TN1215-800H中文资料

®1/11Table 1: Main FeaturesDESCRIPTIONAvailable either in sensitive (TS12) or standard (TN12 / TYN) gate triggering levels, the 12A SCR series is suitable to fit all modes of control, found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits,capacitive discharge ignition and voltage regulation circuits...Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space area.Symbol Value Unit I T(RMS)12A V DRM /V RRM600 to 1000V I GT0.2 to 15mATN12, TS12 and TYNx12 Series12A SCR SREV. 5October 2005SENSITIVE & STANDARDTable 2: Order CodesPart Numbers Marking TN1215-x00B TN1215x00TN1215-x00B-TR TN1215x00TN1215-x00G TN1215x00G TN1215-x00G-TR TN1215x00G TN1215-x00H TN1215x00TS1220-x00B TS1220x00TS1220-x00B-TR TS1220x00TS1220-x00H TS1220x00TYNx12RG TYNx12TYNx12TRGTYNx12TTN12, TS12 and TYNx12 Series2/11Table 3: Absolute Ratings (limiting values)Tables 4: Electrical Characteristics (T j = 25°C, unless otherwise specified)■SENSITIVESymbolParameterValueUnitTN12-G TYN12TN12-B/H TS12-B/H I T(RMS) RMS on-state current (180° conduction angle)T c = 105°C 12A IT (AV) Average on-state current (180° conduction angle)T c = 105°C 8AI TSM Non repetitive surge peak on-state current t p = 8.3 ms T j = 25°C 145115A t p = 10 ms 140110I ²t I ²t Value for fusingt p = 10 msT j = 25°C 9860A 2S dI/dt Critical rate of rise of on-statecurrent I G = 2 x I GT , t r ≤ 100 ns F = 60 Hz T j = 125°C 50A/µs I GM Peak gate currentt p = 20 µsT j = 125°C 4A P G(AV)Average gate power dissipation T j = 125°C1W T stg T j Storage junction temperature range Operating junction temperature range- 40 to + 150- 40 to + 125°C V RGMMaximum peak reverse gate voltage (for TN12 & TYN12 only)5V SymbolTest ConditionsTS1220Unit I GT V D = 12 V R L = 140 ΩMAX.200µA V GT MAX.0.8V V GD V D = V DRM R L = 3.3 k Ω R GK = 1 k ΩT j = 125°CMIN.0.1V V RG I RG = 10 µAMIN.8V I H I T = 50 mA R GK = 1 k ΩMAX.5mA I L I G = 1 mA R GK = 1 k ΩMAX.6mA dV/dt V D = 65 % V DRM R GK = 220 ΩT j = 125°C MIN.5V/µs V TM I TM = 24 A tp = 380 µs T j = 25°C MAX. 1.6V V t0Threshold voltage T j = 125°C MAX.0.85V R d Dynamic resistance T j = 125°C MAX.30m ΩI DRM I RRMV DRM = V RRMR GK = 220 ΩT j = 25°C MAX.5µA T j = 125°C 2mATN12, TS12 and TYNx12 Series3/11■STANDARDTable 6: Thermal resistance Symbol Test ConditionsTN1215TYN Unit B / HGx12Tx12I GT V D = 12 V R L = 33 ΩMIN.20.52mA MAX.15515V GT MAX. 1.3V V GD V D = V DRM R L = 3.3 k ΩT j = 125°CMIN.0.2V I H I T = 500 mA Gate open MAX.40301530mAI L I G = 1.2 I GTMAX.80603060mA dV/dt V D = 67 % V DRM Gate open T j =125°C MIN.20040200V/µs V TM I TM = 24 A t p= 380 µs T j = 25°C MAX. 1.6V V t0Threshold voltage T j = 125°C MAX.0.85V R d Dynamic resistance T j = 125°C MAX.30m ΩI DRM I RRMV DRM = V RRMT j = 25°C MAX.5µA T j = 125°C 2mASymbol Parameter Value Unit R th(j-c)Junction to case (DC)1.3°C/WR th(j-a)Junction to ambient (DC)S = 0.5 cm ²DPAK 70°C/WS = 1 cm ²D 2PAK 45IPAK 100TO-220AB60S = Copper surface under tab.Figure 1: Maximum average power dissipation versus average on-state currentFigure 2: Average and D.C. on-state current versus case temperatureTN12, TS12 and TYNx12 Series4/11Figure 3: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout) (DPAK)Figure 4: Relative variation of thermal impedance junction to case versus pulse durationFigure 5: Relative variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, FR4 PC board for DPAK)Figure 6: Relative variation of gate trigger current and holding current versus junction temperature for TS8 seriesFigure 7: Relative variation of gate trigger current and holding current versus junction temperature for TN8 & TYN08 seriesFigure 8: Relative variation of holding current versus gate-cathode resistance (typical values) for TS8 seriesTN12, TS12 and TYNx12 Series5/11Figure 9: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values) for TS8 seriesFigure 10: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values) for TS8 seriesFigure 11: Surge peak on-state current versus number of cyclesFigure 12: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp <10ms, and corresponding values of I²tFigure 13: On-state characteristics (maximum values)Figure 14: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed circuit board FR4, copper thickness: 35µm) (DPAK and D 2PAK)TN12, TS12 and TYNx12 SeriesFigure 15: Ordering Information Scheme (TN8 series)Figure 16: Ordering Information Scheme (TS8 series)Figure 17: Ordering Information Scheme (TYN08 series)6/11TN12, TS12 and TYNx12 Series7/11Table 7: Product Selector Figure 18: DPAK Package Mechanical DataFigure 19: DPAK Foot Print Dimensions(in millimeters)Part Numbers Voltage (xxx)Sensitivity Package 600 V 700 V800 V 1000 VTN1215-xxxB X X 15 mA DPAK TN1215-xxxG X X X 15 mA D 2PAK TN1215-xxxH X X15 mA IPAK TS1220-xxxB X X 0.2 mA DPAK TS1220-xxxH X X0.2 mA IPAK TYNx12X X X 15 mA TO-220AB TYNx12TXXX5 mATO-220ABTN12, TS12 and TYNx12 Series8/11Figure 20: D 2PAK Package Mechanical DataFigure 21: DPAK Foot Print Dimensions (in millimeters)TN12, TS12 and TYNx12 Series Figure 22: IPAK Package Mechanical DataFigure 23: TO-220AB Package Mechanical Data9/11TN12, TS12 and TYNx12 Series10/11In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: .Table 8: Ordering InformationOrdering type Marking Package Weight Base qtyDelivery modeTN1215-x00B TN1215x00DPAK 0.3 g 75Tube TN1215-x00B-TR TN1215x00DPAK 0.3 g 2500Tape & reel TN1215-x00G TN1215x00G D 2PAK 1.5 g 50Tube TN1215-x00G-TR TN1215x00G D 2PAK 1.5 g 1000Tape & reel TN1215-x00H TN1215x00IPAK 0.3 g 75Tube TS1220-x00B TS1220x00DPAK 0.3 g 75Tube TS1220-x00B-TR TS1220x00DPAK 0.3 g 2500Tape & reel TS1220-x00H TS1220x00IPAK 0.3 g 75Tube TYNx12RG TYNx12TO-220AB 2.3 g 50Tube TYNx12TRGTYNx12TTO-220AB2.3 g50TubeNote: x = voltageTable 9: Revision HistoryDate RevisionDescription of ChangesSep-20003Last update.25-Mar-20054TO-220AB delivery mode changed from bulk to tube.14-Oct-20055Changed sensitivity values in Table 7 for TYNx12 (30 to 15 mA) and TYNx12T ( 15 to 5 mA). Added ECOPACK statement元器件交易网TN12, TS12 and TYNx12 Series Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics.All other names are the property of their respective owners© 2005 STMicroelectronics - All rights reservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America11/11。