/cm Oe at the resonance frequency of around 100kHz.©2004American Institute of Physics.͓DOI:10.1063/1.1739277͔Multiferroic composites made by combining piezoelec-tric and magnetostrictive substances together have drawn significant interest in recent years due to their multifunction-ality and potential technological applications in sensors,transducers,and actuators.In particular,composites contain-ing a giant magnetostrictive rare-earth-iron alloy ͓e.g.,TbFe 2or Tb 1Ϫx Dy x Fe 2͑Terfenol-D ͔͒,such as both particulate composites and laminated composites of Terfenol-D and a piezoelectric polymer ͓e.g.,poly ͑vinylidene fluoride-trifluorethylene ͒copolymer P ͑VDF–TrFE ͔͒or a piezo-electric ceramic ͑e.g.,PZT ͒,have been recently predicted to exhibit a giant magnetoelectric ͑GME ͒effect which is about 102–103times larger than that in the known ME materials ͑e.g.,Cr 2O 3and ferrite/piezoelectric ceramic composites ͒.1Subsequently,the laminated Terfenol-D/PZT composite made by stacking and bonding together the PZT and Terfenol-D disks with silver epoxy 2and laminated Terfenol-D/PVDF composite made by gluing the polarized PVDF film on Terfenol-D disks with conductive epoxy 3have been most recently found to exhibit such a GME sensitivity as pre-dicted.More recently,the GME sensitivity has been ob-served in other laminated composites of Terfenol-D and pi-ezoelectric ceramics made by stacking method.4These potentially make such multiferroic composites particularly attractive for technological applications.However,the lami-nated composites are very brittle and their ME response strongly depends on the interfacial bonding between two layers by gluing together,and on the other hand,there is a high eddy current loss in conductive Terfenol-D disk above ϳ1kHz.To overcome these difficulties,in this letter we report a class of multiferroic,laminated composites of three-phases Terfenol-D/PZT/PVDF because of their low eddy current loss in the high frequency range and toughness.Our lami-nated composites were made by laminating the Terfenol-D/PVDF and the PZT/PVDF particulate composite layers and then simply hot molding these layers together.Such a simple hot-pressing procedure ensures a good interfacial bondingbetween composite layers,and the PVDF polymer in the laminated composites is used just as a matrix binder and thus can be replaced by other polymers.The three-phase lami-nated composites are found to exhibit larger ME effect than the simple,three-phase Terfenol-D/PZT-polymer particulate composites recently developed,5and particularly,a GME ef-fect at high frequency is observed in such laminated compos-ites.The Terfenol-D powder with particle size of about 50m was obtained by crushing bulk Terfenol-D single crystal in an argon atmosphere.The PZT powder with particle size of about 6m was synthesized by a conventional solid-state reaction procedure.PVDF was employed as a binder to bind these two components.PZT or Terfenol-D powders were first mixed with PVDF to get 50vol %PZT/PVDF or 50vol %Terfenol-D/PVDF mixtures,respectively.These mixed pow-ders were then set in a mold by turns of PZT/PVDF ͑denoted as P layer ͒,Terfenol-D/PVDF ͑T layer ͒and PZT/PVDF ͑P layer ͒.The samples with 15mm in diameter and about 2mm in thickness were obtained by hot pressing these three lami-nated layers of mixtures at 180°C and 10MPa for 30min.The laminated composite has a sandwich structure of P layer/T layer/P layer ͑abbreviated as the P –T –P compos-ite ͒,as shown in Fig.1.Also shown in Fig.1is a typicala ͒Electronic mail:cwnan@FIG.1.Schematic illustration and a typical micrograph of the fractured surface of the laminated P –T –P composites.APPLIED PHYSICS LETTERS VOLUME 84,NUMBER 183MAY 200435160003-6951/2004/84(18)/3516/3/$22.00©2004American Institute ofPhysics Downloaded 14 May 2010 to 202.103.241.2. Redistribution subject to AIP license or copyright; see /apl/copyright.jspscanning electron micrograph of the fractured surface of the P –T –P composite.A good interface bonding between the P layer and T layer could form by this hot-pressing procedure,and in each layer,active inorganic particles are randomly bonded with the PVDF polymer.The electrical measurements of the poled samples were performed as already described.5The output ME voltages E 3across the samples ͑along the polarization direction ͒were measured under a dc magnetic field up to 0.4T ͑4kOe ͒and a superimposed ac magnetic signal of about 2Oe amplitude with frequency varying from 100to 2ϫ105Hz.As the mag-netic field is parallel (H 3)or perpendicular (H 1)to the x 3axis ͑i.e.,the polarization direction ͒of the samples,the mea-surement gives the longitudinal ME sensitivity ␣E 33and transverse ME sensitivity,i.e.,␣E 33ϭdE 3/dH 3and ␣E 31ϭdE 3/dH 1.The dielectric constants 33͓see the inset of Fig.2͑b ͔͒of the laminated P –T –P composites decrease slightly with in-creasing frequency in the range measured,and demonstrate a resonance around 100kHz.This resonance is associated with the electromechanical resonance 6in the thin disk-shaped piezoelectric layer,since the polarized PZT ceramic disk-shaped pellet with such similar sizes also showed a fun-damental thickness electromechanical resonance 6at about 100kHz.The piezoelectric constant d 33measured for the three-phase laminated composites,increases from about 35to 50pC/N with increasing t p /L ͑the ratio of the P -layer thickness to the sample thickness ͒for these five samples.Figure 2shows the frequency dependence of the ME sensitivity of the laminated composites.In the low frequencyrange,the maximum longitudinal ME sensitivity ␣E 33and transverse ME sensitivity ␣E 31of the laminated composites are about 80mV/cm Oe at 4kOe and at 1.5kOe,respec-tively,which are comparable to those for the PZT/ferrite ce-ramic composites 7and higher than that for recently devel-oped three-phase Terfenol-D/PZT-PVDF particulatecomposites.5With increasing the frequency below about 60kHz,the ME sensitivity of the laminated composites very slightly increases but of particular interest is that both ␣E 33and ␣E 31of the composites demonstrate a peak at about 100kHz at which the electromechanical resonance ͓see Fig.2͑b ͔͒appears.The peak ME response is attributed to enhanced coupling elastic interaction between PZT/PVDF and Terfenol-D/PVDF composite layers at the electromechanical resonance.The maximum ␣E 33and ␣E 31values can reach up to as high as over 3000mV/cm Oe.This GME effect at high frequency is comparable to those observed at low frequency recently in the laminated Terfenol-D/PZT 2andTerfenol-FIG.3.ME sensitivity measured at high-frequency resonance for the lami-nated composites as a function of ͑a ͒and ͑b ͒the bias magnetic field and ͑c ͒t p /L.FIG.2.Frequency dependence of ͑a ͒the longitudinal ME sensitivity ␣E 33and ͑b ͒transverse ME sensitivity ␣E 31of the laminated composites;͑b ͒is frequency dependent of the dielectric constants measured for the laminated composites,showing an electromechanical resonance at about 100kHz.Downloaded 14 May 2010 to 202.103.241.2. Redistribution subject to AIP license or copyright; see /apl/copyright.jspD/PVDF3composites made by the sticking method,and demonstrates that the three-phase Terfenol-D/PZT/PVDF composites can be used for high frequency applications at least up to200kHz,since the problem of high eddy current loss for Terfenol-D over the high frequency range has been overcome in the composites.5,8␣E33and␣E31of the laminated composites illustrate dif-ferent dependence on the biasfield,as shown in Figs.3͑a͒and3͑b͒.␣E33increasesfirst rapidly with the biasfield,and slowly changes with the magneticfield in the high biasfield range where the effective magnetostriction approaches its saturation.␣E31nonmonotonically depends on the biasfield with a peak at about 1.5kOe.According to recent predictions,1the nonlinear ME response of the composites is closely related to the magnetostrictive behavior of Terfenol-D.The difference between␣E33and␣E31could be due to different magnetostrictions arising from the out-of-plane bias and in-plane bias in these anisotropic laminated composite samples.At high magneticfields,the magneto-striction gets saturated faster under the in-plane bias than the out-of-plane bias producing a nearly constant electricfield in the PZT,thereby decreasing␣E31with increasing biasfield.Figure3͑c͒shows that both␣E33and␣E31of the com-posites nonmonotonically depend on t p/L with a maximum ME sensitivity in the middle range of t p/L.Both␣E33and ␣E31of the compositesfirst increase with t p/L,which is attributed to the increase in the effective piezoelectric con-stant the composites with t p/L.However,with further in-creasing t p/L,the ME sensitivity declines after a maximum value,which is due to the reduction in magnetostrictively induced strain of the laminated composites with increasing t p/L,since much thinner T layer than the P layers leads to much lower magnetostrictively induced strain and thereby lower ME sensitivity of the composites.In conclusion,the multiferroic three-phase,laminated composites with a Terfenol-D/PVDF composite layer sand-wiched between two PZT/PVDF composite layers have been prepared via a simple hot-molding technique.Such a simple polymer-based composite hot-molding procedure leads to a good bonding between Terfenol-D and PZT,thus ensuring coupling interaction between magnetostriction and piezo-electricity.The three-phase laminated composites exhibit much larger ME effect than the simple,three-phase Terfenol-D/PZT-polymer particulate composites recently developed, and show a GME effect at high frequency at which the pi-ezoelectric resonance appears.The maximum ME sensitivity of the laminated composites can reach up to as high as over 3000mV/cm Oe at the resonance frequency of around100 kHz.The ME sensitivity of the laminated composites could be further improved by optimization of composites process-ing and geometry;and would be an important smart material for magnetic–electric devices.This work was supported by the Ministry of Sciences and Technology of China through the973-Project͑Grant No. 2002CB613303͒and the NSF of China͑Grant No.50232030 and50172026͒.1C.W.Nan,M.Li,X.Feng,and S.Yu,Appl.Phys.Lett.78,2527͑2001͒;C.W.Nan,M.Li,and J.H.Huang,Phys.Rev.B63,144415͑2001͒.2J.Ryu,S.Priya,A.V.Carazo,and K.Uchino,J.Am.Ceram.Soc.84, 2905͑2001͒.3K.Mori and M.Wuttig,Appl.Phys.Lett.81,100͑2002͒.4S.Dong,J.Li,and D.Viehland,Appl.Phys.Lett.83,2265͑2003͒.5C.W.Nan,L.Liu,N.Cai,J.Zhai,Y.Ye,Y.H.Lin,L.J.Dong,and C.X. Xiong,Appl.Phys.Lett.81,3831͑2002͒;C.W.Nan,N.Cai,L.Liu,J. Zhai,Y.Ye,and Y.H.Lin,J.Appl.Phys.94,5930͑2003͒.6IEEE Standard on Piezoelectricity,ANSI/IEEE Std.176,͑1987͒.7See,for example,J.Ryu,A.V.Carazo,K.Uchino,and H.E.Kim,J. Electroceram.7,17͑2001͒.8J.G.Wan,J.M.Liu,H.L.W.Chan,C.L.Choy,G.H.Wang,and C.W. Nan,J.Appl.Phys.93,9916͑2003͒.Downloaded 14 May 2010 to 202.103.241.2. Redistribution subject to AIP license or copyright; see /apl/copyright.jsp。