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BFR96TS

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Document Number 85037 Rev. 4, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600 3 (9)
BFR96TS
Vishay Telefunken
S11 VCE/V IC/mA f/MHz 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 LIN MAG 0.370 0.395 0.396 0.395 0.389 0.386 0.373 0.363 0.348 0.374 0.397 0.399 0.398 0.394 0.389 0.378 0.368 0.355 0.710 0.542 0.497 0.479 0.464 0.454 0.438 0.427 0.410 0.544 0.436 0.417 0.410 0.397 0.394 0.384 0.372 0.357 ANG deg –150.0 –177.8 171.3 159.1 150.9 143.3 133.2 121.7 115.4 –157.4 179.7 170.0 158.4 150.3 143.3 132.8 121.7 114.9 –62.3 –129.2 –157.8 177.3 165.3 155.0 141.0 127.6 119.7 –83.4 –146.3 –169.2 170.8 160.5 151.1 139.1 125.9 118.6 LIN MAG 23.94 8.62 5.23 3.30 2.66 2.25 1.83 1.56 1.43 24.17 8.60 5.19 3.29 2.65 2.24 1.82 1.55 1.42 12.15 6.46 4.14 2.66 2.14 1.81 1.45 1.23 1.11 17.99 7.94 4.94 3.14 2.52 2.13 1.73 1.46 1.33 S21 ANG deg 109.0 87.9 78.1 66.7 60.2 54.0 45.8 38.2 33.5 107.0 87.1 77.7 66.2 59.8 53.5 45.4 37.7 32.9 140.0 103.2 86.6 70.2 61.8 54.5 45.0 36.5 31.8 129.3 96.9 83.4 69.6 62.1 55.5 46.6 38.1 33.4 LIN MAG 0.022 0.055 0.090 0.140 0.173 0.206 0.253 0.297 0.319 0.021 0.055 0.090 0.141 0.175 0.207 0.255 0.299 0.321 0.036 0.061 0.075 0.099 0.118 0.141 0.178 0.219 0.244 0.029 0.052 0.073 0.109 0.134 0.160 0.201 0.241 0.264 S12 ANG deg 69.6 75.4 74.8 71.1 68.2 65.1 60.1 55.4 52.5 73.0 77.4 75.7 71.6 68.6 65.3 60.3 55.4 52.5 61.8 48.7 51.4 58.2 61.7 63.7 64.5 63.7 62.4 60.1 58.8 63.5 66.4 66.8 66.1 63.8 61.1 59.0 LIN MAG 0.399 0.221 0.208 0.229 0.250 0.273 0.308 0.343 0.364 0.364 0.206 0.197 0.221 0.243 0.267 0.303 0.338 0.359 0.844 0.591 0.528 0.519 0.533 0.550 0.585 0.623 0.646 0.722 0.463 0.419 0.419 0.433 0.450 0.483 0.520 0.542 S22 ANG deg –55.7 –62.3 –69.7 –82.8 –90.8 –98.0 –107.5 –115.7 –120.8 –56.8 –62.5 –70.3 –83.6 –91.7 –98.8 –108.2 –116.3 –121.3 –23.2 –36.7 –42.4 –52.7 –60.5 –68.3 –79.8 –91.0 –98.1 –31.2 –40.3 –45.2 –55.8 –63.6 –71.3 –82.5 –93.0 –99.6
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure Test Conditions VCE = 10 V, IC = 70 mA, f = 500 MHz VCB = 10 V, f = 1 MHz VCE = 10 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz VCE = 10 V, IC = 70 mA, ZS = 50 W, f = 500 MHz VCE = 10 V, IC = 70 mA, ZS = 50 W, f = 800 MHz VCE = 10 V, IC = 70 mA, ZS = 50 W, ZL = ZLopt, f = 800 MHz VCE = 10 V, IC = 70 mA, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 W VCE = 10 V, IC = 70 mA, f = 800 MHz Symbol fT Ccb Cce Ceb F F Gpe V1 = V2 IP3 Min Typ 5 0.84 0.4 3.5 3.3 4.0 11.5 500 Max Unit GHz pF pF pF dB dB dower gain D Low noise figure D High transition frequency
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13623
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BFR96TS Marking: BFR96TS Plastic case (TO 50) 1 = Collector, 2 = Emitter, 3 = Base
Tamb ≤ 70 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 150 Unit K/W
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 15 2.5 100 700 175 –65 to +150 Unit V V V mA mW °C °C
Power gain Linear output voltage – two tone intermodulation test Third order intercept point
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dBm
www.vishay.de • FaxBack +1-408-970-5600 2 (9)
Document Number 85037 Rev. 4, 20-Jan-99
BFR96TS
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
RF amplifier up to GHz range specially for wide band antenna amplifier.
Document Number 85037 Rev. 4, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600 1 (9)
BFR96TS
Vishay Telefunken Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage DC forward current transfer ratio Test Conditions VCE = 20 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 2.5 V, IC = 0 IC = 5 mA, IB = 0 VCE = 10 V, IC = 70 mA Symbol Min Typ Max Unit ICES 100 mA ICBO 100 nA IEBO 10 mA V(BR)CEO 15 V hFE 25 75 150

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晶体管参数及代换大全

晶体管参数及代换大全

各频段发射管参数大全（2）Type:P.Out:Vcc:Frq:Gain:Prices: 2SC2290100 Watt14 Volt30 MHz(=MRF454)2SC231216 Watt12 Volt30 MHz12dB2SC278280 Watt12,5 Volt175 MHz6,8 dB2SC2879100 Watt12,5 Volt28 MHz13dB2N91850mA15 Volt600 MHz2N35532,5 Watt28 Volt175 MHz10 dB2N3866 1 Watt28 Volt400 MHz10dBABH71158535 Watt13,5 Volt108 MHz10dBBF964 (n-fet)30mA20 Volt200 MHzBF966 (n-fet)30mA20 Volt800 MHzBFG90a180mW15 Volt 5 GHzBFG91300mW12 Volt 6 GHzBFQ1369 Watt14 Volt 4 GHz12,5dB25.-EU BFQ342,7 Watt15 Volt 4 GHz16,3dB17.-EU BFQ684,5 Watt14 Volt 4 GHz13dBBFR943,5 Watt25 Volt3,5 GHz10dBBFW30220mW10 Volt800 MHz 3.-EU BGY22A2,9 Watt13,8 Volt380-512 MHzBGY3322 Watt12 Volt108 MHzBGY47H 3 Watt9,6 Volt400-470 MHzBGY88724 Volt40-860 MHz21,5 dBBLF147150 Watt28 Volt108 MHz14dBBLF147Second ChoiceBLF177150 Watt50 Volt108 MHz19dB70.-EU BLF177Second ChoiceBLF24415 Watt28 Volt175 MHz>13dBBLF244Second ChoiceBLF24530 Watt28 Volt175 MHz>13dB60.-EU BLF24680 Watt28 Volt108 MHz>16dBBLF246b60 Watt28 Volt175MHz>14dBBLF248300 Watt28 Volt225 MHz>10dBBLF278300 Watt50 Volt108 MHz>20dB135.-EU BLF34630 Watt28 Volt225 MHz16,5dBBLF346Second ChoiceBLF368300 Watt32 Volt225 MHz>12dBBLF368Second ChoiceBLF378250 Watt50 Volt225 MHz16dBBLF54310 Watt28 Volt500 MHz>12dBBLF543Second ChoiceBLF54420 Watt28 Volt500 MHz>11dBBLF548150 Watt28 Volt500 MHz10dBBLF548Second ChoiceBLF861150 Watt32 Volt860 MHz>13,5dBBLF861Second ChoiceBLF861a Second ChoiceBLF104770 Watt26 Volt 1 GHz>14dBBLF1047Second ChoiceBLF182065 Watt26 Volt2,4 GHz>11dBBLF1820-7065 Watt26 Volt2000 MHz>11dBBLF204530 Watt26 Volt2,4 GHz>10dBBLF2045Second ChoiceBLF204765 Watt26 Volt2200 MHz>10dBBLF2047L65 Watt26 Volt2000 MHz>10,5dBBLF205760 Watt26 Volt2,4 GHzBLU20/1220 Watt12,5 Volt470 MHz>6,5dBBLU30/1230 Watt12,5 Volt470 MHz>6dBBLU45/1245 Watt12,5 Volt470 MHz>4,8dB(=MRF646)BLU53 (dual)100 Watt28 Volt400 MHzBLU60/1260 Watt12,5 Volt470 MHz>4,4dBBLU60/2860 Watt28 Volt460 MHz>4,5dBBLU99 5 Watt12,5 Volt470 MHz>10,5dBBLV1115 Watt13,5 Volt175 MHz>8dBBLV2115 Watt28 Volt175 MHz>10dBBLV25175 Watt28 Volt108 MHz>10dBBLV30 2 Watt28 Volt860 MHz10dB25.-EU BLV32F10 Watt25 Volt224 MHz>16dBBLV3390 Watt28 Volt224 MHz7,5dB200.-EU BLV36100 Watt28 Volt225 MHz11dB100.-EU BLV5930 Watt25 Volt860 MHz>7dBBLV62150 Watt26 Volt860 MHz11dbBLV80/2880 Watt28 Volt175 MHz>6,5dBBLV92 4 Watt12,5 Volt900 MHz>7,5dBBLV938 Watt12,5 Volt900 MHz>6,5dBBLV9730 Watt24 Volt960 MHz>7dBBLV102BLV19312 Watt12,5 Volt900 MHz>6,5dBBLV861100 Watt28 Volt860 MHz>8,5dBBLV862150 Watt28 Volt860 MHz>8dBBLV862Second ChoiceBLV91010 Watt26 Volt960 MHz>11dBBLV950150 Watt26 Volt900 MHz>8dBBLV204760 Watt26 Volt2,4 GHz>9dBBLW3030 Watt12,5 Volt175 MHz>10dBBLW3128 Watt12,5 Volt175 MHz>10dBBLW320,5 Watt25 Volt860 MHz>11dB50.-EU BLW33 1 Watt25 Volt860 MHz>10dB Ask BLW33Second ChoiceBLW34 2 Watt25 Volt860 MHz10dB80.-EU BLW5050 Watt50 Volt30 MHz>19,5dBBLW7680 Watt28 Volt108 MHz7,9dBBLW77130 Watt28 Volt87,5 MHz7,5dBBLW78100 Watt28 Volt150 MHz>6dBBLW8110 Watt12,5 Volt470 MHz>6dB25 Watt12,5 Volt470 MHz6,2dBBLW82(=MRF644)BLW82F30 Watt36 Volt470 MHzBLW8645 Watt28 Volt175 MHz7,5dBBLW89 2 Watt28 Volt470 MHz>12dBBLW90 4 Watt28 Volt470 MHz>11dBBLW95160 Watt50 Volt30 MHz>14dBBLW96200 Watt50 Volt108 MHz6,5dBBLW96Second ChoiceBLW984,4 Watt25 Volt860 MHz7dB ASK BLW98Second Choice175 Watt50 Volt108 MHz7,4dBBLX15(=ON616)BLX15Second ChoiceBLY8312 Watt175 MHzBLY878 Watt13,5 Volt175 MHz>12dBBLY8815 Watt13,5 Volt175 MHz>8dBBLY8925 Watt13,5 Volt175 MHz>6dBBLY9050 Watt13,5 Volt175 MHz>5dBBLY918 Watt28 Volt175 MHz>12dBBLY9450 Watt28 Volt175 MHz>7dBMHW720-320 Watt12,5 Volt512 MHz21dBMRF151G300 Watt50 Volt175 MHz16 dB140.-EU MRF237 4 Watt12,5 Volt175 MHz12dBMRF24580 Watt12,5 Volt175 MHz6,4dBMRF24775 Watt12,5 Volt175MHz7dBMRF450A50 Watt13,6 Volt30 MHz11dBMRF45480 Watt12,5 Volt30 MHz12dBMRF45560 Watt12,5 Volt30 MHz13dBMRF47512 Watt13,6 Volt30 MHz10dBMRF47740 Watt12,5 Volt30 MHz15dBSD1460150 Watt28 Volt108 MHz9,2dB90.-EUHF-TransistorType:P.Out:Vcc:Frq:Gain:Prices: 2SC2290100 Watt14 Volt30 MHz(=MRF454)2SC231216 Watt12 Volt30 MHz12dB2SC278280 Watt12,5 Volt175 MHz6,8 dB2SC2879100 Watt12,5 Volt28 MHz13dB2N91850mA15 Volt600 MHz2N35532,5 Watt28 Volt175 MHz10 dB2N3866 1 Watt28 Volt400 MHz10dBABH71158535 Watt13,5 Volt108 MHz10dBBF964 (n-fet)30mA20 Volt200 MHzBF966 (n-fet)30mA20 Volt800 MHzBFG90a180mW15 Volt 5 GHzBFG91300mW12 Volt 6 GHzBFQ1369 Watt14 Volt 4 GHz12,5dB25.-EU BFQ342,7 Watt15 Volt 4 GHz16,3dB17.-EU BFQ684,5 Watt14 Volt 4 GHz13dBBFR943,5 Watt25 Volt3,5 GHz10dBBFW30220mW10 Volt800 MHz 3.-EU BGY22A2,9 Watt13,8 Volt380-512 MHzBGY3322 Watt12 Volt108 MHzBGY47H 3 Watt9,6 Volt400-470 MHzBGY88724 Volt40-860 MHz21,5 dBBLF147150 Watt28 Volt108 MHz14dBBLF147Second ChoiceBLF177150 Watt50 Volt108 MHz19dB70.-EU BLF177Second ChoiceBLF24415 Watt28 Volt175 MHz>13dBBLF244Second ChoiceBLF24530 Watt28 Volt175 MHz>13dB60.-EU BLF24680 Watt28 Volt108 MHz>16dBBLF246b60 Watt28 Volt175MHz>14dBBLF248300 Watt28 Volt225 MHz>10dBBLF278300 Watt50 Volt108 MHz>20dB135.-EU BLF34630 Watt28 Volt225 MHz16,5dBBLF346Second ChoiceBLF368300 Watt32 Volt225 MHz>12dBBLF368Second ChoiceBLF378250 Watt50 Volt225 MHz16dBBLF54310 Watt28 Volt500 MHz>12dBBLF543Second ChoiceBLF54420 Watt28 Volt500 MHz>11dBBLF548150 Watt28 Volt500 MHz10dBBLF548Second ChoiceBLF861150 Watt32 Volt860 MHz>13,5dBBLF861Second ChoiceBLF861a Second ChoiceBLF104770 Watt26 Volt 1 GHz>14dBBLF1047Second ChoiceBLF182065 Watt26 Volt2,4 GHz>11dBBLF1820-7065 Watt26 Volt2000 MHz>11dBBLF204530 Watt26 Volt2,4 GHz>10dBBLF2045Second ChoiceBLF204765 Watt26 Volt2200 MHz>10dBBLF2047L65 Watt26 Volt2000 MHz>10,5dBBLF205760 Watt26 Volt2,4 GHzBLU20/1220 Watt12,5 Volt470 MHz>6,5dBBLU30/1230 Watt12,5 Volt470 MHz>6dBBLU45/1245 Watt12,5 Volt470 MHz>4,8dB(=MRF646)BLU53 (dual)100 Watt28 Volt400 MHzBLU60/1260 Watt12,5 Volt470 MHz>4,4dBBLU60/2860 Watt28 Volt460 MHz>4,5dBBLU99 5 Watt12,5 Volt470 MHz>10,5dBBLV1115 Watt13,5 Volt175 MHz>8dBBLV2115 Watt28 Volt175 MHz>10dBBLV25175 Watt28 Volt108 MHz>10dBBLV30 2 Watt28 Volt860 MHz10dB25.-EU BLV32F10 Watt25 Volt224 MHz>16dBBLV3390 Watt28 Volt224 MHz7,5dB200.-EU BLV36100 Watt28 Volt225 MHz11dB100.-EU BLV5930 Watt25 Volt860 MHz>7dBBLV62150 Watt26 Volt860 MHz11dbBLV80/2880 Watt28 Volt175 MHz>6,5dBBLV92 4 Watt12,5 Volt900 MHz>7,5dBBLV938 Watt12,5 Volt900 MHz>6,5dBBLV9730 Watt24 Volt960 MHz>7dBBLV102BLV19312 Watt12,5 Volt900 MHz>6,5dBBLV861100 Watt28 Volt860 MHz>8,5dBBLV862150 Watt28 Volt860 MHz>8dBBLV862Second ChoiceBLV91010 Watt26 Volt960 MHz>11dBBLV950150 Watt26 Volt900 MHz>8dBBLV204760 Watt26 Volt2,4 GHz>9dBBLW3030 Watt12,5 Volt175 MHz>10dBBLW3128 Watt12,5 Volt175 MHz>10dBBLW320,5 Watt25 Volt860 MHz>11dB50.-EU BLW33 1 Watt25 Volt860 MHz>10dB Ask BLW33Second ChoiceBLW34 2 Watt25 Volt860 MHz10dB80.-EU BLW5050 Watt50 Volt30 MHz>19,5dBBLW7680 Watt28 Volt108 MHz7,9dBBLW77130 Watt28 Volt87,5 MHz7,5dBBLW78100 Watt28 Volt150 MHz>6dBBLW8110 Watt12,5 Volt470 MHz>6dBBLW8225 Watt12,5 Volt470 MHz6,2dB(=MRF644)BLW82F30 Watt36 Volt470 MHzBLW8645 Watt28 Volt175 MHz7,5dBBLW89 2 Watt28 Volt470 MHz>12dBBLW90 4 Watt28 Volt470 MHz>11dBBLW95160 Watt50 Volt30 MHz>14dBBLW96200 Watt50 Volt108 MHz6,5dBBLW96Second ChoiceBLW984,4 Watt25 Volt860 MHz7dB ASK BLW98Second Choice175 Watt50 Volt108 MHz7,4dBBLX15(=ON616)BLX15Second ChoiceBLY8312 Watt175 MHzBLY878 Watt13,5 Volt175 MHz>12dBBLY8815 Watt13,5 Volt175 MHz>8dBBLY8925 Watt13,5 Volt175 MHz>6dBBLY9050 Watt13,5 Volt175 MHz>5dBBLY918 Watt28 Volt175 MHz>12dBBLY9450 Watt28 Volt175 MHz>7dBMHW720-320 Watt12,5 Volt512 MHz21dBMRF151G300 Watt50 Volt175 MHz16 dB140.-EU MRF237 4 Watt12,5 Volt175 MHz12dBMRF24580 Watt12,5 Volt175 MHz6,4dBMRF24775 Watt12,5 Volt175MHz7dBMRF450A50 Watt13,6 Volt30 MHz11dBMRF45480 Watt12,5 Volt30 MHz12dBMRF45560 Watt12,5 Volt30 MHz13dBMRF47512 Watt13,6 Volt30 MHz10dBMRF47740 Watt12,5 Volt30 MHz15dBSD1460150 Watt28 Volt108 MHz9,2dB90.-EU。

BFR96中文资料

BFR96中文资料

BFR96DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used inapplications requiring fast switching times.ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C)SymbolParameterValueUnit V CEO Collector-Emitter Voltage 15Vdc V CBO Collector-Base Voltage 20Vdc V EBO Emitter-Base Voltage 3.0Vdc I CCollector Current100mAThermal DataPDTotal Device Dissipation @ TC = 100ºC Derate above 100ºC50010mWatts mW/ ºCMacro T(STYLE #2)Features• High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz • High Power Gain – Gmax = 14.5dB (typ) @ f = 0.5 GHz140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013PHONE: (215) 631-9840FAX: (215) 631-9855RF & MICROWAVE DISCRETE LOW POWER TRANSISTORSSTATIC(off)Symbol Test Conditions ValueMin.Typ.Max.Unit BVCEO Collector-Emitter Breakdown Voltage(IC = 1.0 mAdc, IB = 0)15--Vdc BVCB0Collector-Base Breakdown Voltage(IC = 0.1 mAdc, IE = 0)20--Vdc BVEBO Emitter-Base Breakdown Voltage(IE = 0.1 mAdc, IC = 0) 3.0--Vdc ICBO Collector Cutoff Current(VCB = 10 Vdc, VBE = 0 Vdc)--100nA (on)HFE DC Current Gain(IC = 50 mAdc, VCE = 10 Vdc)30-200-DYNAMICSymbol Test Conditions ValueMin.Typ.Max.Unit Ftau Current-Gain – Bandwidth Product(IC = 50 mA, VCE = 10 Vdc, f = 0.5 GHz)- 5.0-GHz CCB Output Capacitance(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)- 2.6 3.2pFBFR96 FUNCTIONALSymbol Test Conditions ValueMin.Typ.Max.UnitNF Noise Figure(IC = 10 mAdc, VCE = 10 Vdc, f = 0.5 GHz)- 2.0-dB|S21|2Insertion Gain(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)1213-dBMSG Maximum Stable Gain(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)-16.5-dBGU max Maximum Unilateral Gain (1)(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)-14.5-dB Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mAf S11S21S12S22 (MHz)|S11|∠ φ|S21|∠ φ|S12|∠ φ|S22|∠ φ1000.388-130211120.029660.416-54 2000.422-15811940.046890.277-71 3000.432-1687.5860.064720.229-79 5000.447178 4.6750.103750.224-92 7000.454170 3.4650.144740.246-100 8000.4621673610.165740.26-103 10000.479159 2.5530.212720.284-112 15000.470138 1.8320.333660.375-134BFR96RF Low Power, PA, LNA, & General Purpose Selector Guide.Low Cost Plastic Package TypesMacro T Macro X Power Macro SO-8E f f i c i e n c y (%)G P E F r e q (M H z )(M H z )F r e q (M H z )G u M a x (d B )I C m a x (m A )P a c k a g eD e v i c eI C m a x (m A )(m A )RF (Low Power PA / General Purpose) Selection GuideP o u t (w a t t s )(W a t t s )G P E (d B )(d B )G P E V C CB VC E OP a c k a g eD e v i c eT y p eN F (d B )N F I C (m A )N F V C EG N (d B )F t a u (M H z )C c b (p F )B VC E ORF (LNA / General Purpose) Selection GuideBFR96。

MRF581 放大器

MRF581 放大器

MRF581/MRF581ADESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)Symbol ParameterMRF581MRF581AUnit V CEO Collector-Emitter Voltage 1815Vdc V CBO Collector-Base Voltage 30Vdc V EBO Emitter-Base Voltage 2.5Vdc I CCollector Current200mAThermal DataP D Total Device Dissipation @ TC = 50ºC Derate above 50ºC2.525Watts mW/ ºC PDTotal Device Dissipation @ TC = 25ºC Derate above 25ºC1.2510Watts mW/ ºCTstg Storage Junction Temperature Range-65 to +150ºCT JmaxMaximum Junction Temperature150ºC Macro XFeatures• Low Noise - 2.5 dB @ 500 MHZ• High Gain,Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz• Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective MacroX PackageRF & MICROWAVE DISCRETE LOW POWER TRANSISTORS140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013PHONE: (215) 631-9840FAX: (215) 631-9855MRF581/MRF581A ELECTRICAL SPECIFICATIONS (Tcase = 25°C)STATIC(off)Symbol Test Conditions ValueMin.Typ.Max.UnitBVCEO Collector-Emitter Breakdown Voltage MRF581 (IC = 5.0 mAdc, IB = 0) MRF581A 1815--VdcBVCBO Collector-Base Breakdown Voltage(IC = 1.0 mAdc, IE = 0)30--Vdc BVEBO Emitter-Base Breakdown Voltage(IE = 0.1 mAdc, IC = 0) 2.5--Vdc ICBO Collector Cutoff Current(VCE = 15 Vdc, VBE = 0 Vdc)--0.1mA IEBO Collector Cutoff Current(VCE = 2.0 Vdc, VBE = 0 Vdc)--0.1mA (on)HFE DC Current Gain MRF581 (IC = 50 mAdc, VCE = 5.0 Vdc) MRF581A 5090-200250-DYNAMICSymbol Test Conditions ValueMin.Typ.Max.Unit COB Output Capacitance(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)- 2.0 3.0pF Ftau Current-Gain Bandwidth Product(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)- 5.0-GHzMRF581/MRF581A FUNCTIONALSymbol Test Conditions ValueMin.Typ.Max.UnitNFmin Minimum Noise Figure MRF581(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) MRF581A-2.52.03.03.0dBG NF Power Gain @ NFmin(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)1315.5dBGU max Maximum Unilateral Gain (1)IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz-17.8-dBMSG Maximum Stable GainIC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz-20-dB|S21|2Insertion GainIC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz1415-dBTable 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mAf S11S21S12S22 (MHz)|S11|∠ φ|S21|∠ φ|S12|∠ φ|S22|∠ φ100.610-13723.8116.02646.522-78 200.659-16113.298.03347.351-106 300.671-1719.089.04051.304-120 400.675-178 6.883.04755.292-128 500.677176 5.577.05558.293-132 600.678172 4.672.06461.299-134 700.677168 4.068.07362.306-135 800.679184 3.564.08263.314-136 900.678160 3.160.09264.322-138 1000.682156 2.856.10265.311-139MRF581/MRF581AC7, C10 — 10 µF, Tantalum Capacitor R1 — 1.0 kΩ Res.RFC — VK–200, Ferroxcube FB — Ferrite Bead, Ferroxcube, 56–590–65/3BTL1, TL7, TL8 — Microstrip 0.162, x 0.600,TL2 — Microstrip 0.162, x 1.000,TL3 — Microstrip 0.162, x 0.800,TL4 — Microstrip 0.162, x 0.440,TL5 — Microstrip 0.120, x 0.440,TL6 — Microstrip 0.120, x 1.160,TL9, TL10 — Microstrip 0.025, x 4.250,Board Material — 0.0625, Thick Glass Teflon ε r = 2.55Figure 1. Minimum Noise Figure and Gain @ Minimum Noise Figure.MRF581/MRF581AE f f i c i e n c y (%)F r e q (M Hz )F r eq (M H z )G u M a x (d B )I C m a x (m A )P a c k a g eD e v i c eI C m a x (m A )RF (Low Power PA / General Purpose) Selection Guide SO-8MRF4427, R2NPN 1750.1518601220400TO-392N4427NPN 175110501220400POWER MACRO MRF553NPN 175 1.511.56012.516500POWER MACROMRF553T NPN 175 1.511.55012.516500TO-39MRF607NPN 175 1.7511.55012.516330TO-392N6255NPN 17537.85012.5181000TO-722N5179NPN 2002061250P o u t (w a t t s )G P E (d B )G P E V C CB VC E OT y p eP a c k a g eD e v i c eT y p eN F (d B )N F I C (m A )N F V C E G N (d B )F t a u (M H z )C c b (p F )B V C E O RF (LNA / General Purpose) Selection GuideMacro XPower MacroMacro TSO-8RF Low Power PA, LNA, and General Purpose Discrete Selector GuideMRF581/MRF581A。

BFR91A中文资料

BFR91A中文资料


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BFR91A Marking: BFR91A Plastic case (TO 50) 1 = Collector, 2 = Emitter, 3 = Base
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 12 2 50 300 150 –65 to +150 Unit V V V mA mW °C °C
Document Number 85031 Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600 1 (8)
元器件交易网ຫໍສະໝຸດ BFR91AVishay Telefunken Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 20 V, VBE = 0 VCB = 20 V, IE = 0 VEB = 2 V, IC = 0 IC = 1 mA, IB = 0 IC = 50 mA, IB = 5 mA VCE = 5 V, IC = 30 mA Symbol Min Typ Max Unit ICES 100 mA ICBO 100 nA IEBO 10 mA V(BR)CEO 12 V VCEsat 0.1 0.4 V hFE 40 90 150