最优秀的同步整流驱动IC-UCC24610

(19)中华人民共和国国家知识产权局(12)发明专利申请(10)申请公布号 (43)申请公布日 (21)申请号 201710031283.X(22)申请日 2017.01.17(71)申请人 浙江大学地址 310058 浙江省杭州市西湖区余杭塘路866号(72)发明人 杨雁勇　王正仕　(74)专利代理机构 杭州求是专利事务所有限公司 33200代理人 万尾甜　韩介梅(51)Int.Cl.H02M 3/338(2006.01)H02M 3/335(2006.01)(54)发明名称一种基于GaN的高效率高功率密度隔离DC-DC变换电路(57)摘要本发明公开了一种基于GaN的高效率高功率密度隔离DC-DC变换电路，包括LLC半桥软开关、匝比N:1:1的变压器、滤波电容、Fly-back辅助电源电路、集成LLC控制UCC25600芯片电路、驱动UCC27714电路、光耦及输出反馈PI调节电路、PEM-2-S12-S5-D电压转换电路等，其中原边采用GaN器件GS66502B，副边采用GaN器件GS61004B并联同步整流；本发明将LLC谐振电路与同步整流进行结合，采用简单的控制和驱动电路以及辅助电源设计，实现了宽输入电压范围，恒定输出电压12V，200W的DC-DC变换，电路采用GaN开关器件，提高了变换器效率和功率密度。

权利要求书1页 说明书6页 附图2页CN 106712529 A 2017.05.24C N 106712529A1.基于GaN的高效率高功率密度隔离DC-DC变换电路，包括LLC半桥软开关、谐振电感、谐振电容、匝比N:1:1的变压器、及输出整流；其特征在于，所述的LLC半桥软开关采用GaN MOSFET半桥，采用GaN器件GS66502B，所述的输出整流采用GaN MOSFET并联同步整流，采用GaN器件GS61004B，该电路还包括滤波电容、Fly-back辅助电源电路、集成LLC控制UCC25600芯片电路、驱动UCC27714电路、光耦及输出反馈PI调节电路、PEM-2-S12-S5-D电压转换电路、UCC24610同步整流控制电路；滤波电容与GaNMOSFET半桥并联连接300-400V输入电压，UCC25600芯片采集谐振电流，其输出端连接UCC27714电路，UCC27714电路的两路输出各通过一个脉冲驱动变压器与GaNMOSFET半桥中的两个开关管栅极相连，Fly-back辅助电源电路从输入直流母线取电，用于将300-400V的输入电压转化为12V为原边芯片UCC25600和UCC27714供电，UCC24610芯片用于给GaNMOSFET并联同步整流电路提供驱动信号，PEM-2-S12-S5-D电压转换电路用于将原边的12V转化为5V为UCC24610芯片供电，基于431的输出反馈PI调节电路通过光耦反馈到原边控制芯片UCC25600。

TI UCC24610 90W LLC串联谐振电源转换器解决方案TI 公司的UCC24610是5V系统的绿色整流控制器，当采用单独电源时LLC输出可高达15V，工作频率高达600kHz，V DS MOSFET电流检测，能从轻负载和睡眠模式中同步叫醒，主要用在AC/DC 5V适配器，5V偏压电源，低压整流电路和反激和LLC转换器。

本文介绍了UCC24610主要特性，功能方框图，反激拓扑框图和LLC串联谐振转换器框图，以及变压器配置，自同步配置和电容配置的LLC串联谐振转换器电路图和相应的材料清单。

A 90-W, High-Efficiency, LLC Series-Resonant Converter with Secondary-Side Synchronous RectificationThe UCC24610 Green Rectifier Controller is optimized for 5-V systems and can be used for LLC outputs up to 15 V when a separate 5-V supply is available. Above 15 V the UCC24610 is limited by the 50-V maximum voltage rating of the VD pin. This is because in a conventional secondary rectifier arrangement, that employs two rectifiers with a center-tapped secondary winding, each rectifier sees a peak reverse voltage equal to twice the regulated output.The scope of this reference design guide is to describe the design and performance of a functional circuit that extends the application of the UCC24610 to systems with output voltages up to 30 V. This is achieved using an alternate topology for secondary rectification and addressing the design constraints that the topology presents. Two configurations are described for synchronizing the turn-off of each SR circuit using the gate-drive signals on the primary side of the converter.An area not addressed by this guide is electromagnetic compatibility (EMC). For most applications, EMI filter components are added so that the design meets applicable environmental and system compatibility requirements.To comply with EMC standards, components such as input and output filters are required to suppress electromagnetic interference (EMI).This GREEN Rectifier™ controller is a high-performance controller and driver for standard and logic-level N-channel MOSFET power devices used for low-voltage secondary-side synchronous rectification.The combination of controller and MOSFET emulates a near-ideal diode rectifier. Thissolution not only directly reduces power dissipation of the rectifier but also indirectly reduces primary-side losses as well, due to compounding of efficiency gains.Using drain-to-source voltage sensing, the UCC24610 is ideal for Flyback and LLC-Resonant power supplies but can also be used with other power architectures. The UCC24610 is optimized for output voltages from 4.5 V to 5.5 V, and is suitable for use with lower and higher output voltages as well.UCC24610主要特性：Secondary-Side Controller Optimized for 5-V SystemsUp to 600-kHz Operating FrequencyVDS MOSFET-Sensing1.6-ohm Sink,2.0-ohm Source Gate-Drive ImpedancesMicro-Power Sleep Current for 90+ DesignsAutomatic Light-Load ManagementSynchronous Wake-Up From Sleep and Light-Load ModesProtection Features on Programming InputsSYNC Input for CCM Operation20-ns Typical Turn-Off Propagation DelayImproved Efficiency and Design Flexibility Over Traditional Diode Solution May Be Biased Directly From 5-V OutputMinimal Component CountUCC24610应用：AC/DC 5-V Adapters5-V Bias SuppliesLow Voltage Rectification CircuitsFlyback and LLC Converters图1。

Power IntegrationsDesign Example ReportTitle21.7 W Power Supply using TOP246P Specification Input: 85 - 265 VAC Output: 48 V / 450 mA Application PoE AC AdapterAuthor Power Integrations Applications Department Document Number DER-97Date September 12, 2005 Revision1.0Summary and Features• Single Sided PC board• Reduced cost and component count • Eliminates two y-capacitors to ground• Eliminates secondary side common mode choke • Eliminates ground wire differential choke • High Efficiency (~ 80 %)• Lower Cost Transformer Construction – no sleeving termination required • Low EMI signature (both radiated and conducted emissions) •Built-in output short circuit protectionThe products and applications illustrated herein (including circuits external to the products and transformer construction) may be covered by one or more U.S. and foreign patents or potentially by pending U.S. and foreign patent applications assigned to Power Integrations. A complete list of Power Integrations’ patents may be found at .Table Of Contents1Introduction (3)2Power Supply Specification (4)3Schematic (5)4Circuit Operation (6)4.1General (6)4.2Description (6)5Bill of Materials (7)6Layout (9)7Transformer Design Spreadsheet (10)8Transformer Specification (13)9Performance (17)9.1Efficiency (17)9.2Regulation vs. Load (18)9.3Regulation vs. Line (19)9.4Raw Performance Data (20)10Waveforms (21)10.1Drain Current and Voltage (21)10.2Output Transient Load Response (22)10.3Output Ripple Voltage (23)10.4Switching Ripple (23)10.5Line Frequency Ripple (24)10.6Output Voltage Shutdown Profile (26)11Thermal Test (27)11.1Thermal Performance (27)12Conducted EMI (29)12.1Conducted EMI Performance (29)13Revision History (30)Important Notes:Although this board is designed to satisfy safety isolation requirements, the engineering prototype has not been agency approved. Therefore, all testing should be performed using an isolated source to provide power to the prototype board.Design Reports contain a power supply design specification, schematic, bill of materials, and transformer documentation. Performance data and typical operation characteristics are included. Typically only a single prototype has been built.1 IntroductionThis document is an engineering report describing a Power over Ethernet (PoE) power supply utilizing TOP246P. The power supply delivers 21.7 W continuous from an input of 85 to 265 VAC.This document provides complete design information including specification, schematic, bill of material and transformer design and construction information. The document also provides performance information.Figure 1 – Circuit Board - Top ViewFigure 2 – Circuit Board - Bottom View2 Power Supply SpecificationDescriptionSymbolMinTypMaxUnitsCommentInputVoltage V IN 85 265 VACOutputOutput Voltage 1V OUT1 47.52 48 48.48 V ± 1% Output Ripple Voltage 1 V RIPPLE1 480 mVp-p 20 MHz bandwidthOutput Current 1 I OUT1 0 450 mA Power Down Holdup115 VAC T H(115VAC) 18 ms 230 VACT H(230VAC)60 msTotal Output PowerAverage Output Power P OUT121.7 WFull Load Efficiency η 80 % EnvironmentalConducted EMIMeets CISPR22B / EN55022BSafety Designed to meet IEC950, UL1950Class IIAmbient Temperature T AMB 0 40 oCForced airflow3 Schematic Figure 3 – Schematic4 Circuit Operation4.1 GeneralThe power supply uses a TOP246P device (U2), with integrated MOSFET and controller, in an isolated flyback configuration. The circuit also uses the x-pin programmable current limit feature control the overload power of the power supply and also to minimize transformer size.4.2 DescriptionThe input fuse F1 protects the supply against catastrophic failure. Thermistor RT1 limits the in-rush current during power-up. Diodes D5 – D8 implement a bridge rectifier to rectify the input mains voltage. Capacitor C22 attenuates the EMI generated by the input bridge diodes D5-D8.Inductor L1 is used to attenuate both differential and common mode EMI noise from the power supply. A large value is used to also prevent any noise filtering through from networks connector to the power supply output. Capacitor C2 forms part of the EMI solution by shunting EMI signals generated across the transformer T2. Capacitor C4 decouples the rectified input voltage providing a DC-bus. Resistor R14 programs the current limit of the TOPSwitch-GX (U2). Resistors R6 and R9 modified this current limit with input voltage, to maintain a relatively flat output overload profile. Diode D2, R2, C1 and R1 implement an RCD clamp circuit to limit the leakage inductance spike on the TOPSwitch-GX Drain pin. Diode D3 and C8 implement a bias voltage supply to provide operating power to the TOPSwitch-GX with integrated PWM, controller and main switching MOSFET. Capacitors C13 and C14 provide device decoupling with C14 also programming the startup and auto-restart period of the device. Resistor R13 provides feedback compensation in conjunction with C14. The inductance of transformer T2 provides the energy storage and conversion component of the circuit. Resistor R41 feeds current to an indicator LED U6, which is illuminated during normal operation.The 48 V output is rectified and filtered by diodes D1 and D4 and capacitors C5 with C7 provided output decoupling. Resistor R18 and C21 snub high frequency ringing on these diodes. Resistors R8 and R15 sense the output voltage providing the input signal for the TL431 (U3) reference. Resistor R41 provides DC bias current (approx. 1 mA) to the U3. Components R12 and C12 provide compensation for U3, to make sure that it’s frequency response is limited only to low-frequency signals. Resistor R10 programs the high-frequency gain of the control loop and with opto-diode U5A transmits the feedback signal. Resistor R42 and C15 provide increase the high frequency gain of the feedback circuit to improve output ripple rejection. Zener diode VR1 is used due to the high 48 V output voltage and drops approximately 30 V, to bring the TL431 collector voltage comfortably within safe levels (i.e. less than 30 V). Opto-transistor U5B feeds the control signal back to the TOPSwitch-GX.5 Bill of MaterialsItem Qty. Ref. Description Mfg Part Number Mfg1 1 C1 4.7 nF, 1 kV, Thru Hole, Disc Ceramic 5GAD47 Vishay/Sprague2 1 C2 2.2 nF, Ceramic, Y1 440LD22 Vishay3 1 C4 47 uF, 400 V, Electrolytic, Low ESR, 730mOhm, (16 x 25)KMX400VB47RM16X25LL UnitedChemi-Con4 1 C5 180 uF, 63, Electrolytic, Low ESR, 145mOhm, (10 x 20) LXZ63VB181MJ20LL United Chemi-Con5 1 C7 68 uF, 63, Electrolytic, Low ESR, 340mOhm, (8 x 12) LXZ63VB68RMH15LL United Chemi-Con6 1 C8 10 uF, 50 V, Electrolytic, Gen. Purpose, (5 x11)KME50VB10RM5X11LL UnitedChemi-Con7 2 C12 C15 1.0 uF, 50 V, Ceramic, Z5U ECU-S1H105MEB Panasonic8 1 C13 100 nF, 50 V, Ceramic, X7R ECU-S1H104KBB Panasonic9 1 C14 47 uF, 16 V, Electrolytic, Low ESR, 500mOhm, (5 x 11.5) LXZ16VB47RME11LL United Chemi-Con10 1 C21 100 pF, 1 kV, Disc Ceramic NCD101K1KVY5F NIC Components Corp11 1 C22 47 nF, 275 VAC, Film, X2 ECQU2A473ML Panasonic12 2 D1 D4 100 V, 1 A, Schottky, DO-41 SB1100 Fairchild13 1 D2 1000 V, 1 A, Rectifier, Glass Passivated, 2us, DO-41 1N4007GP Vishay14 1 D3 75 V, 300 mA, Fast Switching, DO-35 1N4148 Vishay15 2 D5 D6 600 V, 1 A, Ultrafast Recovery, 75 ns, DO-41 UF4005Vishay16 2 D7 D8 600 V, 1 A, Rectifier, DO-41 1N4005 Vishay17 1 F1 1 A, 250V, Slow, TR5 3,721,100,041 Wickman18 1 J4 AC Input Receptacle and Accessory Plug,PCBM 161-R301SN13Kobiconn19 2 J5 J6 R/A, RJ45 Nonshielded, PCBM RJHS-5080 Amphenol Canada20 1 L1 19 mH, 0.5 A, Common Mode Choke ELF15N005A Panasonic21 1 L2 3.3 uH, 2.66 A 822LY-3R3M Toko22 1 R1 100 k, 5%, 1 W, Metal Oxide RSF100JB-100K Yageo23 1 R2 47 R, 5%, 1/2 W, Carbon Film CFR-50JB-47R Yageo24 1 R6 3 M, 5%, 1/8 W, Carbon Film CFR-12JB-3M0 Yageo25 1 R8 182 k, 1%, 1/4 W, Metal Film MFR-25FBF-182K Yageo26 1 R9 2.7 M, 5%, 1/8 W, Carbon Film CFR-12JB-2M7 Yageo27 1 R10 3.3 k, 5%, 1/8 W, Carbon Film CFR-12JB-3K3 Yageo28 2 R12 R40 1 k, 5%, 1/8 W, Carbon Film CFR-12JB-1K0 Yageo29 1 R13 6.8 R, 5%, 1/8 W, Carbon Film CFR-12JB-6R8 Yageo30 1 R14 9.09 k, 1%, 1/4 W, Metal Film MFR-25FBF-9K09 Yageo31 1 R15 10 k, 1%, 1/4 W, Metal Film MFR-25FBF-10K0 Yageo32 1 R18 10 R, 5%, 1/4 W, Carbon Film CFR-25JB-10R Yageo33 1 R41 2 k, 5%, 1/8 W, Carbon Film CFR-12JB-2K0 Yageo34 1 R42 330 R, 5%, 1/8 W, Carbon Film CFR-12JB-330R Yageo35 1 RT1 NTC Thermistor, 30 Ohms, 1.5 A CL210 Thermometrics36 1 T2 Bobbin, EEL25.4, Horizontal, 10 pins YW-236-03B Yih-Hwa Enterprises37 1 U2 TOPSwitch-GX, TOP246P, DIP-8B TOP246P Power Integrations38 1 U3 2.495 V Shunt Regulator IC, 2%, 0 to 70C,TO-92 TL431CLPTexasInstruments39 1 U5 Opto coupler, 35 V, CTR 300-600%, 4-DIP ISP817D, PC817X4 Isocom, Sharp40 1 U6 LED, Green, 5 mm, 565 nm, 30 mcd SSL-LX5093GD Lumex Opto41 1 VR1 30 V, 5%, 500 mW, DO-35 1N5256B Microsemi47 Total6 Layout7 Transformer Design SpreadsheetACDC_TOPSwitchGX_020 105; Rev.2.5; Copyright Power Integrations 2005 INPUT INFO OUTPUT UNIT TOP_GX_FX_020105.xls: TOPSwitch-GX/FXContinuous/Discontinuous FlybackTransformer Design SpreadsheetENTER APPLICATION VARIABLES CustomerVACMIN 85 VoltsVACMAX 265 Volts Maximum AC Input VoltagefL 50 Hertz AC Mains FrequencyVO 48 Volts Output Voltage (main)PO 21.7 Watts Output Powern 0.86 Efficiency EstimateZ 0.44 Loss Allocation FactorVB 12 Volts Bias VoltagetC 2.66 mSeconds Bridge Rectifier Conduction Time Estimate CIN 47 uFarads Input Filter CapacitorENTER TOPSWITCH-GX VARIABLESTOP-GX top246p Universal 115 Doubled/230VChosen Device TOP246P PowerOut26W 34WKI 0.78 External Ilimit reduction factor (KI=1.0 fordefault ILIMIT, KI <1.0 for lower ILIMIT) ILIMITMIN 0.948 Amps Use 1% resistor in setting external ILIMIT.Assumes 0.85 derating at 100 degrees Celsius ILIMITMAX 1.158 Amps Use 1% resistor in setting external ILIMIT Frequency (F)=132kHz,(H)=66kHzF Full (F) frequency option - 132kHzfS 132000 Hertz TOPSwitch-GX Switching Frequency: Choosebetween 132 kHz and 66 kHzfSmin 124000 Hertz TOPSwitch-GX Minimum Switching Frequency fSmax 140000 Hertz TOPSwitch-GX Maximum Switching Frequency VOR 90 Volts Reflected Output VoltageVDS 2 Volts TOPSwitch on-state Drain to Source Voltage VD 1 Volts Output Winding Diode Forward Voltage Drop VDB 0.7 Volts Bias Winding Diode Forward Voltage DropKP 0.68 Ripple to Peak Current Ratio (0.4 < KRP < 1.0: 1.0< KDP<6.0)ENTER TRANSFORMER CORE/CONSTRUCTION VARIABLESCore Type eel25Core EEL25 P/N: PC40EE25.4/32/6.4-ZBobbin EEL25_BOBBINP/N: *AE 0.404 cm^2 Core Effective Cross Sectional AreaLE 7.34 cm Core Effective Path LengthAL 1420 nH/T^2 Ungapped Core Effective InductanceBW 22.3 mm Bobbin Physical Winding WidthM 3 mm Safety Margin Width (Half the Primary toSecondary Creepage Distance)L 1 Number of Primary LayersNS 21 Number of Secondary TurnsDC INPUT VOLTAGE PARAMETERSVMIN 81 Volts Minimum DC Input VoltageVMAX 375 Volts Maximum DC Input VoltageCURRENT WAVEFORM SHAPE PARAMETERSDMAX 0.53 Maximum Duty CycleIAVG 0.31 Amps Average Primary CurrentIP 0.89 Amps Peak Primary CurrentIR 0.60 Amps Primary Ripple CurrentIRMS 0.45 Amps Primary RMS CurrentTRANSFORMER PRIMARY DESIGN PARAMETERSLP 532 uHenries Primary InductanceNP 39 Primary Winding Number of TurnsNB 5 Bias Winding Number of TurnsALG 358 nH/T^2 Gapped Core Effective InductanceBM 3027 Gauss Maximum Flux Density at PO, VMIN(BM<3000)BP 3957 Gauss Peak Flux Density (BP<4200)BAC 1029 Gauss AC Flux Density for Core Loss Curves (0.5 XPeak to Peak)ur 2053 Relative Permeability of Ungapped CoreLG 0.11 mm Gap Length (Lg > 0.1 mm)BWE 16.3 mm Effective Bobbin WidthOD 0.42 mm Maximum Primary Wire Diameter includinginsulationINS 0.06 mm Estimated Total Insulation Thickness (= 2 * filmthickness)DIA 0.36 mm Bare conductor diameterAWG 28 AWG Primary Wire Gauge (Rounded to next smallerstandard AWG value)CM 161 Cmils Bare conductor effective area in circular mils CMA 362 Cmils/Amp Primary Winding Current Capacity (200 < CMA< 500)TRANSFORMER SECONDARY DESIGN PARAMETERS (SINGLE OUTPUT EQUIVALENT)Lumped parametersISP 1.63 Amps Peak Secondary CurrentISRMS 0.77 Amps Secondary RMS CurrentIO 0.45 Amps Power Supply Output CurrentIRIPPLE 0.62 Amps Output Capacitor RMS Ripple CurrentCMS 153 Cmils Secondary Bare Conductor minimum circularmilsAWGS 28 AWG Secondary Wire Gauge (Rounded up to nextlarger standard AWG value)DIAS 0.32 mm Secondary Minimum Bare Conductor Diameter ODS 0.78 mm Secondary Maximum Outside Diameter forTriple Insulated WireINSS 0.23 mm Maximum Secondary Insulation Wall Thickness VOLTAGE STRESS PARAMETERSVDRAIN 584 Volts Maximum Drain Voltage Estimate (IncludesEffect of Leakage Inductance)PIVS 252 Volts Output Rectifier Maximum Peak InverseVoltagePIVB 65 Volts Bias Rectifier Maximum Peak Inverse Voltage TRANSFORMER SECONDARY DESIGN PARAMETERS (MULTIPLE OUTPUTS)1st outputVO1 48 Volts Output VoltageAmps Output DC CurrentIO1 0.4520833333PO1 21.70 Watts Output PowerVD1 1 Volts Output Diode Forward Voltage DropNS1 21.00 Output Winding Number of TurnsISRMS1 0.766 Amps Output Winding RMS CurrentIRIPPLE1 0.62 Amps Output Capacitor RMS Ripple CurrentPIVS1 252 Volts Output Rectifier Maximum Peak InverseVoltageCMS1 153 Cmils Output Winding Bare Conductor minimumcircular milsAWGS1 28 AWG Wire Gauge (Rounded up to next largerstandard AWG value)DIAS1 0.32 mm Minimum Bare Conductor DiameterODS1 0.78 mm Maximum Outside Diameter for Triple InsulatedWire2nd outputVO2 Volts Output VoltageIO2 Amps Output DC CurrentPO2 0.00 Watts Output PowerVD2 Volts Output Diode Forward Voltage DropNS2 0.00 Output Winding Number of TurnsISRMS2 0.000 Amps Output Winding RMS CurrentIRIPPLE2 0.00 Amps Output Capacitor RMS Ripple CurrentPIVS2 0 Volts Output Rectifier Maximum Peak InverseVoltageCMS2 0 Cmils Output Winding Bare Conductor minimumcircular milsAWGS2 N/A AWG Wire Gauge (Rounded up to next largerstandard AWG value)DIAS2 N/A mm Minimum Bare Conductor DiameterODS2 N/A mm Maximum Outside Diameter for Triple InsulatedWire3rd outputVO3 Volts Output VoltageIO3 Amps Output DC CurrentPO3 0.00 Watts Output PowerVD3 Volts Output Diode Forward Voltage DropNS3 0.00 Output Winding Number of TurnsISRMS3 0.000 Amps Output Winding RMS CurrentIRIPPLE3 0.00 Amps Output Capacitor RMS Ripple CurrentPIVS3 0 Volts Output Rectifier Maximum Peak InverseVoltageCMS3 0 Cmils Output Winding Bare Conductor minimumcircular milsAWGS3 N/A AWG Wire Gauge (Rounded up to next largerstandard AWG value)DIAS3 N/A mm Minimum Bare Conductor DiameterODS3 N/A mm Maximum Outside Diameter for Triple InsulatedWireTotal power 21.7 Watts Total Power for Multi-output sectionNegative Output N/A If negative output exists enter Output number;eg: If VO2 is negative output, enter 28 Transformer SpecificationTransformer ConstructionElectrical DiagramWinding OrderCore InformationCore Type eel25Core Material NC-2H or Equivalent Estimated Gap length, mm 0.110Gapped Effective Inductance, nH/t^2 358Primary Inductance, uH 532Bobbin Information (Manual Input)Bobbin Reference Generic, 5 pri. + 5 sec.Bobbin Orientation HorizontalNumber of Primary pins 5Number of Secondary pins 5Margin on Left, mm 3.0Margin on Right, mm 3.0Primary Winding (Manual Input)1 Parameter Section Number of Turns 39Wire Size, AWG 28Filar 1Layers 0.88Start Pin(s) 5Termination Pin(s) 3BIAS Winding (Manual Input)Parameter Value Number of Turns 6Wire Size, AWG 28Filar 1Layers 0.13Start Pin(s) 1Termination Pin(s) 2Shield InformationParameter Primary Cancellation Number of Turns 20 22Wire Size, AWG 28 28Filar 2 2Layers 0.90 0.99Start Pin(s) NC 3,4Termination Pin(s) 3,4 NCSecondary Winding (Manual Input)1 Parameter Output Spec Voltage, V 48.00Spec Current, A 0.45Actual Voltage, V 48.00Number of Turns 21Wire Size, AWG 28Filar 2Layers 0.94Start Pin(s) 6Termination Pin(s) 7Winding InstructionUse 3.0 mm margin (item [3]) on the left side. Use 3.0 mm margin (item [3]) on the rightside.Cancellation Shield WindingStart on pin(s) 3,4 and wind 22 turns (x 2 filar) of item [6]. in exactly 1 layer. Leave thisend of cancellation shield winding not connected. Bend the end 90 deg and cut the wire inthe middle of the bobbin.Add 1 layer of tape, item [4], to secure the winding in place.Primary WindingStart on pin(s) 5 and wind 39 turns of item [6] in 1.00 layer(s) from left to right. Finishwinding on pin(s) 3.Add 1 layer of tape, item [4], for insulation.Bias WindingStart on pin(s) 1 and wind 6.0 turns (x 1 filar) of item [6]. Spread the winding evenlyacross entire bobbin. Finish on pin(s) 2.Add 1 layer of tape, item [4], for insulation.Primary Balanced Shield WindingStart on any (temp) pin on the secondary side and wind 20 turns (x 2 filar) of item [6].Spread the winding evenly across entire bobbin. Finish this winding on pin(s) 3,4.Cut out wire connected to temp pin on secondary side. Leave this end of primary shieldwinding not connected. Bend the end 90 deg and cut the wire in the middle of the bobbin.Add 3 layers of tape, item [4], for insulation.Secondary WindingStart on pin(s) 6 and wind 21 turns (x 2 filar) of item [6]. Spread the winding evenlyacross entire bobbin. Finish on pin(s) 7.Add 2 layers of tape, item [4], for insulation.Core AssemblyAssemble and secure core halves. Item [1].VarnishDip varnish uniformly in item [5]. Do not vacuum impregnate.Comments1. Pins 8 through 10 on the secondary side are not connected to anyelectrical node.2. Pins 3 and 4 should be electrically connectedMaterialsItem Description [1] Core: eel25, NC-2H or Equivalent,gapped for ALG of 358 nH/t^2[2] Bobbin: Generic, 5 pri. + 5 sec.[3] Tape: Polyester web 3.0 mm wide[4] Barrier Tape: Polyester film 22.30 mmwide[5] Varnish[6] Magnet Wire: 28 AWG, SolderableDouble CoatedElectrical Test SpecificationsParameter Condition Spec Electrical Strength, VAC 60 Hz 1 minute, from pins3 - 5 to pins 6 - 10.3000Nominal Primary Inductance, uH Measured at 1 V pk-pk,typical switchingfrequency, between pin 3to pin 5, with all otherWindings open.586 +/- 10%Primary Leakage, uH Measured between Pin 3to Pin 5, with all otherWindings shorted.17.57 Goal9 Performance 9.1 EfficiencyFigure 6 – Output Regulation vs. Output Load, Room TemperatureFigure 7 – Output Regulation vs. Input Line Voltage, Room Temperature9.4 Raw Performance DataLoad was applied at the end of a 1 ft long Ethernet cable connected to the connector J6. The load was applied using an electronic load. The output voltage was measurement at the end of this cable.10 Waveforms10.1 Drain Current and VoltageFigure 8 – 85 VAC, full loadUpper Ch3: Drain Voltage 100 V, Lowr Ch4: Drain Current 0.5 A / Div, 2 µs / divFigure 9 – 115 VAC, full loadUpper Ch3: Drain Voltage 100 V, Lowr Ch4: Drain Current 0.5 A / Div, 2 µs / divFigure 10 – 230 VAC, full loadUpper Ch3: Drain Voltage 200 V, Lowr Ch4: Drain Current 0.5 A / Div, 2 µs / divFigure 11 – 265 VAC, full loadUpper Ch3: Drain Voltage 200 V, Lowr Ch4: Drain Current 0.5 A / Div, 2 µs / div10.2 Output Transient Load ResponseFigure 12 – 115 VAC, (48 V 0.23 A to 0.45 A step)48 V Output Voltage 200 mV / Div, 5 ms / divFigure 13 – 230 VAC, (48 V 0.23 A to 0.45 A step)48 V Output Voltage 200 mV / Div, 5 ms / div10.3 Output Ripple VoltageIt can be seen from the waveforms below that the power supply comfortably meets the output ripple specifications. This is possible even without the need for an output inductor.Measurements made at the end of an Ethernet cable connected to J6. The voltage measurement included a 0.1 uF ceramic capacitor in parallel with a 1 uF / 50 V electrolytic capacitor, at point of measurement (end of the cable).10.4 Switching RippleFigure 14 – 85 VAC, Full LoadCH1: 48 V Output Ripple, 200 mV, CH3: Drain Voltage, 200 V, 5 µs / divFigure 15 – 115 VAC, Full LoadCH1: 48 V Output Ripple, 200 mV, CH3: Drain Voltage, 200 V, 5 µs / divFigure 16 – 230 VAC, Full LoadCH1: 48 V Output Ripple, 200 mV,CH3: Drain Voltage, 200 V, 5µs / divFigure 17 – 265 VAC, Full LoadCH1: 48 V Output Ripple, 200 mV, CH3: Drain Voltage, 200 V, 5 µs / div10.5 Line Frequency RippleFigure 18 – 85 VAC, Full LoadCH1: 48 V Output Ripple, 200 mV, CH3: Drain Voltage, 200 V, 5 ms / divFigure 19 – 115 VAC, Full LoadCH1: 48 V Output Ripple, 200 mV, CH3: Drain Voltage, 200 V, 5 ms / divFigure 20 – 230 VAC, Full LoadCH1: 48 V Output Ripple, 200 mV,CH3: Drain Voltage, 200 V,5 ms / div Figure 21 – 265 VAC, Full LoadCH1: 48 V Output Ripple, 200 mV,CH3: Drain Voltage, 200 V,5 ms / div10.6 Output Voltage Shutdown ProfileThe results below show that the power supply comfortably meets the power-supply hold-up requirements of the specification.Figure 22 – Shutdown Profile at Full Load, 120 VACUpper Ch1: 48 V output, 10 V / div,Lower Ch3: Bus Voltage 100 V / div,20 ms / div.Figure 23 – Shutdown Profile at Full Load, 120 VACUpper Ch1: 48 V output, 10 V / div,Lower Ch3: Bus Voltage 100 V / div,20 ms / div.11 Thermal TestThe thermal measurements were made at 85 VAC (which corresponds to the worst case efficiency of the power supply). Ambient temperature of the oven was 40’C. The power supply was connected to an electronic load (external to the chamber). A cardboard box was used around the power supply to prevent significant airflow. The whole setup was saturated at 40’C for an hour before beginning measurements.11.1 Thermal PerformanceFigure 24 – Thermal Performance of Key Power Supply ComponentsDelta Ch2Ch3Ch4Ch5 Time Amb1D1TOP246P CASE 0.140404040 0.940525540 140575941 240617043 440657345 841728751 1642829960 32438310564 64438510765 128438510765Figure 25 – Raw Test Data12 Conducted EMIThe EMI was tested with and without the output connected to earth-ground. Load was connected through an Ethernet cable to a resistive load (100 ohms). 12.1Conducted EMI PerformanceFigure 26 – 115 VAC - N1 - grounded output - full-loadFigure 27 – 115 VAC - L1 - grounded output - full-loadFigure 28 – 230 VAC - N1 – grounded output - full-loadFigure 29 – 230 VAC - L1 – grounded output - full-load13 Revision HistoryDate Author Revision Description & changes Reviewed September 12, 2005 RM 1.0 First Release VC / AMDER-97 21.7 W PoE Adapter September 12, 2005Page 31 of 31Power Integrations Tel: +1 408 414 9200 Fax: +1 408 414 9201For the latest updates, visit our Web site:Power Integrations may make changes to its products at any time. Power Integrations has no liability arising from your use of any information, device or circuit described herein nor does it convey any license under its patent rights or the rights of others. POWER INTEGRATIONS MAKES NO WARRANTIES HEREIN AND SPECIFICALLY DISCLAIMS ALL WARRANTIES INCLUDING, WITHOUT LIMITATION, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIGHTS.PATENT INFORMATIONThe products and applications illustrated herein (including circuits external to the products and transformer construction) may be covered by one or more U.S. and foreign patents or potentially by pending U.S. and foreign patent applications assigned to Power Integrations. A complete list of Power Integrations’ patents may be found at .The PI Logo, TOPSwitch,TinySwitch,LinkSwitch,and EcoSmart are registered trademarks of Power Integrations. PI Expert and DPA-Switch are trademarks of Power Integrations.© Copyright 2004, Power Integrations.。

TOSHIBA BiCD Integrated Circuit Silicon MonolithicTB67S109AFNAG CLOCK-in controlled Bipolar Stepping Motor Driver・・・・・・・・・・・・Pin assignment (TB67S109AFNAG)Please mount the exposed pad of the HSSOP package to heatsink .TB67S109A Block diagramFunctional blocks/circuits/constants in the block chart etc. may be omitted or simplified for explanatory purposes.Application NotesAll the grounding wires of the TB67S109A must run on the solder mask on the PCB and be externally terminated at only one point. Also, a grounding method should be considered for efficient heat dissipation.Careful attention should be paid to the layout of the output, VDD(VM) and GND traces, to avoid short circuits across output pins or to the power supply or ground. If such a short circuit occurs, the device may be permanently damaged.Also, the utmost care should be taken for pattern designing and implementation of the device since it has power supply pins (VM, RS, OUT, GND) through which a particularly large current may run. If these pins are wired incorrectly, an operation error may occur or the device may be destroyed.The logic input pins must also be wired correctly. Otherwise, the device may be damaged owing to a current running through the IC that is larger than the specified current.Pin explanations TB67S109AFNAGINPUT/OUTPUT equivalent circuit (TB67S109A)The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes.Function explanation (Stepping motor)CLK FunctionEach up-edge of the CLK signal will shift the motor’s electrical angle per step.ENABLE functionis recommended.Step resolution setting and initial angle [Full step resolution][Half step resolution (Type B)]MO output shown in the timing chart is when the MO pin is pulled up. Timing charts may be simplified for explanatory purpose.MO output shown in the timing chart is when the MO pin is pulled up. Timing charts may be simplified for explanatory purpose. CWCCWStep setting and current percentageLO(Error detect signal) output functionWhen Thermal shutdown(TSD) or Over-current shutdown(ISD) is applied, the LO voltage will be switched to Low(GND) level.Decay functionADMD(Advanced Dynamic Mixed Decay) constant current controlThe Advanced Dynamic Mixed Decay threshold, which determines the current ripple level during current feedback control, is a unique value.fchopADMDth (Advanced Dynamic Mixed Decay threshold) Timing charts may be simplified for explanatory purpose.ADMD current waveform・When the next current step is higher :・mode.・When the next current step is lower :・OSCOutput transistor function modeVM VM VMCalculation of the Predefined Output CurrentFor PWM constant-current control, this IC uses a clock generated by the OSCM oscillator.The peak output current (Setting current value) can be set via the current-sensing resistor (RS) and the referencevoltage (Vref), as follows:Iout(max) = Vref(gain) ×Vref(gain) : the Vref decay rate is 1/ 5.0 (typ.)For example : In the case of a 100% setupwhen Vref = 3.0 V, Torque=100%,RS=0.51Ω, the motor constant current (Setting current value) will becalculated as:I out = 3.0V / 5.0 / 0.51Ω= 1.18 ACalculation of the OSCM oscillation frequency (chopper reference frequency)An approximation of the OSCM oscillation frequency (fOSCM) and chopper frequency (fchop)can be calculated by the following expressions.fOSCM=1/[0.56x{Cx(R1+500)}]………C,R1: External components for OSCM (C=270pF , R1=5.1kΩ => About fOSCM= 1.12MHz(Typ.)) fchop = fOSCM / 16………fOSCM=1.12MHz => fchop =About 70kHzIf chopping frequency is raised, Rippl of current will become small and wave-like reproducibility will improve.However, the gate loss inside IC goes up and generation of heat becomes large.By lowering chopping frequency, reduction in generation of heat is expectable.However, Rippl of current may become large.It is a standard about about 70 kHz. A setup in the range of 50 to 100 kHz is recommended.byanyis (exciting mode, operating time, and so on), ambient temperature, and heat conditions (board condition and so on).isavoidAC Electrical Specification (Ta = 25°C, VM = 24 V, 6.8 mH/5.7 Ω)Timing charts may be simplified for explanatory purpose.Package DimensionsWeight TBDg (typ.) P-HSSOP36-1116-0.65-001 (unit :mm)Notes on ContentsBlock DiagramsSome of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for explanatory purposes.Equivalent CircuitsThe equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes.Timing ChartsTiming charts may be simplified for explanatory purposes.Application CircuitsThe application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage.Toshiba does not grant any license to any industrial property rights by providing these examples of application circuits.Test CircuitsComponents in the test circuits are used only to obtain and confirm the device characteristics. These components and circuits are not guaranteed to prevent malfunction or failure from occurring in the application equipment.IC Usage ConsiderationsNotes on handling of ICs(1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded,even for a moment. Do not exceed any of these ratings.Exceeding the rating(s) may cause devicebreakdown, damage or deterioration, and may result in injury by explosion or combustion.(2)Use an appropriate power supply fuse to ensure that a large current does not continuously flow in thecase of overcurrent and/or IC failure. The IC will fully break down when used under conditions thatexceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormalpulse noise occurs from the wiring or load, causing a large current to continuously flow and thebreakdown can lead to smoke or ignition. To minimize the effects of the flow of a large current in thecase of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuitlocation, are required.(3) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into thedesign to prevent device malfunction or breakdown caused by the current resulting from the inrushcurrent at power ON or the negative current resulting from the back electromotive force at power OFF.IC breakdown may cause injury, smoke or ignition. Use a stable power supply with ICs with built-inprotection functions. If the power supply is unstable, the protection function may not operate, causingIC breakdown. IC breakdown may cause injury, smoke or ignition.(4) Do not insert devices in the wrong orientation or incorrectly. Make sure that the positive and negativeterminals of power supplies are connected properly.Otherwise, the current or power consumption may exceed the absolute maximum rating, andexceeding the rating(s) may cause device breakdown, damage or deterioration, and may result ininjury by explosion or combustion.In addition, do not use any device inserted in the wrong orientation or incorrectly to which current isapplied even just once.(5)Carefully select external components (such as inputs and negative feedback capacitors) and loadcomponents (such as speakers), for example, power amp and regulator.If there is a large amount of leakage current such as from input or negative feedback capacitor, the ICoutput DC voltage will increase. If this output voltage is connected to a speaker with low inputwithstand voltage, overcurrent or IC failure may cause smoke or ignition. (The overcurrent may causesmoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied Load(BTL) connection-type IC that inputs output DC voltage to a speaker directly.Points to remember on handling of ICsOvercurrent detection CircuitOvercurrent detection circuits (referred to as current limiter circuits) do not necessarily protect ICs under all circumstances. If the overcurrent detection circuits operate against the overcurrent, clear the overcurrent status immediately.Depending on the method of use and usage conditions, exceeding absolute maximum ratings may cause the overcurrent detection circuit to operate improperly or IC breakdown may occur before operation. In addition, depending on the method of use and usage conditions, if overcurrent continues to flow for a long time after operation, the IC may generate heat resulting in breakdown.Thermal Shutdown CircuitThermal shutdown circuits do not necessarily protect ICs under all circumstances. If the thermal shutdown circuits operate against the over-temperature, clear the heat generation status immediately.Depending on the method of use and usage conditions, exceeding absolute maximum ratings may cause the thermal shutdown circuit to operate improperly or IC breakdown to occur before operation.Heat Radiation DesignWhen using an IC with large current flow such as power amp, regulator or driver, design the device so that heat is appropriately radiated, in order not to exceed the specified junction temperature (TJ) at any time or under any condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, when designing the device, take into consideration the effect of IC heat radiation with peripheral components.Back-EMFWhen a motor rotates in the reverse direction, stops or slows abruptly, current flows back to the motor’s power supply owing to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power supply and output pins might be exposed to conditions beyond the absolute maximum ratings. To avoid this problem, take the effect of back-EMF into consideration in system design.RESTRICTIONS ON PRODUCT USE∙Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice.∙This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.∙Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. 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Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.∙PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MA Y CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative.∙Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.∙Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.∙The information contained herein is presented only as guidance for Product use. 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电源电路设计.众所皆知，电源电路设计，乃是在整体电路设计中最基础的必备功夫，因此，在接下来的文章中，将会针对实体电源电路设计的案例做基本的探讨。

电源device电路※输出电压可变的基准电源电路（特征：使用专用IC基准电源电路）图1是分流基准（shunt regulator）IC构成的基准电源电路，本电路可以利用外置电阻与的设定，使输出电压在范围内变化，输出电压可利用下式求得：----------------------（1）：内部的基准电压。

图中的TL431是TI的编号，NEC的编号是μPC1093，新日本无线电的编号是NJM2380，日立的编号是HA17431，东芝的编号是TA76431。

※输出电压可变的高精度基准电源电路（特征：高精度、电压可变）类似REF-02C属于高精度、输出电压不可变的基准电源IC，因此设计上必需追加图2的OP增幅IC，利用该IC的gain使输出电压变成可变，它的电压变化范围为，输出电流为。

※利用单电源制作正负电压同时站立的电源电路（特征：正负电压同时站立）虽然电池device的电源单元，通常是由电池构成单电源电路，不过某些情况要求电源电路具备负电源电压。

图3的电源电路可输出由单电源送出的稳定化正、负电源，一般这类型的电源电路是以正电压当作基准再产生负电压，因此负电压的站立较缓慢，不过图3的电源电路正、负电压却可以同时站立，图中的TPS60403 IC可使的电压极性反转。

※40V最大输出电压的Serial Regulator（特征：可以输出三端子Regulator IC无法提供的高电压）虽然三端子Regulator IC的输出电压大约是24V，不过若超过该电压时电路设计上必需与IC 以disk lead等组件整合。

图5的Serial Regulator最大可以输出+40V 的电压，图中D2 Zener二极管的输出电压被设定成一半左右，再用R7 VR1 R8 将输出电压分压，使该电压能与VZ2 的电压一致藉此才能决定定数。

正激同步整流芯片型号正激同步整流芯片是一种广泛应用于电源电子领域的功率电子器件，它能够实现高效率的能量转换和电流整形功能。

正激同步整流芯片通常由功率MOSFET和控制电路组成，其中功率MOSFET用于开关电源的电流整形，控制电路则用于控制功率MOSFET的开关时间和频率。

正激同步整流芯片的工作原理如下：当输入电压施加在正激同步整流芯片上时，控制电路会根据输入电压的变化情况，将开关信号发送给功率MOSFET。

功率MOSFET会根据接收到的开关信号，控制开关管的导通和关断，实现输入电压的整形和输出电流的控制。

通过不断地调整开关时间和频率，正激同步整流芯片能够实现高效率的电能转换和输出电流的精确控制。

正激同步整流芯片广泛应用于各种类型的电源电子设备中，特别是在电源适配器、电动车充电器、太阳能逆变器等产品中得到了广泛的应用。

正激同步整流芯片具有高效率、低功耗、高可靠性和稳定性等优点，能够提高电源的能量转换效率，降低系统的功耗和运行温度，延长设备的使用寿命。

下面将介绍几种常见的正激同步整流芯片型号：1. LT3748LT3748是一款高性能的正激同步整流芯片，采用了恒流模式控制和频率抖动技术，能够实现高效率的能量转换和精确的输出电流控制。

该芯片工作电压范围广，可适用于多种应用场景。

此外，LT3748还具有过压保护、过流保护和短路保护等多重保护功能，能够提高系统的安全性和稳定性。

2. IR11688SIR11688S是一款高性能的同步整流控制芯片，采用了先进的电流模式控制技术和内置的PWM发生器，能够实现高效率的电源转换和快速响应的输出电流控制。

该芯片具有内置的过流保护和短路保护功能，能够保护系统免受异常工作状态的损害。

3. UCC24610UCC24610是一款集成度高、性能稳定的同步整流控制芯片，采用了先进的电流模式控制和可调频率技术，能够实现高效率的电能转换和精确的输出电流控制。

该芯片还具有过流保护、过压保护和短路保护等多重保护功能，能够提高系统的可靠性和稳定性。

bq24610原理
BQ24610是一款单片锂离子电池充电管理IC，用于提供电池
充电控制和保护功能。

其工作原理如下：
1. 当充电器连接后，BQ24610会检测电源适配器的电压，并
确定电池是否已连接。

2. BQ24610会根据充电模式和电池状态，选择恰当的充电算法。

充电模式可以是预充、恒流或恒压模式。

3. 如果电池电压低于预设阈值，BQ24610将会进入预充模式。

它会以较低的电流将电池充电至某个电压，以避免过高的充电电流对电池造成损害。

4. 一旦电池电压达到预设阈值，BQ24610将会进入恒流模式，以恒定的电流将电池充电至一定的容量。

这有助于快速充电电池。

5. 当电池电压接近所需的最大充电电压时，BQ24610将会进
入恒压模式，以恒定的电压继续将电池充电至所需的最大容量。

6. 在充电过程中，BQ24610会实时监测电池的温度，以确保
充电过程的安全性。

如果电池温度异常，则会停止充电。

7. 同时，BQ24610还具有过流、过压、过温和短路保护功能，以保护充电电路和电池免受损坏。

总之，BQ24610通过灵活的充电算法和全面的保护功能，实现了高效、安全的锂离子电池充电管理。

PAN2416AV产品说明书2.4GHz无线收发SOC芯片V1.0PAN2416AV产品说明书2.4GHz单片高速无线收发SOC芯片概述PAN2416AV芯片是工作在2.400~2.483GHz世界通用ISM频段的单片无线收发芯片。

该芯片集成射频收发机、频率发生器、晶体振荡器、调制解调器和低功耗MCU等功能模块，并且支持一对多组网和带ACK的通信模式。

用户通过MCU的I/O口向芯片发出指令，芯片自动完成收发配置进行通信，并根据应答信息自动判断数据发送/接收是否成功，从而进行重发，丢包，继续发送和等待等操作，简化了用户程序。

发射输出功率、工作频道以及通信数据率均可配置。

PAN2416AV需要少量的外围器件，支持单层/双层印制电路板的方案。

主要特性1、功耗较低发射模式（2dBm）工作电流19mA；接收模式工作电流15mA；休眠电流2uA。

2、节省外围器件支持外围5个元器件，包括1颗晶振和少量电容；支持双层或单层印制板设计，可以使用印制板微带天线或者导线天线；芯片自带部分链路层的通信协议；配置少量的参数寄存器，使用方便。

3、性能优异250K/1M/2M bps模式的接收灵敏度为-91/-87/-83dBm；发射输出功率最大可达8dBm；抗干扰性好，接收滤波器的邻道抑制度高，接收机选择性较好。

4、集成MCU功能OTP：4K×16Bit；通用RAM：176×8Bit；MCU集成高精度12位ADC，内置WDT定时器、PWM输出、低压侦测电路等模块。

其它特性四线SPI 接口通信带自动扰码和CRC校验功能支持最大数据长度为32字节（两级FIFO）或者64字节（单级FIFO）SOP16封装1M / 2Mbps模式，需要晶振精度±40ppm 250kbps模式，需要晶振精度±20ppm 工作电压支持2.2~3.3V 工作温度支持-40~+85℃GFSK通信方式支持自动应答及自动重传支持RSSI检测功能10个GPIO中断源三路定时器应用方案无线鼠标电视和机顶盒遥控器无线游戏手柄遥控玩具常用遥控器智能家居版本修订时间更新内容相关文档V0.4 2016. 12 文字勘误V1.0 2017.09 文字修改目录1. 命名规则 (8)1.1 PAN2416AV命名规则 (8)1.2 PAN2416系列产品选择 (8)2. 主要电特性 (8)3. 极限最大额定值 (10)4. 系统结构方框图 (10)5. 引脚定义 (11)6. 芯片工作状态 (13)6.1 休眠模式 (14)6.2 待机模式-I（STB1） (14)6.3 待机模式-III（STB3） (14)6.4 待机模式-II（STB2） (14)6.5 接收模式 (14)6.6 发射模式 (14)7. 数据通信模式 (15)7.1 普通模式 (15)7.2 增强模式 (15)7.3增强发送模式 (16)7.4 增强接收模式 (16)7.5 增强模式下的数据包识别 (17)7.6 增强模式下的PTX和PRX的时序图 (17)7.7 增强模式下的接收端一对多通信 (17)7.8 DATA FIFO (19)7.9 中断引脚 (19)8. SPI控制接口 (19)8.1 SPI指令格式 (20)8.2 SPI 时序 (21)9. 控制寄存器 (22)10. 数据包格式描述 (32)10.1 普通模式的数据包形式 (32)10.2 增强模式的数据包形式 (33)10.3 增强模式的ACK包形式 (33)11. MCU寄存器 (34)11.1性能特性 (33)11.2系统结构框图 (34)11.3系统配置寄存器 (35)11.4在线串行编程 (36)12. 中央处理器(CPU) (37)12.1内存 (37)12.1.1程序内存 (37)12.1.2数据存储器 (41)12.2寻址方式 (43)12.2.1直接寻址 (43)12.2.2立即寻址 (43)12.2.3间接寻址 (43)12.3堆栈 (44)12.4工作寄存器（ACC） (45)12.4.1概述 (45)12.4.2 ACC应用 (45)12.5 程序状态寄存器(STATUS) (45)12.6 预分频器(OPTION_REG) (47)12.7程序计数器（PC） (48)12.8 看门狗计数器(WDT) (48)12.8.1 WDT周期 (48)12.8.2 看门狗定时器控制寄存器WDTCON (49)13. 系统时钟 (50)13.1 概述 (50)13.2 系统振荡器 (51)13.2.1 内部RC振荡 (51)13.3起振时间 (51)13.4振荡器控制寄存器 (51)14. 复位 (52)14.1上电复位 (52)14.2 掉电复位 (53)14.2.1掉电复位概述 (53)14.2.2掉电复位的改进办法 (54)14.3 看门狗复位 (54)15. 休眠模式 (55)15.1 进入休眠模式 (55)15.2 从休眠状态唤醒 (55)15.3 使用中断唤醒 (55)15.4 休眠模式应用举例 (56)15.5 休眠模式唤醒时间 (56)16. I/O端口 (57)16.1 PORTA (58)16.1.1 PORTA数据及方向控制 (58)16.1.2 PORTA模拟选择控制 (60)16.2 PORTB (60)16.2.1 PORTB数据及方向 (60)16.2.2 PORTB上拉电阻 (61)16.2.3 PORTB电平变化中断 (61)16.3 PORTC (62)16.3.1 PORTC数据及方向 (62)16.3.2 PORTC上拉电阻 (63)16.4 PORTE (63)16.4.1 PORTE数据及方向 (63)16.5 I/O使用 (64)16.5.1 写I/O口 (64)16.5.2 读I/O口 (64)16.6 I/O口使用注意事项 (65)17. 中断 (66)17.1 中断概述 (66)17.2 中断控制寄存器 (67)17.2.1 中断控制寄存器 (67)17.2.2 外设中断允许寄存器 (68)17.2.3 外设中断请求寄存器 (69)17.3 中断现场的保护方法 (70)17.4 中断的优先级，及多中断嵌套 (70)18. 定时计数器TIMER0 (71)18.1 定时计数器TIMER0概述 (71)18.2 TIMER0的工作原理 (72)18.2.1 8 位定时器模式 (72)18.2.2 8 位计数器模式 (72)18.2.3 软件可编程预分频器 (72)18.2.4 在TIMER0和WDT模块间切换预分频器 (72)18.2.5 TIMER0中断 (73)18.3 与TIMER0相关寄存器 (73)19. 定时计数器TIMER1 (74)19.1 TIMER1概述 (74)19.2 TIMER1 的工作原理 (74)19.3 TIMER1 预分频器 (74)19.4 TIMER1 中断 (74)19.5 TIMER1相关寄存器 (75)20. 定时计数器TIMER2 (75)20.1 TIMER2概述 (75)20.2 TIMER2的工作原理 (77)20.3 TIMER2相关的寄存器 (77)21. 模数转换（ADC） (79)21.1 ADC概述 (79)21.2 ADC配置 (79)21.2.1 端口配置 (79)21.2.2 通道选择 (80)21.2.3 ADC参考电压 (80)21.2.4 转换时钟 (80)21.2.5 ADC中断 (80)21.2.6 结果格式化 (80)21.3 ADC工作原理 (81)21.3.1 启动转换 (81)21.3.2 完成转换 (81)21.3.3 终止转换 (81)21.3.4 ADC在休眠模式下的工作原理 (81)21.3.5 A/D转换步骤 (81)21.4 ADC相关RAM (83)22. PWM模块 (85)22.1 PWM1 (85)22.2 PWM2 (86)22.3 PWM模式 (87)22.3.1 PWM周期 (88)22.3.2 PWM占空比 (88)22.3.3 PWM分辨率 (89)22.3.4 休眠模式下的操作 (89)22.3.5 系统时钟频率的改变 (89)22.3.6 复位的影响 (89)22.3.7 设置PWM操作 (89)23. MCU电气参数 (90)23.1 MCU DC特性 (90)23.2 MCU AC特性 (90)23.3指令一览表 (91)23.4 指令说明 (93)24. 典型应用电路（参考） (104)25. 封装尺寸 (105)26. 联系方式 (106)1. 命名规则1.1 PAN2416AV 命名规则图1.1 PAN2416系列产品命名规则1.2 PAN2416系列产品选择表1-1 PAN2416系列产品选择产品型号芯片版本 封装形式 PAN2416AV A V ：SOP16 PAN2416AF A F ：SOP142. 主要电特性表2-1 PAN2416AV 的RF 部分主要电特性参数值 特 性测试条件(VCC = 3V±5%，TA=25℃)最小 典型 最大 单位 休眠模式 2 uA 待机模式1 30 uA 待机模式3 650 uA 待机模式2 780 uA 发射模式 (-35dBm) 9 mA 发射模式 (-20dBm) 9.5 mA 发射模式 (0dBm) 16 mA 发射模式 (2dBm) 19 mA 发射模式 (8dBm) 30 mA 发射模式 (13dBm) 66 mA 接收模式 (250Kbps) 15 mA 接收模式 (1Mbps) 15.5 mA ICC接收模式 (2Mbps)16.5 mA 系统指标ƒOP 工作频率24002483MHzPLL res锁相环频率步径 1 MHz ƒXTAL晶振频率16 MHz DR码率0.25 2 Mbps ∆ƒ250K调制频偏@250Kbps 125 150 KHz ∆ƒ1M调制频偏@1Mbps 160 300 KHz ∆ƒ2M调制频偏@2Mbps 320 550 KHz FCH250K频道间隔@250Kbps 1 MHz FCH1M频道间隔@1Mbps 1 MHz FCH2M频道间隔@2Mbps 2 MHz发射模式指标PRF 典型输出功率 2 8 8 dBm PRFC 输出功率范围-35 8 dBmPBW1发射带数据调制的20dB带宽（250Kbps）500 KHzPBW2发射带数据调制的20dB带宽（1Mbps）1 MHzPBW3发射带数据调制的20dB带宽（2Mbps）2 MHz接收模式指标（注1）RX max误码率<0.1%时的最大接收幅度0 dBm RXSENS1 接收灵敏度（0.1%BER）@250Kbps-91 dBmRXSENS2 接收灵敏度（0.1%BER）@1Mbps-87 dBmRXSENS3 接收灵敏度（0.1%BER）@2Mbps-83 dBm接收模式邻道选择性C/I CO同频的通道选择性@250kbps 2 dBc C/I1ST第1相邻道选择性@250kbps -8 dBc C/I2ND第2相邻道选择性@250kbps -18 dBc C/I3RD第3相邻道选择性@250kbps -24 dBc C/I4TH第4相邻道选择性@250kbps -28 dBc C/I5TH第5相邻道选择性@250kbps -32 dBc C/I6TH第6相邻道选择性@250kbps -35 dBc C/I CO同频的通道选择性@1Mbps 10 dBc C/I1ST第1相邻道选择性@1Mbps 1 dBc C/I2ND第2相邻道选择性@1Mbps -18 dBc C/I3RD第3相邻道选择性@1Mbps -23 dBc C/I4TH第4相邻道选择性@1Mbps -28 dBc C/I5TH第5相邻道选择性@1Mbps -32 dBc C/I6TH第6相邻道选择性@1Mbps -35 dBc C/I CO同频的通道选择性@2Mbps 10 dBcC/I1ST第1相邻道选择性@2Mbps -6 dBcC/I2ND第2相邻道选择性@2Mbps -10 dBcC/I3RD第3相邻道选择性@2Mbps -22 dBcC/I4TH第4相邻道选择性@2Mbps -28 dBcC/I5TH第5相邻道选择性@2Mbps -34 dBc操作条件VDD 供电电压 2.2 3 3.3 VVSS 芯片地0 VV OH高电平输出电压VDD-0.3 VDD VV OL低电平输出电压VSS VSS+0.3 VV IH高电平输入电压VDD-0.3 VDD VV IL低电平输入电压VSS VSS+0.3 V*注1：在晶振16MHz的整数倍（如2416、2432MHz等）的频道及相邻正负1MHz的频道的接收灵敏度退化2dB；发射信号调制精度（EVM）退化10%。