BSS88E6325中文资料

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SIPMOS ® Small-Signal Transistor• N channel• Enhancement mode• Logic Level• V GS(th) = 0.8...2.0VPin 1Pin 2Pin 3G D S Type V DS I D R DS(on)Package MarkingBSS 88240 V0.25 A8 ΩTO-92SS88Type Ordering Code Tape and Reel InformationBSS 88Q62702-S287E6288BSS 88Q62702-S303E6296BSS 88Q62702-S576E6325Maximum RatingsParameter Symbol Values Unit Drain source voltage V DS 240VDrain-gate voltage R GS = 20 kΩVDGR240Gate source voltage V GS± 20 ESD Sensitivity (HBM) as per MIL-STD 883Class 1Continuous drain current T A = 25 ˚C I D0.25ADC drain current, pulsed T A = 25 ˚C I Dpuls1Power dissipation T A = 25 ˚C P tot1WBSS 88Maximum RatingsParameter Symbol Values Unit Chip or operating temperature T j -55 ... + 150˚C Storage temperature T stg -55 ... + 150 Thermal resistance, chip to ambient air 1)R thJA≤ 125K/W DIN humidity category, DIN 40 040 EIEC climatic category, DIN IEC 68-1 55 / 150 / 56Electrical Characteristics, at T j = 25˚C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max.Static CharacteristicsDrain- source breakdown voltage V GS = 0 V, I D = 0.25 mA, T j = 25 ˚C V(BR)DSS240--VGate threshold voltage V GS=V DS, I D = 1 mA V GS(th)0.6 0.8 1.2Zero gate voltage drain currentV DS = 240 V, V GS = 0 V, T j = 25 ˚C V DS = 240 V, V GS = 0 V, T j = 125 ˚C V DS = 100 V, V GS = 0 V, T j = 25 ˚C I DSS----100.11001001µAnAGate-source leakage current V GS = 20 V, V DS = 0 V I GSS- 10 100nADrain-Source on-state resistance V GS = 4.5 V, I D = 0.25 AV GS = 1.8 V, I D = 14 mA R DS(on)--75158ΩElectrical Characteristics, at T j = 25˚C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max.Dynamic CharacteristicsTransconductanceV DS≥ 2 *I D * R DS(on)max, I D = 0.25 A g fs0.14 0.31-SInput capacitanceV GS = 0 V, V DS = 25 V, f = 1 MHz C iss- 80 110pFOutput capacitanceV GS = 0 V, V DS = 25 V, f = 1 MHz C oss- 15 25Reverse transfer capacitanceV GS = 0 V, V DS = 25 V, f = 1 MHz C rss-812Turn-on delay timeV DD = 30 V, V GS = 10 V, I D = 0.28 A R G = 50 Ωt d(on)-58nsRise timeV DD = 30 V, V GS = 10 V, I D = 0.28 A R G = 50 Ωt r- 10 15Turn-off delay timeV DD = 30 V, V GS = 10 V, I D = 0.28 A R G = 50 Ωt d(off)- 30 40Fall timeV DD = 30 V, V GS = 10 V, I D = 0.28 A R G = 50 Ωt f- 25 35Electrical Characteristics, at T j = 25˚C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max.Reverse DiodeInverse diode continuous forward current T A = 25 ˚C I S-- 0.25AInverse diode direct current,pulsed T A = 25 ˚C I SM-- 1Inverse diode forward voltage V GS = 0 V, I F = 0.5 A V SD- 0.9 1.3VPower dissipation P tot = ƒ(T A )20406080100120˚C160T A 0.0 0.1 0.2 0.3 0.4 0.5 0.60.7 0.8 0.9 1.0W 1.2 P totDrain current I D = ƒ(T A )parameter: V GS ≥ 4 V20406080100120˚C160T A0.000.02 0.04 0.06 0.08 0.10 0.120.14 0.16 0.18 0.20 0.22A 0.26 I DSafe operating area I D =f(V DS )parameter : D = 0.01, T C =25˚CDrain-source breakdown voltage V (BR)DSS = ƒ(T j )-60-202060100˚C 160T j215 220225 230 235 240 245 250 255 260 265 270275V 285 V (BR)DSSTyp. output characteristics I D = ƒ(V DS )parameter: t p = 80 µs1234567V9V DS 0.000.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50A 0.60 I DV GS [V]a a 1.5b b 2.0cc 2.5dd3.0ee 3.5f f 4.0g g 4.5hh 5.0i i 6.0j j 7.0k k8.0l P tot = 1Wl10.0Typ. drain-source on-resistance R DS (on) = ƒ(I D )parameter: t p = 80 µs, T j = 25 ˚C0.000.040.080.120.160.200.240.280.32A 0.40I D2 4 6 8 10 12 14 16 18 20 22Ω26R DS (on)V GS [V] =a a1.5b b 2.0cc 2.5d d 3.0e e 3.5f f 4.0g g 4.5h h 5.0i i 6.0j j 7.0k k8.0ll 10.0Typ. transfer characteristics I D = f (V GS )parameter: t p = 80 µs V DS ≥ 2 x I D x R DS(on)max12345678V10V GS0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.80.9 1.0 1.1A 1.3 I DTyp. forward transconductance g fs = f (I D )parameter: t p = 80 µs,V DS ≥2 x I D x R DS(on)max0.00.20.40.60.8A1.1I D0.000.05 0.10 0.150.20 0.25 0.30 0.35 0.40 0.45 S0.55 g fsDrain-source on-resistance R DS (on) = ƒ(T j )parameter: I D = 0.25 A, V GS = 4.5 V-60-202060100˚C160T j 0 2 4 6 8 10 12 14 16Ω20R DS (on)typ98%Gate threshold voltage V GS (th) = ƒ(T j )parameter: V GS = V DS, I D = 1 mA0.0 0.2 0.4 0.6 0.8 1.01.2 1.4 1.61.82.0 2.2V 2.6 V GS(th)-60-202060100˚C 160T j2%typ 98%Typ. capacitancesC = f (V DS )parameter:V GS =0V, f = 1 MHz51015202530V40V DS10 110 210 310 pFCC rssC oss C issForward characteristics of reverse diode I F = ƒ(V SD )parameter: T j , t p = 80 µs-210 -110 010 110 AI F0.00.40.8 1.2 1.6 2.0 2.4V 3.0V SDT j = 25 ˚C typ T j = 25 ˚C (98%)T j = 150 ˚C typ T j = 150 ˚C (98%)。