NDB6050中文资料

NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6050A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.General Features● V DS =60V,I D =50AR DS(ON) <20m Ω @ V GS =10V● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high E AS ● Excellent package for good heat dissipation ● Special process technology for high ESD capabilityApplication● Power switching application● Hard switched and high frequency circuits ● Uninterruptible power supply100% UIS TESTED!100% ∆Vds TESTED!Schematic diagramMarking and pin assignmentTO-220-3L top viewPackage Marking and Ordering InformationDevice MarkingDeviceDevice PackageReel SizeTape widthQuantityNCE6050A NCE6050A TO-220-3L---Absolute Maximum Ratings (T C =25℃unless otherwise noted)Parameter Symbol Limit UnitDrain-Source Voltage V DS 60 V Gate-Source Voltage V GS±20 V Drain Current-ContinuousI D 50 ADrain Current-Continuous(T C =100℃) I D (100℃) 35.4 A Pulsed Drain Current I DM 90 A Maximum Power Dissipation P D85 W Derating factor0.3 W/℃Single pulse avalanche energy (Note 5)E AS 245 mJOperating Junction and Storage Temperature RangeT J ,T STG-55 To 175℃Thermal CharacteristicThermal Resistance,Junction-to-Case (Note 2)R θJC3.3/W ℃Electrical Characteristics (T C =25℃unless otherwise noted)Parameter Symbol ConditionMin Typ Max UnitOff CharacteristicsDrain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 60 - - V Zero Gate Voltage Drain Current I DSS V DS =60V,V GS =0V -- 1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold VoltageV GS(th) V DS =V GS ,I D =250μA 1.4 1.9 2.5 V Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =20A - 14 20 m Ω Forward Transconductance g FSV DS =5V,I D =20A 18- - S Dynamic Characteristics (Note4) Input Capacitance C lss - 2050 - PFOutput CapacitanceC oss - 158 - PFReverse Transfer Capacitance C rssV DS =30V,V GS =0V,F=1.0MHz- 120 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 7.4 - nSTurn-on Rise Time t r - 5.1 - nS Turn-Off Delay Time t d(off) - 28.2 - nSTurn-Off Fall Time t fV DD =30V, R L =6.7Ω V GS =10V,R G =3Ω - 5.5 -nSTotal Gate Charge Q g - 50 nCGate-Source Charge Q gs - 6 nCGate-Drain ChargeQ gd V DS =30V,I D =20A,V GS =10V- 15 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SDV GS =0V,I S =20A -1.2 V Diode Forward Current (Note 2)I S - - 50 A Reverse Recovery Time t rr - 28 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF =20Adi/dt = 100A/μs (Note3)- 40 - nCForward Turn-On Timet onIntrinsic turn-on time is negligible (turn-on is dominated by LS+LD)Notes:1. Repetitive Rating: Pulse width limited by maximum junction temperature.2. Surface Mounted on FR4 Board, t ≤ 10 sec .3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.4. Guaranteed by design, not subject to production5. EAS condition : Tj=25,VDD=℃30V,VG=10V,L=0.5mH,Rg=25ΩTest Circuit1) E AS test Circuit2) Gate charge test Circuit3) Switch Time Test CircuitTypical Electrical and Thermal Characteristics (Curves)Vds Drain-Source Voltage (V)Figure 1 Output CharacteristicsVgs Gate-Source Voltage (V)Figure 2 Transfer CharacteristicsI D - Drain Current (A)Figure 3 Rdson- Drain CurrentT J -Junction Temperature(℃)Figure 4 Rdson-Junction TemperatureQg Gate Charge (nC)Figure 5 Gate ChargeVsd Source-Drain Voltage (V)Figure 6 Source- Drain Diode ForwardR d s o n O n -R e s i s t a n c e (m Ω)I D - D r a i n C u r r e n t (A )I D - D r a i n C u r r e n t (A )N o r m a l i z e d O n -R e s i s t a n c eV g s G a t e -S o u r c e V o l t a g e (V )I s - R e v e r s e D r a i n C u r r e n t (A )Vds Drain-Source Voltage (V)Figure 7 Capacitance vs VdsVds Drain-Source Voltage (V)Figure 8 Safe Operation AreaT J -Junction Temperature(℃)Figure 9 BV DSS vs Junction TemperatureT J -Junction Temperature(℃)Figure 10 V GS(th) vs Junction TemperatureI D - D r a i n C u r r e n t (A )C C a p a c i t a n c e (p F )Square Wave Pluse Duration (sec)Figure 11 Normalized Maximum Transient Thermal Impedancer (t ),N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c eTO-220-3L Package InformationDimensions In Millimeters Dimensions In Inches SymbolMin.Max.Min.Max.A 4.400 4.600 0.173 0.181A1 2.250 2.550 0.089 0.100b 0.710 0.910 0.028 0.036b1 1.170 1.370 0.046 0.054c 0.330 0.650 0.013 0.026c1 1.200 1.400 0.047 0.055D 9.910 10.250 0.390 0.404E 8.9500 9.750 0.352 0.384E1 12.650 12.950 0.498 0.510e 2.540 TYP. 0.100 TYP.e1 4.980 5.180 0.196 0.204F 2.650 2.950 0.104 0.116H 7.900 8.100 0.311 0.319h 0.000 0.300 0.000 0.01213.400 0.508 0.528L 12.900L1 2.850 3.250 0.112 0.128 V 7.500 REF. 0.295 REF.Φ 3.400 3.800 0.134 0.150Attention:■Any and all NCE power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE power representative nearest you before using any NCE power products described or contained herein in such applications.■ NCE power assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE power products described or contained herein.■Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.■ NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.■ In the event that any or all NCE power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.■No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE power Semiconductor CO.,LTD.■Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power product that you intend to use.■This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.。

STTD6050H-12M2YFeatures•AEC-Q101 qualified•1200 V symmetrical blocking voltage •High junction temperature: 150 °C•High noise immunity, static dV/dt: 1000 V/μs•Embed two TN6050HP-12 and two STBR6012 dies•Module qualified according to AQG324 recommendation •SMD with isolated top cooled tab•Terminal pins opposite to cooling side –Fully automatic PCB mounting to heat sink •Moisture Sensitivity Level : Level 3–IPC/JEDEC J-STD-033•4000 V insulated tab-to-lead package –UL recognized, File E81734•Large creepage distance to meet IEC 60664-1–250 V AC , material group 2, pollution degree 3–600 V AC , material group 2, pollution degree 2•Smaller footprint than four TO-247•ECOPACK2 compliant componentApplications•Single-phase controlled bridge rectifier •On-board and stationary chargers•AC DC converter for motor drive, UPS and SMPS •AC input converter current up to 85 A RMS •Output full wave DC current up to 75 A AVDescriptionThe STTD6050H-12M2Y is a top cooled surface mount module that integrates a single-phase half-controlled bridge rectifier. It is rated at 1200 V and delivers anoutput full wave DC current up to 75 A AV . Each single embedded device has a rated current of 60 A RMS and a symmetric blocking voltage of 1200 V.With its top cooling pad opposite to the printed circuit board this device allows the PCB-module-heat sink stack to be automatically assembled.This provides a low profile and compact converter in the field of on-board charger,charging station, motor drive, UPS and AC-DC power supplies.Based on the ST high temperature automotive planar technology, it offers higher specified noise immunity of 1000 V/µs up to the 150 °C junction temperature T j , and an over-voltage robustness V DSM up to 1400 V.60 A 1200 V half-controlled bridge rectifier in ACEPACK SMIT moduleSTTD6050H-12M2YDatasheetSTTD6050H-12M2YCharacteristics 1CharacteristicsTable 1. Diode and SCR absolute maximum ratings (limiting values)1.V DRM and V DSM apply to SCR only.Table 2. SCR electrical characteristics, per single SCRSTTD6050H-12M2YCharacteristics1.Refer to application note AN4608 for parameter definitionTable 3. Diode Electrical Characteristics, per single diodeTable 4. Thermal characteristics1.The case temperature is measured right underneath the device die on cooling padFor more information, please refer to the following application note related to the thermal management:•AN5384: ACEPACK SMIT module package guidelines for mounting and thermal managementSTTD6050H-12M2YCharacteristics (curves) 1.1Characteristics (curves)STTD6050H-12M2Y Characteristics (curves)STTD6050H-12M2YCharacteristics (curves)Figure 15. SCR relative variation of the static dV/dt immunity versus junction temperature (typical values)dV/dt [T] / dV/dt [T=150 °C]2550751001251502Application2.1Solid state Inrush current limitation topologies using STTD6050H-12M2YAs illustrated here below, bypass and mixed bridge rectifiers are two topologies dedicated to the AC line voltage rectification which include the solid-state inrush current limitation feature.Figure 16. Bypass function ensured by SCRFigure 17.Soft start / mixed control bridge rectifierIn the bypass topology, at system start-up both T1 and T2 SCRs are OFF. The output bulk capacitor is thencharged through the D3, D4, D2, D1 diodes and the current is limited by the R_limit resistor placed in the current path.At steady state, R_limit power losses are cut by switching ON alternatively the T1 and T2 SCRs according to line polarity which are then bypassing R_limit.Figure 18. Bypass topology waveform working principleSTTD6050H-12M2YApplicationIn the mixed bridge topology, SCRs are controlled in phase angle to smoothly increase the PFC output capacitor voltage up to peak AC line voltage. The pre-charging peak current value is controlled by a microcontroller which smartly synchronizes the SCRs gate driving signal angle step (referred as Δt in the figure here below). Limiting resistor is no more needed.Figure 19.Mixed bridge phase angle principleFor more information, refer to the application note:•AN4606: Inrush-current limiter circuits (ICL) with Triacs and Thyristors (SCR) and controlled bridge designtips.Those two robust solid-state topologies allow the applications to easily comply to the following standards:1.IEC61000-3-3 (voltage fluctuations and flicker in public low-voltage supply systems, for equipment with ratedcurrent ≤ 16 A). the high current powered from the grid may lead to voltage fluctuations and drops due to the line impedance. Those mains voltage disturbances have an impact on any other equipment connected to the same circuit and cause undesired brightness variation of lamps or displays (commonly called flickering phenomenon).2.IEC61000-4-11 (voltage dips, short interruptions, and voltage variations immunity tests) As any applianceconnected to the mains can be subject to line voltage dips or interruptions, a high input current mayoccur when the line voltage suddenly comes back to its nominal value. This high current may damage the front-end circuit components and can trigger an AC fuse for example.STTD6050H-12M2YSolid state Inrush current limitation topologies using STTD6050H-12M2Y2.2Dissipated power and junction temperature calculation at steady stateIn below example, STTD6050H-12M2Y is placed upstream from PFC stage. I T and I F define respectively SCR and diode current value. Therefore, the current taken from the line and flowing through the mixed bridge is a sinus waveform.Figure 20. Soft start / mixed control bridge rectifierFigure 21. SCR / diode current waveform (sinusoidal halfwave)2.2.1Dissipated power into SCRs and diodesDissipated power into SCRs and diodes is defined by the following equation:P d =V TOX ×I T AV +R DX ×I T RMS2(1)Note:V T0X and R DX are given in Eq. (1) and Eq. (4) where X = T for the SCR and F for the diode.I T AV =I P π ;Ip =I Line RMS× 2T AV =I L RMS(2)I T RMS 2=I P 24=(3)Using equations (1), (2) and (3), dissipated power can directly be calculated from AC line RMS current valueI L(RMS) for a single SCR or diode in the mixed bridge:P d =I L RMS +R DX2× I L RMS2(4)STTD6050H-12M2YDissipated power and junction temperature calculation at steady state2.2.2Junction temperature calculationFigure 22.Die assembly representationWhen Tc value is known, silicon junction temperature can be calculated as follows:T j =T C +P D × R TH j −cOtherwise, starting from ambient temperature measurement, junction temperature can be calculated as follows:T j =T A +P D ×R TH j −a Note:R th(j-c) and R th(j-a) values are given in the datasheet.with:R TH j −a =R TH j −c +R TH c −ℎ+R TH ℎ−aand where R TH(c-h) is the thermal interface resistance (grease or foil) and R TH(h-a) is the heatsink thermal resistance.For more information about the thermal management and power dissipation calculation, refer to the application note:•AN533: SCRs, TRIACs, and AC switches, thermal management precautions for handling and mounting •AN604 : Calculation of conduction losses in a power rectifier •AN4021 : Calculation of reverse losses in a power diodeDissipated power and junction temperature calculation at steady state3Package informationIn order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: . ECOPACK is an ST trademark.3.1ACEPACK SMIT package information•Lead-free package leads finishing•Halogen-free molding compound resin meets UL94 standard level V0Figure 23.ACEPACK SMIT package outlineDM00447519_Rev.5Package informationACEPACK SMIT package informationTable 5. ACEPACK SMIT package mechanical dataFigure 24. ACEPACK SMIT recommended footprint (dimensions are in mm)DM00447519_FP_Rev.5Note:Recommended pressing force on package to the heatsink: 50 N as described in application note AN5384.3.2ACEPACK SMIT package insulation informationFigure 25.ACEPACK SMIT package insulation informationTable 6. ACEPACK SMIT package insulation characteristicsNote:Recommended pressing force on package to the heatsink: 50 N as described in application note AN5384.ACEPACK SMIT package insulation information3.3ACEPACK SMIT terminal descriptionTable 7. ACEPACK SMIT STTD6050H-12M2Y module pinout descriptionFigure 26. ACEPACK SMIT STTD6050H-12M2Y module pinout3.4ACEPACK SMIT packing informationFigure 27. ACEPACK SMIT carrier tape outline, bottom viewTable 8. ACEPACK SMIT carrier tape dimensionsFigure 28. ACEPACK SMIT reel outlineTable 9. ACEPACK SMIT reel dimensions4Ordering informationFigure 29. Ordering information schemeDevices TypeT = Thyristor SCR, ; D = DiodeRMS SCR / Diode current60= 60 AGate triggering Current50 = 50 mAHigh TemperatureBlocking Voltage12 = 1200 VPackageM2 = ACEPACK SMIT module with two embedded legs 12T D6050-HH = 150°C rated M2YSTQuality gradeComply with automotive AQG324Table 10. Ordering informationOrdering informationRevision historyTable 11. Document revision historyIMPORTANT NOTICE – PLEASE READ CAREFULLYSTMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.No license, express or implied, to any intellectual property right is granted by ST herein.Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to /trademarks. All other product or service names are the property of their respective owners.Information in this document supersedes and replaces information previously supplied in any prior versions of this document.© 2021 STMicroelectronics – All rights reservedSTTD6050H-12M2Y。

Technology Analysis技术分析DCW73数字通信世界2019.031 引言NDB 是现今仍在使用，使用时间较长的航空无线电导航设备。

飞机上能接收地面NDB 台信号的装置叫做ADF （方位角指示器）。

NDB 导航是利用地面NDB 导航台与飞机上的ADF 配合使用，引导飞机作非精密的一种飞行导航设备。

ADF 的仪表头只有一支指针，当接收到地面NDB 号时，ADF 的指针就指向NDB 台站所在的方向。

如果飞机径直朝台站飞去，指针就指着前方，当飞机飞过台站并继续往前飞，指针会转过180度指向后方。

NDB 无方向信标由发射机、谐波滤波器、监控器、电源、天线调配器和遥控单元组成。

设备为主备机配置，具有自动转换功能，但系统只配置双电源、双发射机、双转换电路/码产生器，天线调配器、谐波滤波器、监控器、天线、遥控单元为公共部分。

2 NDB 输出功率和天线电流下降（1）故障现象。

NDB-A 机出现输出功率和天线电流下降情况，转换到NDB-B 机后，设备故障现象和A 机相同。

（2）故障分析。

由于NDB-A 机和NDB-B 机都出现相同的故障现象，这样可以基本排除A 机和B 机发射机故障以及各自的电源故障，故障点应该在NDB 设备的公共部分，NDB 设备公共部分包括谐波滤波器、天线调配器、馈线、天线、控制器，并且输出功率和反射功率检测取样点在谐波滤波器上，测试反射功率为22W ，正常工作时反射功率为15W 左右，故障点在谐波滤波器以后，依次检查谐波滤波器到天线之间的同轴电缆、馈线、天线正常，但是故障依旧，在天线调配器上将电感微调开关由自动调整设置到手动调整，手动尝试增加电感，设备恢复到正常的天线电流和输出功率，故障压缩到天线调配器上，电感量的增减在手动位可以调整，而自动位不能，造成设备输出电路失谐，产生反射信号，使输出功率和天线电流下降。

（3）故障查找排除。

查看设备电路图，发现造成设备故障的是天线调配器组件里的相位检测器，打开相位检测器发现，雷击造成射频输出线到电容C1的连接线被烧断，重新焊接后恢复正常。